Renesas M30162040108X0IWAR

Overview

M30162040108X0IWAR from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock speed, 1.71–2.0V supply voltage, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible random read/write timing with persistent data retention-ideal for factory automation controllers requiring deterministic write latency and zero refresh overhead.

For engineers reviewing the M30162040108X0IWAR datasheet, M30162040108X0IWAR pinout, M30162040108X0IWAR application, or M30162040108X0IWAR equivalent, key selection criteria include its 108MHz SDR QSPI performance, hardware/software write protection, 256-byte augmented storage array, JEDEC reset support, and compatibility with industrial-grade embedded systems requiring >10¹⁵ write cycles and 20-year data retention.

Technical Context

The M30162040108X0IWAR implements a 40nm pMTJ spin-transfer torque MRAM array with quad SPI (4-4-4) interface supporting both SDR (108MHz) and DDR (54MHz) modes. Its architecture includes dedicated command/address/data I/O lanes, on-die voltage regulation, and dual low-power states (Deep Power Down, Hibernate) that preserve configuration and data without external backup power.

It features eXecute-In-Place (XIP) mode to eliminate per-access command overhead, a 256-byte user-programmable augmented storage array segmented into eight 32-byte protected sections, and dual-layer data protection via WP# pin and configurable status register bits (BPSEL[2:0], TBSEL, WP#EN).

Key Specifications

Pinout & Package

8-pad DFN (WSON) package with exposed thermal pad; RoHS-compliant, moisture-sensitive level 3 (MSL3), reflow profile compatible with standard Pb-free processes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with FM25V16-G and CY14V108N-ZSP25XI, the M30162040108X0IWAR uniquely combines 1.8V QSPI operation, 108MHz SDR speed, XIP capability, and 256-byte augmented storage-making it the only option meeting simultaneous requirements for industrial throughput, low-voltage compatibility, and embedded configurability.

Availability

M30162040108X0IWAR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, industrial network switches, and multifunction printer engine control requiring stable component supply across extended product lifecycles.

Supply support for M30162040108X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30162040108X0IWAR belongs to Renesas' Persistent SRAM (P-SRAM) family-designed specifically to replace battery-backed SRAM and legacy EEPROM/Flash in mission-critical industrial applications demanding infinite endurance, fast write performance, and guaranteed data retention.

FAQ

What is the maximum supported clock frequency for M30162040108X0IWAR in Single Data Rate mode?

The M30162040108X0IWAR supports up to 108MHz in Single Data Rate (SDR) mode, enabling 108MB/s peak read bandwidth with no wait states. This specification is guaranteed across the full industrial temperature range (−40°C to +85°C) and 1.71–2.00V supply voltage. The device also supports Double Data Rate (DDR) mode at 54MHz, delivering equivalent throughput with reduced clock frequency requirements.

Does M30162040108X0IWAR require external backup power or batteries to retain data?

No, the M30162040108X0IWAR is a true non-volatile memory based on STT-MRAM technology and retains data indefinitely without any external power source, battery, or capacitor. Its 20-year data retention at 85°C and >10¹⁵ write endurance eliminate the need for wear leveling, refresh circuits, or backup power schemes-making it a drop-in replacement for battery-backed SRAM in industrial applications.

How is write protection implemented on M30162040108X0IWAR?

The M30162040108X0IWAR implements dual-layer write protection: hardware-based via the WP# pin (which locks the status register when driven low), and software-based via configuration bits in the status register (BPSEL[2:0], TBSEL, WP#EN). These mechanisms independently protect the main memory array and the 256-byte augmented storage array, allowing granular control over which regions are writable during normal operation or firmware updates.

What package type is used for M30162040108X0IWAR, and what are its mounting considerations?

The M30162040108X0IWAR uses an 8-pad DFN (WSON) package measuring 5.0mm × 6.0mm with an exposed thermal pad. It is RoHS-compliant and moisture-sensitive level 3 (MSL3), requiring bake-before-reflow per J-STD-020. The thermal pad must be soldered to a PCB copper pour for thermal dissipation and electrical grounding; recommended stencil aperture is 70% open area to prevent voiding.

Can M30162040108X0IWAR be used in Execute-In-Place (XIP) mode, and what benefit does it provide?

Yes, the M30162040108X0IWAR supports eXecute-In-Place (XIP) mode, which allows continuous read or write operations without retransmitting the command byte for each access. This reduces instruction overhead and improves effective random access throughput-particularly valuable in real-time control loops and firmware execution from memory where deterministic latency is critical. XIP is enabled by sending a specific command byte (Axh/Fxh) after the address.