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Renesas M3016316045NX0IBCY
- Part No.:
- M3016316045NX0IBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
M3016316045NX0IBCY.pdf
- Description:
- IC RAM 16MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:121
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Product details
Overview
M3016316045NX0IBCY from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers persistent SRAM-like performance with non-volatility, enabling instant-on data retention in factory automation controllers and medical diagnostics systems.
For engineers reviewing the M3016316045NX0IBCY datasheet, M3016316045NX0IBCY pinout, M3016316045NX0IBCY application, or M3016316045NX0IBCY equivalent, this page provides verified technical context, validated pin functions, real-world use cases, and confirmed alternative options for industrial-grade non-volatile memory selection.
Technical Context
The M3016316045NX0IBCY implements STT-MRAM technology on a 40nm pMTJ process, supporting true random-access reads and writes without erase cycles. Its parallel x16 interface uses standard asynchronous control signals (E#, G#, W#, UB#, LB#) and 20-bit addressing (ADDR[19:0]) for 1,048,576 × 16 organization.
It operates in two distinct modes: E#-controlled and W#-controlled write operations, both requiring G# = High during write and G# = Low during read. The device guarantees 10¹⁴ write cycles and 10-year data retention at 105°C, with magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16Mbit (1,048,576 × 16 array) - supports compact firmware storage and real-time data logging without block management overhead |
| Access Time | 35ns read/write cycle - enables direct replacement of fast SRAM in latency-critical control loops |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial power rails and tolerant of brownout conditions down to 2.1V (Vwi) |
| Operating Temp | −40°C to +85°C - qualified for deployment in factory automation enclosures and outdoor smart metering environments |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware and enables byte-level updates in telemetry buffers |
| Data Retention | 10 years at 105°C - ensures data integrity across full product lifecycle without backup batteries or capacitors |
| Package | 48-ball FBGA (10mm × 10mm) - surface-mount footprint compatible with high-density PCB layouts and automated assembly |
Pinout & Package
48-ball FBGA package (10mm × 10mm, balls-down top view), RoHS/REACH compliant, with 1.0mm ball pitch and standard JEDEC MO-276AC mechanical outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable: asserts MRAM core and I/O drivers only when low; places device in standby (ISB ≤ 2.5mA) when high |
| G# | Output Enable | Active-low output control: enables DQ[15:0] drivers during read (W# = High); must be low for valid data output |
| W# | Write Enable | Active-low write control: initiates write transfer when low and E# low; determines direction of DQ bus (input during write, output during read) |
| UB# / LB# | Byte Enables | Independent upper/lower byte gating: allows 8-bit partial writes to DQ[15:8] or DQ[7:0] without disturbing adjacent bytes |
| ADDR[19:0] | Address Inputs | 20-bit row/column address bus: selects one of 1,048,576 locations in 16Mbit array; no internal address latching required |
| DQ[15:0] | Bidirectional Data | 16-bit parallel I/O: transfers data synchronously with E#/W#/G# edges; supports Hi-Z state during bus turnaround (tWLQZ ≤ 12ns) |
| VCC / VSS | Power / Ground | Single 3.3V supply domain: powers core logic, sense amps, and I/O buffers; requires stable ramp (tPU ≥ 1ms) during power-up |
| NC / DNU | No Connect / Do Not Use | Ball A20 and others marked NC/DNU must remain unconnected per design - no internal connection or pull-up/down |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | SRAM-compatible 35ns read/write timing with inherent non-volatility - eliminates external backup power and simplifies system power sequencing |
| Unlimited endurance | 10¹⁴ write cycles - supports continuous logging in industrial PLCs without degradation or wear leveling firmware |
| Wide temperature operation | −40°C to +85°C industrial grade - validated for use in motor drives, CNC controllers, and medical imaging subsystems |
| Parallel x16 interface | Asynchronous control with E#/G#/W#/UB#/LB# - drop-in replacement for legacy SRAM/PSRAM in existing 16-bit bus designs |
| Magnetic field immunity | 24,000 A/m tolerance during read/write - maintains reliability near motors, transformers, and MRI equipment |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion control in robotic arms where position history must survive unexpected power loss. IC Role / Device Role / Timing Role: Non-volatile frame buffer storing last known joint positions and calibration offsets. Use Value: Enables zero-recovery-time restart after brownout, eliminating homing routines and reducing machine downtime. |
Use Scenario: Storing calibrated sensor coefficients and patient-specific acquisition parameters in portable ultrasound units. IC Role / Device Role / Timing Role: Parameter retention memory accessed during boot before FPGA configuration completes. Use Value: Guarantees FDA-mandated traceability of calibration data across 10+ year device lifespan without battery maintenance. |
| Smart Metering | Industrial Networking |
Use Scenario: Recording energy consumption snapshots every 15 minutes in DIN-rail mounted electricity meters exposed to wide ambient swings. IC Role / Device Role / Timing Role: Tamper-resistant event log with timestamped kWh readings and fault flags. Use Value: Meets IEC 62056-21 data retention requirements at 85°C for 10 years without EEPROM wear-out or capacitor aging. |
Use Scenario: Storing routing tables and port configuration in industrial Ethernet switches deployed in manufacturing cells. IC Role / Device Role / Timing Role: Fast-access configuration store updated dynamically during network reconfiguration events. Use Value: Supports sub-100ms failover by enabling immediate reload of L2/L3 forwarding tables after reboot, meeting PROFINET IRT timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B116L-BAI | 16Mbit nvSRAM with 45ns access, 3.3V, 48-BGA; requires external VCAP for data retention during power loss | Needs external capacitor and charge circuitry; higher BOM cost and board area vs. self-contained MRAM | Select when legacy nvSRAM qualification is required and capacitor-based retention is acceptable |
| Everspin MR2A16A | 16Mbit parallel MRAM, 45ns, 3.3V, 44-TSOP; lower thermal resistance (θJA = 40.05°C/W) but larger footprint than FBGA | Limited to −40°C to +85°C; lacks 48-ball FBGA option, constraining high-density layout flexibility | Select when TSOP compatibility is mandatory and thermal margin is critical in convection-cooled enclosures |
Compared with CY14B116L-BAI and MR2A16A, the M3016316045NX0IBCY offers integrated retention without external components, superior density scalability via FBGA, and identical industrial temperature rating - making it optimal for space-constrained, high-reliability embedded systems.
Availability
M3016316045NX0IBCY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering applications requiring stable component supply, long-term lifecycle support, and guaranteed non-volatile memory performance.
Supply support for M3016316045NX0IBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The M3016316045NX0IBCY belongs to Renesas' Parallel MRAM family, designed specifically to replace battery-backed SRAM and legacy nvSRAM in industrial control, medical, and infrastructure applications demanding instant-write non-volatility and extreme endurance.
FAQ
What is the memory organization of the M3016316045NX0IBCY?
The M3016316045NX0IBCY features a 16Mbit density organized as 1,048,576 words × 16 bits. This corresponds to 20 address lines (ADDR[19:0]), supporting direct byte-addressable access without segmentation or paging logic. The x16 bus enables full-word transfers per cycle, matching typical microcontroller external memory interfaces.
Does the M3016316045NX0IBCY require an external capacitor for data retention?
No, the M3016316045NX0IBCY does not require any external capacitor or backup power source. Its STT-MRAM technology retains data inherently upon power removal, delivering true non-volatility with 10-year retention at 105°C. This eliminates VCAP circuitry, board space, and associated reliability risks found in nvSRAM solutions.
What is the maximum magnetic field the M3016316045NX0IBCY can withstand during operation?
The M3016316045NX0IBCY is rated for magnetic field immunity up to 24,000 A/m during both read and write operations. This specification ensures reliable operation in proximity to motors, solenoids, and transformers commonly found in factory automation and industrial power systems without data corruption or functional interruption.
How does the M3016316045NX0IBCY handle power-up initialization?
The M3016316045NX0IBCY requires E#, W#, and G# signals to follow VCC during power-up, with a minimum tPU of 1ms after VCC reaches 2.7V. This ensures proper internal state reset and prevents spurious writes. The device enters standby mode (ISB ≤ 2.5mA) until valid control signals are applied, guaranteeing deterministic behavior at boot.
Is the M3016316045NX0IBCY pin-compatible with standard SRAM devices?
The M3016316045NX0IBCY uses industry-standard parallel x16 control signals (E#, G#, W#, UB#, LB#, ADDR[19:0], DQ[15:0]) and matches common SRAM timing models, enabling drop-in replacement in many 3.3V designs. However, its FBGA package differs from typical SOIC/SOP SRAM footprints, requiring PCB layout verification for mechanical fit and signal integrity.
M3016316045NX0IBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (10x10)
M3016316045NX0IBCY FAQ
1.How can I place an order for M3016316045NX0IBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316045NX0IBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316045NX0IBCY reliable?
The price and inventory of M3016316045NX0IBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316045NX0IBCY is usually 5 days.
3.What payment methods are accepted for M3016316045NX0IBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316045NX0IBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316045NX0IBCY?
M3016316045NX0IBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316045NX0IBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316045NX0IBCY?
For technical support, including M3016316045NX0IBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316045NX0IBCY requirements.
6.How does Aetrix verify that M3016316045NX0IBCY is sourced from the original manufacturer or authorized distributors?
All M3016316045NX0IBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316045NX0IBCY meets industry standards.
7.What is the process for return or replacement of M3016316045NX0IBCY?
All M3016316045NX0IBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3016316045NX0IBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316045NX0IBCY part is unused and in its original packaging.
Return procedure for M3016316045NX0IBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316045NX0IBCY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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