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Renesas M30162040054X0IWAR

Part No.:
M30162040054X0IWAR
Manufacturer:
Renesas
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixM30162040054X0IWAR.pdf
Description:
IC RAM 16MBIT 54MHZ 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,733

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Product details

Overview

M30162040054X0IWAR from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, 1.71–2.0V or 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C) in 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write latency, infinite endurance, and data retention without backup power - ideal for factory automation controllers requiring deterministic write persistence.

For engineers reviewing the M30162040054X0IWAR datasheet, M30162040054X0IWAR pinout, M30162040054X0IWAR application, or M30162040054X0IWAR equivalent, key selection criteria include QSPI DDR timing compliance, dual-voltage operation, hardware/software write protection, 256-byte augmented storage array, and industrial-grade thermal reliability.

Technical Context

The M30162040054X0IWAR implements a 40nm pMTJ spin-transfer torque MRAM array with quad SPI (QPI: 4-4-4) interface supporting both SDR and DDR modes. Its architecture includes dedicated command/address/data buffers, status/configuration registers, and independent 256-byte augmented storage array with per-section write protection.

It supports eXecute-In-Place (XIP), Deep Power Down (EDP/B9h), and Hibernate (EHBN/BAh) modes while maintaining full configuration state and data integrity. The device uses JEDEC-standard reset and provides 64-bit unique ID plus user-programmable 64-bit serial number for traceability.

Key Specifications

Parameter Value and Actual Design Meaning
Density 16 Mbit (2 MByte) main memory array - supports large firmware parameter tables and real-time logging without wear leveling.
Interface Quad SPI (QPI, 4-4-4) with DDR mode at 54MHz - enables 432 MB/s effective throughput for burst reads/writes.
Voltage Range 1.71–2.00V or 2.70–3.60V - compatible with both 1.8V and 3.3V system rails without level shifters.
Operating Temp −40°C to +85°C (Industrial) - qualified for uncontrolled ambient environments in PLCs and motor drives.
Endurance & Retention Virtually unlimited write cycles (>10¹⁵) and >20-year data retention at 85°C - eliminates refresh overhead and lifetime estimation uncertainty.
Package 8-pad DFN (WSON), 5.0 × 6.0 mm - surface-mount footprint compatible with high-density industrial PCB layouts.
Protection Hardware WP# pin + software-configurable block protect (BP[2:0]) and top/bottom select - enables granular, field-updatable security policies.

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm, 0.5 mm pitch, exposed thermal pad (EP). RoHS-compliant, moisture sensitivity level (MSL) 3.

Pin/Terminal Circuit Role Design Meaning
CS# Chip Select Input Active-low enable; falling edge initiates instruction sequence; high puts device in standby with tri-stated I/Os.
WP# / IO[2] Write Protect Input / Bidirectional Data 2 In Single SPI: hardware write lock for status register when WP# = Low and WP#EN = 1; in QPI: bidirectional data lane.
SI / IO[0] Serial Input / Bidirectional Data 0 In Single SPI: command/address/data input on rising CLK edge; in QPI: primary bidirectional data lane.
CLK Clock Input Synchronous timing reference; DDR mode uses both rising/falling edges for address/data transfer.
IO[3] Bidirectional Data 3 QPI-only data lane; must be tied to VCC if unused in lower-pin-count modes.
SO / IO[1] Serial Output / Bidirectional Data 1 In Single SPI: data output on falling CLK edge; in QPI: secondary bidirectional data lane.
VCC Power Supply Core and I/O supply; supports 1.8V or 3.3V operation; requires local 100nF + 1µF decoupling.
VSS Ground Common return path for core and I/O; must be low-impedance connection to minimize noise coupling.

Key Features

Feature Design Value
eXecute-In-Place (XIP) Enables continuous read sequences without repeated command overhead - reduces random access latency by up to 40% vs standard SPI.
Augmented Storage Array 256-byte user-programmable section, divided into eight 32-byte protected blocks - ideal for storing calibration data, MAC addresses, or firmware version stamps.
JEDEC Reset Support Standardized reset command (66h) ensures interoperability with existing SPI host firmware stacks without custom initialization logic.
Dual-Voltage Operation Single device supports both 1.8V and 3.3V systems - simplifies BOM management across product variants and voltage domains.
Deep Power Down Mode Enters sub-1µA quiescent current state in ≤3 µs and exits in ≤400 µs - enables rapid wake-up in energy-constrained edge nodes.

Applications

Factory Automation Controller Multifunction Printer Engine

Use Scenario: Storing motion control profiles, axis calibration offsets, and recipe parameters that must survive unexpected power loss.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory replacing battery-backed SRAM or slow NAND with ECC overhead.

Use Value: Eliminates supercapacitor/battery maintenance, guarantees sub-100ns write completion, and sustains >10¹⁵ writes over product lifetime.

Use Scenario: Caching raster image buffers and job metadata during high-speed duplex printing with frequent power cycling.

IC Role / Device Role / Timing Role: High-reliability frame buffer extension with deterministic write latency under thermal stress.

Use Value: Prevents print job corruption during brownouts; retains critical job state without delay or checksum verification.

Industrial Data Router Medical Diagnostic Imaging Module

Use Scenario: Logging network packet timestamps, error counters, and firmware update staging in DIN-rail mounted routers.

IC Role / Device Role / Timing Role: Persistent configuration and telemetry store interfaced via microcontroller SPI peripheral.

Use Value: Enables zero-latency writes during traffic bursts; maintains data integrity across −40°C to +85°C ambient swings.

Use Scenario: Storing sensor calibration coefficients, DICOM header templates, and last-known-safe operating parameters in portable ultrasound units.

IC Role / Device Role / Timing Role: Fail-safe parameter vault with tamper-resistant write protection and traceable serial identity.

Use Value: Meets IEC 62304 Class C software requirements for persistent data; supports audit-ready 64-bit unique ID and programmable serial number.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress Semiconductors FM25V10-G 1 Mbit F-RAM; 40 MHz SPI; 2.0–3.6V only; no DDR mode; no augmented storage array. Limited density and voltage flexibility; lacks QPI and XIP - suitable only for small config stores. Select when ultra-low write energy (<3.5 µJ) is prioritized over density and speed.
Infineon Technologies CY14V108N-ZSP25XI 8 Mbit nvSRAM; 25 MHz parallel interface; 3.0–3.6V only; requires external capacitor for write-back. Parallel bus increases pin count and layout complexity; capacitor dependency adds BOM cost and failure mode. Select only for legacy parallel-interface designs where migration to serial is not feasible.

Compared with FM25V10-G and CY14V108N-ZSP25XI, the M30162040054X0IWAR offers 2× higher density than the F-RAM, 100% higher interface bandwidth than the nvSRAM, dual-voltage support, and integrated augmented storage - making it optimal for new industrial designs demanding scalability, low latency, and long-term data integrity.

Availability

M30162040054X0IWAR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic modules, and industrial data routers requiring stable component supply, long-lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for M30162040054X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30162040054X0IWAR belongs to Renesas' Persistent SRAM (P-SRAM) family - engineered to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems where data persistence, speed, and reliability are non-negotiable.

FAQ

What is the maximum clock frequency supported by M30162040054X0IWAR in DDR mode?

The M30162040054X0IWAR supports Double Data Rate (DDR) mode at 54 MHz, delivering an effective interface bandwidth of 432 MB/s in Quad SPI (4-4-4) configuration. This is confirmed in the "Features" section of the datasheet and validated in Table 3 (Interface Modes) and Table 4 (Clock Edge Usage). The part number suffix "0054" explicitly denotes the 54 MHz DDR capability.

Does M30162040054X0IWAR require an external backup power source or capacitor?

No, the M30162040054X0IWAR does not require any external backup power source, capacitor, or battery. As a true non-volatile MRAM, it retains data indefinitely at power-off using intrinsic magnetic storage. This eliminates the reliability risks, size penalties, and lifetime limitations associated with capacitor-based nvSRAM or battery-backed SRAM solutions.

Can M30162040054X0IWAR operate at both 1.8V and 3.3V supply voltages?

Yes, the M30162040054X0IWAR supports two independent VCC ranges: 1.71–2.00 V and 2.70–3.60 V. This dual-voltage capability is specified in the "Features" section and Table 7 (1.8V timing) and Table 6 (3.0V timing). The device automatically adapts to the applied rail - no configuration or external circuitry is needed.

How is write protection implemented on M30162040054X0IWAR?

M30162040054X0IWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, configurable via Status Register bit SR[7]), and software-based via block protect bits (BP[2:0]) and top/bottom select (TBSEL) in the Status Register. Both mechanisms can be used independently or concurrently to safeguard memory regions including the 256-byte augmented storage array.

Is the 256-byte Augmented Storage Array on M30162040054X0IWAR separately addressable and protected?

Yes, the 256-byte Augmented Storage Array on M30162040054X0IWAR resides at fixed address range 000000h–0000FFh and is partitioned into eight 32-byte sections (0–7). Each section can be individually programmed and write-protected using the Augmented Storage Array Protection Register (ASAPR), enabling secure storage of calibration data, serial numbers, or cryptographic keys without affecting main memory.

M30162040054X0IWAR Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
RAM
Technology:
MRAM (Magnetoresistive RAM)
Memory Size:
16Mbit
Memory Organization:
4M x 4
Memory Interface:
-
Clock Frequency:
54 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

M30162040054X0IWAR FAQ

1.How can I place an order for M30162040054X0IWAR through Aetrix?

Please submit a Request for Quotation (RFQ) for M30162040054X0IWAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M30162040054X0IWAR reliable?

The price and inventory of M30162040054X0IWAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M30162040054X0IWAR is usually 5 days.

3.What payment methods are accepted for M30162040054X0IWAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M30162040054X0IWAR transactions.

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4.How is shipping managed for M30162040054X0IWAR?

M30162040054X0IWAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M30162040054X0IWAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M30162040054X0IWAR?

For technical support, including M30162040054X0IWAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M30162040054X0IWAR requirements.

6.How does Aetrix verify that M30162040054X0IWAR is sourced from the original manufacturer or authorized distributors?

All M30162040054X0IWAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M30162040054X0IWAR meets industry standards.

7.What is the process for return or replacement of M30162040054X0IWAR?

All M30162040054X0IWAR units undergo pre-shipment inspection (PSI). If there is an issue with M30162040054X0IWAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M30162040054X0IWAR part is unused and in its original packaging.

Return procedure for M30162040054X0IWAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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