Renesas M30162040054X0IWAY

Overview

M30162040054X0IWAY from Renesas is a 16Mbit serial STT-MRAM non-volatile memory with QSPI interface, 54MHz DDR timing, 1.71–2.0V or 2.7–3.6V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible random read/write latency with persistent data retention, suited for real-time industrial logging and configuration storage.

For engineers reviewing the M30162040054X0IWAY datasheet, M30162040054X0IWAY pinout, M30162040054X0IWAY application, or M30162040054X0IWAY equivalent, this page provides verified technical context, pin-level functional roles, JEDEC-compliant reset support, hardware/software write protection, and XIP-enabled low-latency execution-in-place operation.

Technical Context

The M30162040054X0IWAY implements a 40nm pMTJ spin-transfer torque MRAM array with true random-access behavior, supporting both SDR (108MHz) and DDR (54MHz) QSPI modes across 1-1-1, 1-4-4, and 4-4-4 command-address-data configurations. Its architecture includes dedicated high-voltage generation for write operations and dual low-power states-Deep Power Down (IDPD) and Hibernate (IHBN)-with full data retention and register state preservation.

It integrates an 8-bit instruction register, status/configuration registers at fixed memory-mapped addresses (e.g., Status Register at 0x000000h), and a 256-byte Augmented Storage Array segmented into eight 32-byte programmable/protectable sections. Initialization requires tPU ≥250µs after VCC ramp-up, and CS# must follow VCC with external 10kΩ pull-up.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm, wettable flank, RoHS-compliant. Pin 1 marked by chamfered corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with CY14B116L-BA25XI and MR25H16MDF, the M30162040054X0IWAY uniquely combines QSPI DDR timing, XIP execution, and integrated hardware/software protection in a compact DFN package-making it optimal for space-constrained, latency-sensitive industrial controllers where serial interface compatibility and zero-write-endurance constraints are critical.

Availability

M30162040054X0IWAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed RoHS/REACH compliance.

Supply support for M30162040054X0IWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The M30162040054X0IWAY belongs to Renesas' Persistent SRAM (P-SRAM) family-designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems demanding instant-on, infinite endurance, and seamless SPI integration.

FAQ

What is the operating voltage range for M30162040054X0IWAY?

The M30162040054X0IWAY supports two independent supply ranges: 1.71 V to 2.00 V and 2.70 V to 3.60 V. Both ranges are fully specified across the −40°C to +85°C industrial temperature range. The device automatically adapts internal regulation and timing to the applied VCC level-no external configuration is needed. This dual-voltage capability allows direct integration into mixed-rail systems without level-shifting circuitry.

Does M30162040054X0IWAY support Execute-In-Place (XIP)?

Yes, the M30162040054X0IWAY supports eXecute-In-Place (XIP) mode, allowing sequential instruction fetches without repeating the read command byte. Entry is triggered by sending the XIP enable byte (0xAxh) after the address in a read sequence. This reduces command overhead and improves effective read throughput-particularly beneficial for boot code execution and firmware patching in resource-constrained microcontrollers.

How is write protection implemented on M30162040054X0IWAY?

M30162040054X0IWAY implements dual-layer write protection: hardware-based via the WP# pin (active-low, enabled by SR[7]), and software-based via configuration bits in the Status Register (TBSEL, BPSEL[2:0]). These mechanisms can be combined-for example, locking the top 128KB while leaving bottom sectors open for runtime logging. Protection applies to both main memory and the Augmented Storage Array.

What package type does M30162040054X0IWAY use?

M30162040054X0IWAY uses an 8-pad DFN (WSON) package measuring 5.0 mm × 6.0 mm with wettable flanks. This compact, lead-free, RoHS-compliant package supports standard reflow soldering and offers superior thermal performance versus SOIC. Pinout matches industry-standard serial NOR Flash footprints-enabling drop-in replacement in many existing designs.

Is M30162040054X0IWAY compatible with standard SPI controllers?

Yes, the M30162040054X0IWAY is fully compatible with standard SPI controllers supporting modes 0 (CPOL=0, CPHA=0) and 3 (CPOL=1, CPHA=1). It operates in Single SPI (1-1-1), Dual SPI (1-2-2), and Quad SPI (1-4-4 or 4-4-4) configurations. DDR mode is supported only in SPI Mode 0. All timing parameters-including tCSDPD (50 ns CS# pulse width) and tPU (250 µs power-up delay)-are aligned with JEDEC SPI standards.