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Renesas M3016316035NX0PTBR
- Part No.:
- M3016316035NX0PTBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3016316035NX0PTBR.pdf
- Description:
- IC RAM 16MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,859
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Product details
Overview
M3016316035NX0PTBR from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (–40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling fast, reliable data logging in real-time control systems.
For engineers reviewing the M3016316035NX0PTBR datasheet, M3016316035NX0PTBR pinout, M3016316035NX0PTBR application, or M3016316035NX0PTBR equivalent, this page provides verified technical context, validated pin functions, confirmed package mapping (54-pin TSOP), endurance specs (10¹⁴ cycles), and direct alternatives for industrial memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its asynchronous parallel interface supports byte- and word-level operations via independent UB#/LB# controls and standard SRAM-compatible timing.
The device implements a full addressable array of 1,048,576 × 16 bits, with on-chip row/column decoders, sense amplifiers, and I/O control logic. Power-up initialization requires E#, W#, and G# to track VCC, and write inhibition activates below 2.1–2.5V (Vwi) to prevent corruption during brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16 organization) |
| Access Time | 35 ns read/write - enables SRAM-equivalent latency in legacy bus systems |
| Supply Voltage | 2.7 V – 3.6 V - compatible with 3.3V industrial logic rails |
| Operating Temperature | –40°C to +105°C - qualified for extended industrial environments |
| Data Retention | 10 years at 105°C - guaranteed non-volatility without backup power or capacitors |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling firmware overhead |
| Interface | Parallel asynchronous x16 - pin-compatible drop-in replacement for PSRAM/EEPROM in existing PCBs |
Pinout & Package
Package: 54-pin TSOP (10 mm × 22 mm), RoHS-compliant, industrial-plus rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to ensure initialization integrity |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; high-Z when inactive to avoid bus contention |
| W# | Write Enable | Active-low signal determining direction: low = write, high = read; defines bus turnaround timing |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8]; enables partial-word writes without disturbing lower byte |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0]; supports granular 8-bit updates in mixed-data applications |
| ADDR[19:0] | Address Inputs | 20-bit address bus supporting full 16Mbit addressing (1,048,576 locations) |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with 10 pF max input capacitance; supports simultaneous read/write per byte enable |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; VSS pin 1 must be held < VIL for functional operation |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | 35ns read/write with no write delay or erase - eliminates firmware wait states and backup power circuitry |
| pMTJ STT-MRAM technology | 40nm node enabling high density, low power (20mA typical write), and immunity to >24 kA/m magnetic fields |
| Industrial-plus temperature support | Guaranteed operation from –40°C to +105°C - suitable for enclosed industrial controllers without active cooling |
| Byte-selective write capability | Independent UB#/LB# pins allow 8-bit updates without reading-modifying-writing full 16-bit words |
| Robust power sequencing | Vwi write-inhibit threshold (2.1–2.5V) prevents data corruption during brownout; tPU < 1 ms ensures fast boot readiness |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Buffers |
|---|---|
Use Scenario: Real-time I/O state logging and recipe storage in programmable logic controllers with frequent power cycling. IC Role / Device Role / Timing Role: Non-volatile working memory replacing battery-backed SRAM; retains configuration and last-known state across cold starts. Use Value: Eliminates battery maintenance, avoids data loss during unexpected shutdown, and sustains 100% uptime in unattended production lines. |
Use Scenario: Temporary frame buffering in portable ultrasound or X-ray units where rapid image capture and immediate power-down are required. IC Role / Device Role / Timing Role: High-speed, non-volatile frame store interfacing directly to FPGA-based image processors via parallel bus. Use Value: Captures full diagnostic frames before power removal; enables instant-on resume without reacquisition or flash wear degradation. |
| Smart Energy Metering | Industrial Network Routers |
Use Scenario: Tamper-proof energy consumption logging and tariff schedule storage in ANSI C12.22-compliant meters operating in outdoor enclosures. IC Role / Device Role / Timing Role: Secure, long-retention data vault for billing-critical registers and firmware update staging. Use Value: Guarantees 10-year data integrity at 105°C ambient - meets utility-grade meter certification requirements without external EEPROM or FRAM. |
Use Scenario: Configuration and routing table persistence in DIN-rail mounted industrial Ethernet switches deployed in factory-floor networks. IC Role / Device Role / Timing Role: Fast-access configuration memory holding MAC tables, VLAN settings, and firmware patch metadata. Use Value: Enables sub-100ms failover and zero-downtime reconfiguration after reboot - critical for deterministic network availability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B116L-BA25XI | 16Mb nvSRAM with 25ns access; requires external capacitor for write-back; 85°C max operating temp | Limited to industrial (not industrial-plus) environments; capacitor dependency adds BOM cost and reliability risk | Select only if 25ns speed is mandatory and ambient stays ≤85°C; verify capacitor derating for lifetime |
| Everspin MR25H16MDF | 16Mb SPI MRAM; serial interface; 45ns access; same pMTJ STT tech but no parallel x16 bus | Requires MCU firmware rewrite for SPI vs. parallel; unsuitable for legacy SRAM-bus designs | Choose only for new designs prioritizing pin count reduction over bus bandwidth; not a drop-in replacement |
Compared with M3016316035NX0PTBR, CY14B116L-BA25XI trades temperature robustness and capacitor-free operation for marginally faster access, while MR25H16MDF sacrifices parallel bus compatibility for smaller footprint and simpler routing - neither matches the combination of 35ns, 105°C, and true x16 SRAM pinout offered by M3016316035NX0PTBR.
Availability
M3016316035NX0PTBR is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging buffers, and smart energy metering requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for M3016316035NX0PTBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3016316035NX0PTBR belongs to the M3xxx316 parallel MRAM family, engineered to replace battery-backed SRAM and legacy EEPROM/Flash in high-reliability, low-latency industrial memory applications.
FAQ
What is the maximum operating temperature for M3016316035NX0PTBR?
M3016316035NX0PTBR is rated for industrial-plus operation from –40°C to +105°C. This specification is validated per JEDEC standards and applies across the full 2.7–3.6V supply range and all supported densities. Thermal resistance (θJA) is 52.78°C/W for the 54-pin TSOP package, confirming suitability for sealed enclosures without forced air cooling.
Does M3016316035NX0PTBR require an external capacitor or backup battery?
No, M3016316035NX0PTBR is inherently non-volatile and requires no external capacitor, battery, or supercapacitor. Data retention is achieved through magnetic storage in the pMTJ stack, guaranteeing 10 years at 105°C without auxiliary power. This eliminates associated failure modes, BOM cost, and board space used by backup components.
Is M3016316035NX0PTBR pin-compatible with standard SRAM devices?
M3016316035NX0PTBR uses a 54-pin TSOP package with industry-standard pinout for x16 parallel memories, including identical E#, G#, W#, UB#, LB#, ADDR[19:0], and DQ[15:0] assignments. It is designed as a drop-in replacement for 16Mb PSRAM and nvSRAM in existing layouts, though timing validation per AC specs (e.g., tWLWH, tELQV) is required for full functional equivalence.
What is the write endurance rating of M3016316035NX0PTBR?
M3016316035NX0PTBR guarantees 10¹⁴ write cycles - effectively unlimited for all industrial applications. This endurance stems from the spin-transfer torque (STT) switching mechanism in its 40nm pMTJ cells, which avoids the oxide degradation inherent in Flash or the charge leakage issues of nvSRAM. No wear leveling or write distribution algorithms are needed in system firmware.
How does M3016316035NX0PTBR handle power loss during a write operation?
M3016316035NX0PTBR incorporates hardware write-inhibit (Vwi) functionality: when VCC drops below 2.1–2.5V, internal circuitry blocks write commands to prevent partial or corrupted writes. The device also mandates synchronized power sequencing - E#, W#, and G# must follow VCC during both power-up and power-down - ensuring deterministic behavior under brownout conditions.
M3016316035NX0PTBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3016316035NX0PTBR FAQ
1.How can I place an order for M3016316035NX0PTBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316035NX0PTBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316035NX0PTBR reliable?
The price and inventory of M3016316035NX0PTBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316035NX0PTBR is usually 5 days.
3.What payment methods are accepted for M3016316035NX0PTBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316035NX0PTBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316035NX0PTBR?
M3016316035NX0PTBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316035NX0PTBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316035NX0PTBR?
For technical support, including M3016316035NX0PTBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316035NX0PTBR requirements.
6.How does Aetrix verify that M3016316035NX0PTBR is sourced from the original manufacturer or authorized distributors?
All M3016316035NX0PTBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316035NX0PTBR meets industry standards.
7.What is the process for return or replacement of M3016316035NX0PTBR?
All M3016316035NX0PTBR units undergo pre-shipment inspection (PSI). If there is an issue with M3016316035NX0PTBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316035NX0PTBR part is unused and in its original packaging.
Return procedure for M3016316035NX0PTBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316035NX0PTBR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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