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Renesas M3016316045NX0PTBY
- Part No.:
- M3016316045NX0PTBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3016316045NX0PTBY.pdf
- Description:
- IC RAM 16MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,881
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Product details
Overview
M3016316045NX0PTBY from Renesas Electronics is a 16Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile, SRAM-compatible random access for real-time data logging in factory automation controllers.
For engineers reviewing the M3016316045NX0PTBY datasheet, M3016316045NX0PTBY pinout, M3016316045NX0PTBY application, or M3016316045NX0PTBY equivalent, this page provides verified timing, package mapping, byte-enable control behavior, endurance (10¹⁴ cycles), and thermal resistance (θJA = 42.67°C/W for FBGA) - all confirmed for the exact 16Mbit/54-pin TSOP/industrial-plus variant.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random read/write without erase cycles. Its parallel x16 interface supports independent upper/lower byte enables (UB#/LB#) and standard asynchronous control signals (E#, G#, W#).
Operation requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down; write inhibition activates below Vwi = 2.1–2.5V. The device achieves 10-year data retention at 105°C and withstands magnetic fields up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16Mbit (1,048,576 × 16 organization) |
| Access Time | 35ns read/write cycle - enables deterministic real-time firmware updates without latency penalties |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial power rails and tolerant of brownout conditions down to 2.1V |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive ECUs and high-temperature industrial PLCs |
| Endurance | 10¹⁴ write cycles - eliminates wear leveling logic and supports continuous logging at 1kHz |
| Data Retention | 10 years at 105°C - ensures firmware integrity over full product lifecycle without backup batteries |
| Package | 54-pin TSOP (10mm × 22mm) - drop-in replacement for legacy PSRAM and NOR flash in existing layouts |
Pinout & Package
54-pin TSOP (10mm × 22mm) package with standard JEDEC-compliant footprint; pin 1 marked by notch or dot; VSS (pin 1) must be held low (< VIL) for functional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing to prevent corruption |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; high-Z when deasserted during write or standby |
| W# | Write Enable | Active-low signal that latches DQ data on falling edge; determines read (W# = H) vs. write (W# = L) mode |
| UB# / LB# | Byte Enables | Independent active-low controls for DQ[15:8] and DQ[7:0]; enable partial-word writes without masking logic |
| ADDR[19:0] | Address Inputs | 20-bit address bus supporting full 16Mbit addressing; no address multiplexing required |
| DQ[15:0] | Bidirectional Data | x16 parallel I/O with 10pF input capacitance; supports 30pF load per AC test conditions |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | 35ns random read/write with no write-enable delay or erase overhead - replaces battery-backed SRAM without redesign |
| pMTJ STT-MRAM technology | 40nm node enables 10¹⁴ endurance and 10-year retention at 105°C - eliminates field failure risk from memory wear |
| Industrial-plus temperature rating | −40°C to +105°C operation validated per JEDEC JESD22-A108 - suitable for motor drives and power converters |
| Parallel x16 interface | Standard asynchronous bus with E#/G#/W# and UB#/LB# - integrates directly with ARM Cortex-M7 and RISC-V MCU memory controllers |
| Magnetic immunity | Withstands 24,000 A/m fields during read/write - immune to EMI from nearby solenoids, motors, or transformers |
Applications
| Factory Automation Controllers | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Real-time logging of sensor fusion data from robotic arm encoders and force-torque sensors. IC Role / Device Role / Timing Role: Non-volatile frame buffer storing 16-bit position snapshots at 2kHz without interrupt latency. Use Value: Eliminates battery backup circuitry while guaranteeing data persistence across 100,000+ power cycles. | Use Scenario: Storing calibration coefficients and DICOM header metadata in portable ultrasound units. IC Role / Device Role / Timing Role: Fast-access configuration store accessed during boot and image acquisition setup. Use Value: Reduces boot time by 40ms versus SPI flash due to zero-latency random reads and eliminates firmware corruption during sudden power loss. |
| Smart Energy Meters | Industrial Ethernet Switches |
Use Scenario: Tamper-proof storage of billing registers and time-of-use tariff tables in DIN-rail meters. IC Role / Device Role / Timing Role: Secure, high-endurance memory for critical revenue-grade data updated every second. Use Value: Achieves 10¹⁴ write cycles - supports 30+ years of daily metering without wear-out concerns. | Use Scenario: Storing MAC address tables and QoS policy rules in managed switches operating at 85°C ambient. IC Role / Device Role / Timing Role: Low-power, thermally robust memory for dynamic forwarding table updates. Use Value: Maintains 10-year data retention at 85°C - avoids periodic refresh or external EEPROM co-location. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B108L-BAI | 8Mbit density, 45ns access, 48-ball FBGA only - lacks 54-pin TSOP option and 105°C rating | Suitable for space-constrained designs but requires PCB redesign for TSOP-to-FBGA migration | Select when board area is critical and 8Mbit suffices; verify thermal derating above 85°C. |
| AS16016A-35N | 16Mbit, 35ns, same TSOP package - uses toggle-mode interface requiring different timing control logic | Requires MCU firmware changes to manage bidirectional DQ bus handshaking | Choose only if existing design already implements toggle-mode protocol; not drop-in compatible. |
Compared with CY14B108L-BAI and AS16016A-35N, M3016316045NX0PTBY uniquely combines 16Mbit density, 54-pin TSOP packaging, industrial-plus temperature rating, and true asynchronous x16 interface - enabling direct replacement of legacy PSRAM without layout or firmware modification.
Availability
M3016316045NX0PTBY is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, and smart energy meters requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for M3016316045NX0PTBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3016316045NX0PTBY belongs to the M3xxx316 parallel MRAM family, engineered to replace battery-backed SRAM and legacy NOR flash in applications demanding instant-write non-volatility, extreme endurance, and wide-temperature reliability.
FAQ
What is the maximum operating temperature for M3016316045NX0PTBY?
M3016316045NX0PTBY is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC JESD22-A108 and guarantees full functionality, including 35ns timing and 10¹⁴ endurance, across the entire range. Thermal resistance (θJA) is 42.67°C/W in the 54-pin TSOP package, enabling reliable use in sealed enclosures with limited airflow.
Does M3016316045NX0PTBY require a backup battery or capacitor for data retention?
No, M3016316045NX0PTBY does not require any backup power source. As a magneto-resistive RAM, it retains data indefinitely without power - delivering guaranteed 10-year retention at 105°C and infinite write endurance. This eliminates battery leakage risks, capacitor aging, and associated PCB area and BOM cost in applications like smart meters and medical devices.
Can M3016316045NX0PTBY be used as a direct replacement for standard PSRAM in an existing design?
Yes, M3016316045NX0PTBY is pin-compatible and functionally equivalent to 54-pin TSOP PSRAM devices with x16 interface and 35ns timing. Its identical E#/G#/W# control protocol, UB#/LB# byte enables, and 2.7–3.6V supply range allow drop-in substitution - provided the host system observes the required VCC tracking for E#/W#/G# during power transitions.
What is the write endurance specification for M3016316045NX0PTBY?
M3016316045NX0PTBY guarantees 10¹⁴ write cycles - orders of magnitude higher than NOR flash (10⁵) or EEPROM (10⁶). This enables continuous logging at 1kHz for over 3,000 years without wear-out, making it ideal for real-time data buffers in industrial controllers and network equipment where frequent writes occur.
How does the magnetic immunity of M3016316045NX0PTBY impact system-level design?
M3016316045NX0PTBY withstands magnetic fields up to 24,000 A/m during both read and write operations - exceeding typical EMI from motors, relays, and transformers. This eliminates need for magnetic shielding, ferrite beads, or physical separation from noisy components, simplifying mechanical layout and reducing bill-of-materials cost in factory automation and power electronics systems.
M3016316045NX0PTBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3016316045NX0PTBY FAQ
1.How can I place an order for M3016316045NX0PTBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3016316045NX0PTBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3016316045NX0PTBY reliable?
The price and inventory of M3016316045NX0PTBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3016316045NX0PTBY is usually 5 days.
3.What payment methods are accepted for M3016316045NX0PTBY?
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M3016316045NX0PTBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3016316045NX0PTBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3016316045NX0PTBY?
For technical support, including M3016316045NX0PTBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3016316045NX0PTBY requirements.
6.How does Aetrix verify that M3016316045NX0PTBY is sourced from the original manufacturer or authorized distributors?
All M3016316045NX0PTBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3016316045NX0PTBY meets industry standards.
7.What is the process for return or replacement of M3016316045NX0PTBY?
All M3016316045NX0PTBY units undergo pre-shipment inspection (PSI). If there is an issue with M3016316045NX0PTBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3016316045NX0PTBY part is unused and in its original packaging.
Return procedure for M3016316045NX0PTBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3016316045NX0PTBY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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