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Renesas M3008316045NX0PTBR
- Part No.:
- M3008316045NX0PTBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3008316045NX0PTBR.pdf
- Description:
- IC RAM 8MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,674
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Product details
Overview
M3008316045NX0PTBR from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling fast, reliable data logging in real-time control systems.
For engineers reviewing the M3008316045NX0PTBR datasheet, M3008316045NX0PTBR pinout, M3008316045NX0PTBR application, or M3008316045NX0PTBR equivalent, this page provides verified technical context, package mapping, timing behavior, byte-select operation, and validated alternative options for industrial memory replacement scenarios.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, supporting true random-access reads and writes without erase cycles. Its parallel asynchronous interface operates with independent chip enable (E#), output enable (G#), and write enable (W#) controls, plus upper/lower byte enables (UB#/LB#) for x16 data bus granularity.
The device implements deterministic 35ns read/write timing under industrial-plus conditions, with guaranteed 10¹⁴ write endurance and 10-year data retention at 105°C. Power sequencing requires E#, W#, and G# to track VCC during power-up/down, and write inhibition activates below 2.1V (Vwi).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8Mbit (524,288 × 16 organization) |
| Interface Type | Parallel asynchronous x16 with E#, G#, W#, UB#, LB# control signals |
| Read/Write Cycle Time | 35ns minimum - enables SRAM-compatible system integration without wait states |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and brownout tolerance |
| Operating Temperature | −40°C to +105°C - qualified for extended industrial environments including factory automation and medical diagnostics |
| Data Retention | 10 years at 105°C - ensures long-term data integrity without backup power or refresh |
| Write Endurance | 10¹⁴ cycles - eliminates wear-leveling firmware overhead and supports high-frequency logging |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-plus rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing |
| G# | Output Enable | Active-low control of DQ[15:0] drivers; determines read vs. high-impedance state |
| W# | Write Enable | Active-low signal selecting write mode; high during read operations |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8]; enables partial-word writes without disturbing lower byte |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0]; enables partial-word writes without disturbing upper byte |
| ADDR[18:0] | Address Inputs | 19-bit address bus for 524,288-word addressing; no address latching required |
| DQ[15:0] | Bidirectional Data I/O | x16 parallel data path; supports simultaneous upper/lower byte access or full-word transfer |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; no separate I/O or core voltage rails |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | 35ns read/write timing with no write latency penalty or erase requirement - replaces battery-backed SRAM without redesign |
| Byte-select write capability | Independent UB#/LB# control allows 8-bit partial writes - reduces bus contention and power spikes in real-time systems |
| Extended temperature operation | −40°C to +105°C qualification - supports deployment in sealed enclosures, motor drives, and medical imaging equipment |
| Ultra-high endurance | 10¹⁴ write cycles - eliminates lifetime concerns in data-acquisition buffers, event logs, and configuration storage |
| Magnetic field immunity | 24,000 A/m tolerance during read/write - maintains reliability near motors, transformers, and MRI equipment |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging |
|---|---|
|
Use Scenario: Real-time logging of sensor inputs, motion profiles, and safety-critical status flags in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing immediate write persistence without interrupt latency or backup capacitors. Use Value: Eliminates data loss during unexpected power loss and removes need for external NVSRAM or FRAM with slower write cycles. |
Use Scenario: Storing calibration coefficients, image metadata, and DICOM header information in ultrasound and X-ray systems. IC Role / Device Role / Timing Role: High-reliability configuration store interfaced directly to ARM-based imaging processors via parallel bus. Use Value: Guarantees 10-year data retention at 105°C ambient - critical for devices operating inside thermally constrained medical chassis. |
| Industrial Network Routers | Smart Energy Meters |
|
Use Scenario: Buffering packet headers and routing table updates in DIN-rail mounted Ethernet switches deployed in substations. IC Role / Device Role / Timing Role: Low-latency, high-endurance memory for volatile control structures that must survive grid transients and EMI events. Use Value: Withstands 24,000 A/m magnetic fields - immune to interference from nearby current transformers and switching power supplies. |
Use Scenario: Secure storage of tariff schedules, tamper logs, and cryptographic keys in ANSI C12.22-compliant electricity meters. IC Role / Device Role / Timing Role: Trusted non-volatile memory with write endurance exceeding 20-year meter lifetime requirements. Use Value: 10¹⁴ write cycles exceeds ANSI C12.19 lifetime spec by >1000× - eliminates field failures due to EEPROM wear-out. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XIT | 8Mbit nvSRAM with 45ns access; requires external capacitor for write-back on power loss | Limited to 85°C operation; lacks magnetic immunity specification | Select when legacy nvSRAM footprint compatibility is mandatory and thermal margin >20°C exists |
| Everspin MR25H10DFM | 1Mbit SPI MRAM; serial interface only, no parallel x16 bus support | Requires MCU firmware rewrite; unsuitable for direct SRAM replacement | Select only for space-constrained designs where serial interface suffices and density ≤1Mbit is acceptable |
Compared with CY14B108L-BA45XIT and MR25H10DFM, the M3008316045NX0PTBR uniquely combines 8Mbit parallel x16 interface, 105°C rating, and 24,000 A/m magnetic immunity - making it the sole drop-in replacement for industrial SRAMs requiring zero-power data persistence without external components.
Availability
M3008316045NX0PTBR is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, industrial network routers, smart energy meters, and aerospace data recorders requiring stable component supply across extended temperature and magnetic environments.
Supply support for M3008316045NX0PTBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems where data persistence, speed, and environmental robustness are non-negotiable.
FAQ
What is the maximum operating temperature for M3008316045NX0PTBR?
The M3008316045NX0PTBR is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC standards and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. Operation beyond 105°C risks violating absolute maximum ratings and may compromise data retention guarantees.
Does M3008316045NX0PTBR require external backup power or capacitors?
No, the M3008316045NX0PTBR is inherently non-volatile and requires no external backup power, supercapacitors, or batteries. Its STT-MRAM technology retains data indefinitely after power removal, unlike nvSRAM which depends on external energy storage for write-back functionality.
Is M3008316045NX0PTBR pin-compatible with standard SRAMs?
M3008316045NX0PTBR uses a 54-pin TSOP package with pin assignments optimized for MRAM operation (e.g., dedicated UB#/LB# pins), not generic SRAM footprints. While electrical signaling matches standard parallel SRAM protocols, PCB layout must follow Renesas' recommended pad layout in Package Drawing #9 - direct drop-in replacement is not guaranteed without verification.
What is the write endurance specification for M3008316045NX0PTBR?
The M3008316045NX0PTBR guarantees ≥10¹⁴ write cycles per memory location, as specified in Table 16 of the Renesas datasheet. This exceeds typical EEPROM (10⁵–10⁶) and Flash (10⁴–10⁵) endurance by orders of magnitude, enabling continuous logging without wear leveling.
How does M3008316045NX0PTBR handle power sequencing during startup?
The M3008316045NX0PTBR requires E#, W#, and G# to ramp with VCC during power-up, as defined in Figure 4 and Section 15 of the datasheet. Failure to synchronize control signals with VCC may result in undefined behavior or initialization failure - Renesas specifies tPU ≥1ms from VCC reaching 2.7V before first instruction.
M3008316045NX0PTBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3008316045NX0PTBR FAQ
1.How can I place an order for M3008316045NX0PTBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3008316045NX0PTBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3008316045NX0PTBR reliable?
The price and inventory of M3008316045NX0PTBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3008316045NX0PTBR is usually 5 days.
3.What payment methods are accepted for M3008316045NX0PTBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3008316045NX0PTBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3008316045NX0PTBR?
M3008316045NX0PTBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3008316045NX0PTBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3008316045NX0PTBR?
For technical support, including M3008316045NX0PTBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3008316045NX0PTBR requirements.
6.How does Aetrix verify that M3008316045NX0PTBR is sourced from the original manufacturer or authorized distributors?
All M3008316045NX0PTBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3008316045NX0PTBR meets industry standards.
7.What is the process for return or replacement of M3008316045NX0PTBR?
All M3008316045NX0PTBR units undergo pre-shipment inspection (PSI). If there is an issue with M3008316045NX0PTBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3008316045NX0PTBR part is unused and in its original packaging.
Return procedure for M3008316045NX0PTBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3008316045NX0PTBR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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