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Renesas M30162040054X0PWAY
- Part No.:
- M30162040054X0PWAY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
M30162040054X0PWAY.pdf
- Description:
- IC RAM 16MBIT 54MHZ 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,200
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Product details
Overview
M30162040054X0PWAY from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with Quad SPI (4-4-4) interface, 54MHz DDR clock support, 1.71–2.0V or 2.7–3.6V dual supply range, and industrial-plus temperature rating (−40°C to +105°C). It delivers SRAM-compatible read/write timing with persistent data retention, used in real-time industrial control logging and firmware parameter storage where power loss resilience and low-latency writes are critical.
For engineers reviewing the M30162040054X0PWAY datasheet, M30162040054X0PWAY pinout, M30162040054X0PWAY application, or M30162040054X0PWAY equivalent, key selection considerations include its 8-pad DFN (WSON) package, hardware/software write protection (WP# pin + configuration registers), 256-byte augmented storage array, JEDEC reset compliance, and QSPI x4 interface mode support - all verified for high-reliability embedded systems requiring zero-write-cycle endurance.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque technology, enabling true random-access reads/writes without erase cycles and retaining data indefinitely without power. Its architecture integrates command/address/data buffers, status/configuration registers, and an independent 256-byte augmented storage array with per-section write protection.
The device supports SPI Mode 0 (CPOL=0, CPHA=0) for both SDR and DDR operation, with data output always aligned to the falling clock edge. It implements two low-power states - Deep Power Down (IDPD) and Hibernate (IHBN) - preserving full register state and memory contents while reducing current to microamp levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16 Mbit (2 MByte) main memory array - supports large firmware parameter tables or real-time sensor log buffers without wear leveling. |
| Interface | Quad SPI (4-4-4) - enables 4-bit parallel data transfer on address and data phases, doubling throughput vs. standard SPI in same clock frequency. |
| Max Clock Speed | 54 MHz DDR - achieves up to 432 Mbps effective data rate (4 × 54 MHz × 2 edges), suitable for burst-mode logging at sub-microsecond latency. |
| Supply Voltage | 1.71–2.00 V or 2.70–3.60 V - dual-range compatibility allows direct integration into 1.8V or 3.3V industrial MCU subsystems without level shifters. |
| Operating Temp | −40°C to +105°C (Industrial Plus) - qualified for under-hood automotive ECUs, factory automation controllers, and medical diagnostic equipment enclosures. |
| Endurance & Retention | Virtually unlimited write cycles (>10¹⁵) and >20-year data retention at 105°C - eliminates refresh overhead and lifetime estimation uncertainty in mission-critical storage. |
| Package | 8-pad DFN (WSON), 5.0 mm × 6.0 mm - surface-mount footprint compatible with automated assembly and thermal management in space-constrained industrial PCBs. |
Pinout & Package
8-pad DFN (WSON) package, 5.0 mm × 6.0 mm, moisture sensitivity level (MSL) 3, lead-free and RoHS/REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS# | Chip Select Input | Active-low enable signal; must be driven low before any instruction; high state places device in standby with tri-stated outputs. |
| WP# / IO[2] | Write Protect Input / Bidirectional Data 2 | In Single SPI mode: hardware write protect for status register when WP# = Low and SR[7] = 1; in Quad SPI: bidirectional I/O for address/data transfer. |
| SI / IO[0] | Serial Input / Bidirectional Data 0 | In Single SPI: command/address/data input on rising clock edge; in Quad SPI: part of 4-bit I/O bus for command transmission. |
| CLK | Clock Input | Synchronous timing reference; DDR mode uses both rising and falling edges for data capture - requires precise clock jitter control (<100 ps). |
| IO[3] | Bidirectional Data 3 | Quad SPI data lane; used for address and data I/O in 1-4-4 and 4-4-4 modes; must be pulled high if unused in lower-pin-count configurations. |
| SO / IO[1] | Serial Output / Bidirectional Data 1 | In Single SPI: data output on falling clock edge; in Quad SPI: part of 4-bit I/O bus for data output during read operations. |
| VCC | Power Supply | Single supply for core logic and I/O; supports 1.8V or 3.3V operation; requires local 100 nF ceramic decoupling adjacent to pin. |
| VSS | Ground | Common return path for core and I/O; must be connected to low-impedance system ground plane to maintain signal integrity on high-speed SPI lines. |
Key Features
| Feature | Design Value |
|---|---|
| eXecute-In-Place (XIP) | Enables continuous read sequences without repeated command issuance - reduces instruction overhead by ~40% in firmware code execution scenarios. |
| Augmented Storage Array | 256-byte user-programmable memory with 8 individually protected 32-byte sections - ideal for storing calibrated sensor offsets or secure boot keys with granular write lock control. |
| Hardware + Software Protection | WP# pin + configurable Status Register bits (SR[7], SR[4:2]) allow layered protection - prevents accidental writes to critical registers or memory blocks during field updates. |
| JEDEC Reset Support | Standardized reset command (66h) restores device to known operational state - simplifies recovery after brownout or watchdog timeout in safety-critical applications. |
| Deep Power Down Mode | Reduces ICC to ≤1 µA while preserving all memory and register contents - extends battery life in always-on industrial sensors without data loss risk. |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time logging of PLC motion profiles and sensor fault events across multi-axis robotic cells. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory for timestamped event buffers, accessed via QSPI burst reads during idle CPU cycles. Use Value: Eliminates flash wear-out concerns during 100+ Hz logging; retains last 10,000 fault records across unexpected power loss without backup capacitors. |
Use Scenario: Storing calibration coefficients and patient-specific imaging parameters in portable ultrasound units. IC Role / Device Role / Timing Role: Persistent parameter store accessed during boot and runtime via XIP-enabled read sequences. Use Value: Guarantees coefficient integrity after 10,000+ power cycles; supports deterministic <500 ns read latency required for real-time image processing pipelines. |
| Industrial Control And Monitoring | Data Switches And Routers |
Use Scenario: Firmware update staging and rollback metadata storage in DIN-rail mounted RTUs operating in unconditioned environments. IC Role / Device Role / Timing Role: Dual-voltage (1.8V/3.3V) non-volatile memory holding signed firmware images and version manifests. Use Value: Enables atomic firmware swaps with zero write latency; retains valid prior image even after partial update failure at −40°C ambient. |
Use Scenario: Storing MAC address tables, port configuration snapshots, and QoS policy rules in carrier-grade Ethernet switches. IC Role / Device Role / Timing Role: High-endurance configuration store updated dynamically during topology changes via SPI DMA transfers. Use Value: Supports 10⁶+ daily config writes over 15-year product lifecycle; maintains table consistency during hot-swap module insertion without external NVRAM controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile serial memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress Semiconductors FM25V16-G | 16Mb F-RAM; 40 MHz SPI max; single 2.7–3.6V supply only; no DDR mode; no augmented storage array. | Limited to 3.3V systems; lacks QSPI x4 and hardware write protect pin; lower bandwidth for burst logging. | Select when cost-sensitive 3.3V-only designs prioritize ultra-low write energy over speed and dual-voltage flexibility. |
| Infineon Technologies CY14B116N-ZSP25XI | 16Mb nvSRAM; 25 MHz SPI; requires external capacitor for data retention; 3.3V only; no DDR or QSPI x4. | Capacitor-dependent retention introduces reliability risk in high-temp or long-life deployments; slower access limits real-time use cases. | Select only for legacy 3.3V systems where capacitor-based retention is already validated and bandwidth requirements are <100 Mbps. |
Compared with FM25V16-G and CY14B116N-ZSP25XI, M30162040054X0PWAY provides higher bandwidth (432 Mbps vs. ≤320 Mbps), dual-voltage operation, integrated hardware/software protection, and guaranteed 105°C retention - making it optimal for next-generation industrial edge nodes demanding deterministic performance and extended temperature resilience.
Availability
M30162040054X0PWAY is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic instruments, and industrial data routers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for M30162040054X0PWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M30162040054X0PWAY belongs to Renesas' Persistent SRAM (P-SRAM) family, engineered to replace battery-backed SRAM and legacy nvSRAM in applications demanding instant-write non-volatility, zero maintenance, and extended temperature operation.
FAQ
What voltage ranges does the M30162040054X0PWAY support?
M30162040054X0PWAY supports two independent supply ranges: 1.71 V to 2.00 V for 1.8 V systems and 2.70 V to 3.60 V for 3.3 V systems. Both ranges are fully specified across the full −40°C to +105°C operating temperature. The device automatically adapts internal regulation and timing to the applied VCC, eliminating need for external voltage translators in mixed-supply designs.
Does the M30162040054X0PWAY require a backup capacitor or battery for data retention?
No, the M30162040054X0PWAY does not require any external capacitor or battery. As a magneto-resistive RAM (MRAM), it retains data indefinitely without power due to its intrinsic non-volatility. All 16 Mbit of main memory and the 256-byte augmented storage array preserve contents across infinite power cycles and temperature extremes up to +105°C.
What is the function of the WP# pin on the M30162040054X0PWAY?
On the M30162040054X0PWAY, the WP# pin provides hardware-level write protection for the status register when enabled via SR[7]. When WP# is driven low and SR[7] = 1, writes to the status register are blocked - preventing accidental disablement of software-based memory protection features. In Quad SPI mode, WP# serves as IO[2] for bidirectional data transfer.
Can the M30162040054X0PWAY operate in Double Data Rate (DDR) mode at 54 MHz?
Yes, the M30162040054X0PWAY is rated for 54 MHz DDR operation, achieving 432 Mbps effective throughput in Quad SPI (4-4-4) mode. This requires SPI Mode 0 (CPOL=0, CPHA=0) and proper board layout with matched trace lengths and controlled impedance (50 Ω) to maintain signal integrity on all four I/O lines during dual-edge sampling.
How is the 256-byte Augmented Storage Array organized and protected on the M30162040054X0PWAY?
The M30162040054X0PWAY's 256-byte Augmented Storage Array is divided into eight 32-byte sections (0x000000–0x0000FF), each independently programmable and write-protectable via configuration bits in the Augmented Storage Array Protection Register. Protection is enforced at section level, allowing secure storage of calibration data, cryptographic keys, or serial numbers with granular access control.
M30162040054X0PWAY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 4M x 4
- Memory Interface:
- -
- Clock Frequency:
- 54 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
M30162040054X0PWAY FAQ
1.How can I place an order for M30162040054X0PWAY through Aetrix?
Please submit a Request for Quotation (RFQ) for M30162040054X0PWAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M30162040054X0PWAY reliable?
The price and inventory of M30162040054X0PWAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M30162040054X0PWAY is usually 5 days.
3.What payment methods are accepted for M30162040054X0PWAY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M30162040054X0PWAY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M30162040054X0PWAY?
M30162040054X0PWAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M30162040054X0PWAY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M30162040054X0PWAY?
For technical support, including M30162040054X0PWAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M30162040054X0PWAY requirements.
6.How does Aetrix verify that M30162040054X0PWAY is sourced from the original manufacturer or authorized distributors?
All M30162040054X0PWAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M30162040054X0PWAY meets industry standards.
7.What is the process for return or replacement of M30162040054X0PWAY?
All M30162040054X0PWAY units undergo pre-shipment inspection (PSI). If there is an issue with M30162040054X0PWAY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M30162040054X0PWAY part is unused and in its original packaging.
Return procedure for M30162040054X0PWAY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M30162040054X0PWAY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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