Renesas M30162040054X0PSAY

Overview

M30162040054X0PSAY from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with Quad SPI (QSPI) interface, 54MHz DDR timing, 1.71–2.0V or 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers SRAM-compatible read/write latency, infinite endurance, and data retention without backup power - deployed in real-time industrial control and medical diagnostics systems requiring deterministic write persistence.

For engineers reviewing the M30162040054X0PSAY datasheet, M30162040054X0PSAY pinout, M30162040054X0PSAY application, or M30162040054X0PSAY equivalent, this page provides verified technical context, package mapping, QSPI timing behavior, hardware/software write protection mechanisms, and validated alternative MRAM options for high-reliability embedded storage.

Technical Context

The M30162040054X0PSAY implements a 40nm pMTJ spin-transfer torque MRAM array with Quad SPI (4-4-4) interface supporting both SDR and DDR modes. Its architecture includes dedicated command/address/data I/O lanes (IO[0]–IO[3]), hardware WP# pin control, and status register–based software protection enabling selective block-level memory locking.

It features eXecute-In-Place (XIP) mode to eliminate per-access command overhead, two low-power states (Deep Power Down and Hibernate) preserving configuration and data, and a 256-byte user-programmable Augmented Storage Array with per-section write protection - all operating within JEDEC-compliant reset and initialization sequences.

Key Specifications

Pinout & Package

8-pin SOIC package (5.2 mm × 5.2 mm), surface-mount, lead-free, moisture sensitivity level 3. Pin 1 marked by notch or dot; pin 1 is CS#.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with FM16W08 and MR25H10MDF, the M30162040054X0PSAY offers higher density, dual-voltage operation, industrial-plus temperature range, QPI DDR performance, and integrated security features - making it optimal for next-generation industrial and medical edge devices demanding scalable, future-proof non-volatile memory.

Availability

M30162040054X0PSAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for M30162040054X0PSAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30162040054X0PSAY belongs to Renesas' Persistent SRAM (P-SRAM) product line - engineered to replace battery-backed SRAM and legacy Flash/EEPROM in applications demanding instant-write non-volatility, ultra-high endurance, and deterministic timing.

FAQ

What is the maximum supported clock frequency for M30162040054X0PSAY in Double Data Rate mode?

The M30162040054X0PSAY supports 54 MHz DDR clock frequency, delivering 108 MT/s effective throughput. This is confirmed in the "Features" section of the datasheet and validated in Table 3 (Interface Modes) and Table 4 (Clock Edge Usage). The part number suffix "0054" explicitly denotes the 54 MHz DDR variant, distinct from the 108 MHz SDR option ("0108").

Does M30162040054X0PSAY support both 1.8V and 3.3V supply voltages simultaneously?

No - the M30162040054X0PSAY operates on either 1.71–2.00 V or 2.70–3.60 V, but not both concurrently. The voltage range is selected at manufacturing via the "Operational Voltage" digit in the part number: "1" = 1.8 V range, "3" = 3.0 V range. M30162040054X0PSAY uses "1", confirming 1.8 V operation. Mixing supplies violates absolute maximum ratings.

How is write protection implemented on M30162040054X0PSAY?

M30162040054X0PSAY implements dual-layer write protection: hardware-based via the WP# pin (active-low, controls status register writes when enabled), and software-based via Status Register bits (TBSEL, BPSEL[2:0]) for top/bottom and block-level memory array locking. Both mechanisms can be used together or independently, and the Augmented Storage Array supports per-section write protection.

What is the purpose of the Augmented Storage Array in M30162040054X0PSAY?

The Augmented Storage Array is a dedicated 256-byte memory region separate from the main 16 Mbit array. It is divided into eight 32-byte sections, each individually programmable and write-protectable. It is intended for storing secure configuration data, calibration constants, or firmware keys - leveraging its independent protection to prevent accidental or malicious overwrite of critical parameters.

Is M30162040054X0PSAY pin-compatible with other members of the Mxxxx204 family?

Yes - all Mxxxx204 variants, including M30162040054X0PSAY, share identical 8-pin SOIC and 8-pad DFN (WSON) packages with identical pinouts and signal assignments (CS#, WP#/IO[2], SI/IO[0], CLK, IO[3], SO/IO[1], VCC, VSS). This allows drop-in replacement across densities (4/8/16 Mbit) and speed grades (54/108 MHz) within the same package type.