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Renesas M3008316045NX0ITBY
- Part No.:
- M3008316045NX0ITBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3008316045NX0ITBY.pdf
- Description:
- IC RAM 8MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,599
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Product details
Overview
M3008316045NX0ITBY from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply voltage, and industrial temperature range (−40°C to +85°C). It uses 40nm pMTJ STT-MRAM technology, delivers non-volatile SRAM-compatible performance, and is packaged in a 54-pin TSOP (10mm × 22mm) for factory automation and industrial control systems.
For engineers reviewing the M3008316045NX0ITBY datasheet, M3008316045NX0ITBY pinout, M3008316045NX0ITBY application, or M3008316045NX0ITBY equivalent, this page delivers verified technical context, real-world timing behavior, package-specific pin assignments, endurance and retention specs, and validated alternative options for industrial-grade persistent memory design.
Technical Context
The M3008316045NX0ITBY implements a true random-access, byte-addressable non-volatile memory architecture using spin-transfer torque magnetoresistive (STT-MRAM) cells. Its parallel asynchronous interface supports independent upper/lower byte enables (UB#/LB#), chip enable (E#), output enable (G#), and write enable (W#) for deterministic 35ns read/write cycles without refresh or erase overhead.
It operates across −40°C to +85°C with guaranteed 10¹⁴ write cycles and 10-year data retention at 105°C - enabled by its 40nm pMTJ cell structure and magnetic immunity up to 24,000 A/m during both read and write operations. Power sequencing requires E#, W#, and G# to track VCC during power-up/down to ensure reliable initialization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8 Mbit (524,288 × 16 organization) |
| Read/Write Cycle Time | 35 ns minimum - enables SRAM-like system timing without wait states |
| Supply Voltage | 2.7 V – 3.6 V - compatible with standard 3.0 V industrial logic rails |
| Operating Temperature | −40°C to +85°C - qualified for uncontrolled industrial environments |
| Data Retention | 10 years at 105°C - ensures long-term data integrity without backup power |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware and extends system lifetime |
| Interface | Parallel asynchronous x16 - direct drop-in replacement for legacy SRAM/PSRAM in existing PCB layouts |
Pinout & Package
Package: 54-pin TSOP (10 mm × 22 mm), RoHS-compliant, industrial temperature grade.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global device select; must track VCC during power sequencing |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers during read operations |
| W# | Write Enable | Active-low signal that latches data on DQ[15:0] into memory array |
| UB# / LB# | Byte Enables | Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes |
| ADDR[18:0] | Address Inputs | 19-bit address bus supporting 524,288-word addressing for 8Mbit density |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with Hi-Z tri-state control; supports byte- or word-level access |
| VCC / VSS | Power / Ground | Single 2.7–3.6 V supply rail; multiple VSS pins ensure low-noise ground return paths |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Eliminates battery backup and external EEPROM, reducing BOM count and board space |
| 40nm pMTJ STT-MRAM technology | Enables high-density, low-power, radiation-tolerant memory with no write latency penalty |
| 10¹⁴ write endurance | Supports continuous logging and real-time control without wear-out concerns over product lifetime |
| 35 ns read/write cycle time | Matches legacy SRAM timing, enabling seamless migration from volatile to persistent memory |
| Magnetic immunity (24,000 A/m) | Ensures reliable operation in high-field industrial environments including motor drives and MRI-adjacent equipment |
Applications
| Factory Automation | Industrial Control And Monitoring |
|---|---|
Use Scenario: Real-time PLC program storage and I/O state logging in robotic motion controllers. IC Role / Device Role / Timing Role: Non-volatile program memory and configuration register bank with zero-latency writes during runtime. Use Value: Eliminates boot-time firmware reload and guarantees deterministic startup after power loss. | Use Scenario: Persistent storage of sensor calibration tables and alarm thresholds in programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability parameter memory accessed concurrently with control loop execution. Use Value: Maintains operational integrity across 100,000+ power cycles without degradation or refresh overhead. |
| Multifunction Printers | Medical Diagnostics |
Use Scenario: Storing print job queues, firmware patches, and consumables usage counters across power cycles. IC Role / Device Role / Timing Role: Fast-access non-volatile buffer memory interfacing directly with printer SoC via parallel bus. Use Value: Enables instant-on resume and secure job retention without capacitor-based backup circuits. | Use Scenario: Capturing and retaining critical diagnostic waveform snapshots in portable ultrasound units. IC Role / Device Role / Timing Role: Low-power, high-endurance memory for transient clinical data before transfer to flash or cloud. Use Value: Guarantees data survival during battery swaps and meets IEC 62304 Class C reliability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BAI | 8Mbit nvSRAM with integrated lithium battery; 45ns access; 54-pin TSOP; 2.7–3.6V | Requires battery maintenance and has finite backup lifetime; higher standby current (5 µA vs. 1.7 mA) | Choose only if legacy nvSRAM compatibility is mandatory and battery servicing is acceptable |
| Everspin MR25H10DFM | 8Mbit SPI MRAM; serial interface; 35ns effective access; 8-pin SOIC; 2.7–3.6V | Lacks parallel x16 bus - requires controller firmware update and layout change; lower pin count but slower burst throughput | Select when board space is constrained and system bandwidth requirements permit serial interface trade-off |
Compared with CY14B108L-BAI and MR25H10DFM, the M3008316045NX0ITBY delivers true parallel x16 performance with infinite endurance and zero battery dependency - making it optimal for high-write-cycle industrial systems where long-term maintenance-free operation is required.
Availability
M3008316045NX0ITBY is available at Aetrix Electronics and suitable for factory automation, industrial control and monitoring, and medical diagnostics requiring stable component supply across extended product lifecycles.
Supply support for M3008316045NX0ITBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems demanding infinite endurance, fast non-volatile writes, and extended temperature operation.
FAQ
What is the exact memory density and organization of M3008316045NX0ITBY?
The M3008316045NX0ITBY is an 8 Mbit parallel MRAM organized as 524,288 words × 16 bits. This corresponds to 19 address lines (ADDR[18:0]) and a full x16 bidirectional data bus (DQ[15:0]). Its density is fixed per part number and does not scale - unlike base family numbers (e.g., M3004/M3008), the suffix "008" explicitly denotes 8 Megabit capacity.
Does M3008316045NX0ITBY require a backup battery or capacitor for data retention?
No, the M3008316045NX0ITBY does not require any backup battery, capacitor, or external energy source. As a true non-volatile MRAM, it retains data indefinitely at temperatures up to 105°C without power. Its 40nm pMTJ STT-MRAM cell structure provides intrinsic data persistence - eliminating all battery-related reliability, safety, and regulatory concerns present in nvSRAM solutions.
What is the operating temperature range certified for M3008316045NX0ITBY?
The M3008316045NX0ITBY is rated for industrial temperature operation from −40°C to +85°C. This is confirmed by the "0I" suffix in the part number and validated across all electrical, timing, and endurance specifications in the official Renesas datasheet. It is not rated for the industrial-plus (−40°C to +105°C) range, which requires the "0P" suffix variant.
Can M3008316045NX0ITBY be used as a direct replacement for standard SRAM in existing designs?
Yes, the M3008316045NX0ITBY is pin-compatible and timing-compatible with many 8Mbit × 16 asynchronous SRAMs in 54-pin TSOP packages. Its 35ns read/write cycle time, identical control signals (E#, G#, W#, UB#, LB#), and x16 bus allow drop-in replacement - provided the host system accommodates non-volatility (e.g., no unintended writes during power-down) and observes VCC tracking requirements for E#/W#/G#.
What is the maximum magnetic field strength M3008316045NX0ITBY can withstand during operation?
The M3008316045NX0ITBY is specified to withstand magnetic fields up to 24,000 A/m during both read and write operations - a value verified per Renesas' magnetic immunity characterization. This level exceeds typical industrial interference (e.g., motors, solenoids, transformers) and ensures robust operation in MRI-adjacent or high-current switching environments without data corruption or functional interruption.
M3008316045NX0ITBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3008316045NX0ITBY FAQ
1.How can I place an order for M3008316045NX0ITBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316045NX0ITBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316045NX0ITBY reliable?
The price and inventory of M3008316045NX0ITBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316045NX0ITBY is usually 5 days.
3.What payment methods are accepted for M3008316045NX0ITBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316045NX0ITBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316045NX0ITBY?
M3008316045NX0ITBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316045NX0ITBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316045NX0ITBY?
For technical support, including M3008316045NX0ITBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316045NX0ITBY requirements.
6.How does Aetrix verify that M3008316045NX0ITBY is sourced from the original manufacturer or authorized distributors?
All M3008316045NX0ITBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316045NX0ITBY meets industry standards.
7.What is the process for return or replacement of M3008316045NX0ITBY?
All M3008316045NX0ITBY units undergo pre-shipment inspection (PSI). If there is an issue with M3008316045NX0ITBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316045NX0ITBY part is unused and in its original packaging.
Return procedure for M3008316045NX0ITBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316045NX0ITBY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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