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Renesas M3032316035NX0ITBR
- Part No.:
- M3032316035NX0ITBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3032316035NX0ITBR.pdf
- Description:
- IC RAM 32MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,879
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Product details
Overview
M3032316035NX0ITBR from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (–40°C to +85°C). It delivers non-volatile, SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3032316035NX0ITBR datasheet, M3032316035NX0ITBR pinout, M3032316035NX0ITBR application, or M3032316035NX0ITBR equivalent, this page provides verified timing parameters, validated 54-pin TSOP package mapping, confirmed byte-enable control logic, and two industry-validated alternative MRAMs for industrial embedded systems requiring persistent low-latency memory.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random access with no erase-before-write requirement. Its parallel x16 interface supports independent upper/lower byte enables (UB#/LB#) and standard asynchronous control signals (E#, G#, W#).
Operation requires strict power sequencing: E#, G#, and W# must track VCC during power-up/down; write operations are inhibited below Vwi (2.1–2.5V). The device achieves 10¹⁴ write cycles and 10-year data retention at 105°C, with magnetic immunity up to 24,000 A/m during both read and write.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 32Mbit (2,097,152 × 16 organization) |
| Access Time | 35ns read/write cycle - enables deterministic real-time response without wait states |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and brownout tolerance |
| Operating Temp | –40°C to +85°C - qualified for industrial control cabinets and factory-floor environments |
| Data Retention | 10 years at 105°C - ensures long-term firmware/data integrity without backup power |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead in high-frequency logging |
| Interface | Parallel asynchronous x16 with UB#/LB# - supports byte-selective writes without full-word overhead |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, industrial-grade plastic body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent initialization failure |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; high during write to maintain Hi-Z state |
| W# | Write Enable | Active-low signal that gates write data flow; low during write, high during read |
| UB# / LB# | Byte Enables | Independent active-low controls for DQ[15:8] and DQ[7:0]; enable partial-word writes |
| ADDR[20:0] | Address Bus | 21-bit address input; all 21 pins used for 32Mbit density (A0–A20) |
| DQ[15:0] | Data I/O | Bidirectional x16 data bus; supports simultaneous upper/lower byte reads/writes |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; decoupling required per JEDEC guidelines for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists without power or capacitors - eliminates battery/SRAM+backup complexity |
| SRAM-compatible timing | 35ns read/write - integrates into legacy SRAM-based designs without timing redesign |
| pMTJ STT-MRAM technology | 40nm node - enables high density and low power (20mA typical write current) |
| Industrial temperature range | –40°C to +85°C - validated for uncontrolled ambient environments in PLCs and motor drives |
| Magnetic immunity | 24,000 A/m field tolerance - immune to common industrial EMI sources including solenoids and motors |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion controller storing position history and fault logs across power cycles. IC Role / Device Role / Timing Role: Non-volatile program/data memory replacing battery-backed SRAM or slow SPI Flash. Use Value: Eliminates battery replacement maintenance while sustaining 35ns write latency for sub-millisecond log updates. | Use Scenario: Portable ultrasound device capturing and archiving image frames during battery operation. IC Role / Device Role / Timing Role: High-speed frame buffer with instant power-loss recovery. Use Value: Guarantees zero data loss on sudden shutdown, leveraging 10¹⁴ endurance for daily multi-hour imaging sessions. |
| Smart Meter | Data Switches |
Use Scenario: Electricity meter recording consumption intervals and tamper events over 15+ year service life. IC Role / Device Role / Timing Role: Long-retention event logger interfacing directly to MCU's parallel bus. Use Value: Meets 10-year data retention spec at 85°C ambient without thermal derating or refresh cycles. | Use Scenario: Enterprise network switch maintaining forwarding tables and configuration state across reboots. IC Role / Device Role / Timing Role: Fast-access configuration store enabling sub-second failover recovery. Use Value: Reduces boot time by 400ms vs. NAND-based solutions due to zero-latency random access and no firmware overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR32A080128K | 32Mbit, 45ns access, 48-ball FBGA only - no TSOP option | Requires PCB redesign for FBGA footprint; higher thermal resistance (θJA = 43.98°C/W) | Choose when board space is constrained and FBGA is already used in design |
| Cypress/Infineon CY14B108N | 8Mbit density, 45ns access, same 54-pin TSOP package - lower capacity | Limited to smaller code/data footprints; insufficient for full firmware storage in complex edge devices | Choose only for cost-sensitive, low-density applications where 32Mbit is unnecessary |
Compared with M3032316035NX0ITBR, MR32A080128K trades TSOP compatibility for FBGA miniaturization, while CY14B108N sacrifices density and speed to match legacy footprint constraints - neither offers identical 32Mbit/35ns/TSOP capability.
Availability
M3032316035NX0ITBR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart meter applications requiring stable component supply across extended product lifecycles.
Supply support for M3032316035NX0ITBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically for industrial embedded systems needing reliable, fast, and truly non-volatile memory - bridging the gap between SRAM speed and Flash persistence without compromise.
FAQ
What is the maximum operating temperature for M3032316035NX0ITBR?
The M3032316035NX0ITBR is rated for industrial temperature range: –40°C to +85°C. This is confirmed in Table 17 of the datasheet under "Operating Temperature Range" and validated in thermal resistance testing (θJA = 52.78°C/W for 54-pin TSOP). Operation beyond +85°C risks violating the 10-year data retention guarantee at elevated junction temperatures.
Does M3032316035NX0ITBR require a backup battery or capacitor for data retention?
No, M3032316035NX0ITBR does not require any external backup component. As a magneto-resistive RAM, it retains data indefinitely without power - confirmed by its 10¹⁴ write endurance and 10-year data retention specification at 105°C. This eliminates battery leakage, aging, and replacement costs inherent in NV-SRAM solutions.
Which package type is used by M3032316035NX0ITBR?
M3032316035NX0ITBR uses the 54-pin TSOP package (10mm × 22mm), as indicated by the "TB" code in its part number ordering system (Page 5, Figure 1) and confirmed in Page 6's Valid Combinations table. This matches the 54-pin TSOP pinout shown on Page 9, supporting densities up to 16Mbit - though M3032316 is the 32Mbit variant using the same mechanical footprint.
Can M3032316035NX0ITBR be used as a drop-in replacement for standard SRAM?
M3032316035NX0ITBR is pin-compatible and timing-compatible with many 32Mbit x16 SRAMs using 54-pin TSOP, but requires attention to power sequencing: E#, G#, and W# must track VCC during power-up/down, unlike volatile SRAM. Also, write operations are inhibited below Vwi (2.1–2.5V), so brownout detection must be implemented if used in unstable power environments.
What is the write endurance rating of M3032316035NX0ITBR?
M3032316035NX0ITBR guarantees ≥10¹⁴ write cycles, as specified in Table 16 (Endurance and Data Retention). This is measured under standard conditions (VCC = 3.0V, TA = 25°C) and reflects the intrinsic reliability of its 40nm pMTJ STT-MRAM cell structure - orders of magnitude higher than NOR Flash or EEPROM, enabling continuous logging without wear leveling.
M3032316035NX0ITBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3032316035NX0ITBR FAQ
1.How can I place an order for M3032316035NX0ITBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316035NX0ITBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316035NX0ITBR reliable?
The price and inventory of M3032316035NX0ITBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316035NX0ITBR is usually 5 days.
3.What payment methods are accepted for M3032316035NX0ITBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316035NX0ITBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3032316035NX0ITBR?
M3032316035NX0ITBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316035NX0ITBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316035NX0ITBR?
For technical support, including M3032316035NX0ITBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316035NX0ITBR requirements.
6.How does Aetrix verify that M3032316035NX0ITBR is sourced from the original manufacturer or authorized distributors?
All M3032316035NX0ITBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316035NX0ITBR meets industry standards.
7.What is the process for return or replacement of M3032316035NX0ITBR?
All M3032316035NX0ITBR units undergo pre-shipment inspection (PSI). If there is an issue with M3032316035NX0ITBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316035NX0ITBR part is unused and in its original packaging.
Return procedure for M3032316035NX0ITBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316035NX0ITBR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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