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Renesas M3032316035NX0ITBY
- Part No.:
- M3032316035NX0ITBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3032316035NX0ITBY.pdf
- Description:
- IC RAM 32MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,361
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Product details
Overview
M3032316035NX0ITBY from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 interface, 35ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (–40°C to +85°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3032316035NX0ITBY datasheet, M3032316035NX0ITBY pinout, M3032316035NX0ITBY application, or M3032316035NX0ITBY equivalent, this page provides verified technical context, package mapping, timing behavior, endurance specs, and validated alternative options for industrial embedded memory selection.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without wear-out mechanisms. Its parallel asynchronous interface supports byte- and word-level operations via UB#/LB# controls and operates with E#, G#, and W# control signals in standard SRAM timing protocols.
The device implements a full MRAM array architecture with row/column decoders, sense amplifiers, and address/data I/O control logic. It requires strict power sequencing-E#, W#, and G# must track VCC during power-up/down-and guarantees 10¹⁴ write cycles and 10-year data retention at 105°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 32Mbit (2,097,152 × 16 organization), enabling large buffer storage without refresh or backup power. |
| Access Time | 35ns read/write cycle time-matches SRAM latency while retaining data after power loss. |
| Supply Voltage | 2.7V–3.6V operation-compatible with standard 3.3V industrial logic rails and tolerant of brownout conditions down to 2.1V (Vwi). |
| Endurance | 10¹⁴ write cycles-effectively unlimited for lifetime industrial logging applications. |
| Data Retention | 10 years at 105°C-ensures long-term reliability in high-temperature environments like motor drives and power converters. |
| Operating Temp | –40°C to +85°C (industrial grade)-validated across full range for use in uncontrolled ambient deployments. |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB#, ADDR[20:0], DQ[15:0]-drop-in replacement for legacy SRAM/PSRAM in existing bus designs. |
Pinout & Package
Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS-compliant, suitable for high-density PCB layouts and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; device enters standby (ISB ≤ 5.0mA) when high, enabling low-power idle states. |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; used with W# = high for read operations. |
| W# | Write Enable | Active-low control for write operations; latches DQ data on falling edge when E# is low. |
| UB# / LB# | Byte Enables | Independent upper/lower byte gating-enables 8-bit partial writes without disturbing adjacent bytes. |
| ADDR[20:0] | Address Inputs | 21-bit address bus supporting full 32Mbit addressing (A0–A20); A18–A20 used only for 32Mb density. |
| DQ[15:0] | Bidirectional Data | x16 data bus with Hi-Z control; supports simultaneous 16-bit transfers and byte-selectable access. |
| VCC / VSS | Power / Ground | Single 3.3V supply domain for core and I/O; no separate VDDQ required-simplifies power delivery design. |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists indefinitely without power or capacitors-eliminates battery/SPI FRAM backup circuitry. |
| pMTJ STT-MRAM Technology | 40nm node enables high density and low switching energy-reduces write current (IWRITE ≤ 30mA) vs. older toggle MRAM. |
| SRAM-compatible Timing | 35ns tAVAV with no command overhead-integrates into legacy microcontroller or FPGA memory controllers without firmware changes. |
| Industrial Temperature Range | –40°C to +85°C operation-qualified per JEDEC standards for deployment in PLCs, HMIs, and motor control units. |
| Magnetic Immunity | Withstands 24,000 A/m fields during read/write-immune to typical industrial EMI sources including solenoids and transformers. |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
|
Use Scenario: Real-time motion control log buffering in servo drive firmware, capturing encoder position and fault events during power interruption. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing last-known state and error codes with zero-latency write capability. Use Value: Eliminates supercapacitor-based backup systems and ensures deterministic recovery within 100µs of power restoration. |
Use Scenario: Storing calibration coefficients and patient session history in portable ultrasound devices with frequent on/off cycling. IC Role / Device Role / Timing Role: Persistent configuration store accessed at boot and updated during field service-no EEPROM wear-out concerns. Use Value: Supports >100,000 field updates over product lifetime without degradation, meeting IEC 62304 software safety requirements. |
| Smart Metering | Industrial Networking |
|
Use Scenario: Tamper-proof energy consumption logging in ANSI C12.22-compliant meters operating in outdoor enclosures. IC Role / Device Role / Timing Role: Secure, high-endurance memory for time-stamped kWh records with cryptographic signature storage. Use Value: Guarantees 10-year data integrity at 85°C ambient-exceeds ANSI C12.22 retention mandates without thermal derating. |
Use Scenario: Packet buffer and configuration storage in DIN-rail Ethernet switches deployed in manufacturing cells. IC Role / Device Role / Timing Role: High-speed packet staging memory interfaced directly to MAC controller, supporting line-rate forwarding. Use Value: Enables 35ns burst writes to capture microsecond-scale network anomalies-critical for IEEE 1588 timestamping accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XIT | 8Mbit density, 45ns access, SOIC-44 package, 3.3V-only supply (3.135–3.465V) | Limited to lower-density buffering; narrower voltage margin reduces compatibility with noisy 3.3V rails. | Select when board space permits SOIC and system requires only 8Mbit with relaxed timing. |
| Infineon Q803216035NXT | 32Mbit, 35ns, 48-ball FBGA, but rated only to –40°C to +105°C (industrial plus) and requires 2.5V–3.6V supply | Better high-temp support but lacks guaranteed 85°C industrial qualification; tighter VCC min may limit brownout resilience. | Prefer for extended-temperature deployments where VCC stability exceeds 2.7V minimum under all conditions. |
Compared with CY14B108L-BA45XIT and Q803216035NXT, M3032316035NX0ITBY uniquely combines 32Mbit density, 35ns timing, industrial-grade (–40°C to +85°C) qualification, and 2.7V–3.6V voltage tolerance-making it optimal for cost-sensitive, high-reliability industrial controllers requiring drop-in SRAM replacement.
Availability
M3032316035NX0ITBY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and smart metering applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for M3032316035NX0ITBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3032316035NX0ITBY belongs to the M3xxx316 parallel MRAM family, designed specifically to replace battery-backed SRAM and legacy PSRAM in mission-critical industrial systems demanding infinite endurance and instant non-volatility.
FAQ
What is the maximum operating temperature for M3032316035NX0ITBY?
M3032316035NX0ITBY is rated for industrial temperature range: –40°C to +85°C. This specification is fully qualified and tested per JEDEC standards. The device maintains full 35ns timing and 10¹⁴ endurance across this range. Operation beyond +85°C is not guaranteed and may violate absolute maximum ratings for junction temperature (125°C).
Does M3032316035NX0ITBY require external backup power or capacitors?
No, M3032316035NX0ITBY does not require external backup power, batteries, or hold-up capacitors. As a true non-volatile MRAM, it retains data indefinitely without power. Its 10-year data retention at 105°C and infinite write endurance eliminate the need for auxiliary power schemes common with battery-SRAM or FRAM solutions.
Is M3032316035NX0ITBY pin-compatible with standard SRAMs?
M3032316035NX0ITBY uses a 48-ball FBGA package with signal assignments matching industry-standard x16 parallel SRAM footprints (e.g., AS6C1616, IS61LV25616). While pin functions align (E#, G#, W#, UB#, LB#, ADDR, DQ), layout review is required due to differences in NC/DNU placement and thermal pad requirements. No PCB redesign is needed if using compatible FBGA land pattern.
What is the write endurance rating of M3032316035NX0ITBY?
M3032316035NX0ITBY is specified for ≥10¹⁴ write cycles-effectively unlimited for any industrial application. This endurance is achieved via pMTJ STT-MRAM technology and is guaranteed across the full operating temperature range (–40°C to +85°C). Unlike Flash or EEPROM, there is no wear leveling or block management required.
Can M3032316035NX0ITBY be used in place of a 32Mbit PSRAM?
Yes, M3032316035NX0ITBY can replace 32Mbit PSRAM in most cases. It matches PSRAM's x16 interface and 35ns timing but adds true non-volatility, eliminating the need for refresh cycles and external power backup. Key differences include absence of internal refresh logic and stricter VCC ramp requirements-designers must ensure proper power sequencing per datasheet Section 15.
M3032316035NX0ITBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3032316035NX0ITBY FAQ
1.How can I place an order for M3032316035NX0ITBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316035NX0ITBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316035NX0ITBY reliable?
The price and inventory of M3032316035NX0ITBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316035NX0ITBY is usually 5 days.
3.What payment methods are accepted for M3032316035NX0ITBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316035NX0ITBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3032316035NX0ITBY?
M3032316035NX0ITBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316035NX0ITBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316035NX0ITBY?
For technical support, including M3032316035NX0ITBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316035NX0ITBY requirements.
6.How does Aetrix verify that M3032316035NX0ITBY is sourced from the original manufacturer or authorized distributors?
All M3032316035NX0ITBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316035NX0ITBY meets industry standards.
7.What is the process for return or replacement of M3032316035NX0ITBY?
All M3032316035NX0ITBY units undergo pre-shipment inspection (PSI). If there is an issue with M3032316035NX0ITBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316035NX0ITBY part is unused and in its original packaging.
Return procedure for M3032316035NX0ITBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316035NX0ITBY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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