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Renesas M3016316045NX0PBCY
- Part No.:
- M3016316045NX0PBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3016316045NX0PBCY.pdf
- Description:
- IC RAM 16MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,846
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Product details
Overview
M3016316045NX0PBCY from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, enabling fast, reliable data logging in real-time control systems.
For engineers reviewing the M3016316045NX0PBCY datasheet, M3016316045NX0PBCY pinout, M3016316045NX0PBCY application, or M3016316045NX0PBCY equivalent, this page provides verified technical context, package mapping, timing behavior, byte-enable operation, and validated alternatives for industrial memory replacement scenarios.
Technical Context
This MRAM implements spin-transfer torque (STT) technology on a 40nm pMTJ process, supporting true random-access reads and writes without erase cycles. Its parallel x16 interface uses standard asynchronous control signals (E#, G#, W#, UB#, LB#) and 20-bit addressing (ADDR[19:0]) for 1,048,576 × 16 organization.
Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down; write inhibition activates below Vwi = 2.1–2.5V. The device guarantees 10¹⁴ write cycles and 10-year data retention at 105°C - enabled by magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16Mbit (1,048,576 × 16 organization) - supports compact firmware storage and real-time data buffers without block management overhead. |
| Access Time | 45ns read/write cycle - enables direct replacement of legacy PSRAM or low-latency NOR in microcontroller-based systems. |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and tolerant of brownout conditions down to 2.1V (Vwi). |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive ECUs, factory automation controllers, and medical diagnostics hardware. |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling firmware and enables byte-level logging at kHz rates over 10+ years. |
| Data Retention | 10 years at 105°C - ensures data integrity across full thermal life of industrial equipment without backup power or capacitors. |
| Package | 48-ball FBGA (10mm × 10mm) - surface-mount compatible with high-density PCB layouts and automated assembly processes. |
Pinout & Package
48-ball FBGA (10mm × 10mm, balls-down, top view) with 3.3V-compatible I/Os and dedicated byte-enable signaling for x16 data bus segmentation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing to prevent undefined state on power-up/down. |
| G# | Output Enable | Active-low control for DQ[15:0] drivers; held high during write, low during read to activate output buffers. |
| W# | Write Enable | Active-low signal that determines direction of DQ bus: low = write, high = read - no separate read/write command register. |
| UB# / LB# | Upper/Lower Byte Enable | Independent active-low controls for DQ[15:8] and DQ[7:0]; enable partial-word writes without masking logic in host controller. |
| ADDR[19:0] | Address Inputs | 20-bit address bus supporting full 16Mbit addressing; no internal address latching - host must hold stable during E#/W# transitions. |
| DQ[15:0] | Bidirectional Data Bus | x16 parallel I/O with Hi-Z control via E#/G#/W#; supports simultaneous upper/lower byte access using UB#/LB#. |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) interface | Direct drop-in replacement for volatile PSRAM in existing 35/45ns parallel memory designs - no protocol translation or firmware changes required. |
| 40nm pMTJ STT-MRAM technology | Enables 10¹⁴ endurance and 10-year data retention at 105°C while maintaining low 20mA typical write current and 1.7mA standby current. |
| Byte-selectable write capability | UB#/LB# pins allow independent 8-bit writes to upper or lower byte lanes - reduces bus contention and eliminates need for external byte masking logic. |
| Magnetic field immunity | Rated for 24,000 A/m exposure during both read and write - suitable for deployment near motors, transformers, and high-current conductors without shielding. |
| Industrial-plus temperature grade | Qualified from −40°C to +105°C with guaranteed 45ns timing - supports extended thermal cycling in sealed enclosures and uncooled edge computing nodes. |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Storing real-time sensor calibration coefficients and fault logs in programmable logic controllers operating continuously in uncooled cabinets. IC Role / Device Role / Timing Role: Non-volatile memory buffer interfacing directly to ARM Cortex-M7 MCU via parallel bus; retains critical configuration across unexpected power loss. Use Value: Eliminates supercapacitor backup circuitry and firmware wear-leveling routines while guaranteeing 10¹⁴ write cycles for daily calibration updates over 15-year product lifetime. |
Use Scenario: Capturing raw image frame metadata and DICOM header information during ultrasound or MRI scan sequences where power interruption must not corrupt diagnostic records. IC Role / Device Role / Timing Role: High-reliability parallel memory co-located with FPGA-based image acquisition engine; accepts burst writes at 22 MB/s (45ns cycle × 16-bit bus). Use Value: Ensures zero data loss during emergency shutdowns and meets IEC 62304 Class C software safety requirements via deterministic 45ns write latency and 10-year retention at 105°C ambient. |
| Smart Energy Meters | Industrial Network Routers |
Use Scenario: Recording tamper events, tariff switching timestamps, and consumption snapshots in ANSI C12.22-compliant meters deployed in outdoor substations. IC Role / Device Role / Timing Role: Primary non-volatile storage for time-critical billing data; accessed by dual-core RISC-V SoC via parallel interface with byte-enable granularity. Use Value: Withstands −40°C to +105°C thermal cycling and magnetic fields from nearby CTs/PTs while delivering 10¹⁴-cycle endurance for hourly metering logs over 20+ years. |
Use Scenario: Storing routing table snapshots and BGP session state in carrier-grade Ethernet switches requiring sub-millisecond failover after power restoration. IC Role / Device Role / Timing Role: Fast-boot non-volatile memory holding critical forwarding plane configuration; initialized within 1ms of VCC stabilization per tPU specification. Use Value: Reduces cold-start recovery time from seconds to <10ms by eliminating NOR flash erase/program delays - enabling hitless switchover in metro aggregation nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XI | 8Mbit density, 45ns access, SOIC-44 package; uses nvSRAM architecture with internal lithium battery backup. | Limited to 8Mbit and requires battery maintenance; unsuitable for battery-free or long-life deployments beyond 10 years. | Select only if board space allows SOIC-44 and system design accommodates periodic battery replacement. |
| Everspin MR25H10DFM | 1Mbit density, SPI interface, 8-pin SOIC; based on same STT-MRAM technology but serial-only communication. | Requires SPI-to-parallel bridge or MCU firmware rewrite; lacks UB#/LB# byte-select capability and x16 bandwidth. | Choose only for low-pin-count designs where 1Mbit capacity and serial interface are acceptable trade-offs. |
Compared with CY14B108L-BA45XI and MR25H10DFM, M3016316045NX0PBCY uniquely combines 16Mbit density, x16 parallel interface with byte enables, 45ns timing, and battery-free 10¹⁴-cycle endurance - making it the only drop-in solution for upgrading legacy PSRAM/NOR in high-reliability industrial controllers.
Availability
M3016316045NX0PBCY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, smart energy meters, industrial network routers, and embedded control modules requiring stable component supply across extended product lifecycles.
Supply support for M3016316045NX0PBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
M3016316045NX0PBCY belongs to Renesas' Parallel MRAM family, engineered to replace battery-backed SRAM and slow NOR flash in mission-critical industrial systems demanding instant-write non-volatility, extreme endurance, and wide-temperature reliability.
FAQ
What is the memory organization of M3016316045NX0PBCY?
M3016316045NX0PBCY features a 1,048,576 × 16 memory array organization - meaning it contains 1,048,576 addressable words, each 16 bits wide, totaling 16,777,216 bits (16Mbit). This structure supports efficient word-aligned access for microcontroller and FPGA interfaces without internal banking or page constraints.
Does M3016316045NX0PBCY require a backup battery or capacitor?
No, M3016316045NX0PBCY is inherently non-volatile and requires no backup battery, capacitor, or external energy storage. Data retention is achieved through magnetic tunnel junction (MTJ) physics, guaranteeing 10 years at 105°C without auxiliary power - unlike nvSRAM or FRAM alternatives.
What is the significance of the '0P' in M3016316045NX0PBCY?
The '0P' in M3016316045NX0PBCY denotes the industrial-plus temperature grade (−40°C to +105°C), distinguishing it from the standard industrial grade ('0I', −40°C to +85°C). This rating is validated across all electrical and timing specifications, including 45ns access time and 10¹⁴ endurance, at the full extended range.
Can M3016316045NX0PBCY be used as a direct replacement for standard PSRAM?
Yes, M3016316045NX0PBCY is designed as a pin-and-command compatible replacement for 45ns parallel PSRAM devices. Its identical x16 asynchronous interface, timing parameters, and control signal behavior (E#, G#, W#, UB#, LB#) allow drop-in substitution without PCB or firmware modification in most legacy designs.
What package type does M3016316045NX0PBCY use?
M3016316045NX0PBCY uses a 48-ball FBGA package (10mm × 10mm, balls-down, top view) with 0.8mm ball pitch. This compact, thermally efficient package supports high-density routing and automated assembly, and is distinct from the 44-pin TSOP (for 4Mb) and 54-pin TSOP (for 4–16Mb) variants in the same family.
M3016316045NX0PBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3016316045NX0PBCY FAQ
1.How can I place an order for M3016316045NX0PBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316045NX0PBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316045NX0PBCY reliable?
The price and inventory of M3016316045NX0PBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316045NX0PBCY is usually 5 days.
3.What payment methods are accepted for M3016316045NX0PBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3016316045NX0PBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3016316045NX0PBCY?
M3016316045NX0PBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316045NX0PBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316045NX0PBCY?
For technical support, including M3016316045NX0PBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316045NX0PBCY requirements.
6.How does Aetrix verify that M3016316045NX0PBCY is sourced from the original manufacturer or authorized distributors?
All M3016316045NX0PBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316045NX0PBCY meets industry standards.
7.What is the process for return or replacement of M3016316045NX0PBCY?
All M3016316045NX0PBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3016316045NX0PBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316045NX0PBCY part is unused and in its original packaging.
Return procedure for M3016316045NX0PBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316045NX0PBCY Tags
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