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Renesas M3016316035NX0ITBY
- Part No.:
- M3016316035NX0ITBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3016316035NX0ITBY.pdf
- Description:
- IC RAM 16MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,183
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Product details
Overview
M3016316035NX0ITBY from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers persistent SRAM-like performance with non-volatility, enabling instant-on data retention in factory automation controllers and medical diagnostics systems.
For engineers reviewing the M3016316035NX0ITBY datasheet, M3016316035NX0ITBY pinout, M3016316035NX0ITBY application, or M3016316035NX0ITBY equivalent, this device serves as a drop-in replacement for legacy PSRAM and low-end NOR Flash in latency-critical, high-endurance embedded memory subsystems requiring guaranteed data retention without backup power.
Technical Context
The M3016316035NX0ITBY implements STT-MRAM (spin-transfer torque) technology on a 40nm pMTJ process, delivering true random-access reads/writes with no erase cycles. Its command interface uses E#, G#, and W# control lines with UB#/LB# byte enables to manage 16-bit bidirectional DQ[15:0] I/Os.
It supports full-word, upper-byte, and lower-byte write operations with deterministic 35ns timing across all modes. Internal row/column decoding and sense amplifier architecture enable zero-latency access after address stabilization, with magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16 organization) |
| Access Time | 35 ns read/write cycle - enables direct substitution for 35ns PSRAM in real-time control buffers |
| Supply Voltage | 2.7 V – 3.6 V - compatible with standard 3.3V industrial logic rails without level-shifting |
| Operating Temp | −40°C to +85°C - qualified for uncontrolled industrial environments including PLC backplanes |
| Data Retention | 1,000 years at 85°C - eliminates need for battery-backed SRAM or capacitor hold-up circuits |
| Endurance | 10¹⁴ write cycles - supports continuous logging in data routers without wear-out concerns |
| Interface | Parallel asynchronous x16 - matches legacy SRAM timing and pinout for seamless PCB reuse |
Pinout & Package
Package: 54-pin TSOP (10 mm × 22 mm), RoHS-compliant, industrial-grade plastic body with exposed pad not required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable - must be stable before address/data setup; controls standby current (1.5–2.5 mA) |
| G# | Output Enable | Active-low output driver control - sets DQ[15:0] to Hi-Z when high; enables read word/byte selection |
| W# | Write Enable | Active-low write strobe - low = write mode; high = read mode; determines direction of DQ bus |
| UB# / LB# | Byte Enables | Independent upper/lower byte gating - allows 8-bit writes without disturbing adjacent bytes |
| ADDR[19:0] | Address Inputs | 20-bit address bus - selects one of 1,048,576 words; ADDR[19] is MSB for 16Mbit density |
| DQ[15:0] | Bidirectional Data | 16-bit I/O bus - carries write data when W# low, outputs read data when G# low and W# high |
| VCC / VSS | Power/Ground | Single 3.3V supply domain - decoupling required per JEDEC standards; VSS pin 1 must be held < VIL |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) compatibility | 35ns read/write timing identical to fast SRAM - enables direct replacement without timing margin revalidation |
| STT-MRAM technology | 40nm pMTJ cell structure - provides infinite endurance and 10¹⁴-cycle reliability without degradation |
| Non-volatile data retention | 1,000 years at 85°C - retains configuration and runtime logs through power loss, thermal cycling, and system resets |
| Industrial temperature support | −40°C to +85°C operation - validated across full range with no derating; meets EN 60068-2 environmental stress tests |
| Low-power active operation | 12 mA typical read current, 20 mA typical write current - reduces thermal load in dense memory modules |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion control in CNC machines where position history and fault logs must survive instantaneous power loss. IC Role / Device Role / Timing Role: Non-volatile frame buffer and event logger - stores encoder timestamps and servo error codes with sub-microsecond write latency. Use Value: Eliminates supercapacitor backup circuitry while guaranteeing deterministic 35ns write completion for safety-critical axis recovery sequences. |
Use Scenario: Portable ultrasound imaging devices requiring immediate image reconstruction upon boot without loading from slow NAND. IC Role / Device Role / Timing Role: Boot-time configuration store and DICOM metadata cache - holds calibration coefficients and patient ID tags across cold starts. Use Value: Reduces boot time by 300 ms versus NAND+RAM combo; retains integrity during battery swaps and ESD events. |
| Industrial Routers | Smart Meters |
Use Scenario: Carrier-grade Ethernet switches performing packet buffering and forwarding table updates under sustained traffic load. IC Role / Device Role / Timing Role: High-speed forwarding table storage - supports concurrent read-modify-write of MAC entries with atomic 35ns update. Use Value: Sustains 100% line-rate throughput during firmware upgrades; avoids packet loss during failover due to zero-erase latency. |
Use Scenario: ANSI C12.22-compliant electricity meters logging consumption every 15 minutes across 10-year field deployment. IC Role / Device Role / Timing Role: Tamper-resistant energy log storage - writes timestamped kWh deltas with guaranteed retention at 70°C ambient. Use Value: Meets ANSI 12.22 data retention requirement without external EEPROM; withstands 10¹⁴ metering cycles over product lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14V101QS | 1Mbit density, 45ns access, 54-pin TSOP, same VCC range but only 1Mbit capacity | Limited to smaller configuration tables; insufficient for full firmware overlay or large log buffers | Select when board space is constrained and memory footprint ≤1Mbit suffices |
| Infineon Q803216035N | 16Mbit, 35ns, 48-ball FBGA only - no TSOP option; higher thermal resistance (θJA = 43.98°C/W) | Requires PCB redesign for FBGA; unsuitable for legacy TSOP footprints or height-constrained modules | Choose only if FBGA layout already exists and thermal management accommodates higher junction rise |
Compared with CY14V101QS and Q803216035N, the M3016316035NX0ITBY uniquely combines 16Mbit density, 35ns speed, and 54-pin TSOP packaging - enabling direct upgrade paths from 8Mbit PSRAM without layout changes or thermal redesign.
Availability
M3016316035NX0ITBY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial networking applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.
Supply support for M3016316035NX0ITBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3016316035NX0ITBY belongs to Renesas' Parallel MRAM family, designed specifically to replace battery-backed SRAM and low-density NOR Flash in mission-critical embedded systems demanding instant non-volatility and unlimited endurance.
FAQ
What is the memory organization of the M3016316035NX0ITBY?
The M3016316035NX0ITBY features a 16Mbit density organized as 1,048,576 words × 16 bits. This corresponds to 20 address lines (ADDR[19:0]), supporting full-word, upper-byte (DQ[15:8]), and lower-byte (DQ[7:0]) access via UB# and LB# controls. The 54-pin TSOP package maps all signals per Renesas' standard pinout for x16 parallel MRAM devices.
Does the M3016316035NX0ITBY require a write-enable pulse sequence or support burst writes?
The M3016316035NX0ITBY does not support burst writes. It operates strictly in asynchronous mode using discrete E#, W#, and G# strobes. A valid write requires E# and W# both low with stable address and data present; timing parameters such as tWLWH (15–25 ns) and tDVWH (10–15 ns) define minimum pulse widths and setup/hold requirements. No internal command queue or burst capability is implemented.
What is the maximum magnetic field tolerance for the M3016316035NX0ITBY during operation?
The M3016316035NX0ITBY maintains functional integrity under magnetic fields up to 24,000 A/m during both read and write operations, as specified in Table 9 and Table 11 of its datasheet. This immunity level exceeds typical industrial motor drive and transformer leakage fields, ensuring reliable operation in high-noise factory environments without shielding.
Can the M3016316035NX0ITBY be used as a direct replacement for standard SRAM in existing designs?
Yes - the M3016316035NX0ITBY is pin-compatible and timing-compatible with 35ns x16 parallel SRAMs (e.g., IS61LV25616AL), requiring no PCB changes. Its E#/G#/W# control scheme matches standard SRAM protocols, and it drives DQ[15:0] with compatible voltage levels (VOH ≥ VCC−0.5V, VOL ≤ 0.4V). However, write endurance and data retention are superior, eliminating need for external backup.
What is the standby current specification for the M3016316035NX0ITBY at 85°C?
At 85°C and VCC = 3.6V, the M3016316035NX0ITBY exhibits a standby current (ISB) of 1.5–2.5 mA, as specified in Table 8 for industrial temperature grade. This value is measured with E# high, and applies across the full 4Mb–16Mb density range. At 105°C (industrial plus), standby current increases to 1.7–3.5 mA.
M3016316035NX0ITBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3016316035NX0ITBY FAQ
1.How can I place an order for M3016316035NX0ITBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316035NX0ITBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316035NX0ITBY reliable?
The price and inventory of M3016316035NX0ITBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316035NX0ITBY is usually 5 days.
3.What payment methods are accepted for M3016316035NX0ITBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316035NX0ITBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316035NX0ITBY?
M3016316035NX0ITBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316035NX0ITBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316035NX0ITBY?
For technical support, including M3016316035NX0ITBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316035NX0ITBY requirements.
6.How does Aetrix verify that M3016316035NX0ITBY is sourced from the original manufacturer or authorized distributors?
All M3016316035NX0ITBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316035NX0ITBY meets industry standards.
7.What is the process for return or replacement of M3016316035NX0ITBY?
All M3016316035NX0ITBY units undergo pre-shipment inspection (PSI). If there is an issue with M3016316035NX0ITBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316035NX0ITBY part is unused and in its original packaging.
Return procedure for M3016316035NX0ITBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316035NX0ITBY Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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