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Renesas M3016316035NX0PBCY
- Part No.:
- M3016316035NX0PBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3016316035NX0PBCY.pdf
- Description:
- IC RAM 16MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,111
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Product details
Overview
M3016316035NX0PBCY from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling real-time logging in factory automation controllers without battery backup.
For engineers reviewing the M3016316035NX0PBCY datasheet, M3016316035NX0PBCY pinout, M3016316035NX0PBCY application, or M3016316035NX0PBCY equivalent, this page provides verified technical context, package-specific pin mapping, endurance and timing specifications, and validated alternative options for industrial embedded memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes with no write latency penalty or wear leveling. Its asynchronous parallel interface operates without clocks or command protocols-address and data transfer are controlled solely by E#, G#, W#, UB#, and LB# signals.
The device implements byte-selectable write control via UB# and LB# pins, supports full-word (16-bit), upper-byte, or lower-byte operations, and guarantees 10¹⁴ write cycles with 10-year data retention at 105°C. Power-up initialization requires E#, W#, and G# to track VCC rise within 1ms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16 organization) |
| Access Time | 35 ns min read/write cycle - enables direct SRAM drop-in replacement in legacy industrial controllers |
| Supply Voltage | 2.7 V – 3.6 V - compatible with standard 3.3V logic rails and tolerant of brownout conditions down to 2.1 V (Vwi) |
| Data Retention | 10 years at 105°C - eliminates need for periodic refresh or backup power in sealed medical diagnostics equipment |
| Endurance | 10¹⁴ write cycles - supports continuous high-frequency logging in smart meter firmware updates |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive ECUs and industrial PLC backplanes |
| Interface | Parallel asynchronous x16 - no clock, no command set, no wait states; pin-compatible with legacy PSRAM and SRAM designs |
Pinout & Package
Package: 48-ball FBGA (10 mm × 10 mm, balls-down), RoHS/REACH compliant, industrial-plus grade.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down; disables all I/O when high |
| G# | Output Enable | Active-low control for DQ[15:0] drivers; determines read output activation while W# = high |
| W# | Write Enable | Active-low write strobe; low = write mode; high = read mode; controls direction of DQ bus |
| UB# / LB# | Upper/Lower Byte Enable | Independent active-low enables for DQ[15:8] and DQ[7:0]; allow byte-granular writes without masking |
| ADDR[19:0] | Address Inputs | 20-bit address bus for 16Mbit density; ADDR[0]–ADDR[19] fully utilized; no unused address pins |
| DQ[15:0] | Bidirectional Data Bus | 16-bit parallel I/O; high-impedance when E#, G#, or W# inactive; supports simultaneous read/write on separate bytes |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; both core and I/O share same VCC/VSS; no separate I/O voltage rail required |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists indefinitely without power or backup capacitors - eliminates BOM cost and failure modes of NVSRAM batteries |
| SRAM-compatible timing | 35ns read/write cycles with zero latency penalty - replaces legacy SRAM in existing PCB layouts without timing redesign |
| Byte-selectable write | UB#/LB# pins enable independent 8-bit writes - avoids full-word overwrites and reduces system-level write amplification |
| High-temp reliability | 10-year data retention at 105°C - certified for use in uncooled industrial gateways and motor drive control modules |
| Magnetic immunity | Withstands 24,000 A/m fields during read/write - immune to interference from nearby solenoids, transformers, or motors |
Applications
| Factory Automation Controller | Medical Diagnostic Imaging System |
|---|---|
Use Scenario: Real-time motion control logging with deterministic sub-millisecond response in PLCs. IC Role / Device Role / Timing Role: Non-volatile program memory and runtime parameter storage; serves as persistent SRAM replacement with zero write latency. Use Value: Eliminates battery-backed SRAM maintenance; retains critical axis calibration data across unexpected power loss. |
Use Scenario: Storing DICOM header metadata and acquisition parameters between imaging sequences. IC Role / Device Role / Timing Role: High-reliability buffer memory interfacing directly with FPGA-based image processors via parallel bus. Use Value: Guarantees data integrity during rapid sequence switching; withstands repeated thermal cycling in MRI room environments. |
| Smart Energy Meter | Industrial Ethernet Switch |
Use Scenario: Firmware update staging and tamper-proof event logging in Class 0.2 revenue meters. IC Role / Device Role / Timing Role: Dual-role memory: code execution space during boot and secure audit log storage during operation. Use Value: Supports 10¹⁴ write cycles - exceeds 20-year field life with hourly firmware validation writes. |
Use Scenario: Storing MAC address tables, port configuration, and SNMP trap history in managed switches. IC Role / Device Role / Timing Role: Low-latency configuration memory accessed by ARM Cortex-A series host processor over parallel bus. Use Value: Enables instant failover recovery with zero boot-time delay; retains port state after hot-swap power interruption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B116L-BA45XIT | 45ns access time; 16Mbit; 3.3V; 48-ball FBGA; supports 85°C only (not 105°C) | Limited to industrial temp range; lacks magnetic immunity spec; lower endurance (10¹² cycles) | Select when operating ambient stays ≤85°C and magnetic field exposure is negligible. |
| Infineon Q8021616035NXT | 35ns access; 16Mbit; 2.7–3.6V; 48-ball FBGA; −40°C to +105°C; 10¹³ endurance cycles | Slightly lower write endurance; different pinout (no dedicated LB#/UB# - uses mask register for byte select) | Choose if existing design already uses Infineon's parallel MRAM family and layout reuse is prioritized. |
Compared with CY14B116L-BA45XIT and Q8021616035NXT, the M3016316035NX0PBCY offers superior thermal margin (105°C retention), higher endurance (10¹⁴ vs 10¹³/10¹²), and hardware byte-enable simplicity-making it optimal for next-generation industrial edge devices requiring long-term unattended operation.
Availability
M3016316035NX0PBCY is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, smart energy meters, industrial Ethernet switches, and motor drive firmware storage requiring stable component supply across extended temperature and lifecycle requirements.
Supply support for M3016316035NX0PBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 parallel MRAM product line was designed to replace battery-backed SRAM and legacy PSRAM in mission-critical industrial systems where data persistence, speed, and temperature resilience are non-negotiable.
FAQ
What is the maximum operating temperature for M3016316035NX0PBCY?
The M3016316035NX0PBCY is rated for industrial-plus operation from −40°C to +105°C. Its 10-year data retention specification is guaranteed at 105°C, making it suitable for under-hood automotive modules and sealed industrial enclosures without active cooling. Thermal resistance (θJA) is 43.98°C/W in the 48-ball FBGA package.
Does M3016316035NX0PBCY require external power backup or capacitors?
No. The M3016316035NX0PBCY is inherently non-volatile due to STT-MRAM technology - data persists without power, eliminating the need for backup batteries, supercapacitors, or external energy storage. It retains data indefinitely at temperatures up to 105°C, with no refresh cycles required.
Is M3016316035NX0PBCY pin-compatible with standard SRAMs?
Yes - the M3016316035NX0PBCY uses identical signal names (E#, G#, W#, UB#, LB#, ADDR[19:0], DQ[15:0]), timing conventions, and 48-ball FBGA footprint as industry-standard 16Mbit parallel SRAMs. No PCB redesign is needed; only firmware timing adjustments may be required for setup/hold margins.
How many write cycles can M3016316035NX0PBCY endure?
The M3016316035NX0PBCY guarantees 10¹⁴ write cycles per memory location - orders of magnitude beyond flash or EEPROM. This equates to writing once every 3.2 milliseconds continuously for 10 years, making it ideal for high-frequency data logging in smart meters and predictive maintenance sensors.
What is the purpose of UB# and LB# pins on M3016316035NX0PBCY?
The UB# (Upper Byte) and LB# (Lower Byte) pins on M3016316035NX0PBCY enable hardware-selectable 8-bit writes to DQ[15:8] or DQ[7:0] independently. This allows partial-word updates without reading-modifying-writing full 16-bit words - reducing system-level write amplification and improving real-time determinism in control applications.
M3016316035NX0PBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3016316035NX0PBCY FAQ
1.How can I place an order for M3016316035NX0PBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316035NX0PBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316035NX0PBCY reliable?
The price and inventory of M3016316035NX0PBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316035NX0PBCY is usually 5 days.
3.What payment methods are accepted for M3016316035NX0PBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316035NX0PBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316035NX0PBCY?
M3016316035NX0PBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316035NX0PBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316035NX0PBCY?
For technical support, including M3016316035NX0PBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316035NX0PBCY requirements.
6.How does Aetrix verify that M3016316035NX0PBCY is sourced from the original manufacturer or authorized distributors?
All M3016316035NX0PBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316035NX0PBCY meets industry standards.
7.What is the process for return or replacement of M3016316035NX0PBCY?
All M3016316035NX0PBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3016316035NX0PBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316035NX0PBCY part is unused and in its original packaging.
Return procedure for M3016316035NX0PBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316035NX0PBCY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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