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Renesas M3016316035NX0IBCY
- Part No.:
- M3016316035NX0IBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
M3016316035NX0IBCY.pdf
- Description:
- IC RAM 16MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:122
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Product details
Overview
M3016316035NX0IBCY from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply voltage, and industrial temperature range (–40°C to +85°C). It delivers persistent SRAM-like performance with non-volatility, used in real-time data logging and control state retention for factory automation systems.
For engineers reviewing the M3016316035NX0IBCY datasheet, M3016316035NX0IBCY pinout, M3016316035NX0IBCY application, or M3016316035NX0IBCY equivalent, this page provides verified technical context, package mapping, timing behavior, endurance metrics, and validated alternative options for industrial embedded memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its parallel x16 interface operates asynchronously with separate chip enable (E#), output enable (G#), and write enable (W#) controls, supporting byte-selectable writes via UB#/LB#.
The device implements a full SRAM-compatible command protocol: read requires E# and G# low with W# high; write requires E# and W# low with G# high. Address decoding scales across densities-16Mbit uses ADDR[19:0] (20 pins)-and all operations maintain data integrity under magnetic fields up to 24,000 A/m during read or write.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16 organization) - supports 2MB of byte-addressable non-volatile storage |
| Access Time | 35 ns read/write cycle - enables direct replacement of fast SRAM in legacy bus interfaces without timing redesign |
| Supply Voltage | 2.7 V – 3.6 V - compatible with standard 3.3V industrial logic rails and tolerant of brownout conditions down to 2.1V (Vwi) |
| Data Retention | 10 years at 105°C - guarantees long-term data integrity in unpowered storage for medical diagnostics and smart metering |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling firmware overhead required by NAND/EEPROM in high-write-rate applications |
| Operating Temp | –40°C to +85°C (industrial grade) - qualified for continuous operation in PLCs, motor drives, and industrial gateways |
| Interface | Parallel asynchronous x16 - no clock, no command queue, no initialization sequence; drop-in compatible with legacy SRAM footprints |
Pinout & Package
Package: 54-pin TSOP (10 mm × 22 mm), RoHS-compliant, industrial-grade plastic body with exposed pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must follow VCC during power-up/down to prevent undefined state or data corruption |
| G# | Output Enable | Active-low control for DQ[15:0] bus drivers; determines read data output timing (tGLQV = 15–25 ns) |
| W# | Write Enable | Active-low write strobe; combined with E# to initiate write; high during read to enable output drivers |
| UB# / LB# | Byte Enables | Independent upper/lower byte gating for x16 bus; allows 8-bit writes without masking or extra logic |
| ADDR[19:0] | Address Inputs | 20-bit address bus for 16Mbit density; supports full random access without row/column addressing overhead |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with Hi-Z control; supports simultaneous read/write on separate bytes using UB#/LB# |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; max standby current 2.5 mA (industrial temp); pin 1 VSS must be held low per spec |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | SRAM-compatible timing (35ns R/W) with inherent non-volatility - eliminates backup battery or capacitor circuitry |
| Unlimited write endurance | 10¹⁴ write cycles - supports continuous logging at 1 kHz for >3,000 years without degradation |
| Magnetic field immunity | Withstands 24,000 A/m during read/write - suitable for deployment near motors, transformers, and MRI equipment |
| Industrial temperature support | –40°C to +85°C operation with guaranteed 10-year data retention at 85°C - meets EN 60068-2 environmental stress standards |
| Low-power active operation | 12 mA typical read current, 20 mA typical write current - reduces thermal load in dense PCB layouts |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing axis position history and fault logs between power cycles. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding last-known safe state and calibration offsets with sub-40ns write latency. Use Value: Eliminates boot-time re-homing and enables deterministic restart after unexpected power loss. |
Use Scenario: Portable ultrasound unit capturing frame buffers and patient session metadata during battery-powered operation. IC Role / Device Role / Timing Role: High-reliability data buffer retaining image snapshots and diagnostic timestamps without volatile DRAM refresh or EEPROM wear-out. Use Value: Ensures HIPAA-compliant audit trail persistence even during rapid power cycling or battery swaps. |
| Smart Metering | Industrial Networking |
Use Scenario: Electricity meter recording consumption intervals and tamper events in harsh outdoor enclosures. IC Role / Device Role / Timing Role: Endurance-critical storage for time-stamped kWh readings and firmware update staging with 10-year retention at 85°C. Use Value: Meets ANSI C12.1 and IEC 62056 requirements for 10+ year unattended operation without data loss. |
Use Scenario: Industrial Ethernet switch storing port configuration, MAC tables, and firmware rollback images. IC Role / Device Role / Timing Role: Fast-access configuration store enabling sub-second failover and zero-downtime firmware updates. Use Value: Reduces network recovery time from minutes to milliseconds after power interruption or reset. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B108L-BAI | 8Mbit density, 45ns access, SOIC-44 package, 3.3V only; lower endurance (10¹² cycles) | Limited to lower-density designs; lacks 16Mbit capacity and 35ns speed needed for high-throughput logging | Select only if board space constraints require SOIC-44 and 8Mbit suffices; verify timing margin for 45ns vs. 35ns critical paths |
| AS16C1608-35N | 16Mbit, 35ns, 48-ball FBGA, same voltage/temp range; uses toggle-mode interface instead of true asynchronous | Requires minor firmware adaptation for write-enable sequencing; incompatible with legacy SRAM glue logic | Choose when migrating to smaller FBGA footprint and can modify control logic; avoid for drop-in SRAM replacements |
Compared with CY14B108L-BAI and AS16C1608-35N, M3016316035NX0IBCY uniquely combines 16Mbit density, 35ns timing, true asynchronous operation, and 10¹⁴ endurance in a 54-pin TSOP-making it the only option that satisfies all four criteria for retrofitting legacy industrial controllers without layout or firmware changes.
Availability
M3016316035NX0IBCY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering requiring stable component supply across extended product lifecycles and temperature extremes.
Supply support for M3016316035NX0IBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3016316035NX0IBCY belongs to the M3xxx316 parallel MRAM family, designed specifically to replace battery-backed SRAM and legacy EEPROM/Flash in high-reliability industrial systems demanding instant-write non-volatility and infinite endurance.
FAQ
What is the memory organization of M3016316035NX0IBCY?
M3016316035NX0IBCY has a 1,048,576 × 16 memory array organization, delivering 16 megabits (2 megabytes) of x16 parallel-access storage. This structure maps directly to 20-bit address lines (ADDR[19:0]), enabling full random access without bank or page constraints. The device supports byte-selectable writes via UB# and LB# signals, preserving compatibility with existing 16-bit data bus architectures.
Does M3016316035NX0IBCY require a power-on initialization sequence?
No, M3016316035NX0IBCY does not require software initialization. However, hardware-level power sequencing is mandatory: E#, W#, and G# must track VCC during both power-up and power-down transitions. The device becomes fully operational within 1 ms after VCC exceeds 2.7 V, and read/write operations are inhibited if VCC drops below 2.1 V (Vwi) during brownout conditions.
Can M3016316035NX0IBCY replace standard SRAM in an existing design?
Yes, M3016316035NX0IBCY is designed as a pin- and timing-compatible replacement for 16Mbit asynchronous SRAMs. It matches 35ns access timing, uses identical control signals (E#, G#, W#, UB#, LB#), and requires no external components like batteries or capacitors. No firmware or PCB changes are needed beyond verifying VCC stability and ensuring VSS pin 1 is held low.
What is the maximum magnetic field strength M3016316035NX0IBCY can withstand during operation?
M3016316035NX0IBCY is rated for continuous operation under magnetic fields up to 24,000 A/m during both read and write cycles. This specification is validated per internal magnetic immunity testing and ensures reliable function in proximity to motors, solenoids, transformers, and other high-field industrial equipment without data corruption or timing disruption.
How does the endurance of M3016316035NX0IBCY compare to Flash or EEPROM?
M3016316035NX0IBCY offers 10¹⁴ write cycles-100× greater than typical NOR Flash (10⁶) and 10,000× greater than standard EEPROM (10¹⁰). Unlike Flash, it requires no block erase, supports true byte-level writes, and exhibits no write latency penalty. This makes M3016316035NX0IBCY ideal for applications with frequent small-data updates, such as real-time sensor logging or configuration tracking.
M3016316035NX0IBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (10x10)
M3016316035NX0IBCY FAQ
1.How can I place an order for M3016316035NX0IBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316035NX0IBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316035NX0IBCY reliable?
The price and inventory of M3016316035NX0IBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316035NX0IBCY is usually 5 days.
3.What payment methods are accepted for M3016316035NX0IBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316035NX0IBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316035NX0IBCY?
M3016316035NX0IBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316035NX0IBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316035NX0IBCY?
For technical support, including M3016316035NX0IBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316035NX0IBCY requirements.
6.How does Aetrix verify that M3016316035NX0IBCY is sourced from the original manufacturer or authorized distributors?
All M3016316035NX0IBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316035NX0IBCY meets industry standards.
7.What is the process for return or replacement of M3016316035NX0IBCY?
All M3016316035NX0IBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3016316035NX0IBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316035NX0IBCY part is unused and in its original packaging.
Return procedure for M3016316035NX0IBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316035NX0IBCY Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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