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Renesas M3008316045NX0ITBR
- Part No.:
- M3008316045NX0ITBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3008316045NX0ITBR.pdf
- Description:
- IC RAM 8MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,075
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Product details
Overview
M3008316045NX0ITBR from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers persistent SRAM-like performance with non-volatility, used in real-time data logging and control systems where power loss resilience and low-latency writes are critical.
For engineers reviewing the M3008316045NX0ITBR datasheet, M3008316045NX0ITBR pinout, M3008316045NX0ITBR application, or M3008316045NX0ITBR equivalent, this page provides verified technical context, package mapping, timing behavior, byte-enable operation, and validated alternatives for factory automation, medical diagnostics, and industrial routers requiring deterministic non-volatile memory access.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its parallel asynchronous interface supports independent upper/lower byte enables (UB#/LB#), chip enable (E#), output enable (G#), and write enable (W#) for flexible bus control.
The device implements a synchronous command decode architecture with address latching on E# or W# assertion, supporting both E#-controlled and W#-controlled write modes. It guarantees 10¹⁴ write cycles and 10-year data retention at 105°C, with magnetic immunity up to 24,000 A/m during read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8 Mbit (524,288 × 16 organization) |
| Interface | Parallel asynchronous x16 with UB#/LB# byte control |
| Read/Write Cycle Time | 35 ns minimum - enables SRAM-compatible system timing without wait states |
| Supply Voltage | 2.7 V – 3.6 V - compatible with 3.3V industrial logic rails |
| Operating Temperature | −40°C to +85°C - qualified for industrial control environments |
| Data Retention | 10 years at 105°C - ensures long-term data integrity without backup power |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead |
Pinout & Package
Package: 54-pin TSOP (10 mm × 22 mm), surface-mount, industrial-grade plastic body. Pin pitch: 0.8 mm. Compatible with standard reflow profiles per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global device select; disables all I/O and internal logic when high |
| G# | Output Enable | Active-low control of DQ[15:0] drivers; sets outputs to Hi-Z when high |
| W# | Write Enable | Active-low signal determining direction: low = write, high = read |
| UB# | Upper Byte Enable | Active-low control of DQ[15:8]; allows partial-word writes to upper byte only |
| LB# | Lower Byte Enable | Active-low control of DQ[7:0]; allows partial-word writes to lower byte only |
| ADDR[18:0] | Address Inputs | 19-bit address bus for 524,288-word addressing (8Mbit × 16) |
| DQ[15:0] | Bidirectional Data I/O | 16-bit parallel data path; direction controlled by W# state |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; no separate I/O voltage required |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | SRAM-compatible 35ns read/write timing with inherent non-volatility - eliminates external backup battery or capacitor |
| Byte-selectable write capability | Independent UB# and LB# pins enable 8-bit partial-word writes - reduces bus contention and power spikes |
| 40nm pMTJ STT-MRAM technology | Enables 10¹⁴ endurance and 10-year data retention at 105°C - suitable for unattended industrial deployments |
| Magnetic field immunity | Withstands 24,000 A/m fields during read/write - robust in motor-driven or high-current industrial enclosures |
| Industrial temperature qualification | Validated across −40°C to +85°C with full AC/DC specs - supports wide-temperature PLC and HMI designs |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing position history and fault logs during continuous CNC operation. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding last-known state and error codes with sub-40ns write latency. Use Value: Survives unexpected power loss without data corruption; eliminates need for supercapacitor-based backup circuitry. | Use Scenario: Portable ultrasound machine capturing frame buffers and calibration parameters between imaging sessions. IC Role / Device Role / Timing Role: High-reliability storage for time-critical waveform metadata and user settings with zero write latency penalty. Use Value: Guarantees 10¹⁴ write cycles - exceeds lifetime usage in diagnostic equipment with frequent parameter updates. |
| Industrial Routers | Smart Metering |
Use Scenario: Edge router maintaining routing tables and session state during brownout events in remote substations. IC Role / Device Role / Timing Role: Fast-access configuration store updated dynamically via SNMP or CLI commands. Use Value: 35ns write cycle enables real-time table updates without interrupting packet forwarding paths. | Use Scenario: Electricity meter recording consumption snapshots every 15 minutes under varying grid conditions. IC Role / Device Role / Timing Role: Tamper-resistant event log with guaranteed retention over 10+ years at elevated ambient temperatures. Use Value: Meets IEC 62056-21 data integrity requirements without EEPROM wear leveling or refresh routines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XI | 8Mbit nvSRAM with 45ns access; requires external VCAP for data retention; separate VDD/VDDQ rails | Needs external capacitor and bias circuitry; higher BOM cost and board area | Select if legacy nvSRAM footprint compatibility is mandatory and capacitor integration is acceptable |
| Infineon Q8028A16-35N | 8Mbit parallel MRAM; same 35ns timing but 48-ball FBGA only; no TSOP option | Lacks 54-pin TSOP package - incompatible with existing TSOP-based PCB layouts | Select only for new FBGA-based designs prioritizing smaller footprint over TSOP drop-in replacement |
Compared with M3008316045NX0ITBR, CY14B108L-BA45XI adds capacitor dependency and layout complexity, while Q8028A16-35N sacrifices TSOP compatibility for density scaling - making M3008316045NX0ITBR the optimal choice for industrial TSOP-replacement upgrades requiring zero hardware changes.
Availability
M3008316045NX0ITBR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial routing applications requiring stable component supply, long-lifecycle support, and guaranteed non-volatile memory performance across extended temperature ranges.
Supply support for M3008316045NX0ITBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems where data persistence, speed, and reliability cannot be compromised.
FAQ
What is the exact memory organization of M3008316045NX0ITBR?
M3008316045NX0ITBR has an 8Mbit capacity organized as 524,288 words × 16 bits. This corresponds to 19 address lines (ADDR[18:0]) and a full 16-bit bidirectional data bus (DQ[15:0]). The device supports byte-selectable access via UB# and LB# signals, enabling efficient 8-bit writes without disturbing adjacent data.
Does M3008316045NX0ITBR require an external capacitor for non-volatility?
No, M3008316045NX0ITBR does not require any external capacitor or backup power source. Its STT-MRAM technology provides intrinsic non-volatility - data persists automatically after power removal. Unlike nvSRAMs such as Cypress CY14B108L, M3008316045NX0ITBR retains all stored content indefinitely without auxiliary components.
Is M3008316045NX0ITBR pin-compatible with standard 54-pin TSOP SRAMs?
M3008316045NX0ITBR uses a 54-pin TSOP package with identical mechanical dimensions (10 mm × 22 mm) and pin pitch (0.8 mm) as JEDEC-standard 54-pin x16 SRAMs. Signal mapping (E#, G#, W#, UB#, LB#, ADDR, DQ) aligns directly, enabling drop-in replacement in most SRAM-based designs - provided timing margins and voltage compliance are verified.
What is the maximum magnetic field strength M3008316045NX0ITBR can withstand during operation?
M3008316045NX0ITBR is rated for magnetic field immunity up to 24,000 A/m during both read and write operations. This level exceeds typical industrial electromagnetic interference from motors, solenoids, and transformers, ensuring reliable operation in factory automation and power distribution equipment without shielding.
How does the write endurance of M3008316045NX0ITBR compare to Flash or EEPROM?
M3008316045NX0ITBR guarantees 10¹⁴ write cycles - 100 million times greater than typical NAND Flash (10⁵ cycles) and 10,000 times greater than EEPROM (10¹⁰ cycles). This eliminates wear-leveling algorithms and write-cycle management firmware, simplifying system design for high-frequency logging applications.
M3008316045NX0ITBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3008316045NX0ITBR FAQ
1.How can I place an order for M3008316045NX0ITBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316045NX0ITBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316045NX0ITBR reliable?
The price and inventory of M3008316045NX0ITBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316045NX0ITBR is usually 5 days.
3.What payment methods are accepted for M3008316045NX0ITBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316045NX0ITBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316045NX0ITBR?
M3008316045NX0ITBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316045NX0ITBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316045NX0ITBR?
For technical support, including M3008316045NX0ITBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316045NX0ITBR requirements.
6.How does Aetrix verify that M3008316045NX0ITBR is sourced from the original manufacturer or authorized distributors?
All M3008316045NX0ITBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316045NX0ITBR meets industry standards.
7.What is the process for return or replacement of M3008316045NX0ITBR?
All M3008316045NX0ITBR units undergo pre-shipment inspection (PSI). If there is an issue with M3008316045NX0ITBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316045NX0ITBR part is unused and in its original packaging.
Return procedure for M3008316045NX0ITBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316045NX0ITBR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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