Renesas M30162040108X0ISAR

Overview

M30162040108X0ISAR from Renesas is a 16Mbit serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) with QSPI interface, 108MHz SDR operation, 1.71–2.0V or 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers SRAM-compatible read/write timing with true non-volatility, enabling persistent data storage in real-time control systems.

For engineers reviewing the M30162040108X0ISAR datasheet, M30162040108X0ISAR pinout, M30162040108X0ISAR application, or M30162040108X0ISAR equivalent, key selection criteria include its 108MHz SDR QSPI speed, dual-voltage support, hardware/software write protection, 256-byte augmented storage array, and industrial-grade reliability for deterministic embedded data logging.

Technical Context

The M30162040108X0ISAR implements a 40nm pMTJ STT-MRAM cell architecture with eXecute-In-Place (XIP) capability, supporting command-address-data configurations up to 4-4-4 in QPI mode. Its SPI controller supports both Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1), with DDR and SDR clocking schemes.

It integrates dual power states-Deep Power Down (IDPD ≤ 10 µA) and Hibernate (IHBN ≤ 25 µA)-while retaining full configuration and memory contents. The device uses a dedicated 8-bit instruction register and supports JEDEC Reset, unique 64-bit ID, and user-programmable 64-bit serial number.

Key Specifications

Pinout & Package

8-pin SOIC package (5.2 mm × 5.2 mm), RoHS-compliant, surface-mountable with standard reflow profile. Pin 1 marked by notch or dot; lead finish is matte tin.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with FM25V10-G and W25Q16JWxxMQ, the M30162040108X0ISAR uniquely combines 16 Mbit density, 108 MHz SDR QSPI, and infinite endurance in an industrial SOIC package - making it optimal for deterministic, high-write embedded systems where data persistence cannot be compromised.

Availability

M30162040108X0ISAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for M30162040108X0ISAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The M30162040108X0ISAR belongs to Renesas' Persistent SRAM (P-SRAM) product line, engineered specifically to replace battery-backed SRAM and legacy serial Flash in mission-critical industrial and medical systems demanding zero write latency and guaranteed data retention.

FAQ

What voltage ranges does the M30162040108X0ISAR support?

The M30162040108X0ISAR supports two independent supply ranges: 1.71 V to 2.00 V (1.8 V nominal) and 2.70 V to 3.60 V (3.3 V nominal). Both ranges are fully specified across the −40°C to +85°C industrial temperature range. The device automatically adapts internal regulation and timing to the applied VCC, eliminating need for external level shifters in mixed-voltage designs. This dual-voltage capability ensures seamless integration into legacy 3.3 V systems or modern ultra-low-power 1.8 V platforms.

Does the M30162040108X0ISAR require a battery or capacitor for data retention?

No, the M30162040108X0ISAR requires no external backup components. As a magneto-resistive RAM (MRAM), it retains data indefinitely without power due to magnetic storage elements - unlike battery-backed SRAM or capacitor-holdup solutions. Data remains intact through power loss, cold starts, and thermal cycling within its rated temperature range. This eliminates battery replacement logistics, leakage risks, and end-of-life disposal concerns associated with auxiliary power sources.

How does the M30162040108X0ISAR handle write protection?

The M30162040108X0ISAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, must be driven) and software-based via configuration bits in the Status Register (e.g., BPSEL[2:0], TBSEL). WP# protects the Status Register itself when enabled; software settings allow granular block-level or top/bottom memory array locking. The 256-byte Augmented Storage Array also supports per-section (32-byte) write protection. All protections remain active in Deep Power Down and Hibernate modes.

What is the purpose of the Augmented Storage Array in the M30162040108X0ISAR?

The Augmented Storage Array is a dedicated 256-byte memory region physically separate from the main 16 Mbit array. It is divided into eight 32-byte sections, each independently programmable and write-protectable. This area is intended for high-value, infrequently updated data such as device calibration coefficients, cryptographic keys, serial numbers, or firmware version stamps - where tamper resistance and guaranteed write endurance are essential. Unlike main array writes, Augmented Storage writes do not affect main memory endurance metrics.

Is the M30162040108X0ISAR pin-compatible with standard SPI NOR Flash devices?

Yes, the M30162040108X0ISAR in 8-pin SOIC package uses the industry-standard SOIC-8 footprint and identical pinout (CS#, WP#/IO[2], SI/IO[0], CLK, IO[3], SO/IO[1], VCC, VSS) as common SPI NOR Flash devices like Winbond W25Q series or Macronix MX25L series. No PCB layout changes are required for drop-in replacement - though firmware must be updated to leverage MRAM-specific features (e.g., no erase commands, XIP mode, DDR timing).