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Renesas M3016316045NX0ITBY
- Part No.:
- M3016316045NX0ITBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3016316045NX0ITBY.pdf
- Description:
- IC RAM 16MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,614
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Product details
Overview
M3016316045NX0ITBY from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers non-volatile, SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3016316045NX0ITBY datasheet, M3016316045NX0ITBY pinout, M3016316045NX0ITBY application, or M3016316045NX0ITBY equivalent, this page provides verified technical context, package mapping, timing behavior, endurance specs, and validated alternatives for industrial embedded memory selection.
Technical Context
The M3016316045NX0ITBY implements STT-MRAM technology using a 40nm pMTJ cell array, enabling true random-access reads/writes without erase cycles. Its parallel asynchronous interface uses E#, G#, W#, UB#, LB#, ADDR[19:0], and DQ[15:0] to support byte- and word-level operations with deterministic 45ns timing.
It operates in two primary modes: write mode (E# and W# low, G# high) and read mode (E# and G# low, W# high), with separate upper/lower byte enables for flexible data transfer. Power-up initialization requires E#, W#, and G# to track VCC, and write inhibition activates below 2.1V (Vwi).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16Mbit (1,048,576 × 16 organization) |
| Interface | Parallel asynchronous x16 - no clock required; compatible with legacy SRAM-based controllers |
| Read/Write Cycle Time | 45ns - enables direct replacement of 45ns SRAM or PSRAM in latency-critical systems |
| Supply Voltage | 2.7V–3.6V - supports single 3.3V rail with ±10% tolerance; no separate I/O voltage needed |
| Operating Temperature | −40°C to +85°C - qualified for industrial control cabinets and factory-floor environments |
| Data Retention | 1,000 years at 85°C - ensures firmware and calibration data persistence over full product lifecycle |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling overhead and supports continuous logging |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), surface-mount, industrial-grade plastic body with lead-free RoHS/REACH compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent corruption |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; high-Z when inactive |
| W# | Write Enable | Active-low write strobe; low = write, high = read; determines operation mode with E# |
| UB# | Upper Byte Enable | Active-low select for DQ[15:8]; enables partial-word writes without disturbing lower byte |
| LB# | Lower Byte Enable | Active-low select for DQ[7:0]; used independently or with UB# for full-word access |
| ADDR[19:0] | Address Inputs | 20-bit address bus for 16Mbit addressing (1,048,576 locations); no internal address latching |
| DQ[15:0] | Bidirectional Data Bus | x16 data path; high-impedance when E#, G#, or W# inactive per mode table |
| VCC / VSS | Power / Ground | Single 3.3V supply; decoupling required within 10mm of pins 27 and 42 per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) behavior | SRAM-compatible timing (45ns R/W) with non-volatility - eliminates backup batteries and external EEPROM |
| STT-MRAM cell technology | 40nm perpendicular magnetic tunnel junction - enables infinite endurance and immunity to radiation-induced bit flips |
| Byte-selectable write architecture | Independent UB#/LB# controls allow partial-word writes - reduces bus traffic and system-level power consumption |
| Industrial thermal robustness | θJA = 52.78°C/W (54-pin TSOP) - validated for sustained operation at 85°C ambient with standard PCB copper |
| Magnetic field immunity | Withstands 24,000 A/m during read/write - suitable for proximity to motors, solenoids, and transformers |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Real-time logging of sensor inputs, motion profiles, and fault events in programmable logic controllers with no downtime for save operations. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory replacing battery-backed SRAM; serves as persistent register file with 45ns random access. Use Value: Eliminates battery maintenance and failure risk while sustaining microsecond-level determinism during power loss or reset sequences. | Use Scenario: Storing calibration coefficients, image buffer metadata, and DICOM header templates in portable ultrasound and X-ray units. IC Role / Device Role / Timing Role: High-reliability configuration store interfaced directly to ARM Cortex-A/M cores via parallel bus; retains data across cold starts. Use Value: Guarantees immediate availability of critical imaging parameters on boot-no delay for EEPROM initialization or flash wear leveling. |
| Smart Energy Meters | Industrial Network Routers |
Use Scenario: Recording tamper events, billing cycle snapshots, and firmware update staging in ANSI C12.22-compliant meters deployed outdoors. IC Role / Device Role / Timing Role: Secure, long-retention data vault; withstands −40°C to +85°C cycling and 10k+ meter reboots/year. Use Value: Meets 10-year data retention requirement at 85°C without derating-validated per Table 16 (1,000 years @ 85°C). | Use Scenario: Caching routing tables, MAC address learning entries, and QoS policy rules in DIN-rail mounted industrial Ethernet switches. IC Role / Device Role / Timing Role: Low-latency packet metadata store accessed concurrently by multiple ASIC engines via shared parallel bus. Use Value: Enables sub-100ns lookup updates without stalling the forwarding pipeline-critical for deterministic TSN traffic handling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XI | 8Mbit density, same 45ns timing, 54-pin TSOP, but uses nvSRAM with internal lithium battery | Requires battery management circuitry and periodic replacement; limited to 10-year battery life | Select when legacy nvSRAM footprint compatibility is mandatory and battery servicing is acceptable |
| Infineon F-RAM FM28V20A-55-TG | 16Mbit density, 55ns timing, 48-ball FBGA only, ferroelectric RAM with 10¹⁴ endurance | No magnetic immunity spec; not rated for >85°C ambient; incompatible pinout and voltage (2.7–3.6V vs. 3.0V nominal) | Select for space-constrained designs needing FBGA and where magnetic fields are absent |
Compared with CY14B108L-BA45XI and FM28V20A-55-TG, the M3016316045NX0ITBY offers higher density in the same 54-pin TSOP footprint, eliminates battery dependency, and provides certified magnetic immunity-making it optimal for harsh industrial edge nodes where reliability and maintenance-free operation are critical.
Availability
M3016316045NX0ITBY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, smart metering, and industrial networking requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for M3016316045NX0ITBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems-delivering true non-volatility without compromise on speed, endurance, or temperature resilience.
FAQ
What is the exact memory density and organization of the M3016316045NX0ITBY?
The M3016316045NX0ITBY is a 16Mbit (16,777,216-bit) MRAM device organized as 1,048,576 words × 16 bits. This matches the "016" segment in its part number and is confirmed in Table 1 (Memory Array Organization) and Page 4 (General Description) of the official Renesas datasheet dated June 27, 2023.
Does the M3016316045NX0ITBY require a backup battery or capacitor for data retention?
No, the M3016316045NX0ITBY does not require any backup battery or capacitor. As a magneto-resistive RAM, it retains data inherently upon power removal. Its non-volatility is intrinsic to the STT-MRAM cell structure, with 1,000-year data retention guaranteed at 85°C per Table 16 - eliminating all external hold-up components required by nvSRAM or battery-backed SRAM.
Which package type and pin count does the M3016316045NX0ITBY use?
The M3016316045NX0ITBY uses a 54-pin TSOP package (10mm × 22mm), as indicated by the "TB" code in its ordering system (Page 5) and confirmed in the Valid Combinations table (Page 6) and Package Options section (Page 9). This package supports densities from 4Mb to 16Mb and is distinct from the 44-pin TSOP (TA) and 48-ball FBGA (BC) variants.
What are the valid operating voltage and temperature ranges for the M3016316045NX0ITBY?
The M3016316045NX0ITBY operates from 2.7V to 3.6V (VCC) and is rated for the industrial temperature range of −40°C to +85°C, denoted by "0I" in its part number suffix. These values are specified in Table 6 (Recommended Operating Conditions) and validated across all AC/DC electrical characteristics in the June 27, 2023 datasheet.
How does the M3016316045NX0ITBY handle power-up and power-down sequencing?
The M3016316045NX0ITBY requires E#, W#, and G# signals to track VCC during both power-up and power-down (Page 15). Specifically, these control signals must remain stable and follow VCC ramping; violation risks data corruption. The device mandates a minimum 1ms tPU delay after VCC exceeds 2.7V before first instruction (Table 5), and write operations are inhibited below Vwi = 2.1V.
M3016316045NX0ITBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3016316045NX0ITBY FAQ
1.How can I place an order for M3016316045NX0ITBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316045NX0ITBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316045NX0ITBY reliable?
The price and inventory of M3016316045NX0ITBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316045NX0ITBY is usually 5 days.
3.What payment methods are accepted for M3016316045NX0ITBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316045NX0ITBY transactions.
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4.How is shipping managed for M3016316045NX0ITBY?
M3016316045NX0ITBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316045NX0ITBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316045NX0ITBY?
For technical support, including M3016316045NX0ITBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316045NX0ITBY requirements.
6.How does Aetrix verify that M3016316045NX0ITBY is sourced from the original manufacturer or authorized distributors?
All M3016316045NX0ITBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316045NX0ITBY meets industry standards.
7.What is the process for return or replacement of M3016316045NX0ITBY?
All M3016316045NX0ITBY units undergo pre-shipment inspection (PSI). If there is an issue with M3016316045NX0ITBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316045NX0ITBY part is unused and in its original packaging.
Return procedure for M3016316045NX0ITBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316045NX0ITBY Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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