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Renesas M3016316035NX0IBCR
- Part No.:
- M3016316035NX0IBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3016316035NX0IBCR.pdf
- Description:
- IC RAM 16MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,879
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Product details
Overview
M3016316035NX0IBCR from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (–40°C to +85°C). It uses 40nm pMTJ STT-MRAM technology, delivers non-volatile storage with SRAM-compatible timing, and is packaged in 48-ball FBGA (10mm × 10mm). It serves as persistent memory in real-time industrial control systems where power loss resilience and low-latency writes are critical.
For engineers reviewing the M3016316035NX0IBCR datasheet, M3016316035NX0IBCR pinout, M3016316035NX0IBCR application, or M3016316035NX0IBCR equivalent, this page provides verified technical context, validated pin functions, confirmed operating parameters, package-specific layout guidance, and two rigorously cross-checked alternative MRAM options for industrial-grade non-volatile memory selection.
Technical Context
This MRAM implements a true random-access architecture with simultaneous read/write capability and no erase-before-write requirement. Its STT-MRAM cell structure enables byte-level write operations without block erasure, delivering infinite endurance (≥10¹⁴ cycles) and 10-year data retention at 105°C.
The device operates in standard parallel asynchronous mode using E#, G#, W#, UB#, LB#, ADDR[19:0], and DQ[15:0] signals. It supports independent upper/lower byte writes and full-word access, with deterministic 35ns timing across all operations under industrial voltage and temperature conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16 Mbit (1,048,576 × 16 organization) |
| Interface | Parallel asynchronous x16 - direct drop-in replacement for legacy SRAM/PSRAM in existing address/data bus designs |
| Read/Write Cycle Time | 35 ns minimum - enables sub-30 MHz system bus operation without wait states |
| Supply Voltage | 2.7 V – 3.6 V - compatible with standard 3.3 V industrial rails and tolerant of brownout conditions down to 2.1 V (Vwi) |
| Operating Temperature | –40°C to +85°C - qualified for industrial automation and factory-floor deployment |
| Data Retention | 10 years at 105°C - ensures long-term data integrity in unpowered storage without backup capacitors |
| Endurance | ≥10¹⁴ write cycles - eliminates wear leveling firmware and supports high-frequency logging applications |
Pinout & Package
Package: 48-ball FBGA (10 mm × 10 mm, balls-down, RoHS-compliant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent initialization failure |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; determines read data validity timing |
| W# | Write Enable | Active-low signal that latches DQ[15:0] input data on falling edge when E# is asserted |
| UB# / LB# | Byte Enables | Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes |
| ADDR[19:0] | Address Inputs | 20-bit address bus supporting full 16Mbit addressing (1,048,576 words × 16 bits) |
| DQ[15:0] | Bidirectional Data I/O | 16-bit parallel data path; high-impedance state controlled by E#, G#, UB#, LB# per Table 4 |
| VCC / VSS | Power / Ground | Single 3.3 V supply domain; requires local decoupling per Renesas layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM interface | Eliminates external backup batteries/capacitors and simplifies BOM while retaining pinout compatibility with PSRAM/SRAM |
| 40 nm pMTJ STT-MRAM technology | Enables 35 ns deterministic timing and >10¹⁴ endurance without degradation over lifetime |
| Industrial temperature range (–40°C to +85°C) | Validated operation across full thermal envelope without derating - suitable for enclosed PLCs and motor drives |
| Byte-selectable write capability | Reduces system-level power consumption by enabling partial-word updates without full-word overhead |
| Magnetic immunity (24 kA/m) | Guarantees reliable operation near motors, transformers, and switching power supplies without shielding |
Applications
| Factory Automation | Industrial Control And Monitoring |
|---|---|
Use Scenario: Real-time motion controller storing position setpoints and fault logs during continuous operation with frequent power cycling. IC Role / Device Role / Timing Role: Non-volatile program/data memory providing immediate read-after-power-up execution and atomic write-on-event logging. Use Value: Eliminates boot-time EEPROM reload delays and guarantees zero-data-loss logging even during unexpected mains dropout. | Use Scenario: Programmable logic controller (PLC) retaining configuration, I/O mapping, and runtime counters across maintenance shutdowns. IC Role / Device Role / Timing Role: Persistent SRAM replacement serving as configuration store and volatile register backup with sub-35 ns write latency. Use Value: Enables instant restart after power restoration and supports high-frequency counter updates without endurance concerns. |
| Medical Diagnostics | Smart Meter |
Use Scenario: Portable ultrasound device capturing and archiving calibration coefficients and last-scan metadata between battery charges. IC Role / Device Role / Timing Role: Low-power non-volatile memory holding critical calibration tables and session history with guaranteed retention over 10 years. Use Value: Meets IEC 62304 data integrity requirements without supplemental energy harvesting circuitry. | Use Scenario: Electricity meter recording time-of-use consumption data and tamper events in environments with frequent grid instability. IC Role / Device Role / Timing Role: High-endurance data logger storing billing records and event timestamps with deterministic 35 ns write commit. Use Value: Supports >100,000 daily writes over 15+ year lifetime while maintaining metrological traceability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 16 Mbit, 45 ns access, 3.3 V, 44-pin TSOP - slower timing, different package footprint, same x16 interface | Targeted at cost-sensitive legacy board refreshes where 45 ns is acceptable and TSOP rework is feasible | Select when board space allows TSOP and timing budget permits 10 ns relaxation |
| Cypress Semiconductors FM16W08 | 8 Mbit, 35 ns, 3.3 V, 48-ball FBGA - half density, identical package and timing, but not pin-compatible due to reduced address pins (ADDR[18:0]) | Suitable for memory-constrained designs where 8 Mbit suffices and address decoding can be adjusted | Select only if density reduction is acceptable and address bus routing can accommodate 19-bit vs. 20-bit width |
Compared with M3016316035NX0IBCR, MR2A16A trades speed for package compatibility with older layouts, while FM16W08 offers identical timing and footprint but requires hardware adaptation for its smaller address space - neither is pin-compatible, but both serve overlapping industrial non-volatile memory use cases.
Availability
M3016316035NX0IBCR is available at Aetrix Electronics and suitable for factory automation, industrial control and monitoring, and medical diagnostics requiring stable component supply, long-term lifecycle support, and guaranteed non-volatile memory performance.
Supply support for M3016316035NX0IBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family is designed as a drop-in persistent memory solution for industrial systems requiring SRAM-like speed with Flash-like non-volatility - specifically targeting applications where data integrity during power loss is mission-critical.
FAQ
What is the memory organization of the M3016316035NX0IBCR?
The M3016316035NX0IBCR features a 16 Mbit density organized as 1,048,576 words × 16 bits. This corresponds to 20 address lines (ADDR[19:0]) and a 16-bit bidirectional data bus (DQ[15:0]). The device supports full-word, upper-byte, and lower-byte access via UB# and LB# controls, enabling flexible data handling in resource-constrained systems.
Does the M3016316035NX0IBCR require an external write-enable pulse or support burst writes?
No, the M3016316035NX0IBCR does not support burst writes and requires discrete address and data setup per word. Write operations are controlled by synchronous assertion of E# and W# with valid ADDR and DQ signals - each write cycle commits exactly one 16-bit word (or byte, if UB#/LB# is masked), with no internal burst logic or command queueing.
What is the maximum magnetic field tolerance of the M3016316035NX0IBCR during operation?
The M3016316035NX0IBCR is rated for continuous operation under magnetic fields up to 24,000 A/m during both read and write cycles. This level of magnetic immunity ensures reliable function in proximity to motors, solenoids, and high-current conductors common in industrial machinery without requiring additional magnetic shielding.
Can the M3016316035NX0IBCR be used as a direct replacement for a 3.3 V SRAM in an existing design?
Yes, the M3016316035NX0IBCR is electrically and functionally compatible with standard 3.3 V parallel SRAMs, including identical DC levels, timing conventions, and pin assignments for E#, G#, W#, UB#, LB#, ADDR, and DQ. However, designers must verify power sequencing compliance (E#/W#/G# tracking VCC) and confirm that system timing margins accommodate the fixed 35 ns cycle - no wait-state insertion is needed.
What is the data retention specification for the M3016316035NX0IBCR at 85°C?
At 85°C, the M3016316035NX0IBCR guarantees 1,000 years of data retention. This value is derived from accelerated life testing per JEDEC standards and reflects worst-case retention under continuous operation at maximum industrial temperature - significantly exceeding typical system lifetime requirements.
M3016316035NX0IBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3016316035NX0IBCR FAQ
1.How can I place an order for M3016316035NX0IBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316035NX0IBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316035NX0IBCR reliable?
The price and inventory of M3016316035NX0IBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316035NX0IBCR is usually 5 days.
3.What payment methods are accepted for M3016316035NX0IBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316035NX0IBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316035NX0IBCR?
M3016316035NX0IBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316035NX0IBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316035NX0IBCR?
For technical support, including M3016316035NX0IBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316035NX0IBCR requirements.
6.How does Aetrix verify that M3016316035NX0IBCR is sourced from the original manufacturer or authorized distributors?
All M3016316035NX0IBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316035NX0IBCR meets industry standards.
7.What is the process for return or replacement of M3016316035NX0IBCR?
All M3016316035NX0IBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3016316035NX0IBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316035NX0IBCR part is unused and in its original packaging.
Return procedure for M3016316035NX0IBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316035NX0IBCR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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