My Inquiry
My Account
Renesas M3016316035NX0PBCR
- Part No.:
- M3016316035NX0PBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3016316035NX0PBCR.pdf
- Description:
- IC RAM 16MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,472
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M3016316035NX0PBCR from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling fast, reliable storage in real-time control systems.
For engineers reviewing the M3016316035NX0PBCR datasheet, M3016316035NX0PBCR pinout, M3016316035NX0PBCR application, or M3016316035NX0PBCR equivalent, this page provides verified technical context, package mapping, timing behavior, byte-select operation, and validated alternatives for industrial memory replacement scenarios.
Technical Context
The M3016316035NX0PBCR implements STT-MRAM technology using a 40nm pMTJ cell array, supporting true random-access reads and writes without erase cycles. Its parallel asynchronous interface uses active-low E#, G#, W#, UB#, and LB# controls to manage chip enable, output enable, write enable, and upper/lower byte selection independently.
It operates in two primary modes: E#-controlled and W#-controlled write operations, both requiring strict address setup and data hold timing per JEDEC-compliant AC specifications. Power-up initialization mandates synchronized assertion of E#, W#, and G# after VCC reaches ≥2.7V, with tPU ≥1ms before first instruction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16Mbit (1,048,576 × 16 organization) |
| Access Time | 35ns read/write cycle - enables SRAM-compatible timing in legacy parallel memory interfaces |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V logic rails and tolerant of brownout conditions down to 2.1V (Vwi) |
| Operating Temp | −40°C to +105°C - qualified for extended industrial environments including motor drives and power converters |
| Data Retention | 10 years at 105°C - ensures long-term data integrity without backup power or refresh circuitry |
| Endurance | 10¹⁴ write cycles - eliminates wear-out concerns in high-frequency logging or configuration storage |
| Interface | Parallel asynchronous x16 - supports direct drop-in replacement for PSRAM, SRAM, and NOR Flash in existing PCB layouts |
Pinout & Package
Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS/REACH compliant, thermal resistance θJA = 42.67°C/W (4–16Mb variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; places device in standby (ISB ≤1.7mA) when high |
| G# | Output Enable | Active-low control for DQ[15:0] drivers; required low during read, don't-care during write |
| W# | Write Enable | Active-low write strobe; determines direction of DQ bus (write when low, read when high) |
| UB# / LB# | Byte Enables | Independent active-low controls for DQ[15:8] and DQ[7:0]; enable partial-word access without masking logic |
| ADDR[19:0] | Address Inputs | 20-bit address bus for 16Mbit addressing (1,048,576 locations); no address latching required |
| DQ[15:0] | Bidirectional Data | x16 data bus with Hi-Z on deselect; supports simultaneous upper/lower byte writes via UB#/LB# |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | 35ns read/write timing with no write latency penalty or erase overhead - replaces battery-backed SRAM without redesign |
| True random access | Unrestricted read/write to any address location - eliminates block-level constraints of Flash/NOR |
| Industrial-plus temperature support | Guaranteed operation from −40°C to +105°C - suitable for under-hood automotive ECUs and industrial PLCs |
| Byte-select capability | Independent UB# and LB# controls allow 8-bit writes without disturbing adjacent bytes - reduces bus traffic in firmware update routines |
| High magnetic immunity | Withstands up to 24,000 A/m fields during read/write - robust in motor-driven or transformer-coupled environments |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing position history, calibration offsets, and safety event logs across power cycles. IC Role / Device Role / Timing Role: Non-volatile program/data memory interfacing directly to ARM Cortex-M7 MCU via parallel bus. Use Value: Eliminates supercapacitor backup and flash wear leveling firmware; retains critical state within 35ns of power restoration. | Use Scenario: Portable ultrasound device capturing and archiving image metadata, sensor calibration tables, and user preferences. IC Role / Device Role / Timing Role: High-reliability configuration store accessed during boot and runtime by FPGA-based imaging pipeline. Use Value: Guarantees 10-year data retention at 105°C ambient - meets IEC 62304 Class C software lifecycle requirements. |
| Smart Meter | Data Switches And Routers |
Use Scenario: Electricity meter recording tamper events, tariff schedules, and energy consumption snapshots every 15 minutes. IC Role / Device Role / Timing Role: Persistent register bank for metrology SoC, updated via burst writes during low-power intervals. Use Value: Supports 10¹⁴ write cycles - exceeds 20-year field lifetime at 96 writes/day without degradation. | Use Scenario: Carrier-grade Ethernet switch storing forwarding table entries, port configurations, and SNMP counters during failover. IC Role / Device Role / Timing Role: Low-latency shadow memory for ASIC register map, synchronized with PCIe host writes. Use Value: Enables sub-microsecond write commit - avoids packet loss during topology reconfiguration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B108L-BAI | 8Mbit density, 45ns access, 54-pin TSOP package, same 2.7–3.6V supply and −40°C to +85°C temp range | Limited to industrial (not industrial-plus) temperature; lacks 105°C qualification for high-ambient deployments | Select when 8Mbit capacity suffices and operating ambient stays ≤85°C; verify PCB footprint compatibility with 54-pin TSOP vs. 48-ball FBGA |
| AS16M016-35N | 16Mbit density, 35ns access, 48-ball FBGA package, but requires 1.8V core + 3.3V I/O dual supply | Requires level-shifting or dual-rail power design; incompatible with single 3.3V system architecture | Choose only if existing design already supports 1.8V/3.3V separation; otherwise, M3016316035NX0PBCR offers simpler single-supply integration |
Compared with CY14B108L-BAI and AS16M016-35N, the M3016316035NX0PBCR uniquely combines 16Mbit density, 35ns timing, industrial-plus temperature rating, and single 3.3V supply in a compact 48-ball FBGA - making it the only option qualified for high-reliability, high-temperature, space-constrained embedded systems requiring zero-refresh non-volatility.
Availability
M3016316035NX0PBCR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, smart metering, and network infrastructure applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial-plus temperature performance.
Supply support for M3016316035NX0PBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and IoT markets.
The M3016316035NX0PBCR belongs to Renesas' Parallel MRAM product line, designed specifically to replace battery-backed SRAM and legacy NOR Flash in systems demanding instant-write non-volatility, high endurance, and deterministic timing.
FAQ
What is the memory organization of the M3016316035NX0PBCR?
The M3016316035NX0PBCR features a 16Mbit density organized as 1,048,576 words × 16 bits. This corresponds to a 20-bit address bus (ADDR[19:0]) and full x16 bidirectional data interface (DQ[15:0]). The device does not use page or sector addressing - all locations are accessible with uniform 35ns timing, consistent with its SRAM-compatible architecture.
Does the M3016316035NX0PBCR require external backup power or capacitors?
No, the M3016316035NX0PBCR does not require external backup power, supercapacitors, or batteries. Its STT-MRAM technology provides inherent non-volatility: data persists indefinitely after power removal. The device guarantees 10-year data retention at 105°C and withstands 10¹⁴ write cycles - eliminating all support circuitry needed for battery-backed SRAM or managed NAND.
Can the M3016316035NX0PBCR be used as a direct replacement for standard SRAM?
Yes, the M3016316035NX0PBCR is functionally and timing-compatible with 35ns parallel SRAMs, including identical pinout for E#, G#, W#, UB#, LB#, ADDR, and DQ signals. It accepts the same control sequences and requires no firmware changes. However, unlike SRAM, it retains data without power - making it a persistent SRAM (P-SRAM) drop-in upgrade where non-volatility is required.
What is the significance of the '0P' suffix in M3016316035NX0PBCR?
The '0P' in M3016316035NX0PBCR denotes the industrial-plus temperature grade (−40°C to +105°C), as defined in Renesas' ordering system. This distinguishes it from the '0I' variant (−40°C to +85°C). The 'P' grade undergoes extended burn-in and characterization to ensure reliability at elevated junction temperatures, critical for enclosed industrial enclosures or automotive under-hood applications.
How does the M3016316035NX0PBCR handle power-up sequencing?
The M3016316035NX0PBCR requires E#, W#, and G# to follow VCC during power-up - all must remain high until VCC stabilizes above 2.7V. A minimum tPU of 1ms is required between VCC reaching specification and issuing the first command. Failure to meet this causes undefined behavior; no internal power-on reset circuitry compensates for improper sequencing.
M3016316035NX0PBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3016316035NX0PBCR FAQ
1.How can I place an order for M3016316035NX0PBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316035NX0PBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316035NX0PBCR reliable?
The price and inventory of M3016316035NX0PBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316035NX0PBCR is usually 5 days.
3.What payment methods are accepted for M3016316035NX0PBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316035NX0PBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316035NX0PBCR?
M3016316035NX0PBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316035NX0PBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316035NX0PBCR?
For technical support, including M3016316035NX0PBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316035NX0PBCR requirements.
6.How does Aetrix verify that M3016316035NX0PBCR is sourced from the original manufacturer or authorized distributors?
All M3016316035NX0PBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316035NX0PBCR meets industry standards.
7.What is the process for return or replacement of M3016316035NX0PBCR?
All M3016316035NX0PBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3016316035NX0PBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316035NX0PBCR part is unused and in its original packaging.
Return procedure for M3016316035NX0PBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316035NX0PBCR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
