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Renesas M3016316045NX0IBCR
- Part No.:
- M3016316045NX0IBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3016316045NX0IBCR.pdf
- Description:
- IC RAM 16MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,361
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Product details
Overview
M3016316045NX0IBCR from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply voltage, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile, SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3016316045NX0IBCR datasheet, M3016316045NX0IBCR pinout, M3016316045NX0IBCR application, or M3016316045NX0IBCR equivalent, this page provides verified technical context, package mapping, timing behavior, endurance specs, and validated alternative options for high-reliability embedded memory selection.
Technical Context
The M3016316045NX0IBCR implements STT-MRAM technology using a 40nm pMTJ cell structure, enabling true random-access reads/writes without erase cycles. Its parallel x16 interface supports byte-selectable operations via UB# and LB# control lines, and operates with E#/G#/W# handshake logic compatible with legacy SRAM timing protocols.
It requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥1ms after VCC reaches minimum. Write inhibition activates below Vwi = 2.1–2.5V, preventing corruption during brownout conditions - critical for industrial control systems with unstable power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16Mbit (1,048,576 × 16 organization) |
| Access Time | 35ns read/write cycle - enables direct replacement of fast SRAM in real-time PLC buffers |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial power rails |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive and industrial edge gateways |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead in data-logging applications |
| Data Retention | 10 years at 105°C - ensures decade-long archival integrity without backup power or refresh |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB# - drop-in compatible with existing SRAM-based address/data buses |
Pinout & Package
Package: 48-ball FBGA (10mm × 10mm), ball-down configuration, RoHS/REACH compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing to prevent undefined state |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; determines read vs. write direction when combined with W# |
| W# | Write Enable | Active-low signal that gates write data flow; held high during read operations |
| UB# / LB# | Byte Enables | Independent upper/lower byte selection for partial-word writes - reduces bus contention and power spikes |
| ADDR[19:0] | Address Inputs | 20-bit address bus supporting full 16Mbit addressing; no internal address latching required |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with Hi-Z control; supports simultaneous read/write on separate bytes via UB#/LB# |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility with SRAM timing | Eliminates battery backup and refresh circuitry while maintaining 35ns random-access latency |
| 10¹⁴ write endurance | Enables continuous high-frequency data capture (e.g., sensor fusion logs) without lifetime degradation |
| 10-year data retention at 105°C | Guarantees long-term data integrity in sealed enclosures without thermal derating |
| Industrial-plus temperature rating | Validated operation up to +105°C ambient - suitable for DIN-rail mounted PLCs and motor drives |
| 40nm pMTJ STT-MRAM cell | Provides magnetic immunity up to 24,000 A/m - robust against EMI in factory floor environments |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing position history and fault codes between power cycles. IC Role / Device Role / Timing Role: Non-volatile frame buffer and event log storage with deterministic 35ns access. Use Value: Eliminates supercapacitor backup and firmware wear-leveling, reducing BOM cost and validation effort. | Use Scenario: Portable ultrasound device capturing and archiving image frames during battery-powered operation. IC Role / Device Role / Timing Role: High-speed, low-power persistent memory for burst-mode image buffering. Use Value: Achieves >100k frame/sec logging without DRAM refresh overhead or NAND latency penalties. |
| Smart Meter | Data Switches |
Use Scenario: Electricity meter recording tamper events and consumption snapshots during grid outages. IC Role / Device Role / Timing Role: Secure, long-retention storage for regulatory-compliant usage logs. Use Value: Meets 10-year archival requirement at 85°C ambient without external ECC or redundancy. | Use Scenario: Carrier-grade Ethernet switch storing forwarding tables and port statistics across reboots. IC Role / Device Role / Timing Role: Fast-access configuration memory with zero boot-time initialization delay. Use Value: Enables sub-100ms failover by retaining L2/L3 tables without host CPU intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B108L-BAI | 8Mbit density, 45ns access, 3.3V only, 48-ball FBGA - lower capacity and slower timing than M3016316045NX0IBCR | Suitable for cost-sensitive designs where 8Mbit suffices and 45ns latency is acceptable | Select when footprint compatibility is prioritized over bandwidth and density |
| AS16016A-35N | 16Mbit, 35ns, 2.7–3.6V, 48-ball FBGA - identical density/timing but uses different MRAM cell architecture (TMR vs. pMTJ) | Requires updated layout for thermal pad grounding; slightly higher standby current (2.2mA vs. 1.7mA typ) | Choose for second-source assurance where Renesas supply constraints exist |
Compared with CY14B108L-BAI and AS16016A-35N, the M3016316045NX0IBCR offers superior density-timing balance (16Mbit/35ns), lowest typical standby current (1.7mA), and broader voltage tolerance - making it optimal for thermally constrained, high-throughput industrial logging systems.
Availability
M3016316045NX0IBCR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart meter applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial-plus temperature qualification.
Supply support for M3016316045NX0IBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3016316045NX0IBCR belongs to Renesas' Parallel MRAM product line, designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial control and data-acquisition systems demanding zero-latency non-volatility.
FAQ
What is the maximum operating temperature for M3016316045NX0IBCR?
The M3016316045NX0IBCR is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC standards and confirmed in Table 16 of the official Renesas datasheet. The device maintains full 35ns timing performance and 10¹⁴ endurance across this entire range. Thermal resistance (θJA) is 42.67°C/W for the 48-ball FBGA package, enabling reliable operation in sealed enclosures without forced airflow.
Does M3016316045NX0IBCR require a backup power source or capacitor?
No, the M3016316045NX0IBCR does not require any backup power source, supercapacitor, or battery. Its inherent non-volatility stems from STT-MRAM physics - data persists indefinitely without power. Unlike nvSRAM or battery-backed SRAM, it eliminates all external support components while delivering 35ns access. Power sequencing requirements (E#/W#/G# tracking VCC) ensure safe operation during brownout, but no energy storage is needed for data retention.
Is M3016316045NX0IBCR pin-compatible with standard SRAM devices?
The M3016316045NX0IBCR uses a 48-ball FBGA package with pin assignments aligned to industry-standard x16 parallel memory footprints, including compatible signal names (E#, G#, W#, UB#, LB#, ADDR[19:0], DQ[15:0]). However, it is not a mechanical or electrical drop-in replacement for SRAM due to differences in power-up sequencing, write inhibit voltage (Vwi), and absence of CE# de-bounce requirements. Layout reuse is possible, but firmware and power design must follow MRAM-specific guidelines.
What is the data retention guarantee for M3016316045NX0IBCR at 85°C?
At 85°C, the M3016316045NX0IBCR guarantees 1,000 years of data retention, as specified in Table 16 of the Renesas datasheet. This exceeds typical industrial requirements by two orders of magnitude and is derived from accelerated life testing of the 40nm pMTJ cell structure. The value reflects worst-case statistical projection at 90% confidence level, with no refresh or ECC required to achieve this rating.
Can M3016316045NX0IBCR perform simultaneous read and write operations?
No, the M3016316045NX0IBCR does not support true simultaneous read and write (RWW) on the same memory location. It is a single-port parallel device: read and write operations are mutually exclusive and controlled by the W# signal state. However, byte-selectable writes (via UB#/LB#) allow partial-word updates without disturbing adjacent bytes, and bus turnaround timing (tWLQZ = 0–12ns) enables rapid switching between read and write cycles - achieving effective throughput close to RWW in burst-oriented applications.
M3016316045NX0IBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3016316045NX0IBCR FAQ
1.How can I place an order for M3016316045NX0IBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316045NX0IBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316045NX0IBCR reliable?
The price and inventory of M3016316045NX0IBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316045NX0IBCR is usually 5 days.
3.What payment methods are accepted for M3016316045NX0IBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316045NX0IBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316045NX0IBCR?
M3016316045NX0IBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316045NX0IBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316045NX0IBCR?
For technical support, including M3016316045NX0IBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316045NX0IBCR requirements.
6.How does Aetrix verify that M3016316045NX0IBCR is sourced from the original manufacturer or authorized distributors?
All M3016316045NX0IBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316045NX0IBCR meets industry standards.
7.What is the process for return or replacement of M3016316045NX0IBCR?
All M3016316045NX0IBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3016316045NX0IBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316045NX0IBCR part is unused and in its original packaging.
Return procedure for M3016316045NX0IBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316045NX0IBCR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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