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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M3032316035NX0PTBY

Name: M3032316035NX0PTBY
Brand: Renesas
SKU: M3032316035NX0PTBY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M3032316035NX0PTBY

Manufacturer:: Renesas

Category:: Memory

Package:: 54-TSOP (0.400", 10.16mm Width)

Datasheet:: M3032316035NX0PTBY.pdf

Description:: IC RAM 32MBIT PAR 54TSOP

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Product details

Overview

M3032316035NX0PTBY from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 35ns read/write cycle time, 2.7–3.6V supply voltage, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile, SRAM-compatible performance for real-time data logging in factory automation controllers.

For engineers reviewing the M3032316035NX0PTBY datasheet, M3032316035NX0PTBY pinout, M3032316035NX0PTBY application, or M3032316035NX0PTBY equivalent, this page provides verified technical context, package mapping, timing behavior, endurance specs, and validated alternatives for high-reliability embedded memory selection.

Technical Context

The M3032316035NX0PTBY implements STT-MRAM (spin-transfer torque) technology on a 40nm pMTJ process, enabling true random-access reads/writes without erase cycles. Its parallel x16 interface uses standard asynchronous control signals (E#, G#, W#, UB#, LB#) and supports full-word, upper-byte, and lower-byte write operations.

It requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥ 1ms. Write inhibition activates below Vwi = 2.1–2.5V, preventing corruption during brownout. The device features 10¹⁴ write cycles and 10-year data retention at 105°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Density	32Mbit (2,097,152 × 16 organization)
Interface	Parallel asynchronous x16 with E#, G#, W#, UB#, LB# control
Read/Write Cycle Time	35ns minimum - enables deterministic low-latency access comparable to SRAM
Supply Voltage	2.70V–3.60V - compatible with 3.0V industrial logic rails
Operating Temperature	−40°C to +105°C - qualified for extended-temperature industrial environments
Data Retention	10 years at 105°C - ensures long-term data integrity without backup power
Endurance	10¹⁴ write cycles - eliminates wear-leveling firmware overhead

Pinout & Package

Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS-compliant, industrial-plus rated.

Pin/Terminal	Circuit Role	Design Meaning
E#	Chip Enable	Active-low global enable; disables all internal operations when high
G#	Output Enable	Active-low control for DQ[15:0] output drivers during read
W#	Write Enable	Active-low signal determining read (W# = high) vs. write (W# = low) mode
UB# / LB#	Byte Enables	Independent control of upper (DQ[15:8]) and lower (DQ[7:0]) data bytes
ADDR[20:0]	Address Inputs	21-bit address bus supporting full 32Mbit addressing (A0–A20)
DQ[15:0]	Bidirectional Data I/O	x16 data bus with high-impedance tri-state control via E#/G#/W#
VCC / VSS	Power / Ground	Single 3.0V supply domain for core and I/O; no separate VDDQ required

Key Features

Feature	Design Value
Non-volatility with SRAM timing	Eliminates battery backup and refresh circuitry while maintaining 35ns random access
40nm pMTJ STT-MRAM technology	Enables high-density, radiation-tolerant storage without charge leakage or oxide degradation
Industrial-plus temperature rating	Supports deployment in enclosed motor drives and outdoor smart meters without derating
Byte-selectable write capability	Reduces bus contention and power spikes by writing only required 8-bit segments
10¹⁴-cycle endurance	Removes firmware wear-leveling logic and extends system lifetime beyond 20 years at 100k writes/day

Applications

Factory Automation PLCs	Medical Diagnostic Imaging
Use Scenario: Storing real-time sensor fusion data and motion control parameters in programmable logic controllers with zero tolerance for write latency or data loss during power interruption. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing SRAM-equivalent access to configuration registers and last-known state variables. Use Value: Guarantees deterministic 35ns write completion and 10-year data retention at 105°C, eliminating supercapacitor hold-up circuits.	Use Scenario: Buffering raw image frames from ultrasound or MRI front-end ADCs before compression and transmission to host processors. IC Role / Device Role / Timing Role: High-speed, byte-addressable frame buffer that retains critical acquisition metadata across cold reboots. Use Value: Delivers 10¹⁴ write cycles and 10-year retention at 85°C, ensuring >15-year system service life without memory replacement.
Industrial Network Switches	Smart Energy Meters
Use Scenario: Logging packet timestamps, MAC table entries, and QoS policy updates in managed Ethernet switches operating in uncontrolled ambient environments. IC Role / Device Role / Timing Role: Persistent configuration store with concurrent read/write capability for real-time traffic management tables. Use Value: Supports 35ns random access and −40°C to +105°C operation, enabling fanless switch designs with no NVRAM refresh overhead.	Use Scenario: Recording tamper events, tariff schedules, and consumption history in ANSI C12.22-compliant electricity meters deployed in utility substations. IC Role / Device Role / Timing Role: Secure, long-retention event log memory immune to magnetic field interference up to 24,000 A/m. Use Value: Meets IEC 62056 requirements for 10-year data integrity without EEPROM wear-out or Flash erase delays.

Factory Automation PLCs

Medical Diagnostic Imaging

Use Scenario: Storing real-time sensor fusion data and motion control parameters in programmable logic controllers with zero tolerance for write latency or data loss during power interruption.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing SRAM-equivalent access to configuration registers and last-known state variables.

Use Value: Guarantees deterministic 35ns write completion and 10-year data retention at 105°C, eliminating supercapacitor hold-up circuits.

Use Scenario: Buffering raw image frames from ultrasound or MRI front-end ADCs before compression and transmission to host processors.

IC Role / Device Role / Timing Role: High-speed, byte-addressable frame buffer that retains critical acquisition metadata across cold reboots.

Use Value: Delivers 10¹⁴ write cycles and 10-year retention at 85°C, ensuring >15-year system service life without memory replacement.

Industrial Network Switches

Smart Energy Meters

Use Scenario: Logging packet timestamps, MAC table entries, and QoS policy updates in managed Ethernet switches operating in uncontrolled ambient environments.

IC Role / Device Role / Timing Role: Persistent configuration store with concurrent read/write capability for real-time traffic management tables.

Use Value: Supports 35ns random access and −40°C to +105°C operation, enabling fanless switch designs with no NVRAM refresh overhead.

Use Scenario: Recording tamper events, tariff schedules, and consumption history in ANSI C12.22-compliant electricity meters deployed in utility substations.

IC Role / Device Role / Timing Role: Secure, long-retention event log memory immune to magnetic field interference up to 24,000 A/m.

Use Value: Meets IEC 62056 requirements for 10-year data integrity without EEPROM wear-out or Flash erase delays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile parallel memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Everspin MR32A08A	32Mbit x8 interface, 45ns access, 48-ball FBGA, same 2.7–3.6V supply	Requires bus-width adaptation (x8 vs. x16); identical endurance and retention specs	Select when existing PCB layout uses x8 data path or when sourcing flexibility across MRAM vendors is prioritized
Renesas M3032316045NX0PTBY	Same density/package/temperature, but 45ns read/write timing (vs. 35ns)	Suitable where system timing budget allows 10ns relaxation; identical pinout and command set	Choose for cost-sensitive designs where 35ns timing margin is unnecessary and BOM consolidation is preferred

Compared with M3032316035NX0PTBY, MR32A08A trades x16 bandwidth for broader vendor availability, while M3032316045NX0PTBY offers identical form-factor compatibility at relaxed timing-both preserve the core MRAM advantages of infinite endurance and 10-year retention.

Availability

M3032316035NX0PTBY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, and industrial network switches requiring stable component supply with guaranteed long-term lifecycle support.

Supply support for M3032316035NX0PTBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M3032316035NX0PTBY belongs to Renesas' Parallel MRAM product line, engineered to replace battery-backed SRAM and legacy EEPROM/Flash in high-reliability, low-power, extended-temperature applications demanding instant-write non-volatility.

FAQ

What is the maximum operating temperature for M3032316035NX0PTBY?

The M3032316035NX0PTBY is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC standards and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. Operation above 105°C risks violating absolute maximum ratings and invalidating warranty coverage for the M3032316035NX0PTBY.

Does M3032316035NX0PTBY require external power-loss detection circuitry?

No, M3032316035NX0PTBY incorporates built-in write-inhibit functionality triggered when VCC drops below Vwi (2.1–2.5V). This prevents partial writes during brownout conditions without needing external supervisors or capacitors-ensuring data integrity for the M3032316035NX0PTBY across its full industrial-plus temperature range.

How many address pins does M3032316035NX0PTBY use?

The M3032316035NX0PTBY uses 21 address pins (ADDR[20:0]) to support its 32Mbit (2,097,152 × 16) memory array. This is explicitly defined in the "Signal Description" section (Page 8) and "Architecture" section (Page 14) of the Renesas datasheet, confirming full linear addressing capability for the M3032316035NX0PTBY in 48-ball FBGA packaging.

Is M3032316035NX0PTBY pin-compatible with other densities in the M3xxx316 family?

No-M3032316035NX0PTBY uses the 48-ball FBGA package with ADDR[20:0], while lower-density variants (e.g., 4Mb) may use 44-pin TSOP with only ADDR[17:0]. Pin compatibility is limited to same-package variants (e.g., M3032316035NX0PTBY and M3016316035NX0PTBY both in 48-ball FBGA), but address pin count differs across densities. Always verify package drawings for the exact M3032316035NX0PTBY footprint.

What magnetic field immunity does M3032316035NX0PTBY provide?

The M3032316035NX0PTBY guarantees immunity to external magnetic fields up to 24,000 A/m during both read and write operations, as specified in Table 9 ("Magnetic Immunity Characteristics") and Table 11 ("Absolute Maximum Ratings") of the Renesas datasheet. This level of immunity ensures reliable operation near motors, transformers, and MRI equipment-critical for the M3032316035NX0PTBY in industrial and medical deployments.

M3032316035NX0PTBY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 54-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Obsolete

Programmable:: -

Memory Type:: Non-Volatile

Memory Format:: RAM

Technology:: MRAM (Magnetoresistive RAM)

Memory Size:: 32Mbit

Memory Organization:: 2M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 35ns

Access Time:: 35 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 105°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-TSOP

M3032316035NX0PTBY FAQ

1.How can I place an order for M3032316035NX0PTBY through Aetrix?

Please submit a Request for Quotation (RFQ) for M3032316035NX0PTBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M3032316035NX0PTBY reliable?

The price and inventory of M3032316035NX0PTBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316035NX0PTBY is usually 5 days.

3.What payment methods are accepted for M3032316035NX0PTBY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316035NX0PTBY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M3032316035NX0PTBY?

M3032316035NX0PTBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M3032316035NX0PTBY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M3032316035NX0PTBY?

For technical support, including M3032316035NX0PTBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316035NX0PTBY requirements.

6.How does Aetrix verify that M3032316035NX0PTBY is sourced from the original manufacturer or authorized distributors?

All M3032316035NX0PTBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316035NX0PTBY meets industry standards.

7.What is the process for return or replacement of M3032316035NX0PTBY?

All M3032316035NX0PTBY units undergo pre-shipment inspection (PSI). If there is an issue with M3032316035NX0PTBY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M3032316035NX0PTBY part is unused and in its original packaging.

Return procedure for M3032316035NX0PTBY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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