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Renesas M30162040108X0IWAY

Part No.:
M30162040108X0IWAY
Manufacturer:
Renesas
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixM30162040108X0IWAY.pdf
Description:
IC RAM 16MBIT 108MHZ 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,259

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Product details

Overview

M30162040108X0IWAY from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR operation, 1.71–2.0V supply, and industrial temperature range (−40°C to +85°C) in 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write timing, zero write latency, and persistent data retention without backup power - ideal for real-time data logging in factory automation controllers.

For engineers reviewing the M30162040108X0IWAY datasheet, M30162040108X0IWAY pinout, M30162040108X0IWAY application, or M30162040108X0IWAY equivalent, key selection criteria include its 108MHz SDR QSPI speed, hardware/software write protection (WP# pin + configuration registers), 256-byte augmented storage array, JEDEC reset support, and industrial-grade thermal performance.

Technical Context

The M30162040108X0IWAY implements a 40nm pMTJ spin-transfer torque MRAM array with true random-access capability, supporting both Single Data Rate (SDR) and Double Data Rate (DDR) QSPI modes - though this specific variant is rated for 108MHz SDR only. Its architecture includes dedicated command/address/data paths per SPI mode (e.g., 1-4-4 for Quad I/O), eXecute-In-Place (XIP) functionality, and dual power states (Deep Power Down, Hibernate) with full data retention.

It integrates hardware-based write protection via the WP# pin and software-based protection through configurable status and block protect bits (BPSEL[2:0]), plus independent 256-byte augmented storage with per-section write lock. All register access (Status, Configuration, Unique ID, Serial Number) occurs over the same QSPI bus using dedicated address-mapped register space distinct from main memory.

Key Specifications

Parameter Value and Actual Design Meaning
Density16 Mbit (2 MByte) main memory array with linear 24-bit addressing (000000h–1FFFFFh)
InterfaceQSPI (4-4-4 mode), 108 MHz SDR clock rate - enables sub-100 ns random read access with no erase cycles
Supply Voltage1.71 V – 2.00 V - compatible with modern low-voltage microcontroller I/O domains and reduces system power
Operating Temperature−40°C to +85°C (Industrial grade) - validated for continuous operation in uncontrolled factory environments
Endurance & RetentionVirtually unlimited write cycles (>10¹⁵) and ≥20-year data retention at 85°C - eliminates wear leveling firmware overhead
Package8-pad DFN (WSON), 5.0 mm × 6.0 mm - surface-mount compatible with standard reflow profiles and high-density PCB layouts
Data ProtectionHardware WP# pin + software-configurable top/bottom/block protection (BPSEL[2:0]) - prevents accidental writes during firmware updates

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm, moisture sensitivity level (MSL) 3, lead-free and RoHS/REACH compliant.

Pin/Terminal Circuit Role Design Meaning
CS#Chip Select InputActive-low enable signal; device enters standby when high, and requires falling edge before instruction start
WP# / IO[2]Bidirectional I/O / Write ProtectIn SDR mode: hardware write protect for status register when pulled low; in QPI mode: bidirectional data line IO[2]
SI / IO[0]Input / Bidirectional Data 0In SDR: serial input only; in QPI: bidirectional data line IO[0] - supports command/address/data transfer
CLKClock InputSynchronous timing reference; latches command/address on rising edge, outputs data on falling edge (SDR)
IO[3]Bidirectional Data 3QPI mode only - completes 4-line data path for high-speed quad read/write operations
SO / IO[1]Output / Bidirectional Data 1In SDR: serial output only; in QPI: bidirectional data line IO[1] - complements IO[0], IO[2], IO[3]
VCCPower Supply1.71–2.00 V core and I/O supply - decoupling capacitor required adjacent to pin per datasheet layout guidance
VSSGroundCommon reference for core and I/O circuits - must be low-impedance connection to minimize noise coupling

Key Features

Feature Design Value
STT-MRAM Technology40 nm pMTJ cell structure enabling zero write latency, no write endurance limit, and instant non-volatility without capacitors or batteries
eXecute-In-Place (XIP)Enables continuous sequential reads/writes without repeated command overhead - reduces effective access time by up to 40% vs standard SPI flash
Augmented Storage Array256-byte user-programmable section, divided into eight 32-byte lockable blocks - ideal for storing calibration data or firmware signatures
JEDEC Reset SupportStandardized reset command (66h) restores device to known state without power cycle - critical for field-upgrade reliability
Low-Power StatesDeep Power Down (IDPD) and Hibernate modes draw <1 µA while preserving all memory contents and register configurations

Applications

Factory Automation Medical Diagnostics

Use Scenario: Real-time motion control PLCs capturing sensor timestamps and actuator commands during machine cycles.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing last-known safe state and operational logs with sub-microsecond write commit.

Use Value: Eliminates battery-backed SRAM maintenance and avoids flash wear-out during frequent 100+ Hz logging - ensures deterministic fail-safe recovery.

Use Scenario: Portable ultrasound devices requiring immediate image buffer persistence after power loss during patient exams.

IC Role / Device Role / Timing Role: High-reliability frame buffer extension that retains raw scan data without delay or refresh overhead.

Use Value: Guarantees diagnostic continuity across unexpected shutdowns; meets IEC 62304 Class C data integrity requirements without external ECC logic.

Industrial Control And Monitoring Data Switches And Routers

Use Scenario: Remote RTU units in oil/gas telemetry systems logging pressure/temperature readings every 100 ms for 10+ years.

IC Role / Device Role / Timing Role: Primary non-volatile event log storage with guaranteed 20-year retention at 85°C ambient.

Use Value: Removes need for periodic SD card replacement or flash wear-leveling firmware - cuts lifecycle maintenance cost by >60%.

Use Scenario: Carrier-grade Ethernet switches storing MAC address tables and port configuration across warm reboots.

IC Role / Device Role / Timing Role: Fast-access configuration store enabling sub-50 ms switch recovery without DRAM initialization delays.

Use Value: Achieves <100 ms hitless failover by eliminating boot-time flash read bottlenecks - meets ITU-T G.8032 ring protection timing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress Semiconductors FM25V10-G1 Mbit F-RAM, 40 MHz SPI, 2.0–3.6 V supply - lower density, slower interface, wider voltage rangeLimited to smaller config stores; lacks QPI, XIP, or augmented storage - suitable only for basic parameter retentionSelect when cost sensitivity outweighs performance needs and density <4 Mbit suffices
Infineon Technologies CY14B108N-ZSP25XI8 Mbit nvSRAM, 25 MHz parallel interface, 3.0–3.6 V - higher latency, parallel bus, no QSPI supportRequires PCB redesign for 32-pin SOIC footprint and parallel bus routing - incompatible with existing SPI host designsChoose only for legacy parallel-interface systems where pin count and board space permit

Compared with FM25V10-G and CY14B108N-ZSP25XI, the M30162040108X0IWAY provides 2× higher density than the F-RAM, 4.3× faster interface than the nvSRAM, and native QSPI/XIP support - making it the sole option for high-throughput, space-constrained, and firmware-upgradable industrial systems.

Availability

M30162040108X0IWAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term obsolescence management, and guaranteed traceable sourcing.

Supply support for M30162040108X0IWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30162040108X0IWAY belongs to Renesas' Persistent SRAM (P-SRAM) product line, engineered to replace battery-backed SRAM and legacy serial flash in mission-critical systems demanding instant-write non-volatility, high endurance, and industrial temperature resilience.

FAQ

What is the operating voltage range for the M30162040108X0IWAY?

The M30162040108X0IWAY operates from 1.71 V to 2.00 V. This narrow 1.8 V nominal range ensures compatibility with modern low-power microcontrollers and reduces system-level power consumption. Operation outside this window is not guaranteed, and the device will not function below 1.71 V or above 2.00 V per datasheet specifications.

Does the M30162040108X0IWAY support Quad SPI (QPI) mode?

Yes, the M30162040108X0IWAY supports Quad SPI (QPI) mode with 4-4-4 command-address-data configuration. It achieves 108 MHz operation in Single Data Rate (SDR) QPI, delivering up to 54 MB/s effective throughput - significantly faster than standard SPI flash and enabling efficient XIP execution directly from memory.

How does write protection work on the M30162040108X0IWAY?

The M30162040108X0IWAY implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables status register writes when enabled), and software-based via BPSEL[2:0] bits in the status register (configurable top/bottom/block locking). Both mechanisms can be used independently or concurrently to safeguard memory regions during firmware updates or field operation.

What is the purpose of the Augmented Storage Array in the M30162040108X0IWAY?

The M30162040108X0IWAY includes a dedicated 256-byte Augmented Storage Array, segmented into eight 32-byte programmable sections. Each section can be individually write-protected - making it ideal for storing calibration coefficients, security keys, or firmware version stamps that require high integrity but infrequent updates, separate from main memory wear cycles.

Is the M30162040108X0IWAY pin-compatible with other members of the Mxxxx204 family?

Yes, the M30162040108X0IWAY shares identical 8-pad DFN (WSON) pinout and electrical interface with all Mxxxx204 variants, including M1004204, M3008204, and M1016204. Pin functions (CS#, CLK, IO[0–3], VCC, VSS, WP#) are fully consistent across densities and speed grades - enabling drop-in replacement within the same package and temperature grade.

M30162040108X0IWAY Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
RAM
Technology:
MRAM (Magnetoresistive RAM)
Memory Size:
16Mbit
Memory Organization:
4M x 4
Memory Interface:
-
Clock Frequency:
108 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

M30162040108X0IWAY FAQ

1.How can I place an order for M30162040108X0IWAY through Aetrix?

Please submit a Request for Quotation (RFQ) for M30162040108X0IWAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M30162040108X0IWAY reliable?

The price and inventory of M30162040108X0IWAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M30162040108X0IWAY is usually 5 days.

3.What payment methods are accepted for M30162040108X0IWAY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M30162040108X0IWAY transactions.

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M30162040108X0IWAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M30162040108X0IWAY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M30162040108X0IWAY?

For technical support, including M30162040108X0IWAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M30162040108X0IWAY requirements.

6.How does Aetrix verify that M30162040108X0IWAY is sourced from the original manufacturer or authorized distributors?

All M30162040108X0IWAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M30162040108X0IWAY meets industry standards.

7.What is the process for return or replacement of M30162040108X0IWAY?

All M30162040108X0IWAY units undergo pre-shipment inspection (PSI). If there is an issue with M30162040108X0IWAY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M30162040108X0IWAY part is unused and in its original packaging.

Return procedure for M30162040108X0IWAY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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