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Renesas M3016316045NX0PTBR
- Part No.:
- M3016316045NX0PTBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3016316045NX0PTBR.pdf
- Description:
- IC RAM 16MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,165
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Product details
Overview
M3016316045NX0PTBR from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, targeting real-time data logging in factory automation controllers.
For engineers reviewing the M3016316045NX0PTBR datasheet, M3016316045NX0PTBR pinout, M3016316045NX0PTBR application, or M3016316045NX0PTBR equivalent, this page provides verified technical context, package mapping, timing behavior, byte-enable control logic, and validated alternatives for high-reliability embedded memory replacement.
Technical Context
The M3016316045NX0PTBR implements STT-MRAM technology using a 40nm pMTJ cell array, enabling true random-access reads and writes without erase cycles. Its parallel x16 interface supports independent upper/lower byte enables (UB#/LB#), chip enable (E#), output enable (G#), and write enable (W#) for deterministic bus turnaround timing.
It operates in two distinct control modes: W#-controlled and E#-controlled write operations, both requiring G# = High during write and G# = Low during read. The device requires strict power sequencing-E#, W#, and G# must track VCC during power-up/down-and enforces write inhibition below Vwi = 2.1–2.5V to prevent corruption during brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16Mbit (1,048,576 × 16 organization) |
| Access Timing | 35ns read/write cycle time - enables direct SRAM drop-in replacement in legacy 35ns bus systems |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and tolerant of ±10% variation |
| Operating Temperature | −40°C to +105°C - qualified for extended industrial environments including motor drives and power meters |
| Data Retention | 10 years at 105°C - guaranteed non-volatility without backup power or refresh circuitry |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead required in NAND/EEPROM |
| Interface Type | Parallel asynchronous x16 - supports legacy microcontroller MPU buses without protocol translation |
| Package | 54-pin TSOP (10mm × 22mm) - surface-mount compatible with standard reflow profiles and test fixtures |
Pinout & Package
54-pin TSOP package (10mm × 22mm), industrial-plus grade, RoHS/REACH compliant. Pinout optimized for bidirectional x16 data transfer with separate upper/lower byte enables.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; disables all internal operations and reduces standby current to ≤3.5mA when high |
| G# | Output Enable | Active-low control for DQ[15:0] drivers; sets outputs to Hi-Z when high during write or idle |
| W# | Write Enable | Active-low signal that latches DQ[15:0] data on address transition; determines W#- or E#-controlled write mode |
| UB# | Upper Byte Enable | Active-low control for DQ[15:8]; allows partial-word writes without disturbing lower byte contents |
| LB# | Lower Byte Enable | Active-low control for DQ[7:0]; enables granular 8-bit updates in mixed-data-width systems |
| ADDR[19:0] | Address Inputs | 20-bit address bus supporting full 16Mbit addressing (1,048,576 locations); no address multiplexing required |
| DQ[15:0] | Bidirectional Data I/O | 16-bit parallel data path with 10pF input capacitance; supports simultaneous read/write with controlled bus turnaround |
Key Features
| Feature | Design Value |
|---|---|
| Persistent SRAM (P-SRAM) operation | Eliminates external battery/supercap backup while maintaining SRAM-compatible 35ns access and random read/write capability |
| STT-MRAM cell technology | 40nm pMTJ structure enables 10¹⁴ endurance and 10-year data retention at 105°C without degradation mechanisms seen in Flash/EEPROM |
| Byte-selectable write control | Independent UB#/LB# pins allow 8-bit updates to either half of the x16 bus without read-modify-write overhead |
| Power-track sequencing requirement | E#, W#, G# must follow VCC during power-up/down - ensures deterministic initialization and prevents metastability during voltage transitions |
| Magnetic immunity | Withstands up to 24,000 A/m fields during read/write - suitable for deployment near motors, transformers, and switching power supplies |
Applications
| Factory Automation PLCs | Multifunction Printers |
|---|---|
Use Scenario: Real-time logging of motion control parameters, sensor calibration offsets, and job history in programmable logic controllers operating continuously at 85–105°C ambient. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing volatile runtime variables that must survive unexpected power loss without delay. Use Value: Eliminates supercapacitor-based backup circuitry while guaranteeing sub-35ns write latency and 10¹⁴-cycle reliability over 15+ year equipment life. |
Use Scenario: Storing firmware patches, print job metadata, and consumables usage counters across thousands of daily power cycles in office printers. IC Role / Device Role / Timing Role: Parallel boot memory and configuration store interfaced directly to ARM Cortex-M7 application processors via 16-bit bus. Use Value: Enables zero-latency firmware updates and instant resume after power interruption-no wait for EEPROM programming or Flash erase delays. |
| Industrial Power Meters | Medical Diagnostic Imaging Systems |
Use Scenario: Capturing high-resolution energy waveform snapshots at 16kHz sampling rate with timestamped event logs in ANSI C12.20-compliant smart meters. IC Role / Device Role / Timing Role: High-speed circular buffer memory buffering ADC samples before compression and secure transmission. Use Value: Sustains continuous 35ns write bursts for >10 years at 105°C without bit rot or endurance exhaustion-critical for revenue-grade metering compliance. |
Use Scenario: Buffering DICOM image headers, calibration coefficients, and last-known-safe settings in portable ultrasound and X-ray units subject to frequent thermal cycling. IC Role / Device Role / Timing Role: Fail-safe configuration store retaining critical safety parameters even after battery depletion or main power failure. Use Value: Meets IEC 62304 Class B software requirements by ensuring deterministic non-volatile storage without refresh or wear leveling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B116L-BA25XI | 16Mbit nvSRAM with 25ns access, 3.3V-only (3.135–3.465V), 44-pin SOIC package | Limited to −40°C to +85°C; lacks magnetic immunity spec; requires external capacitor for auto-store | Select when fastest possible access (<25ns) is required and industrial-plus temp range is not needed |
| Infineon Q8020160100000 | 16Mbit Everspin MRAM, 35ns, 2.7–3.6V, 48-ball FBGA (10mm × 10mm), −40°C to +105°C | Same density/timing/temp but different pinout (FBGA vs TSOP); no 54-pin TSOP option available | Select when board space is constrained and FBGA rework capability exists; verify layout compatibility |
Compared with CY14B116L-BA25XI and Q8020160100000, the M3016316045NX0PTBR uniquely combines 54-pin TSOP packaging, industrial-plus temperature qualification, and explicit 24,000 A/m magnetic immunity-making it the only choice for high-noise, thermally demanding, and space-constrained industrial control designs requiring proven field reliability.
Availability
M3016316045NX0PTBR is available at Aetrix Electronics and suitable for factory automation PLCs, multifunction printers, industrial power meters, medical diagnostic imaging systems, and smart grid infrastructure requiring stable component supply across extended product lifecycles.
Supply support for M3016316045NX0PTBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3016316045NX0PTBR belongs to Renesas' parallel MRAM product line, engineered to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems where data persistence, speed, and long-term reliability are non-negotiable.
FAQ
What is the maximum operating temperature for the M3016316045NX0PTBR?
The M3016316045NX0PTBR is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC JESD22-A108 and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. Operation beyond 105°C risks exceeding junction temperature limits and invalidating data retention guarantees.
Does the M3016316045NX0PTBR require an external backup power source?
No, the M3016316045NX0PTBR does not require any external backup power source. As a magneto-resistive RAM, it retains data inherently without batteries, supercapacitors, or charge pumps. Its non-volatility is guaranteed for 10 years at 105°C per Table 16, eliminating backup circuitry and associated failure modes.
Can the M3016316045NX0PTBR be used as a direct replacement for standard SRAM in existing designs?
Yes, the M3016316045NX0PTBR supports SRAM-compatible timing (35ns read/write) and pinout (54-pin TSOP), enabling drop-in replacement in many legacy SRAM designs. However, designers must ensure E#, W#, and G# signals track VCC during power-up/down per Section 15 of the datasheet to avoid initialization faults.
What is the write endurance rating of the M3016316045NX0PTBR?
The M3016316045NX0PTBR guarantees ≥10¹⁴ write cycles per memory location, as specified in Table 16 of the Renesas datasheet. This exceeds typical SRAM endurance by orders of magnitude and eliminates the need for wear-leveling algorithms required in Flash or EEPROM-based solutions.
Is the M3016316045NX0PTBR susceptible to magnetic fields in industrial environments?
No-the M3016316045NX0PTBR is characterized for magnetic immunity up to 24,000 A/m during both read and write operations (Table 9 and Table 11). This exceeds typical industrial magnetic noise levels and ensures reliable operation near motors, solenoids, and power converters without shielding.
M3016316045NX0PTBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3016316045NX0PTBR FAQ
1.How can I place an order for M3016316045NX0PTBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316045NX0PTBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316045NX0PTBR reliable?
The price and inventory of M3016316045NX0PTBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316045NX0PTBR is usually 5 days.
3.What payment methods are accepted for M3016316045NX0PTBR?
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4.How is shipping managed for M3016316045NX0PTBR?
M3016316045NX0PTBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316045NX0PTBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316045NX0PTBR?
For technical support, including M3016316045NX0PTBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316045NX0PTBR requirements.
6.How does Aetrix verify that M3016316045NX0PTBR is sourced from the original manufacturer or authorized distributors?
All M3016316045NX0PTBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316045NX0PTBR meets industry standards.
7.What is the process for return or replacement of M3016316045NX0PTBR?
All M3016316045NX0PTBR units undergo pre-shipment inspection (PSI). If there is an issue with M3016316045NX0PTBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316045NX0PTBR part is unused and in its original packaging.
Return procedure for M3016316045NX0PTBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316045NX0PTBR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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