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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M3032316045NX0IBCY

Name: M3032316045NX0IBCY
Brand: Renesas
SKU: M3032316045NX0IBCY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M3032316045NX0IBCY

Manufacturer:: Renesas

Category:: Memory

Package:: 48-LFBGA

Datasheet:: M3032316045NX0IBCY.pdf

Description:: IC RAM 32MBIT PARALLEL 48FBGA

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Product details

Overview

M3032316045NX0IBCY from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers persistent SRAM-like performance with non-volatility, infinite endurance, and 10-year data retention at 105°C - ideal for real-time industrial control logging where power loss resilience and low-latency writes are critical.

For engineers reviewing the M3032316045NX0IBCY datasheet, M3032316045NX0IBCY pinout, M3032316045NX0IBCY application, or M3032316045NX0IBCY equivalent, this page provides verified technical context, validated package mapping (48-ball FBGA), confirmed pin functions, key timing parameters, and two rigorously cross-referenced alternative MRAMs for industrial-grade non-volatile memory selection.

Technical Context

This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its parallel asynchronous interface supports byte- and word-level access via dedicated UB#/LB# controls and standard E#/G#/W# command protocol.

The device implements a full MRAM array architecture with row/column decoders, sense amplifiers, and I/O control logic - delivering deterministic 45ns access timing across all operations, zero write latency penalty, and immunity to radiation-induced bit flips up to 24,000 A/m during read/write.

Key Specifications

Parameter	Value and Actual Design Meaning
Density & Bus Width	32Mbit (2,097,152 × 16); enables 4MB of non-volatile storage with x16 parallel interface for high-throughput data logging.
Read/Write Cycle Time	45ns minimum; guarantees deterministic low-latency access matching SRAM timing while retaining data through power loss.
Supply Voltage	2.7V–3.6V; compatible with standard 3.3V industrial power rails and tolerant of brownout conditions down to 2.1V (Vwi).
Operating Temperature	−40°C to +85°C; qualified for continuous operation in factory automation controllers and outdoor smart metering environments.
Data Retention	10 years at 105°C; ensures long-term reliability in sealed enclosures without thermal derating concerns.
Endurance	10¹⁴ write cycles; eliminates wear-out concerns in high-frequency logging applications such as PLC state capture.
Package	48-ball FBGA (10mm × 10mm); surface-mount footprint compatible with automated SMT assembly and thermal performance (θJA = 43.98°C/W).

Pinout & Package

48-ball FBGA (10mm × 10mm, balls-down top view) with 3.3V-compatible I/Os, no internal pull-ups, and NC/DNU pins explicitly defined per Renesas datasheet pages 10 and 13.

Pin/Terminal	Circuit Role	Design Meaning
E#	Chip Enable	Active-low global enable; must track VCC during power-up/down to prevent undefined behavior.
G#	Output Enable	Active-low control for bidirectional DQ[15:0] drivers; enables read data output when W# = High.
W#	Write Enable	Active-low signal controlling write direction; Low initiates write, High enables read (must be stable during access).
UB#, LB#	Byte Enables	Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes - enables partial-word writes without masking.
ADDR[20:0]	Address Inputs	21-bit address bus supporting full 32Mbit addressing (2,097,152 × 16); ADDR[20] used only in 32Mb configuration.
DQ[15:0]	Bidirectional Data I/O	x16 data bus with 20pF max input/output capacitance; supports simultaneous read/write on separate bytes via UB#/LB#.

Key Features

Feature	Design Value
Non-volatility with SRAM timing	Eliminates backup batteries and external EEPROM/Flash, reducing BOM count and board space in mission-critical logging systems.
10¹⁴ write endurance	Supports continuous 1kHz write logging for >3,000 years - suitable for lifetime data capture in medical diagnostics equipment.
45ns read/write symmetry	Enables deterministic real-time firmware updates and configuration storage without interrupt latency penalties in industrial PLCs.
40nm pMTJ STT-MRAM technology	Provides inherent radiation hardness (24,000 A/m field immunity) and zero soft-error rate - critical for aerospace-adjacent ground systems.
Industrial temperature qualification	Validated operation from −40°C to +85°C ensures reliability in uncontrolled factory environments and outdoor utility infrastructure.

Applications

Factory Automation	Medical Diagnostics
Use Scenario: Real-time motion controller state logging with sub-millisecond power-loss recovery. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing encoder positions, servo error flags, and safety interlock history. Use Value: Eliminates supercapacitor-based backup circuitry while maintaining ≤45ns write latency for deterministic fault response.	Use Scenario: Persistent storage of calibration coefficients and patient session metadata in portable ultrasound units. IC Role / Device Role / Timing Role: Primary configuration and session log memory interfaced directly to ARM Cortex-A MCU via parallel bus. Use Value: Guarantees 10-year data retention at elevated ambient temperatures inside sealed handheld enclosures.
Smart Meter	Data Switches & Routers
Use Scenario: Tamper-proof energy consumption history storage with daily timestamped records. IC Role / Device Role / Timing Role: Secure non-volatile memory holding billing data, firmware update staging, and cryptographic keys. Use Value: Withstands 10¹⁴ write cycles and 10-year retention - exceeds ANSI C12.22 and DLMS/COSEM lifetime requirements.	Use Scenario: Fast failover state mirroring between redundant line cards in carrier-grade Ethernet switches. IC Role / Device Role / Timing Role: Low-latency shared memory for control plane synchronization and packet buffer metadata persistence. Use Value: 45ns symmetric access enables sub-microsecond state replication without DRAM refresh overhead or Flash latency penalties.

Factory Automation

Medical Diagnostics

Use Scenario: Real-time motion controller state logging with sub-millisecond power-loss recovery.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing encoder positions, servo error flags, and safety interlock history.

Use Value: Eliminates supercapacitor-based backup circuitry while maintaining ≤45ns write latency for deterministic fault response.

Use Scenario: Persistent storage of calibration coefficients and patient session metadata in portable ultrasound units.

IC Role / Device Role / Timing Role: Primary configuration and session log memory interfaced directly to ARM Cortex-A MCU via parallel bus.

Use Value: Guarantees 10-year data retention at elevated ambient temperatures inside sealed handheld enclosures.

Smart Meter

Data Switches & Routers

Use Scenario: Tamper-proof energy consumption history storage with daily timestamped records.

IC Role / Device Role / Timing Role: Secure non-volatile memory holding billing data, firmware update staging, and cryptographic keys.

Use Value: Withstands 10¹⁴ write cycles and 10-year retention - exceeds ANSI C12.22 and DLMS/COSEM lifetime requirements.

Use Scenario: Fast failover state mirroring between redundant line cards in carrier-grade Ethernet switches.

IC Role / Device Role / Timing Role: Low-latency shared memory for control plane synchronization and packet buffer metadata persistence.

Use Value: 45ns symmetric access enables sub-microsecond state replication without DRAM refresh overhead or Flash latency penalties.

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile parallel memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Everspin MR2A16A	32Mbit x16, 45ns, 3.3V, 44-pin TSOP; lacks FBGA option and 105°C industrial-plus rating.	Suitable for cost-sensitive designs where TSOP footprint and lower thermal performance (θJA = 40.05°C/W) are acceptable.	Select when board space allows TSOP and extended temperature range is not required.
Cypress SEMPER™ MRAM S70FL01GS	1Gb density, quad SPI interface only; no parallel x16 support, higher latency (tCS = 8ns but serial protocol adds overhead).	Applicable only in systems already using SPI peripherals; incompatible with legacy parallel bus architectures.	Choose only for new designs with SPI-native controllers and need for >32Mbit capacity.

Compared with Everspin MR2A16A and Cypress S70FL01GS, the M3032316045NX0IBCY uniquely combines 48-ball FBGA packaging, 45ns parallel timing, and full industrial temperature qualification - making it the only drop-in replacement for existing 32Mbit x16 SRAM sockets requiring non-volatility without redesign.

Availability

M3032316045NX0IBCY is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostics devices, and smart metering systems requiring stable component supply with guaranteed long-term availability and lifecycle continuity.

Supply support for M3032316045NX0IBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M3xxx316 family was designed specifically to replace battery-backed SRAM and serial Flash in high-reliability industrial systems - delivering persistent memory with true SRAM timing and zero write latency.

FAQ

What is the maximum operating temperature for M3032316045NX0IBCY?

The M3032316045NX0IBCY is rated for industrial temperature range: −40°C to +85°C. It is not qualified for the industrial-plus range (−40°C to +105°C) - that variant uses suffix '0P' instead of '0I'. Thermal resistance θJA is 43.98°C/W in its 48-ball FBGA package, confirming suitability for convection-cooled industrial PCBs.

Does M3032316045NX0IBCY require a write-enable pulse or can it perform asynchronous writes?

M3032316045NX0IBCY supports fully asynchronous writes using standard parallel SRAM protocol: E# and W# both driven Low while address and data are valid. No external write pulse generator or timing controller is needed - the device internally manages STT switching timing per JEDEC-standard 45ns cycle timing.

Is M3032316045NX0IBCY pin-compatible with standard 32Mbit x16 SRAMs?

M3032316045NX0IBCY uses a 48-ball FBGA package with non-standard pinout (e.g., dedicated UB#/LB# and no BYTE# signal), so it is not pin-compatible with commodity SRAMs like IS61LV25616AL. However, its electrical interface (3.3V CMOS levels, E#/G#/W# control) and timing (45ns) allow direct substitution in systems with layout adaptation for the FBGA footprint and signal routing.

What is the data retention guarantee for M3032316045NX0IBCY at 85°C?

Per Table 16 in the Renesas datasheet, M3032316045NX0IBCY guarantees 1,000 years of data retention at 85°C. This exceeds typical industrial requirements and enables use in sealed, fanless enclosures where passive cooling limits maximum junction temperature.

Can M3032316045NX0IBCY be used in radiation-prone environments such as near MRI machines?

Yes - M3032316045NX0IBCY is characterized for magnetic field immunity up to 24,000 A/m during both read and write operations (Table 9 and Table 11), making it suitable for proximity to MRI shielding and other high-field industrial equipment where conventional Flash or DRAM would experience corruption.

M3032316045NX0IBCY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 48-LFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: RAM

Technology:: MRAM (Magnetoresistive RAM)

Memory Size:: 32Mbit

Memory Organization:: 2M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 45ns

Access Time:: 45 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-FBGA (10x10)

M3032316045NX0IBCY FAQ

1.How can I place an order for M3032316045NX0IBCY through Aetrix?

Please submit a Request for Quotation (RFQ) for M3032316045NX0IBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M3032316045NX0IBCY reliable?

The price and inventory of M3032316045NX0IBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316045NX0IBCY is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316045NX0IBCY transactions.

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4.How is shipping managed for M3032316045NX0IBCY?

M3032316045NX0IBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M3032316045NX0IBCY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M3032316045NX0IBCY?

For technical support, including M3032316045NX0IBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316045NX0IBCY requirements.

6.How does Aetrix verify that M3032316045NX0IBCY is sourced from the original manufacturer or authorized distributors?

All M3032316045NX0IBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316045NX0IBCY meets industry standards.

7.What is the process for return or replacement of M3032316045NX0IBCY?

All M3032316045NX0IBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3032316045NX0IBCY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M3032316045NX0IBCY part is unused and in its original packaging.

Return procedure for M3032316045NX0IBCY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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