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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M3016316035NX0PTBY

Name: M3016316035NX0PTBY
Brand: Renesas
SKU: M3016316035NX0PTBY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M3016316035NX0PTBY

Manufacturer:: Renesas

Category:: Memory

Package:: 54-TSOP (0.400", 10.16mm Width)

Datasheet:: M3016316035NX0PTBY.pdf

Description:: IC RAM 16MBIT PAR 54TSOP

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Product details

Overview

M3016316035NX0PTBY from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling real-time data logging in factory automation controllers without battery backup.

For engineers reviewing the M3016316035NX0PTBY datasheet, M3016316035NX0PTBY pinout, M3016316035NX0PTBY application, or M3016316035NX0PTBY equivalent, this page provides verified timing parameters, validated TSOP/FBGA package mappings, byte-enable control behavior, magnetic immunity specs (24 kA/m), and direct alternatives for industrial-grade non-volatile memory replacement.

Technical Context

This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, supporting true random-access reads and writes with no write latency penalty or erase cycles. Its asynchronous parallel interface implements independent upper/lower byte enables (UB#/LB#) and separate chip/output/write controls (E#/G#/W#) for deterministic bus turnaround.

The device operates across two voltage domains (VCC only, no VIO), requires strict power-rail sequencing (E#/W#/G# must track VCC during power-up/down), and guarantees 10¹⁴ write cycles with 10-year data retention at 105°C - enabled by intrinsic magnetic storage stability rather than charge-based mechanisms.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	16 Mbit (1,048,576 × 16 organization) - supports full-word, upper-byte, or lower-byte writes without internal page constraints.
Access Timing	35 ns read/write cycle time - eliminates wait states in high-speed microcontroller or FPGA memory interfaces requiring sub-40ns non-volatile access.
Supply Voltage	2.7 V – 3.6 V - compatible with standard 3.3V industrial logic rails and tolerant of brownout conditions down to 2.1V (Vwi).
Operating Temperature	−40°C to +105°C (Industrial Plus grade) - qualified for under-hood automotive ECUs, motor drives, and sealed industrial enclosures.
Data Retention	10 years at 105°C - ensures firmware and calibration data persistence over full product lifecycle without refresh or backup power.
Endurance	10¹⁴ write cycles - exceeds flash by 10⁶×, enabling continuous logging (e.g., sensor timestamp buffers) without wear leveling.
Magnetic Immunity	24,000 A/m during read/write - withstands strong external fields from motors, solenoids, or transformers without data corruption.

Pinout & Package

Package: 54-pin TSOP (10 mm × 22 mm), RoHS-compliant, industrial-plus rated. Pinout validated per Renesas datasheet pages 8–9 and Figure 2.

Pin/Terminal	Circuit Role	Design Meaning
E#	Chip Enable	Active-low global enable; must track VCC during power-up/down to prevent undefined state or latch-up.
G#	Output Enable	Active-low control for DQ[15:0] drivers; sets Hi-Z when high, enabling shared bus arbitration.
W#	Write Enable	Active-low write strobe; low = write mode (data latched on rising edge of W#), high = read mode.
UB# / LB#	Byte Enables	Independent active-low controls for DQ[15:8] (UB#) and DQ[7:0] (LB#); allow partial-word writes without read-modify-write.
ADDR[19:0]	Address Inputs	20-bit address bus (1,048,576 locations); ADDR[19] is MSB for 16Mbit density - no address multiplexing required.
DQ[15:0]	Bidirectional Data I/O	16-bit parallel data path; supports simultaneous upper/lower byte access or full-word transfers with single-cycle timing.

Key Features

Feature	Design Value
Persistent SRAM Interface	Drop-in replacement for volatile PSRAM/SRAM in existing 16-bit parallel designs - same timing, pinout, and control protocol.
Zero-Write-Erase Latency	Writes complete in 35 ns with no block erase overhead - enables deterministic real-time data capture (e.g., motion controller position snapshots).
Unlimited Endurance	10¹⁴ write cycles eliminates field failure risk from frequent logging - critical for smart meter firmware updates and event history buffers.
Single-Supply Operation	VCC-only power (2.7–3.6V) removes need for auxiliary voltage rails or level shifters - simplifies PCB layout and BOM.
High-Temp Non-Volatility	Guaranteed 10-year data retention at 105°C - replaces battery-backed SRAM in industrial gateways where battery maintenance is impractical.

Applications

Factory Automation PLCs	Medical Diagnostic Imaging Systems
Use Scenario: Storing real-time I/O state snapshots and motion trajectory buffers in programmable logic controllers operating in uncontrolled ambient environments. IC Role / Device Role / Timing Role: Non-volatile frame buffer and configuration store interfaced directly to ARM Cortex-M7 MCU's external memory bus. Use Value: Eliminates supercapacitor backup circuitry while maintaining <35ns write latency for sub-millisecond control loop updates.	Use Scenario: Capturing raw sensor data streams from ultrasound transducer arrays during imaging sessions where power loss must not corrupt prior acquisitions. IC Role / Device Role / Timing Role: High-reliability intermediate storage between ADC front-end and FPGA-based beamforming engine. Use Value: Guarantees 10¹⁴ write endurance and 10-year retention at 85°C - meets IEC 62304 Class C software safety requirements.
Industrial Ethernet Switches	Smart Energy Meters
Use Scenario: Logging network packet timestamps, MAC table changes, and firmware update staging in DIN-rail mounted switches deployed in substations. IC Role / Device Role / Timing Role: Deterministic non-volatile memory mapped to switch ASIC's parallel memory interface for zero-latency register shadowing. Use Value: Withstands 24 kA/m magnetic fields near current transformers and operates reliably at 105°C ambient - no derating required.	Use Scenario: Storing tariff schedules, tamper-event logs, and metrology calibration coefficients in ANSI C12.20-certified meters exposed to outdoor temperature extremes. IC Role / Device Role / Timing Role: Primary non-volatile storage for secure firmware and billing-critical data, replacing EEPROM/Flash in meter SoC subsystems. Use Value: 10-year data retention at 105°C eliminates annual recalibration visits - reduces O&M cost by >30% over 15-year service life.

Factory Automation PLCs

Medical Diagnostic Imaging Systems

Use Scenario: Storing real-time I/O state snapshots and motion trajectory buffers in programmable logic controllers operating in uncontrolled ambient environments.

IC Role / Device Role / Timing Role: Non-volatile frame buffer and configuration store interfaced directly to ARM Cortex-M7 MCU's external memory bus.

Use Value: Eliminates supercapacitor backup circuitry while maintaining <35ns write latency for sub-millisecond control loop updates.

Use Scenario: Capturing raw sensor data streams from ultrasound transducer arrays during imaging sessions where power loss must not corrupt prior acquisitions.

IC Role / Device Role / Timing Role: High-reliability intermediate storage between ADC front-end and FPGA-based beamforming engine.

Use Value: Guarantees 10¹⁴ write endurance and 10-year retention at 85°C - meets IEC 62304 Class C software safety requirements.

Industrial Ethernet Switches

Smart Energy Meters

Use Scenario: Logging network packet timestamps, MAC table changes, and firmware update staging in DIN-rail mounted switches deployed in substations.

IC Role / Device Role / Timing Role: Deterministic non-volatile memory mapped to switch ASIC's parallel memory interface for zero-latency register shadowing.

Use Value: Withstands 24 kA/m magnetic fields near current transformers and operates reliably at 105°C ambient - no derating required.

Use Scenario: Storing tariff schedules, tamper-event logs, and metrology calibration coefficients in ANSI C12.20-certified meters exposed to outdoor temperature extremes.

IC Role / Device Role / Timing Role: Primary non-volatile storage for secure firmware and billing-critical data, replacing EEPROM/Flash in meter SoC subsystems.

Use Value: 10-year data retention at 105°C eliminates annual recalibration visits - reduces O&M cost by >30% over 15-year service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile parallel memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Everspin MR2A16A	16Mbit, 45ns access, 3.3V, 44-pin TSOP - slower timing, smaller package, no 105°C rating.	Limited to industrial-grade (−40°C to 85°C) deployments; unsuitable for under-hood or sealed high-temp enclosures.	Select when board space is constrained and 45ns latency is acceptable; verify thermal margin at 85°C ambient.
Renesas M3016316045NX0PTBY	Same density, package, and temperature grade but 45ns timing - higher noise margin, relaxed setup/hold, lower power.	Better suited for cost-sensitive designs where deterministic 35ns timing is unnecessary and EMI robustness is prioritized.	Choose for legacy system upgrades where timing margins are marginal or where reduced EMI improves EMC compliance.

Compared with M3016316035NX0PTBY, MR2A16A trades speed and temperature rating for footprint reduction, while M3016316045NX0PTBY retains identical reliability and packaging but relaxes timing to ease signal integrity design - all three share identical pMTJ STT-MRAM core architecture and byte-enable functionality.

Availability

M3016316035NX0PTBY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, industrial Ethernet switches, and smart energy meters requiring stable component supply across extended temperature ranges and multi-decade lifecycles.

Supply support for M3016316035NX0PTBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M3xxx316 family was designed to replace battery-backed SRAM and legacy NVRAM in mission-critical industrial systems where data persistence, speed, and long-term reliability outweigh cost-per-bit considerations.

FAQ

What is the guaranteed data retention period for M3016316035NX0PTBY at 105°C?

M3016316035NX0PTBY guarantees 10 years of data retention at 105°C, as specified in Table 16 of the official Renesas datasheet. This is achieved through intrinsic magnetic storage stability in the pMTJ cell structure, eliminating charge leakage mechanisms found in flash or DRAM. The 10-year figure is measured and validated under accelerated life testing per JEDEC standards.

Does M3016316035NX0PTBY require external power backup or capacitors for data retention?

No, M3016316035NX0PTBY is inherently non-volatile and requires no external backup power, supercapacitors, or batteries. Data persists indefinitely without power due to magnetic domain alignment in the STT-MRAM cell. Power-loss protection is handled internally via Vwi (write-inhibit voltage) monitoring - writes are automatically disabled when VCC drops below 2.1V.

Can M3016316035NX0PTBY be used as a direct replacement for standard SRAM in an existing design?

M3016316035NX0PTBY supports SRAM-compatible timing (35ns read/write) and identical control signals (E#, G#, W#, UB#, LB#), making it a functional drop-in replacement for many 16-bit parallel SRAMs. However, power sequencing must be verified: E#/W#/G# must track VCC during power-up/down, unlike most SRAMs. Layout changes may be needed if the original SRAM used different package dimensions (54-pin TSOP vs. common 44-pin SRAM).

What is the maximum magnetic field strength M3016316035NX0PTBY can withstand during operation?

M3016316035NX0PTBY is rated for continuous exposure to magnetic fields up to 24,000 A/m (300 Gauss) during both read and write operations, as confirmed in Tables 9 and 11 of the Renesas datasheet. This immunity allows reliable deployment near motors, transformers, and solenoids without shielding - a key advantage over conventional MRAM or Hall-effect sensors.

How does the byte-enable functionality (UB#/LB#) operate in M3016316035NX0PTBY?

In M3016316035NX0PTBY, UB# and LB# are independent active-low enables controlling DQ[15:8] and DQ[7:0], respectively. When both are low, full 16-bit word access occurs; when only UB# is low, only upper byte is written/read; when only LB# is low, only lower byte is accessed. This enables efficient partial-word updates without read-modify-write cycles - critical for atomic flag or status register updates.

M3016316035NX0PTBY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 54-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Obsolete

Programmable:: -

Memory Type:: Non-Volatile

Memory Format:: RAM

Technology:: MRAM (Magnetoresistive RAM)

Memory Size:: 16Mbit

Memory Organization:: 1M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 35ns

Access Time:: 35 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 105°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-TSOP

M3016316035NX0PTBY FAQ

1.How can I place an order for M3016316035NX0PTBY through Aetrix?

Please submit a Request for Quotation (RFQ) for M3016316035NX0PTBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M3016316035NX0PTBY reliable?

The price and inventory of M3016316035NX0PTBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316035NX0PTBY is usually 5 days.

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M3016316035NX0PTBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M3016316035NX0PTBY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M3016316035NX0PTBY?

For technical support, including M3016316035NX0PTBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316035NX0PTBY requirements.

6.How does Aetrix verify that M3016316035NX0PTBY is sourced from the original manufacturer or authorized distributors?

All M3016316035NX0PTBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316035NX0PTBY meets industry standards.

7.What is the process for return or replacement of M3016316035NX0PTBY?

All M3016316035NX0PTBY units undergo pre-shipment inspection (PSI). If there is an issue with M3016316035NX0PTBY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M3016316035NX0PTBY part is unused and in its original packaging.

Return procedure for M3016316035NX0PTBY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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