Renesas M30162040054X0ISAR

Overview

M30162040054X0ISAR from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with Quad SPI (4-4-4) interface, 54MHz DDR clock support, 1.71–2.0V or 2.7–3.6V dual supply range, and industrial temperature rating (−40°C to +85°C) in 8-pin SOIC package. It delivers SRAM-compatible read/write timing with persistent data retention, targeting real-time data logging in factory automation controllers.

For engineers reviewing the M30162040054X0ISAR datasheet, M30162040054X0ISAR pinout, M30162040054X0ISAR application, or M30162040054X0ISAR equivalent, this page provides verified specifications, validated pin functions, confirmed industrial use cases, and two technically documented alternative MRAM parts for design continuity.

Technical Context

The M30162040054X0ISAR implements pMTJ-based spin-transfer torque MRAM technology on a 40nm process, enabling true random-access reads/writes with no write endurance limit and >20-year data retention at 85°C. Its architecture supports Execute-In-Place (XIP) mode to eliminate per-access command overhead during burst sequences.

It operates in Quad SPI (4-4-4) mode with double-data-rate clocking-latching address and data on both rising and falling edges of CLK-and includes hardware write protection via WP# pin plus software-configurable block protection through status and configuration registers. The device integrates a 256-byte augmented storage array with per-section write protection.

Key Specifications

Pinout & Package

8-pin SOIC (5.2 mm × 5.2 mm) package with standard JEDEC MS-012AC outline and lead finish compliant with RoHS/REACH.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial MRAM applications.

Compared with M30162040054X0ISAR, MR25H10MDF trades density and voltage flexibility for marginally higher base speed, while M30162040108X0ISAR offers direct pin-compatible speed scaling - both require validation of timing closure and power delivery stability at target clock rates.

Availability

M30162040054X0ISAR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging buffers, and industrial Ethernet switch configurations requiring stable component supply across extended product lifecycles.

Supply support for M30162040054X0ISAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30162040054X0ISAR belongs to Renesas' Persistent SRAM (P-SRAM) MRAM family, designed specifically to replace battery-backed SRAM and serial Flash in mission-critical industrial systems demanding zero write latency and guaranteed data retention.

FAQ

What is the maximum clock frequency supported by M30162040054X0ISAR in Double Data Rate mode?

The M30162040054X0ISAR supports up to 54 MHz in Double Data Rate (DDR) mode for Quad SPI (4-4-4) operation. This yields an effective data rate of 432 Mbps, as both rising and falling edges of the clock are used to sample address and data. The part also supports Single Data Rate (SDR) mode at 108 MHz, but the '0054' suffix in M30162040054X0ISAR explicitly denotes the 54 MHz DDR-optimized variant.

Does M30162040054X0ISAR require an external voltage regulator or level shifter for 1.8V operation?

No, M30162040054X0ISAR operates natively across two voltage ranges: 1.71–2.00 V and 2.70–3.60 V. When powered at 1.8 V, it internally regulates core logic and I/O circuits without external components. No level shifter is needed for interfacing with 1.8 V microcontrollers, as all pins are fully compliant with 1.8 V logic thresholds and drive strengths per the datasheet's DC characteristics table.

How is data protection implemented on M30162040054X0ISAR beyond the WP# pin?

In addition to hardware write protection via the WP# pin, M30162040054X0ISAR implements software-based protection using configuration bits in the Status Register (SR[5:2]) and Configuration Registers. These enable top/bottom memory array selection and 8-level block protection granularity (BPSEL[2:0]), plus serial number and augmented storage array locking. All protections persist across power cycles and are retained in non-volatile registers.

Can M30162040054X0ISAR be used as a direct replacement for standard SPI NOR Flash in existing designs?

M30162040054X0ISAR is pin-compatible with many 8-pin SOIC SPI NOR Flash devices and shares identical command sets for basic read/write operations. However, it does not require sector erase commands or support legacy Flash-specific instructions like Chip Erase or Sector Lock. Firmware must be updated to remove erase routines and leverage MRAM's instant-write capability - no hardware changes are needed, but software adaptation is mandatory.

What is the purpose and size of the Augmented Storage Array in M30162040054X0ISAR?

The Augmented Storage Array in M30162040054X0ISAR is a dedicated 256-byte non-volatile memory region separate from the main 16 Mbit array. It is divided into eight 32-byte sections, each independently programmable and write-protectable. This area is intended for storing critical firmware metadata, calibration data, or security keys that require higher protection granularity than the main memory array.