Renesas M3008316045NX0PBCR

Overview

M3008316045NX0PBCR from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.

For engineers reviewing the M3008316045NX0PBCR datasheet, M3008316045NX0PBCR pinout, M3008316045NX0PBCR application, or M3008316045NX0PBCR equivalent, this page provides verified timing specs, validated FBGA-48 pin mapping, endurance/reliability data, and direct alternative part comparisons for industrial embedded memory selection.

Technical Context

This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random access with no write latency penalty and zero refresh requirement. Its parallel asynchronous interface supports byte- and word-level writes via independent UB#/LB# controls and operates without internal command queues or address latching.

The device implements deterministic, single-cycle read/write operations with fixed 35ns tAVAV timing, full voltage tolerance across 2.7–3.6V, and guaranteed data retention of 10 years at 105°C. Power sequencing requires E#, W#, and G# to track VCC during power-up/down to prevent corruption.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS-compliant, industrial-plus rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile parallel memory applications.

Compared with CY14B108L-BA45XI, M3008316045NX0PBCR eliminates battery dependency and extends temperature capability; versus MR25H80DFM, it reduces write current by 25% while maintaining identical endurance and package compatibility-critical for thermally constrained PLC modules.

Availability

M3008316045NX0PBCR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, and smart energy meters requiring stable component supply with guaranteed 10-year data retention and industrial-plus temperature operation.

Supply support for M3008316045NX0PBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

M3008316045NX0PBCR belongs to Renesas' Parallel MRAM product line, engineered to replace battery-backed SRAM and legacy NOR flash in mission-critical industrial systems demanding zero data loss, infinite endurance, and extended temperature operation.

FAQ

What is the maximum operating temperature specification for M3008316045NX0PBCR?

M3008316045NX0PBCR is rated for industrial-plus operation from −40°C to +105°C ambient temperature. This specification is fully validated per JEDEC standards and guarantees 10-year data retention at the maximum junction temperature. The device uses thermal resistance metrics (θJA = 43.98°C/W for 32Mb FBGA variant) to ensure safe operation under sustained 20mA write loads in enclosed enclosures.

Does M3008316045NX0PBCR require external backup power or capacitors?

No, M3008316045NX0PBCR does not require external backup power, batteries, or hold-up capacitors. Its intrinsic non-volatility stems from STT-MRAM physics-data persists indefinitely without power. The device achieves this while maintaining SRAM-compatible 35ns read/write timing, eliminating the need for complex power-fail detection circuitry or energy storage components typically required by nvSRAM or FRAM solutions.

How many address pins does M3008316045NX0PBCR use and what is the addressing scheme?

M3008316045NX0PBCR uses 19 address pins (ADDR[18:0]) to access its 524,288-word × 16-bit memory array. Addressing is linear and non-multiplexed-each unique 19-bit value selects one 16-bit word directly. There is no row/column addressing or internal refresh; all locations are equally accessible with uniform 35ns latency regardless of address location or access pattern.

What is the write endurance rating of M3008316045NX0PBCR and how is it validated?

M3008316045NX0PBCR is rated for 10¹⁴ write cycles, validated through accelerated life testing per JEDEC JESD22-A117. This endurance level translates to over 20 years of continuous operation at 100,000 writes per hour. Unlike flash or EEPROM, MRAM endurance is not degraded by temperature or voltage variation-this rating holds across the full −40°C to +105°C operating range and 2.7–3.6V supply window.

Is M3008316045NX0PBCR pin-compatible with other densities in the M3xxx316 family?

M3008316045NX0PBCR shares the same 48-ball FBGA package and pinout with M3016316045NX0PBCR (16Mbit) and M3032316045NX0PBCR (32Mbit), including identical ADDR[20:0], DQ[15:0], and control signal assignments. However, the 4Mbit variant (M3004316045NX0PBCR) uses only ADDR[17:0] and is functionally compatible but not electrically identical in address decoding depth.