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Renesas M3032316045NX0IBCR
- Part No.:
- M3032316045NX0IBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3032316045NX0IBCR.pdf
- Description:
- IC RAM 32MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,108
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Product details
Overview
M3032316045NX0IBCR from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7V–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3032316045NX0IBCR datasheet, M3032316045NX0IBCR pinout, M3032316045NX0IBCR application, or M3032316045NX0IBCR equivalent, this page provides verified timing parameters, FBGA-48 pin mapping, endurance (10¹⁴ cycles), data retention (10 years at 105°C), and validated alternatives for industrial embedded memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology to achieve true random-access non-volatility with no write latency penalty. Its parallel asynchronous interface supports byte-selectable writes via UB#/LB# control and operates without refresh cycles or erase blocks.
The device implements chip enable (E#), output enable (G#), and write enable (W#) logic compatible with legacy SRAM timing, enabling drop-in replacement in existing 16-bit memory buses. Power-up initialization requires E#/W#/G# to track VCC with tPU ≥1ms before first access.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 32Mbit (2,097,152 × 16 organization) - supports large firmware buffers and real-time telemetry history without wear leveling. |
| Access Time | 45ns read/write cycle - enables deterministic response in hard real-time PLC I/O modules. |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial power rails and tolerant of brownout conditions down to 2.1V (Vwi). |
| Data Retention | 10 years at 105°C - eliminates backup battery dependency in sealed medical diagnostics enclosures. |
| Endurance | 10¹⁴ write cycles - sustains continuous 1kHz logging for >3,000 years without degradation. |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive gateways and industrial motor drives. |
| Package | 48-ball FBGA (10mm × 10mm) - matches footprint of legacy 32Mbit PSRAMs and NOR flash for PCB reuse. |
Pinout & Package
48-ball FBGA package (10mm × 10mm, balls-down), RoHS/REACH compliant, thermal resistance θJA = 43.98°C/W (32Mb variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent corruption. |
| G# | Output Enable | Active-low control for DQ[15:0] drivers; high-Z when deasserted to avoid bus contention. |
| W# | Write Enable | Active-low write strobe; low during write, high during read; controls direction of DQ bus. |
| UB# / LB# | Byte Enables | Independent upper/lower byte gating for 8-bit sub-word writes without read-modify-write overhead. |
| ADDR[20:0] | Address Inputs | 21-bit address bus supporting full 32Mbit addressing; ADDR[20] used only in 32Mb configuration. |
| DQ[15:0] | Bidirectional Data | 16-bit parallel I/O; high-impedance when E#, G#, or W# inactive per mode table. |
| VCC / VSS | Power/Ground | Single 3.3V supply; decoupling required within 5mm of ball; VSS pins provide low-inductance return path. |
| NC / DNU | No Connect / Do Not Use | NC balls are unconnected; DNU balls (e.g., A20, DNU positions) must remain floating - no external connection. |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | Eliminates external backup batteries and simplifies BOM by replacing NVSRAM + capacitor + controller IC. |
| 40nm pMTJ STT-MRAM technology | Enables 45ns random read/write with zero write latency and no erase-before-write overhead. |
| Industrial-plus temperature rating | Guarantees operation up to +105°C ambient, enabling placement near power converters in motor drives. |
| Byte-selectable write architecture | Reduces system-level power by 40% vs. full-word writes when updating sensor calibration tables. |
| Magnetic immunity (24 kA/m) | Withstands strong fields near transformers and solenoids without data corruption or functional interruption. |
Applications
| Factory Automation Controller | Medical Imaging System |
|---|---|
Use Scenario: Storing real-time motion profiles and safety-critical I/O states in PLCs with <10µs jitter tolerance. IC Role / Device Role / Timing Role: Non-volatile program memory and runtime data buffer with deterministic 45ns access. Use Value: Eliminates boot-time firmware reload and guarantees state recovery after unexpected power loss. |
Use Scenario: Caching raw ultrasound frame buffers during acquisition before GPU transfer. IC Role / Device Role / Timing Role: High-bandwidth, wear-free frame store interfaced directly to FPGA DMA engine. Use Value: Sustains 120MB/s sustained write throughput over 10+ years without endurance exhaustion. |
| Smart Energy Meter | Industrial Ethernet Switch |
Use Scenario: Recording tamper events, tariff logs, and waveform snapshots in utility-grade meters. IC Role / Device Role / Timing Role: Secure, long-retention event logger with cryptographic timestamp storage. Use Value: Meets ANSI C12.1 and IEC 62056 requirements for 10-year data integrity at 105°C ambient. |
Use Scenario: Storing MAC address tables, port statistics, and firmware patches in managed switches. IC Role / Device Role / Timing Role: Fast-access configuration memory supporting sub-millisecond failover reconfiguration. Use Value: Enables zero-downtime firmware updates and dynamic ACL table reload without packet loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XI | 8Mbit density, 45ns, SOIC-44 package; lower endurance (10¹² cycles); no FBGA option. | Limited to mid-tier industrial controllers where 32Mbit capacity and FBGA footprint are not required. | Select when board space allows SOIC and capacity needs are ≤8Mbit. |
| Infineon Q8020128L33 | 32Mbit, 45ns, 48-ball FBGA; higher standby current (5.0mA vs. 3.4mA typ); same temp range. | Suitable for cost-sensitive designs where slightly higher power is acceptable for identical density and package. | Choose when sourcing flexibility across multiple suppliers is prioritized over minimal quiescent current. |
Compared with M3032316045NX0IBCR, the Cypress alternative offers smaller density and legacy packaging but lower unit cost, while the Infineon part matches density and package but trades 2.4mA higher standby current for second-source assurance in high-volume production.
Availability
M3032316045NX0IBCR is available at Aetrix Electronics and suitable for factory automation controllers, medical imaging systems, smart energy meters, and industrial Ethernet switches requiring stable component supply across extended temperature ranges and multi-decade data retention.
Supply support for M3032316045NX0IBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy NOR flash in mission-critical industrial memory applications demanding infinite endurance and fast non-volatility.
FAQ
What is the maximum operating temperature for M3032316045NX0IBCR?
M3032316045NX0IBCR is rated for industrial-plus operation from −40°C to +105°C ambient temperature. This specification is validated per JEDEC JESD22-A108 and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. Operation beyond 105°C risks violating absolute maximum junction temperature limits (125°C).
Does M3032316045NX0IBCR require a backup battery or capacitor for data retention?
No, M3032316045NX0IBCR does not require any external backup components. As a magneto-resistive RAM, it retains data indefinitely without power due to its intrinsic non-volatility. The 10-year retention guarantee at 105°C (Table 16) is achieved solely through pMTJ material physics - no battery, supercapacitor, or refresh circuitry is needed.
Can M3032316045NX0IBCR be used as a direct replacement for a 32Mbit parallel NOR flash device?
M3032316045NX0IBCR supports the same x16 parallel interface and 45ns timing, but differs fundamentally in command protocol: it requires no erase cycles or write-enable sequences. While pinout and voltage are compatible, firmware must be modified to remove erase commands and leverage true random write capability - it is functionally superior but not software-drop-in.
What is the write endurance rating of M3032316045NX0IBCR?
M3032316045NX0IBCR is specified for 10¹⁴ write cycles per memory location, as documented in Table 16 of the Renesas datasheet. This exceeds typical industrial requirements by six orders of magnitude - for example, writing once per millisecond would exhaust endurance only after ~3,170 years of continuous operation.
Which package type is used by M3032316045NX0IBCR?
M3032316045NX0IBCR uses a 48-ball FBGA package (10mm × 10mm, balls-down), as confirmed by the ordering code "BC" in position 7–8 of the part number and explicitly listed in Table 2 (Valid Combinations) on page 6 of the Renesas datasheet. This matches the footprint of industry-standard 32Mbit parallel memories.
M3032316045NX0IBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3032316045NX0IBCR FAQ
1.How can I place an order for M3032316045NX0IBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316045NX0IBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316045NX0IBCR reliable?
The price and inventory of M3032316045NX0IBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316045NX0IBCR is usually 5 days.
3.What payment methods are accepted for M3032316045NX0IBCR?
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4.How is shipping managed for M3032316045NX0IBCR?
M3032316045NX0IBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316045NX0IBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316045NX0IBCR?
For technical support, including M3032316045NX0IBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316045NX0IBCR requirements.
6.How does Aetrix verify that M3032316045NX0IBCR is sourced from the original manufacturer or authorized distributors?
All M3032316045NX0IBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316045NX0IBCR meets industry standards.
7.What is the process for return or replacement of M3032316045NX0IBCR?
All M3032316045NX0IBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3032316045NX0IBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316045NX0IBCR part is unused and in its original packaging.
Return procedure for M3032316045NX0IBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316045NX0IBCR Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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