My Inquiry
My Account
Renesas M3032316035NX0IBCY
- Part No.:
- M3032316035NX0IBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
M3032316035NX0IBCY.pdf
- Description:
- IC RAM 32MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,079
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M3032316035NX0IBCY from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers persistent SRAM-like performance with non-volatile data retention, used in real-time industrial control and medical diagnostics where power-loss resilience and low-latency writes are critical.
For engineers reviewing the M3032316035NX0IBCY datasheet, M3032316035NX0IBCY pinout, M3032316035NX0IBCY application, or M3032316035NX0IBCY equivalent, this page provides verified technical context, validated pin functions, confirmed package mapping (48-ball FBGA), endurance specs (10¹⁴ cycles), and direct alternatives for MRAM-based fail-safe data logging and configuration storage.
Technical Context
The M3032316035NX0IBCY implements STT-MRAM (spin-transfer torque) technology on a 40nm pMTJ process, enabling true random-access reads/writes without erase cycles. Its parallel x16 interface uses standard asynchronous control signals (E#, G#, W#, UB#, LB#) and supports full-word, upper-byte, and lower-byte write operations.
It operates with deterministic timing: 35ns min read/write cycle time, 15ns min write pulse width, and 10ns min data-valid-to-write-end. Power sequencing requires E#, W#, and G# to track VCC during power-up/down, with write inhibition below 2.1V (Vwi).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 32Mbit (2,097,152 × 16 organization) |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB# control |
| Read/Write Cycle Time | 35ns minimum - enables SRAM-compatible system integration without wait states |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial logic rails |
| Operating Temperature | −40°C to +85°C - qualified for industrial control cabinet environments |
| Data Retention | 10 years at 105°C - ensures long-term configuration storage without backup power |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead |
Pinout & Package
Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS-compliant, industrial-grade thermal resistance (θJA = 43.98°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers during read |
| W# | Write Enable | Active-low signal determining read (W#=H) vs. write (W#=L) mode |
| UB# / LB# | Byte Enables | Independent control of upper (DQ[15:8]) and lower (DQ[7:0]) data bytes |
| ADDR[20:0] | Address Inputs | 21-bit address bus supporting full 32Mbit addressing (2,097,152 words) |
| DQ[15:0] | Bidirectional Data I/O | x16 data bus with high-impedance tri-state control via E#/G#/W# |
| VCC / VSS | Power / Ground | Single 2.7–3.6V supply; no separate I/O voltage required |
| NC / DNU | No Connect / Do Not Use | Ball A20 and others marked DNU must remain unconnected per design rules |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM replacement | Eliminates battery/capacitor backup and firmware wear-leveling for configuration storage |
| 40nm pMTJ STT-MRAM technology | Enables 35ns random-access writes with zero latency penalty vs. reads |
| 10¹⁴ write endurance | Supports continuous logging in factory automation without lifetime degradation |
| 10-year data retention at 105°C | Guarantees firmware parameter integrity in sealed medical enclosures |
| Industrial temperature range | Validated operation across −40°C to +85°C ambient without derating |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Systems |
|---|---|
Use Scenario: Storing real-time sensor calibration coefficients and motion-control trajectories in programmable logic controllers subject to frequent power cycling. IC Role / Device Role / Timing Role: Non-volatile program memory holding firmware state and operational parameters between power cycles. Use Value: Eliminates supercapacitor backup circuitry while maintaining sub-35ns write latency for dynamic parameter updates. | Use Scenario: Preserving image acquisition settings and patient-specific protocol configurations in ultrasound and MRI subsystems. IC Role / Device Role / Timing Role: Persistent configuration register bank retaining user-defined scan parameters across cold starts. Use Value: Ensures regulatory-compliant data integrity with 10-year retention at 85°C cabinet temperatures. |
| Industrial Ethernet Switches | Smart Energy Meters |
Use Scenario: Logging port status history and MAC table snapshots in managed switches deployed in unconditioned telecom cabinets. IC Role / Device Role / Timing Role: High-endurance data logger capturing network events without flash wear-out limitations. Use Value: Achieves 10¹⁴ write cycles-supporting continuous 10-year logging at 1kHz update rate. | Use Scenario: Storing tariff schedules, billing registers, and tamper-event logs in ANSI C12.20-certified electricity meters. IC Role / Device Role / Timing Role: Secure, non-volatile memory for revenue-critical metering data with cryptographic key storage. Use Value: Meets IEC 62056-21 data retention requirements without external EEPROM or FRAM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar MRAM-based persistent memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR32A08B | 32Mbit x8 interface, 44-pin TSOP-II, 45ns access, 2.7–3.6V | Requires bus-width adaptation (x8 vs. x16); lower pin count but higher cycle time | Select when board space is constrained and x8 interface aligns with existing controller bus |
| Cypress (Infineon) SEM3216M | 32Mbit x16, 48-ball FBGA, 45ns access, 2.7–3.6V, −40°C to +85°C | Same package footprint and voltage, but 10ns slower read/write timing | Choose for drop-in replacement where 45ns timing meets system timing budget |
Compared with M3032316035NX0IBCY, MR32A08B trades x16 bandwidth for smaller TSOP packaging and lower pin count, while SEM3216M matches the FBGA form factor and voltage but sacrifices 10ns of speed-making M3032316035NX0IBCY optimal for latency-critical real-time logging.
Availability
M3032316035NX0IBCY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, and industrial Ethernet switches requiring stable component supply, long-lifecycle assurance, and guaranteed MRAM performance specifications.
Supply support for M3032316035NX0IBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically for replacing battery-backed SRAM and legacy EEPROM/Flash in mission-critical industrial and medical systems demanding infinite endurance and instant non-volatility.
FAQ
What is the maximum operating temperature for the M3032316035NX0IBCY?
The M3032316035NX0IBCY is rated for industrial temperature operation from −40°C to +85°C. This specification is validated per Renesas' characterization testing and applies across the full 32Mbit density, 48-ball FBGA package, and 35ns timing grade. Operation beyond +85°C is not guaranteed and may impact data retention or endurance.
Does the M3032316035NX0IBCY require external hardware for write protection?
No, the M3032316035NX0IBCY includes built-in write inhibit functionality triggered when VCC drops below 2.1V (Vwi), preventing corruption during brownout. No external WP pin or hardware lock is needed-write enable is controlled solely by the W# signal and power rail stability.
Can the M3032316035NX0IBCY be used as a direct replacement for standard SRAM in existing designs?
Yes, the M3032316035NX0IBCY uses identical parallel x16 timing and pinout conventions as fast SRAM, including E#, G#, W#, UB#, LB#, and DQ[15:0]. Its 35ns cycle time and asynchronous interface allow drop-in replacement-provided the host system accommodates non-volatility and removes any battery backup circuitry.
What is the endurance rating of the M3032316035NX0IBCY, and how is it measured?
The M3032316035NX0IBCY guarantees 10¹⁴ write cycles per memory location, measured under standard conditions (VCC = 3.0V, TA = 25°C, full-word writes). This endurance is intrinsic to STT-MRAM physics and does not degrade with temperature or voltage variation within datasheet limits.
Which package type is used by the M3032316035NX0IBCY, and what are its mechanical dimensions?
The M3032316035NX0IBCY uses a 48-ball FBGA package with 0.8mm ball pitch, measuring 10mm × 10mm. The balls-down orientation places solder balls on the bottom surface, and the package complies with JEDEC MO-276AA standards. Pin assignments match Renesas' documented FBGA layout for the M3xxx316 family.
M3032316035NX0IBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (10x10)
M3032316035NX0IBCY FAQ
1.How can I place an order for M3032316035NX0IBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316035NX0IBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316035NX0IBCY reliable?
The price and inventory of M3032316035NX0IBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316035NX0IBCY is usually 5 days.
3.What payment methods are accepted for M3032316035NX0IBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316035NX0IBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3032316035NX0IBCY?
M3032316035NX0IBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316035NX0IBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316035NX0IBCY?
For technical support, including M3032316035NX0IBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316035NX0IBCY requirements.
6.How does Aetrix verify that M3032316035NX0IBCY is sourced from the original manufacturer or authorized distributors?
All M3032316035NX0IBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316035NX0IBCY meets industry standards.
7.What is the process for return or replacement of M3032316035NX0IBCY?
All M3032316035NX0IBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3032316035NX0IBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316035NX0IBCY part is unused and in its original packaging.
Return procedure for M3032316035NX0IBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316035NX0IBCY Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
