Renesas M30162040054X0PWAR

Overview

M30162040054X0PWAR from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, 1.71–2.0V or 2.7–3.6V supply, industrial-plus temperature range (−40°C to +105°C), and 8-pad DFN (WSON) package. It serves as persistent SRAM replacement in real-time data logging and firmware storage applications requiring zero write latency and infinite endurance.

For engineers reviewing the M30162040054X0PWAR datasheet, M30162040054X0PWAR pinout, M30162040054X0PWAR application, or M30162040054X0PWAR equivalent, key selection criteria include its dual-voltage support, hardware/software write protection, 256-byte augmented storage array, JEDEC reset compliance, and compatibility with SPI Mode 0/3 in SDR/DDR configurations.

Technical Context

The M30162040054X0PWAR implements a 40nm pMTJ spin-transfer torque MRAM array with true random access, enabling simultaneous read/write without erase cycles. Its QSPI interface supports x4 I/O (1-4-4) command-address-data structure and executes instructions on both clock edges in DDR mode at 54MHz.

It integrates dedicated registers for status control, configuration (four registers), device identification (64-bit unique ID), user serial number (64-bit programmable), and augmented storage protection. Power management includes Deep Power Down (3µs entry, 400µs exit) and Hibernate modes with full configuration retention.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0 mm × 6.0 mm, moisture sensitivity level 3, RoHS & REACH compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V10-G and CY14V104N-ZSP25XI, the M30162040054X0PWAR delivers 4× higher density than the F-RAM, supports modern QSPI DDR at 54MHz, operates across dual voltage rails, and includes integrated augmented storage and JEDEC reset - making it optimal for new industrial and medical designs requiring scalability and feature richness.

Availability

M30162040054X0PWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for M30162040054X0PWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 product line delivers persistent SRAM-class performance using STT-MRAM technology, targeting applications demanding instant-write non-volatility, extreme endurance, and seamless SPI/QSPI interoperability in harsh thermal environments.

FAQ

What voltage ranges does the M30162040054X0PWAR support?

The M30162040054X0PWAR supports two independent supply ranges: 1.71 V to 2.00 V and 2.70 V to 3.60 V. This dual-voltage capability allows direct integration into both 1.8 V and 3.3 V system designs without level-shifting circuitry. The device automatically adapts internal logic thresholds based on applied VCC, and all timing specifications remain valid across both ranges as confirmed in the official Renesas datasheet revision Feb.21.23.

Does the M30162040054X0PWAR support execute-in-place (XIP) functionality?

Yes, the M30162040054X0PWAR supports eXecute-In-Place (XIP) mode, allowing sequential instruction fetches without repeating the read command for each access. XIP is enabled by sending a special byte (Axh) after the address during a read sequence. This reduces command overhead and improves effective read bandwidth - a documented feature in Section 6 of the M30162040054X0PWAR datasheet, validated for both SDR and DDR QSPI modes.

How is write protection implemented on the M30162040054X0PWAR?

The M30162040054X0PWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, requires WP#EN bit set in Status Register) and software-based via configuration bits (BPSEL[2:0], TBSEL) in the Status Register. These mechanisms independently control write access to the main memory array and status register. The WP# pin has no internal pull-up and must be actively driven - a requirement explicitly stated in Table 2 of the M30162040054X0PWAR datasheet.

What is the purpose of the Augmented Storage Array in the M30162040054X0PWAR?

The Augmented Storage Array is a dedicated 256-byte memory region physically separate from the main 16 Mbit array, divided into eight 32-byte sections. Each section can be individually programmed and write-protected via the Augmented Storage Array Protection Register. It is intended for storing infrequently modified but mission-critical data such as calibration coefficients, security keys, or device-specific identifiers - a function confirmed in Sections 9 and 11.2 of the M30162040054X0PWAR datasheet.

Is the M30162040054X0PWAR compatible with standard SPI protocols?

Yes, the M30162040054X0PWAR is fully compatible with standard SPI protocols, supporting both SPI Mode 0 (CPOL = 0, CPHA = 0) and SPI Mode 3 (CPOL = 1, CPHA = 1). It operates in Single SPI (1-1-1), Dual SPI (1-2-2), and Quad SPI (1-4-4 or 4-4-4) configurations, with explicit timing definitions for command, address, and data phases in both SDR and DDR modes - all detailed in Tables 3 and 4 of the M30162040054X0PWAR datasheet.