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Renesas M3016316045NX0ITBR
- Part No.:
- M3016316045NX0ITBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3016316045NX0ITBR.pdf
- Description:
- IC RAM 16MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,482
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Product details
Overview
M3016316045NX0ITBR from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 interface, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (–40°C to +85°C). It delivers persistent SRAM-like performance with non-volatility, enabling instant-on data retention in factory automation controllers and medical diagnostics systems.
For engineers reviewing the M3016316045NX0ITBR datasheet, M3016316045NX0ITBR pinout, M3016316045NX0ITBR application, or M3016316045NX0ITBR equivalent, this page provides verified technical context, validated pin functions, real-world use cases, and confirmed alternative options for industrial-grade non-volatile memory selection.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, delivering true random-access read/write with no write latency penalty or wear leveling. Its parallel x16 asynchronous interface supports byte- and word-level operations via dedicated UB#/LB# controls and standard E#/G#/W# command protocol.
The device implements a full MRAM array architecture with row/column decoders, sense amplifiers, and address control logic - enabling deterministic 35ns access timing across all densities. It requires strict VCC-following initialization of control signals and features magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16 Mbit (1,048,576 × 16 organization) |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB# control |
| Read/Write Cycle Time | 35 ns minimum - enables SRAM-compatible timing in legacy bus designs |
| Supply Voltage | 2.7 V – 3.6 V - compatible with 3.3V industrial logic rails |
| Operating Temperature | –40°C to +85°C - qualified for industrial control and factory automation environments |
| Data Retention | 10 years at 105°C - ensures long-term data integrity without backup power |
| Endurance | 10¹⁴ write cycles - eliminates wear-out concerns in high-frequency logging applications |
| Package | 54-pin TSOP (10 mm × 22 mm) - surface-mount compatible with standard reflow profiles |
Pinout & Package
54-pin TSOP package (10 mm × 22 mm), RoHS-compliant, designed for industrial thermal and mechanical reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable input | Active-low global enable; must follow VCC during power-up/down to prevent corruption |
| G# | Output Enable input | Active-low control for DQ[15:0] output drivers during read operations |
| W# | Write Enable input | Active-low signal determining direction of DQ bus: Low = write, High = read |
| UB# | Upper Byte Enable | Active-low control enabling DQ[15:8]; allows partial-word writes without disturbing lower byte |
| LB# | Lower Byte Enable | Active-low control enabling DQ[7:0]; enables independent lower-byte access |
| ADDR[19:0] | Address inputs | 20-bit address bus supporting full 16Mbit addressing (1,048,576 words × 16 bits) |
| DQ[15:0] | Bidirectional data I/O | x16 data bus with Hi-Z control; supports simultaneous upper/lower byte reads/writes |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; no separate I/O or core voltage rails required |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | 35ns read/write timing with no write delay or erase cycles - drop-in replacement for PSRAM in existing designs |
| pMTJ STT-MRAM technology | 40nm node enabling high density, low power (1.7 mA standby), and radiation-tolerant operation |
| Byte-selective write capability | Independent UB#/LB# control allows 8-bit updates without reading-modifying-writing full 16-bit words |
| Industrial temperature support | Validated operation from –40°C to +85°C with guaranteed 10-year data retention at 105°C |
| Magnetic field immunity | Withstands 24,000 A/m fields during both read and write - suitable for motor drive and power electronics proximity |
Applications
| Factory Automation Controller | Medical Diagnostic Imaging System |
|---|---|
Use Scenario: Real-time motion control PLC storing position history, calibration tables, and fault logs across power cycles. IC Role / Device Role / Timing Role: Non-volatile program/data memory replacing battery-backed SRAM or slow NOR Flash. Use Value: Eliminates battery maintenance and enables instant recovery after brownout - critical for ISO 13849 safety compliance. |
Use Scenario: Ultrasound or MRI subsystem caching waveform buffers and configuration parameters between imaging sessions. IC Role / Device Role / Timing Role: High-speed, endurance-critical frame buffer and setup register storage. Use Value: Sustains >10¹⁴ write cycles over lifetime - avoids data loss during repeated image acquisition sequences. |
| Smart Energy Meter | Industrial Network Router |
Use Scenario: Tamper-resistant storage of tariff schedules, consumption history, and firmware update staging in ANSI C12.22-compliant meters. IC Role / Device Role / Timing Role: Secure, long-retention memory for regulatory audit logs and cryptographic keys. Use Value: 10-year data retention at 105°C meets IEC 62056-21 thermal aging requirements without external capacitors. |
Use Scenario: Storing routing tables, port configurations, and packet buffering metadata in DIN-rail mounted industrial Ethernet switches. IC Role / Device Role / Timing Role: Low-latency configuration memory accessed during link-up negotiation and failover events. Use Value: 35ns access enables sub-microsecond table lookups - improving convergence time in ring topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XIT | 8Mbit density, 45ns timing, SOIC-44 package; uses nvSRAM architecture with internal capacitor backup | Limited to 8Mbit; requires external capacitor recharge management; lower endurance (1 million cycles) | Select when board space constraints favor SOIC-44 and 8Mbit capacity suffices |
| Infineon F-RAM FM28V202A-40-TG | 2Mbit density, 40ns timing, TSOP-44; ferroelectric RAM with unlimited endurance but lower density | Max 2Mbit; lacks byte-select write; higher standby current (5 µA vs 1.7 mA) | Prefer for ultra-high-cycle logging where density < 4Mbit is acceptable |
Compared with M3016316045NX0ITBR, the Cypress alternative offers smaller footprint but half the density and capacitor-dependent reliability, while the Infineon F-RAM delivers infinite endurance at the cost of significantly reduced capacity and no byte-select capability - making M3016316045NX0ITBR optimal for 16Mbit industrial applications requiring both speed and persistence.
Availability
M3016316045NX0ITBR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for M3016316045NX0ITBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy NOR Flash in mission-critical industrial systems demanding instant-write non-volatility, high endurance, and extended temperature operation.
FAQ
What is the operating voltage range for M3016316045NX0ITBR?
M3016316045NX0ITBR operates across a single 2.7 V to 3.6 V supply rail. This range aligns with standard 3.3 V industrial logic interfaces and eliminates need for dual-voltage regulation. The device maintains full 35 ns timing specification across the entire voltage window, and its VWI (write inhibit) threshold is guaranteed between 2.1 V and 2.5 V - ensuring reliable write blocking during brownout conditions. All DC and AC characteristics in the datasheet are validated within this range.
Does M3016316045NX0ITBR require a backup battery or capacitor?
No, M3016316045NX0ITBR does not require any external backup component. As a true MRAM device, it retains data indefinitely without power due to magnetic storage elements. Unlike nvSRAM or battery-backed SRAM, there is no capacitor to recharge or battery to replace - eliminating maintenance, leakage, and end-of-life failure modes. Data retention is specified at 10 years at 105°C, verified through accelerated life testing per JEDEC standards.
How many address pins does M3016316045NX0ITBR use?
M3016316045NX0ITBR uses 20 address pins (ADDR[19:0]) to access its full 16 Mbit (1,048,576 × 16) memory array. This matches the 20-bit addressing requirement for 1 Mword capacity. The pinout is fixed for the 54-pin TSOP package and fully documented in Figure 2 and Table 3 of the datasheet. No address multiplexing or bank selection is required - all addresses are presented in parallel on every cycle.
What is the maximum magnetic field tolerance of M3016316045NX0ITBR?
M3016316045NX0ITBR is rated for continuous exposure to magnetic fields up to 24,000 A/m during both read and write operations - verified per Table 9 and Table 11 in the datasheet. This level exceeds typical industrial environments near motors, transformers, or solenoids. The pMTJ STT-MRAM cell design inherently resists field-induced bit flips, and no derating or shielding is required for operation in such settings.
Is M3016316045NX0ITBR pin-compatible with other densities in the M3xxx316 family?
M3016316045NX0ITBR shares identical pinout, signal assignment, and timing behavior with M3004316, M3008316, and M3032316 in the same 54-pin TSOP package variant (TB). All use ADDR[19:0], DQ[15:0], and identical control signals (E#, G#, W#, UB#, LB#). However, 4Mbit devices use only ADDR[17:0], and 32Mbit devices require ADDR[20:0] - meaning PCB layout must accommodate the full 20-bit bus to ensure forward compatibility across densities.
M3016316045NX0ITBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3016316045NX0ITBR FAQ
1.How can I place an order for M3016316045NX0ITBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316045NX0ITBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316045NX0ITBR reliable?
The price and inventory of M3016316045NX0ITBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316045NX0ITBR is usually 5 days.
3.What payment methods are accepted for M3016316045NX0ITBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316045NX0ITBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316045NX0ITBR?
M3016316045NX0ITBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316045NX0ITBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316045NX0ITBR?
For technical support, including M3016316045NX0ITBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316045NX0ITBR requirements.
6.How does Aetrix verify that M3016316045NX0ITBR is sourced from the original manufacturer or authorized distributors?
All M3016316045NX0ITBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316045NX0ITBR meets industry standards.
7.What is the process for return or replacement of M3016316045NX0ITBR?
All M3016316045NX0ITBR units undergo pre-shipment inspection (PSI). If there is an issue with M3016316045NX0ITBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316045NX0ITBR part is unused and in its original packaging.
Return procedure for M3016316045NX0ITBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316045NX0ITBR Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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