Renesas M3008316045NX0PTBY

Overview

M3008316045NX0PTBY from Renesas Electronics is an 8Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatility, enabling instant-on data retention in factory automation controllers and medical diagnostics systems.

For engineers reviewing the M3008316045NX0PTBY datasheet, M3008316045NX0PTBY pinout, M3008316045NX0PTBY application, or M3008316045NX0PTBY equivalent, this page provides verified timing parameters, validated TSOP-54 pin mapping, confirmed endurance (10¹⁴ cycles), real-world use cases in industrial control and smart metering, and two functionally comparable MRAM alternatives with documented differences.

Technical Context

The M3008316045NX0PTBY implements STT-MRAM technology using a 40nm pMTJ cell structure, supporting true random-access reads and writes without erase cycles. Its parallel x16 interface uses standard asynchronous control signals (E#, G#, W#, UB#, LB#) and 19-bit addressing (ADDR[18:0]) for 524,288 × 16 organization.

Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥1ms and Vwi write-inhibit threshold at 2.1–2.5V. Magnetic immunity is rated to 24,000 A/m during both read and write operations, ensuring robustness in high-noise industrial environments.

Key Specifications

Pinout & Package

Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-plus rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar MRAM applications.

Compared with MR2A16A, M3008316045NX0PTBY offers double density and extended temperature support; compared with SEMPRE S27KS0641DPBHI020, it provides deterministic 35ns parallel access without command overhead - critical for real-time control loops.

Availability

M3008316045NX0PTBY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering requiring stable component supply across extended temperature ranges and multi-year production lifecycles.

Supply support for M3008316045NX0PTBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The M3008316045NX0PTBY belongs to Renesas' Parallel MRAM product line, engineered to replace battery-backed SRAM and legacy Flash in high-reliability industrial systems demanding instant-write non-volatility and extended temperature operation.

FAQ

What is the memory organization of the M3008316045NX0PTBY?

The M3008316045NX0PTBY features an 8Mbit memory array organized as 524,288 words × 16 bits, addressed via 19-bit ADDR[18:0]. This x16 parallel configuration supports byte-selectable access using UB# and LB# signals, enabling efficient partial-word writes without read-modify-write overhead. The device uses a 40nm pMTJ STT-MRAM cell structure to achieve this density with non-volatility.

Does the M3008316045NX0PTBY require a backup power source or capacitor for data retention?

No, the M3008316045NX0PTBY does not require any backup power source, supercapacitor, or external energy storage. As a true non-volatile MRAM, it retains data indefinitely at temperatures up to 105°C without power - verified for 10 years at that temperature. This eliminates BOM cost and design complexity associated with battery-backed SRAM or Flash-based solutions.

What are the power sequencing requirements for reliable operation of the M3008316045NX0PTBY?

The M3008316045NX0PTBY requires E#, W#, and G# to track VCC during both power-up and power-down transitions. The minimum power-up time (tPU) is 1ms after VCC reaches its minimum operating voltage (2.7V). During brownout conditions where VCC falls below the write-inhibit threshold (Vwi = 2.1–2.5V), all read/write operations are automatically inhibited to prevent corruption - no external sequencer is needed if these timing and voltage thresholds are respected.

How does the M3008316045NX0PTBY compare to Flash or EEPROM in terms of write endurance and latency?

The M3008316045NX0PTBY provides 10¹⁴ write cycles - orders of magnitude higher than typical Flash (10⁵) or EEPROM (10⁶) - and executes writes in 35ns with no erase latency. Unlike Flash, it supports true random writes without block erasure, eliminating firmware wear-leveling and garbage collection. This makes M3008316045NX0PTBY ideal for high-frequency logging applications where Flash would degrade rapidly.

Is the M3008316045NX0PTBY pin-compatible with standard SRAM or PSRAM devices?

The M3008316045NX0PTBY uses a 54-pin TSOP package with industry-standard x16 parallel asynchronous interface signals (E#, G#, W#, UB#, LB#, ADDR[18:0], DQ[15:0]), matching footprint and pinout of many 8Mbit SRAM and PSRAM devices. However, designers must verify timing compatibility (especially tWHAX, tWLQZ) and ensure power sequencing compliance - while electrical interface is compatible, the MRAM's non-volatility and magnetic immunity introduce distinct system-level considerations not present in volatile memories.