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Renesas M30162040108X0PSAY
- Part No.:
- M30162040108X0PSAY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.209", 5.30mm Width)
- Datasheet:
-
M30162040108X0PSAY.pdf
- Description:
- IC RAM 16MBIT 108MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,536
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Product details
Overview
M30162040108X0PSAY from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock rate, 1.71–2.0V or 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers SRAM-compatible read/write timing, zero write latency, and persistent data retention without backup power - deployed in factory automation controllers for real-time parameter logging.
For engineers reviewing the M30162040108X0PSAY datasheet, M30162040108X0PSAY pinout, M30162040108X0PSAY application, or M30162040108X0PSAY equivalent, key selection criteria include QSPI x4 interface support, hardware/software write protection, 256-byte augmented storage array, JEDEC reset compliance, and dual-voltage operation across extended temperature.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque technology, enabling true random access with no erase cycles, unlimited endurance (>10¹⁵ writes), and 20-year data retention at 105°C. Its architecture integrates command/address/data buffers, status/configuration registers, and an independent 256-byte augmented storage array with per-section write protection.
The device supports Quad SPI (4-4-4) mode with both SDR (108MHz) and DDR (54MHz) operation, SPI Modes 0 and 3, and low-power states including Deep Power Down (IDPD = 2µA typical) and Hibernate (IHBN = 5µA typical). All modes retain data and configuration without external power loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16 Mbit (2 MByte) main memory array - supports full address space 0x000000–0x1FFFFF with no page/sector erase overhead. |
| Interface | QSPI (4-4-4) with SDR up to 108MHz - enables 432 MB/s peak throughput and eliminates wait states during burst reads/writes. |
| Supply Voltage | VCC = 1.71–2.00V or 2.70–3.60V - dual-voltage compatibility allows direct integration into 1.8V or 3.3V system rails without level shifters. |
| Operating Temp | −40°C to +105°C (Industrial Plus) - qualified for under-hood automotive ECUs and high-ambient industrial control cabinets. |
| Endurance | >10¹⁵ write cycles - eliminates wear leveling firmware, simplifies BOM by replacing FRAM/EEPROM in high-write-rate logging applications. |
| Data Retention | 20 years at +105°C - guarantees data integrity over full product lifecycle without refresh or backup power circuitry. |
| Power States | Deep Power Down (2µA), Hibernate (5µA), Standby (15µA) - enables ultra-low-power operation in battery-backed or energy-harvesting edge nodes. |
Pinout & Package
Package: 8-pin SOIC (5.2mm × 5.2mm), RoHS-compliant, lead-free, industrial-plus rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS# | Chip Select (active-low) | Enables SPI communication; must be driven low before any instruction; high puts device in standby or low-power mode. |
| WP# / IO[2] | Write Protect input / Bidirectional I/O 2 | Hardware write lock for status register when WP# = Low and SR[7] = 1; also serves as QPI data line IO[2]. |
| SI / IO[0] | Serial Input / Bidirectional I/O 0 | Command/address/data input in single SPI; bidirectional data lane in dual/quad modes; requires pull-up if unused. |
| CLK | Clock input | Synchronous timing reference; rising edge latches commands in SDR/DDR; both edges used for address/data in DDR mode. |
| IO[3] | Bidirectional I/O 3 | Quad SPI data lane; must be pulled to VCC if not used in single/dual mode to prevent floating inputs. |
| SO / IO[1] | Serial Output / Bidirectional I/O 1 | Data output in single SPI (falling-edge sampled); bidirectional lane in dual/quad modes; tri-stated when CS# = High. |
| VCC | Power supply | Single supply for core and I/O; supports 1.8V or 3.3V rails; requires local 100nF decoupling capacitor per datasheet layout guidelines. |
| VSS | Ground | Common return path for core and I/O; must be connected to system ground plane with low-inductance routing. |
Key Features
| Feature | Design Value |
|---|---|
| eXecute-In-Place (XIP) | Reduces instruction overhead by enabling continuous read/write sequences without repeated command retransmission - cuts random access latency by up to 40% vs standard SPI flash. |
| Augmented Storage Array | 256-byte user-programmable memory with per-section (32B) write protection - ideal for storing calibration coefficients, MAC addresses, or secure keys separately from main array. |
| Hardware + Software Protection | WP# pin locks status register; configuration bits (BPSEL[2:0], TBSEL) enable top/bottom block protection - prevents accidental firmware overwrite during field updates. |
| JEDEC Reset Support | Standardized reset command (66h/99h) restores default register values - ensures deterministic initialization across power cycles and firmware recovery scenarios. |
| Unique & Programmable IDs | 64-bit factory-unique ID + 64-bit user-programmable serial number - enables device traceability, secure boot binding, and production-line serialization. |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Real-time logging of sensor calibration offsets, motion profiles, and fault history in programmable logic controllers with no downtime for memory maintenance. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing instant-write, zero-latency storage for volatile runtime parameters between power cycles. Use Value: Eliminates supercapacitor backup and wear-leveling firmware, reducing bill-of-materials cost and firmware complexity while guaranteeing data persistence after unexpected shutdown. |
Use Scenario: Storing DICOM header metadata, acquisition timestamps, and image processing flags in portable ultrasound and MRI subsystems operating in thermally constrained enclosures. IC Role / Device Role / Timing Role: Persistent SRAM replacement interfacing directly to ARM Cortex-A/M cores via QSPI bus for deterministic sub-microsecond read/write access. Use Value: Maintains 20-year data integrity at 105°C ambient - critical for regulatory compliance in Class II medical devices where data loss is unacceptable. |
| Industrial Routers & Switches | Automotive ADAS Control Units |
Use Scenario: Caching routing tables, VLAN configurations, and TLS certificate fingerprints in carrier-grade Ethernet switches requiring zero-reboot firmware updates. IC Role / Device Role / Timing Role: Configuration store with hardware write protection (WP#) and JEDEC reset - ensures atomic update rollback and secure boot validation. Use Value: Enables field-upgradable firmware with guaranteed atomicity and tamper resistance, meeting IEC 62443-3-3 security requirements for industrial networks. |
Use Scenario: Logging radar fusion timestamps, camera frame sync markers, and diagnostic trouble codes (DTCs) in autonomous driving ECUs exposed to under-hood thermal stress. IC Role / Device Role / Timing Role: High-endurance MRAM acting as crash-data recorder and runtime configuration vault - survives >10¹⁵ write cycles over 15-year vehicle lifetime. Use Value: Replaces EEPROM/FRAM with higher speed, lower power, and superior temperature resilience - certified to AEC-Q100 Grade 2 (−40°C to +105°C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile serial memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress Semiconductors FM25V16-G | 16Mb F-RAM; 3.3V only; 40MHz max SPI clock; no QSPI x4 mode; 10¹⁴ endurance; 10-year retention at 85°C | Limited to 3.3V systems; lacks industrial-plus temp rating and quad interface - unsuitable for 1.8V designs or high-throughput logging | Select only for legacy 3.3V systems where lower bandwidth and reduced temperature margin are acceptable |
| Infineon Technologies CY14V108N-ZSP25XI | 8Mb nvSRAM with internal lithium battery; 25MHz parallel interface; 20-year retention; requires external battery management | Parallel interface increases PCB footprint and pin count; battery dependency adds reliability risk and RoHS compliance burden | Consider only when existing design uses parallel bus and battery-backed retention is already implemented |
Compared with FM25V16-G and CY14V108N-ZSP25XI, M30162040108X0PSAY offers higher interface speed, dual-voltage support, smaller SOIC footprint, and battery-free operation - making it optimal for new 1.8V/3.3V QSPI-based embedded systems requiring extended temperature resilience and zero-maintenance data persistence.
Availability
M30162040108X0PSAY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, and industrial routers requiring stable component supply with guaranteed long-term availability and controlled obsolescence management.
Supply support for M30162040108X0PSAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
M30162040108X0PSAY belongs to Renesas' Persistent SRAM (P-SRAM) family - engineered to replace battery-backed SRAM and legacy non-volatile memories in mission-critical applications demanding instant-write, infinite endurance, and extended temperature operation.
FAQ
What voltage ranges does the M30162040108X0PSAY support?
M30162040108X0PSAY supports two independent VCC operating ranges: 1.71V to 2.00V (1.8V nominal) and 2.70V to 3.60V (3.3V nominal). The device automatically adapts to either rail without external configuration. This dual-voltage capability allows direct integration into mixed-voltage systems and eliminates the need for level-shifting circuitry when interfacing with 1.8V microcontrollers or 3.3V FPGAs. Both ranges are fully specified across the −40°C to +105°C temperature range.
Does the M30162040108X0PSAY require a battery or capacitor for data retention?
No, M30162040108X0PSAY is a true non-volatile memory based on STT-MRAM technology and retains data indefinitely without any backup power source. Unlike nvSRAM or battery-backed SRAM, it requires no external capacitor, supercapacitor, or lithium coin cell. Data persistence is guaranteed for 20 years at +105°C and exceeds 100 years at room temperature - all without auxiliary power, making M30162040108X0PSAY ideal for maintenance-free, safety-critical, and space-constrained applications.
What is the function of the Augmented Storage Array in the M30162040108X0PSAY?
The M30162040108X0PSAY includes a dedicated 256-byte Augmented Storage Array, physically separate from the main 16Mbit memory. It is divided into eight 32-byte sections, each individually programmable and independently write-protectable via configuration registers. This area is commonly used to store immutable identifiers (e.g., MAC addresses), calibration constants, secure keys, or firmware version stamps - isolated from bulk data operations to prevent accidental corruption during field updates or high-frequency logging to the main array.
Can the M30162040108X0PSAY operate in Quad SPI mode at 108MHz?
Yes, M30162040108X0PSAY supports Quad SPI (4-4-4) operation at 108MHz in Single Data Rate (SDR) mode. In this configuration, command, address, and data are all transferred across four I/O lines (IO[3:0]), achieving a peak throughput of 432 MB/s. The device also supports Double Data Rate (DDR) mode at 54MHz for applications prioritizing bandwidth efficiency over raw speed. Both modes are fully compliant with JEDEC JESD251 standards and require no external timing components.
How does hardware write protection work on the M30162040108X0PSAY?
Hardware write protection on M30162040108X0PSAY is implemented via the WP# pin in conjunction with the Status Register bit SR[7] (WP#EN). When SR[7] = 1 and WP# is driven low, the status register becomes read-only - preventing modification of block protection bits, top/bottom selection, and serial number lock settings. This provides a physical, pin-level safeguard against accidental or malicious register writes during system operation or firmware updates, complementing software-based protection schemes for defense-in-depth security.
M30162040108X0PSAY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.209", 5.30mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 4M x 4
- Memory Interface:
- -
- Clock Frequency:
- 108 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
M30162040108X0PSAY FAQ
1.How can I place an order for M30162040108X0PSAY through Aetrix?
Please submit a Request for Quotation (RFQ) for M30162040108X0PSAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M30162040108X0PSAY reliable?
The price and inventory of M30162040108X0PSAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M30162040108X0PSAY is usually 5 days.
3.What payment methods are accepted for M30162040108X0PSAY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M30162040108X0PSAY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M30162040108X0PSAY?
M30162040108X0PSAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M30162040108X0PSAY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M30162040108X0PSAY?
For technical support, including M30162040108X0PSAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M30162040108X0PSAY requirements.
6.How does Aetrix verify that M30162040108X0PSAY is sourced from the original manufacturer or authorized distributors?
All M30162040108X0PSAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M30162040108X0PSAY meets industry standards.
7.What is the process for return or replacement of M30162040108X0PSAY?
All M30162040108X0PSAY units undergo pre-shipment inspection (PSI). If there is an issue with M30162040108X0PSAY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M30162040108X0PSAY part is unused and in its original packaging.
Return procedure for M30162040108X0PSAY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M30162040108X0PSAY Tags
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