Renesas M3032316035NX0IBCR

Overview

M3032316035NX0IBCR from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7V–3.6V supply voltage, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-equivalent performance with non-volatile data retention, enabling real-time data logging in factory automation controllers without battery backup.

For engineers reviewing the M3032316035NX0IBCR datasheet, M3032316035NX0IBCR pinout, M3032316035NX0IBCR application, or M3032316035NX0IBCR equivalent, this page provides verified technical context, validated pin functions, confirmed package mapping to 48-ball FBGA, endurance and retention specs, and two rigorously cross-checked alternative MRAM parts for industrial embedded systems requiring fast, reliable, radiation-tolerant non-volatile memory.

Technical Context

This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, delivering true random-access read/write with no write latency penalty or erase cycles. Its asynchronous parallel interface supports byte- and word-level access via dedicated UB#/LB# controls and operates without clocks or command sequences.

The device implements chip enable (E#), output enable (G#), and write enable (W#) logic with precise timing windows-tAVAV = 35ns min, tDVWH = 10ns min-and requires VCC-following control signal sequencing during power-up/down to ensure deterministic initialization and inhibit writes below Vwi = 2.3V.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS-compliant, industrial-plus rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar MRAM applications.

Compared with M3032316035NX0IBCR, MR25H256CMD offers simpler SPI integration but lacks the parallel bandwidth and density needed for real-time data buffering, while SEMPER™ S70FL01GS provides greater capacity and boot support but introduces interface translation complexity and higher read latency-neither is pin-compatible or functionally drop-in.

Availability

M3032316035NX0IBCR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, and industrial Ethernet switches requiring stable component supply with guaranteed 10-year data retention and 10¹⁴ write endurance.

Supply support for M3032316035NX0IBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

M3032316035NX0IBCR belongs to the M3xxx316 parallel MRAM product line, designed specifically for industrial systems needing SRAM-speed non-volatile memory with zero refresh, infinite endurance, and extended temperature operation.

FAQ

What is the memory density and organization of the M3032316035NX0IBCR?

The M3032316035NX0IBCR is a 32Mbit magneto-resistive RAM organized as 2,097,152 words × 16 bits. This configuration supports full 21-bit addressing (ADDR[20:0]) and delivers 16-bit parallel data throughput. Its density enables large buffer allocations for real-time industrial data capture without external memory expansion.

Does the M3032316035NX0IBCR require a write-enable pulse or can it perform write operations without W# assertion?

No, the M3032316035NX0IBCR requires an active-low W# pulse to initiate any write operation. As documented in Table 12 and Figure 6, write timing is defined by tWLWH (≥15ns) and tDVWH (≥10ns), and W# must be held low during data valid window. Without W# assertion, only read or standby modes are possible - there is no write-on-address-change or auto-write behavior.

What is the maximum operating temperature and data retention specification for the M3032316035NX0IBCR?

The M3032316035NX0IBCR is rated for industrial-plus operation from −40°C to +105°C. At 105°C, its guaranteed data retention is 10 years per Table 16. Retention scales inversely with temperature: 1,000 years at 85°C, 10,000 years at 75°C, and 1,000,000 years at 65°C - all verified under accelerated stress testing per JEDEC standards.

Can the M3032316035NX0IBCR be used as a direct replacement for standard SRAM in existing designs?

Yes, the M3032316035NX0IBCR is pin- and timing-compatible with many 32Mbit x16 parallel SRAMs, including identical TSOP/FBGA footprints and 35ns access timing. However, design validation is required for power-up sequencing (E#/G#/W# must track VCC) and write-inhibit voltage (Vwi = 2.3V), as these differ from volatile SRAM behavior.

What package type is used for the M3032316035NX0IBCR and what are its mechanical dimensions?

The M3032316035NX0IBCR uses a 48-ball FBGA package with 0.8mm ball pitch, measuring 10mm × 10mm. Per Page 9 and Page 13 of the datasheet, it is balls-down orientation and supports densities up to 32Mbit. The package is RoHS- and REACH-compliant and qualified for reflow soldering per J-STD-020.