Renesas M30162040108X0PWAY

Overview

M30162040108X0PWAY from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock speed, 1.71–2.0V or 2.7–3.6V supply range, and industrial-plus temperature rating (−40°C to +105°C). It delivers SRAM-compatible read/write timing, zero write latency, and unlimited endurance for real-time data logging in factory automation controllers.

For engineers reviewing the M30162040108X0PWAY datasheet, M30162040108X0PWAY pinout, M30162040108X0PWAY application, or M30162040108X0PWAY equivalent, this page provides verified technical context, package mapping, functional pin definitions, JEDEC-compliant reset support, and validated alternative options for persistent memory replacement in embedded systems requiring deterministic write performance and 20+ year data retention.

Technical Context

The M30162040108X0PWAY implements a 40nm pMTJ spin-transfer torque MRAM array with quad SPI (4-4-4) interface supporting both SDR (108MHz) and DDR (54MHz) modes. Its architecture includes dedicated command/address/data paths, on-die voltage regulation, and hardware/software write protection via WP# pin and configurable status register bits.

It features eXecute-In-Place (XIP) mode to eliminate per-access command overhead, a 256-byte user-programmable augmented storage array with per-section write protection, and two low-power states-Deep Power Down (IDPD) and Hibernate-with full configuration retention and sub-400µs wake-up latency.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0 mm × 6.0 mm, wettable flank, RoHS-compliant. Pin 1 marked by dot; thermal pad exposed on bottom for enhanced heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar persistent memory applications.

Compared with FM25V20A-G and CY14V108N-ZSP25XI, the M30162040108X0PWAY offers double the density, 4× higher interface speed, extended temperature range, QSPI DDR capability, and integrated augmented storage - making it the only option meeting industrial-plus, high-throughput, and secure identity requirements simultaneously.

Availability

M30162040108X0PWAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for M30162040108X0PWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M30162040108X0PWAY belongs to Renesas' Persistent SRAM (P-SRAM) family, designed specifically to replace battery-backed SRAM and NOR Flash in applications demanding instant-write non-volatility, high endurance, and seamless SPI integration.

FAQ

What is the maximum clock frequency supported by M30162040108X0PWAY in Single Data Rate mode?

The M30162040108X0PWAY supports up to 108 MHz in Single Data Rate (SDR) mode, enabling 108 MB/s sustained read throughput and deterministic sub-10 ns write latency. This specification is guaranteed across the full −40°C to +105°C operating range and both supported voltage rails (1.8 V and 3.3 V).

Does M30162040108X0PWAY require external backup capacitors or batteries for data retention?

No, the M30162040108X0PWAY is inherently non-volatile due to its STT-MRAM technology and requires no external energy storage components. Data retention exceeds 20 years at 105°C without any auxiliary power source, eliminating capacitor aging, leakage, and board-space overhead associated with nvSRAM or battery-backed SRAM solutions.

How is write protection implemented on M30162040108X0PWAY?

M30162040108X0PWAY implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables status register writes when enabled), and software-based via configurable bits in the Status Register (BP[2:0], TBSEL, SNPEN). Both mechanisms can be used independently or concurrently to safeguard main memory, augmented storage, and serial number fields.

Can M30162040108X0PWAY be used as direct replacement for standard SPI NOR Flash in existing designs?

Yes, the M30162040108X0PWAY uses JEDEC-standard SPI commands (including Read, Page Program, Erase, and Reset) and shares identical pinout and timing envelopes with industry-standard 8-pin SOIC and WSON SPI memories. No PCB changes are required, though firmware should disable erase commands since MRAM does not require them.

What is the purpose of the Augmented Storage Array in M30162040108X0PWAY?

The 256-byte Augmented Storage Array in M30162040108X0PWAY is a separate, user-programmable memory region divided into eight 32-byte sections. Each section can be individually write-protected, making it ideal for storing cryptographic keys, calibration coefficients, or device-specific identifiers that must remain immutable after programming - independent of main array operations.