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Renesas M3008316045NX0IBCY
- Part No.:
- M3008316045NX0IBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
M3008316045NX0IBCY.pdf
- Description:
- IC RAM 8MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,215
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Product details
Overview
M3008316045NX0IBCY from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (–40°C to +85°C). It delivers persistent SRAM-like performance with non-volatility, enabling instant-on data retention in factory automation controllers and medical diagnostics systems.
For engineers reviewing the M3008316045NX0IBCY datasheet, M3008316045NX0IBCY pinout, M3008316045NX0IBCY application, or M3008316045NX0IBCY equivalent, this page provides verified technical context, validated pin functions, confirmed operating parameters, and real-world use-case mappings for deterministic system integration.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology to achieve true random-access reads/writes without wear-out mechanisms. Its asynchronous parallel interface supports byte- and word-level operations via independent UB#/LB# controls and standard E#/G#/W# timing protocols.
The device implements a synchronous address latch architecture with row/column decoders and sense amplifiers, enabling deterministic 35ns access across full temperature range. Power-up initialization requires coordinated VCC ramping with E#, W#, and G# signals to ensure reliable state transition before first instruction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (524,288 × 16 organization) |
| Access Time | 35 ns read/write cycle - enables direct SRAM replacement in legacy 35ns bus systems |
| Supply Voltage | 2.7 V – 3.6 V - compatible with 3.3V industrial logic rails and brownout-tolerant designs |
| Operating Temp | –40°C to +85°C - qualified for industrial control cabinets and factory-floor embedded systems |
| Data Retention | 10 years at 105°C - ensures long-term data integrity in unpowered storage applications |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead in high-frequency logging |
| Interface | Parallel asynchronous x16 - no clock, no command protocol; direct drop-in for legacy SRAM/PSRAM sockets |
Pinout & Package
Package: 48-ball FBGA (10 mm × 10 mm), ball-down configuration, RoHS/REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent undefined state |
| G# | Output Enable | Active-low control for DQ[15:0] drivers; separates read timing from chip select |
| W# | Write Enable | Active-low write strobe; determines direction of DQ bus (write when low, read when high) |
| UB# / LB# | Byte Enables | Independent upper/lower byte gating - enables 8-bit partial writes without read-modify-write |
| ADDR[18:0] | Address Inputs | 19-bit address bus for 524,288-word addressing; no internal address latching required |
| DQ[15:0] | Bidirectional Data | x16 data bus with Hi-Z control; supports simultaneous upper/lower byte access |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; no separate I/O voltage rail needed |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | 35ns read/write timing with zero write latency - eliminates backup battery and capacitor circuits |
| pMTJ STT-MRAM technology | 40nm node with 10¹⁴ endurance - removes flash wear-out management and erase-block constraints |
| Industrial temperature operation | –40°C to +85°C ambient range - supports deployment in sealed enclosures without active cooling |
| Byte-selectable write capability | UB#/LB# pins enable 8-bit granularity - reduces bus traffic and power in partial-update scenarios |
| Magnetic field immunity | 24,000 A/m tolerance during read/write - maintains reliability near motors, transformers, and solenoids |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging |
|---|---|
|
Use Scenario: Real-time I/O state logging and firmware parameter storage in programmable logic controllers with no battery backup. IC Role / Device Role / Timing Role: Non-volatile memory holding last-known machine state and calibration data; accessed on power-up within 1 ms. Use Value: Eliminates supercapacitor aging and battery replacement; retains data through 100,000+ power cycles with zero data loss. |
Use Scenario: Storing DICOM header metadata and acquisition settings in portable ultrasound and MRI subsystems. IC Role / Device Role / Timing Role: Fast-access configuration store synchronized with FPGA boot sequence; supports <10 µs parameter fetch. Use Value: Enables instant-on imaging workflow; avoids 500ms+ delays from EEPROM or NAND initialization sequences. |
| Industrial Network Routers | Smart Energy Meters |
|
Use Scenario: Holding routing table snapshots and secure boot keys in DIN-rail mounted Ethernet switches deployed in substations. IC Role / Device Role / Timing Role: High-reliability configuration memory with tamper-resistant write endurance; accessed during failover events. Use Value: Sustains 10¹⁴ write cycles - exceeds 20-year field life at 100 writes/hour; immune to EMI-induced bit flips. |
Use Scenario: Recording tariff schedules, consumption logs, and firmware update staging in ANSI C12.22-compliant electricity meters. IC Role / Device Role / Timing Role: Endurance-critical data logger storing 15-minute interval readings with atomic write commit. Use Value: Guarantees 10-year data retention at 85°C ambient - meets IEC 62056-21 lifetime requirements without refresh. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XI | 8Mbit nvSRAM with 45ns access; requires external VCAP capacitor for data retention | Capacitor dependency increases board area and introduces aging-related failure mode | Select when existing designs already use VCAP-based nvSRAM and require minimal layout change |
| Everspin MR25H80DFM | 8Mbit SPI MRAM; serial interface limits bandwidth vs. parallel x16 bus | Lower pin count but incompatible with legacy parallel SRAM footprints and timing protocols | Select for new designs prioritizing PCB space savings over raw throughput and direct SRAM drop-in |
Compared with CY14B108L-BA45XI, M3008316045NX0IBCY eliminates external capacitance and offers superior temperature resilience; compared with MR25H80DFM, it preserves full parallel bus bandwidth and timing compatibility with legacy SRAM-based controllers.
Availability
M3008316045NX0IBCY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging subsystems, industrial network routers, smart energy meters, and multifunction printers requiring stable component supply across extended product lifecycles.
Supply support for M3008316045NX0IBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3008316045NX0IBCY belongs to the M3xxx316 parallel MRAM family, designed specifically to replace battery-backed SRAM and legacy nvSRAM in high-reliability industrial systems demanding instant non-volatility and infinite endurance.
FAQ
What is the guaranteed data retention period for M3008316045NX0IBCY at 85°C?
M3008316045NX0IBCY guarantees 1,000 years of data retention at 85°C ambient temperature, per Table 16 in the official Renesas datasheet. This specification is derived from accelerated life testing and applies to the full 8Mbit array under continuous storage conditions with VCC removed. The M3008316045NX0IBCY retains data without power, making it suitable for mission-critical archival in industrial control systems.
Does M3008316045NX0IBCY require external components like capacitors or batteries for non-volatility?
No, M3008316045NX0IBCY requires no external capacitors, batteries, or backup power sources. Its pMTJ STT-MRAM technology provides intrinsic non-volatility - all data persists indefinitely after power removal. Unlike nvSRAM devices such as Cypress CY14B108L, the M3008316045NX0IBCY eliminates VCAP dependency, reducing BOM cost and improving long-term field reliability.
Can M3008316045NX0IBCY be used as a direct replacement for standard SRAM in existing designs?
M3008316045NX0IBCY supports identical parallel x16 asynchronous timing (35ns read/write), pinout-compatible address/data/control signals, and same 3.3V supply range as many industrial SRAMs. However, power-up sequencing must follow VCC ramping with E#/W#/G# - unlike SRAM, the M3008316045NX0IBCY requires strict signal coordination during initialization to avoid undefined states.
What is the maximum magnetic field strength M3008316045NX0IBCY can withstand during operation?
M3008316045NX0IBCY is rated for continuous exposure to magnetic fields up to 24,000 A/m during both read and write operations, as specified in Table 9 and Table 11 of the Renesas datasheet. This immunity allows safe deployment near motors, transformers, and solenoids in factory automation environments without data corruption or functional interruption.
Is M3008316045NX0IBCY compatible with 54-pin TSOP packages?
No, M3008316045NX0IBCY is packaged exclusively in 48-ball FBGA (10 mm × 10 mm). While the M3008316 family includes 54-pin TSOP variants (e.g., M3008316035NX0ITBY), the specific part number M3008316045NX0IBCY denotes FBGA packaging (BC suffix), industrial temperature (0I), and tray packing (Y). Its pin mapping and thermal profile differ from TSOP versions.
M3008316045NX0IBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (10x10)
M3008316045NX0IBCY FAQ
1.How can I place an order for M3008316045NX0IBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316045NX0IBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316045NX0IBCY reliable?
The price and inventory of M3008316045NX0IBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316045NX0IBCY is usually 5 days.
3.What payment methods are accepted for M3008316045NX0IBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316045NX0IBCY transactions.
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4.How is shipping managed for M3008316045NX0IBCY?
M3008316045NX0IBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316045NX0IBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316045NX0IBCY?
For technical support, including M3008316045NX0IBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316045NX0IBCY requirements.
6.How does Aetrix verify that M3008316045NX0IBCY is sourced from the original manufacturer or authorized distributors?
All M3008316045NX0IBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316045NX0IBCY meets industry standards.
7.What is the process for return or replacement of M3008316045NX0IBCY?
All M3008316045NX0IBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3008316045NX0IBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316045NX0IBCY part is unused and in its original packaging.
Return procedure for M3008316045NX0IBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316045NX0IBCY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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