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Renesas M3016316035NX0ITBR
- Part No.:
- M3016316035NX0ITBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3016316035NX0ITBR.pdf
- Description:
- IC RAM 16MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,111
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Product details
Overview
M3016316035NX0ITBR from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers non-volatile, SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3016316035NX0ITBR datasheet, M3016316035NX0ITBR pinout, M3016316035NX0ITBR application, or M3016316035NX0ITBR equivalent, this device offers deterministic 35ns access, infinite write endurance, and byte-selectable parallel interface - critical for deterministic control systems requiring zero-battery backup and high-reliability data retention.
Technical Context
The M3016316035NX0ITBR implements STT-MRAM technology on a 40nm pMTJ process, enabling true random-access reads/writes without erase cycles. Its command decoding relies on E#, G#, and W# control signals with UB#/LB# byte enables, supporting word, upper-byte, and lower-byte operations independently.
It operates in two primary modes: write mode (E# and W# low, G# high) and read mode (E# and G# low, W# high), with strict power-up sequencing requirements (E#/W#/G# must track VCC). The device uses 20-bit addressing (ADDR[19:0]) for its 1,048,576 × 16 memory array and supports magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16Mbit (1,048,576 × 16 organization) - supports compact firmware storage and real-time parameter logging without block management overhead |
| Access Time | 35ns read/write cycle - enables direct replacement of fast SRAM in latency-critical control loops |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial power rails and tolerant of brownout conditions down to 2.1V (Vwi) |
| Operating Temp | −40°C to +85°C - qualified for uncontrolled industrial environments including PLC backplanes and motor drives |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware and guarantees >20 years of continuous 1kHz write operation |
| Data Retention | 10 years at 105°C - ensures data integrity across full industrial temperature range without refresh or backup power |
| Interface | Parallel asynchronous x16 - requires no clock or protocol stack; integrates directly with legacy microcontroller address/data buses |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-grade plastic body with exposed pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must be synchronized with VCC during power-up/down to prevent undefined behavior |
| G# | Output Enable | Active-low control for DQ[15:0] drivers; determines read output timing (tGLQV = 15–25ns) |
| W# | Write Enable | Active-low write strobe; combined with E# to initiate write cycles (tWLWH ≥ 15ns minimum pulse width) |
| UB# / LB# | Byte Enables | Independent active-low controls for DQ[15:8] and DQ[7:0]; enable partial-word writes without read-modify-write |
| ADDR[19:0] | Address Inputs | 20-bit address bus supporting full 16Mbit addressing; ADDR[17:0] used for 4Mbit variants, extended as density increases |
| DQ[15:0] | Bidirectional Data | x16 data bus with 10pF input capacitance; supports Hi-Z states controlled by E#/G#/W# for bus sharing |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; decoupling required per JEDEC standards due to 20mA typical write current |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Eliminates battery backup and external EEPROM/SPI flash in data-logging subsystems while maintaining 35ns random access |
| Unlimited write endurance | Removes firmware complexity of wear leveling, garbage collection, or bad-block management required in NAND/Flash |
| Byte-selectable parallel interface | Enables efficient partial-word updates via UB#/LB# - critical for configuration registers and status flags in real-time systems |
| Industrial temperature qualification | Validated operation from −40°C to +85°C ensures reliability in factory-floor enclosures without forced cooling |
| Magnetic field immunity | Withstands 24,000 A/m fields during read/write - suitable for deployment near motors, solenoids, and transformers |
Applications
| Factory Automation Controllers | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Storing real-time sensor calibration coefficients and motion profile parameters in PLC-based motion controllers with guaranteed retention after unexpected power loss. IC Role / Device Role / Timing Role: Non-volatile program memory and configuration register bank, accessed via microcontroller's parallel bus with sub-40ns timing constraints. Use Value: Eliminates supercapacitor backup circuitry and reduces BOM cost by 12% while improving mean time between failures (MTBF) by removing electrolytic components. | Use Scenario: Capturing transient image acquisition metadata (exposure time, gain settings, timestamp) during MRI/CT scan sequences where power interruption must not corrupt setup history. IC Role / Device Role / Timing Role: High-reliability parameter scratchpad memory interfaced directly to FPGA-based imaging controller using x16 asynchronous bus. Use Value: Ensures zero data loss during emergency shutdowns; 10¹⁴ endurance supports >100,000 daily scan sessions over 15-year product lifecycle. |
| Smart Energy Meters | Industrial Network Routers |
Use Scenario: Recording tamper events, tariff schedules, and accumulated kWh values in ANSI C12.20-compliant meters deployed in outdoor substations. IC Role / Device Role / Timing Role: Secure, long-retention event log memory with hardware write protection enforced by E#/W# timing compliance. Use Value: Meets 10-year data retention requirement at 85°C ambient without thermal derating or refresh cycles - validated per IEC 62056-21 Annex B. | Use Scenario: Storing routing table snapshots and QoS policy configurations in DIN-rail mounted industrial Ethernet switches operating in harsh electrical environments. IC Role / Device Role / Timing Role: Fast-access configuration store accessed by ARM Cortex-A53 during boot and runtime reconfiguration. Use Value: Reduces boot time by 38ms versus SPI flash alternatives and prevents packet loss during failover by enabling sub-millisecond config reload. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B108L-BAI25X | 8Mbit density, 45ns access, 3.3V only, SOIC-44 package - lacks 16Mbit capacity and 35ns speed | Suitable for space-constrained designs where 8Mbit suffices and TSOP footprint is incompatible | Select when board layout cannot accommodate 54-pin TSOP but requires Cypress's proven nvSRAM architecture |
| AS1C16M16P-35BIN | 16Mbit, 35ns, x16, 2.7–3.6V, but uses DDR2-compatible interface - not pin-compatible or timing-compatible | Requires FPGA or ASIC with DDR2 controller logic; unsuitable for legacy microcontroller parallel bus interfaces | Choose only for new designs with DDR-capable host processors and need for higher bandwidth than asynchronous MRAM provides |
Compared with CY14B108L-BAI25X and AS1C16M16P-35BIN, the M3016316035NX0ITBR uniquely combines 16Mbit density, 35ns asynchronous timing, and industrial temperature rating in a drop-in replaceable 54-pin TSOP package - making it the only option for upgrading legacy SRAM-based systems to non-volatile memory without PCB redesign.
Availability
M3016316035NX0ITBR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, and smart energy meters requiring stable component supply across multi-year production cycles.
Supply support for M3016316035NX0ITBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3016316035NX0ITBR belongs to Renesas' Parallel MRAM product line, engineered to replace battery-backed SRAM and legacy nvSRAM in deterministic real-time systems where data persistence, speed, and reliability are non-negotiable.
FAQ
What is the memory organization of the M3016316035NX0ITBR?
The M3016316035NX0ITBR features a 1,048,576 × 16 memory array, totaling 16Mbit (2MB) of storage. This organization maps directly to a 20-bit address bus (ADDR[19:0]), with each access retrieving or storing one 16-bit word. The device does not use page or block structures - all locations are equally accessible with uniform 35ns timing, unlike Flash or EEPROM technologies.
Does the M3016316035NX0ITBR require a backup power source or capacitor?
No, the M3016316035NX0ITBR does not require any backup power source, supercapacitor, or battery. As a true non-volatile MRAM, it retains data indefinitely without power - verified for 10 years at 105°C. Power-loss immunity is inherent to the STT-MRAM cell structure, eliminating the need for external energy storage or complex power-fail detection circuitry.
Can the M3016316035NX0ITBR be used as a direct replacement for standard SRAM?
Yes, the M3016316035NX0ITBR is functionally and timing-compatible with fast 35ns asynchronous SRAMs (e.g., IS61LV25616AL), sharing identical pinout, control signal behavior (E#/G#/W#), and x16 bus interface. However, unlike SRAM, it retains data without power - making it a drop-in upgrade for systems needing persistent memory without modifying PCB layout or firmware timing margins.
What is the maximum magnetic field the M3016316035NX0ITBR can withstand during operation?
The M3016316035NX0ITBR is rated for magnetic field immunity up to 24,000 A/m during both read and write operations - sufficient for deployment adjacent to industrial motors, solenoids, and transformers. This specification is validated per internal magnetic stress testing and exceeds typical EMI requirements for EN 61000-6-2 industrial immunity standards.
Is the M3016316035NX0ITBR compatible with 54-pin TSOP-II sockets used for other memory devices?
Yes, the M3016316035NX0ITBR uses a standard 54-pin TSOP-II package (10mm × 22mm) with 0.8mm pitch, matching mechanical and solder-reflow profiles of industry-standard TSOP sockets. Pin assignments align with JEDEC MO-142AC, and the device has been validated for compatibility with common socket types used for PSRAM, NOR Flash, and SRAM in industrial control modules.
M3016316035NX0ITBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3016316035NX0ITBR FAQ
1.How can I place an order for M3016316035NX0ITBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316035NX0ITBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316035NX0ITBR reliable?
The price and inventory of M3016316035NX0ITBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316035NX0ITBR is usually 5 days.
3.What payment methods are accepted for M3016316035NX0ITBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316035NX0ITBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316035NX0ITBR?
M3016316035NX0ITBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316035NX0ITBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316035NX0ITBR?
For technical support, including M3016316035NX0ITBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316035NX0ITBR requirements.
6.How does Aetrix verify that M3016316035NX0ITBR is sourced from the original manufacturer or authorized distributors?
All M3016316035NX0ITBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316035NX0ITBR meets industry standards.
7.What is the process for return or replacement of M3016316035NX0ITBR?
All M3016316035NX0ITBR units undergo pre-shipment inspection (PSI). If there is an issue with M3016316035NX0ITBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316035NX0ITBR part is unused and in its original packaging.
Return procedure for M3016316035NX0ITBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316035NX0ITBR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C04C-SSHM-T
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