Renesas M30162040108X0PSAR

Overview

M30162040108X0PSAR from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock speed, 1.71–2.0V or 2.7–3.6V supply range, and industrial-plus (−40°C to +105°C) temperature rating. It delivers SRAM-compatible read/write timing, zero write latency, and persistent data retention without backup power - deployed in real-time industrial control systems requiring deterministic memory access.

For engineers reviewing the M30162040108X0PSAR datasheet, M30162040108X0PSAR pinout, M30162040108X0PSAR application, or M30162040108X0PSAR equivalent, key selection criteria include its 108MHz SDR QSPI performance, dual-voltage operation, hardware/software write protection, 256-byte augmented storage array, and support for Deep Power Down and Hibernate low-power states.

Technical Context

This MRAM uses 40nm pMTJ spin-transfer torque technology to achieve true random-access non-volatility with SRAM-like timing - enabling Execute-In-Place (XIP) and eliminating erase cycles. Its command-address-data nomenclature supports multiple SPI modes including 1-4-4 QPI and 4-4-4 QPI, all operating at up to 108MHz in SDR mode.

The device integrates dedicated registers for status, configuration, unique ID (64-bit), user-programmable serial number (64-bit), and augmented storage protection. It features dual power domains (VCC = 1.71–2.0V or 2.7–3.6V), hardware WP# pin control, and software-configurable block protection via BPSEL[2:0] bits in the Status Register.

Key Specifications

Pinout & Package

Package: 8-pin SOIC (5.2mm × 5.2mm), RoHS-compliant, industrial-plus rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with FM25V20A-G and CY14V108N-ZSP25XI, M30162040108X0PSAR provides 2× higher density, 4× faster interface speed, QPI/XIP capability, and integrated low-power states - making it optimal for next-generation industrial edge devices requiring scalable, high-bandwidth persistent memory.

Availability

M30162040108X0PSAR is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, and industrial network routers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for M30162040108X0PSAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

M30162040108X0PSAR belongs to Renesas' Persistent SRAM (P-SRAM) family - engineered to replace battery-backed SRAM and NOR flash in applications demanding instant-write non-volatility, high endurance, and deterministic timing.

FAQ

What voltage ranges does the M30162040108X0PSAR support?

M30162040108X0PSAR supports two independent VCC operating ranges: 1.71V to 2.00V for 1.8V systems and 2.70V to 3.60V for 3.3V systems. Both ranges are fully specified across the −40°C to +105°C industrial-plus temperature grade. The device automatically adapts internal regulation and timing - no external voltage translation or configuration is required when switching between rails.

Does the M30162040108X0PSAR support Quad SPI (QPI) mode?

Yes, M30162040108X0PSAR supports full 4-4-4 Quad SPI (QPI) mode with command, address, and data transferred simultaneously across four I/O lines (IO[3:0]). In QPI mode, it achieves 108MHz SDR operation - delivering 432MB/s peak bandwidth. The device also supports 1-4-4 and DPI modes, and all QPI functionality is enabled via Configuration Register settings per the datasheet instruction set.

How is write protection implemented on the M30162040108X0PSAR?

M30162040108X0PSAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, requires WP#EN bit set in Status Register), and software-based via BPSEL[2:0] and TBSEL bits in the Status Register to protect top/bottom memory blocks. The Augmented Storage Array has independent per-section (32B) lock bits, and the Serial Number Register is protected by SNPEN. All protections persist through power cycles.

What is the purpose of the Augmented Storage Array in the M30162040108X0PSAR?

The Augmented Storage Array is a dedicated 256-byte memory space physically separate from the main 16Mbit array. It is divided into eight 32-byte sections, each individually programmable and write-protectable. This area is intended for storing security keys, calibration data, or device-specific identifiers - accessed via distinct register addresses and protected independently to prevent corruption during main-array firmware updates.

Does the M30162040108X0PSAR retain data during Deep Power Down mode?

Yes, M30162040108X0PSAR retains all data - including main memory, Augmented Storage Array, and configuration registers - during Deep Power Down (EDP command). Current drops to ≤10µA while preserving full memory state and register settings. Exit time is ≤400µs (tEXDPD), and no reinitialization or register reload is required upon wake-up - ensuring seamless low-power operation in battery-backed or energy-harvesting systems.