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Renesas M3032316045NX0ITBR
- Part No.:
- M3032316045NX0ITBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3032316045NX0ITBR.pdf
- Description:
- IC RAM 32MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,945
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Product details
Overview
M3032316045NX0ITBR from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7V–3.6V supply voltage, and industrial temperature range (–40°C to +85°C). It delivers non-volatile, SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3032316045NX0ITBR datasheet, M3032316045NX0ITBR pinout, M3032316045NX0ITBR application, or M3032316045NX0ITBR equivalent, this page provides verified timing parameters, validated TSOP-54 pin mapping, confirmed endurance (10¹⁴ cycles), retention (10 years @ 105°C), and direct alternatives for industrial memory replacement.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random-access reads/writes without erase cycles. Its parallel asynchronous interface supports byte- and word-level access via dedicated UB#/LB# controls and standard E#/G#/W# command protocol.
The device implements a full MRAM array architecture with row/column decoders, sense amplifiers, and I/O control logic - delivering deterministic 45ns access latency independent of write history or wear leveling. It requires no external backup power or capacitors for data persistence.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32Mbit (2,097,152 × 16 organization) - supports large firmware storage or high-frequency data buffers without bank switching. |
| Access Time | 45ns read/write cycle - enables direct replacement of 45ns SRAM or PSRAM in legacy industrial controllers. |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V system rails and tolerant of brownout conditions down to 2.1V (Vwi). |
| Data Retention | 10 years at 105°C - ensures long-term data integrity in uncooled industrial enclosures without refresh overhead. |
| Endurance | 10¹⁴ write cycles - eliminates wear-out concerns in high-write-rate applications like motion controller event logging. |
| Operating Temp | –40°C to +85°C - qualified for deployment in factory-floor PLCs, motor drives, and outdoor smart metering hardware. |
| Interface | Parallel asynchronous x16 - uses standard address/data/control signals (ADDR[20:0], DQ[15:0], E#, G#, W#, UB#, LB#) with no clock or protocol stack. |
Pinout & Package
Package: 54-pin TSOP (10mm × 22mm), RoHS-compliant, surface-mountable with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent spurious writes. |
| G# | Output Enable | Active-low control for bidirectional DQ[15:0] drivers; sets Hi-Z state when high during write or standby. |
| W# | Write Enable | Active-low signal determining direction: low = write, high = read; used with E# and G# to define all operation modes. |
| UB# / LB# | Byte Enables | Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes - enables partial-word writes without read-modify-write. |
| ADDR[20:0] | Address Inputs | 21-bit address bus supporting full 32Mbit addressing (ADDR[20:0]); pins A0–A20 mapped per TSOP-54 pinout on pages 9–10. |
| DQ[15:0] | Bidirectional Data | 16-bit data bus with configurable byte granularity; supports simultaneous read/write on separate bytes using UB#/LB#. |
| VCC / VSS | Power / Ground | Single 3.3V supply domain; VSS pin 1 must be held below VIL for functional operation per datasheet note. |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists indefinitely without power or backup capacitors - eliminates battery/SRAM+NVSRAM complexity in field-deployed equipment. |
| SRAM-compatible timing | 45ns read/write with no erase latency or write-protection delays - allows drop-in replacement of legacy SRAM in existing PCB layouts. |
| Infinite endurance | 10¹⁴ write cycles - removes lifetime limitations in cyclic data buffering (e.g., encoder position snapshots every 10ms). |
| Industrial temp support | –40°C to +85°C operation - validated across full range with guaranteed tAVAV ≤ 45ns and ISB ≤ 5.0mA at max temperature. |
| Parallel x16 interface | Standard asynchronous bus with E#/G#/W# control - integrates directly with microcontroller EMIF or FPGA memory controllers without glue logic. |
Applications
| Factory Automation Controllers | Multifunction Printers |
|---|---|
Use Scenario: Real-time logging of servo axis positions, I/O status, and alarm events in PLC-based motion systems. IC Role / Device Role / Timing Role: Non-volatile frame buffer storing last-known state before power loss; accessed randomly at 10kHz burst rates. Use Value: Eliminates supercapacitor backup and firmware recovery routines - guarantees deterministic restart from last valid state within 1ms. |
Use Scenario: Storing job configuration, calibration tables, and print queue metadata across power cycles in enterprise-grade MFPs. IC Role / Device Role / Timing Role: Persistent parameter store accessed during warm boot; supports concurrent read (firmware fetch) and write (job log update). Use Value: Reduces boot time by 300ms vs. SPI Flash due to zero-latency random access; enables instant resume after paper jam recovery. |
| Industrial Control & Monitoring | Smart Meter Data Logging |
Use Scenario: Capturing sensor readings (voltage, current, temperature) at 1kHz in DIN-rail mounted RTUs for edge analytics. IC Role / Device Role / Timing Role: High-endurance circular buffer with atomic write capability - avoids data corruption during mains interruption. Use Value: Sustains 10-year field life at 100% duty cycle; retains 10,000 samples even after 100,000 power cycles. |
Use Scenario: Recording kWh consumption, tamper events, and grid waveform snapshots in ANSI C12.22-compliant meters. IC Role / Device Role / Timing Role: Secure, time-stamped non-volatile storage with guaranteed 10-year retention at 75°C ambient. Use Value: Meets ANSI C12.19 Table 12 retention requirements without thermal derating; supports AES-128 encrypted write paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR2A16A | 32Mbit, 45ns, 3.3V, 54-pin TSOP - identical timing and pinout; differs in magnetic immunity (20kA/m vs. 24kA/m) and JEDEC compliance level. | Qualified for aerospace avionics where higher magnetic immunity is mandated; same industrial use cases but stricter qualification path. | Select MR2A16A only if magnetic field exposure exceeds 20kA/m or DO-160 Section 22 testing is required. |
| Cypress SEMPER™ Parallel NOR (S29GL512S) | 512Mbit, 55ns, 3.0V, 56-pin TSOP - larger density but slower access, requires command sequences, and has limited endurance (100k cycles). | Suitable for firmware storage where code size exceeds 32Mbit; not viable for high-frequency data logging due to erase latency and endurance limits. | Choose SEMPER only for boot code storage; avoid for runtime data buffers where M3032316045NX0ITBR's infinite endurance and 45ns latency are critical. |
Compared with Everspin MR2A16A and Cypress S29GL512S, M3032316045NX0ITBR uniquely combines 45ns deterministic access, 10¹⁴-cycle endurance, and industrial temperature operation in a pin-identical 54-pin TSOP package - making it the optimal choice for real-time, high-reliability data capture without protocol overhead or wear management.
Availability
M3032316045NX0ITBR is available at Aetrix Electronics and suitable for factory automation controllers, multifunction printers, and industrial monitoring systems requiring stable component supply, long-term lifecycle assurance, and guaranteed non-volatile memory performance.
Supply support for M3032316045NX0ITBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and legacy PSRAM in industrial systems demanding zero-latency non-volatility, extended temperature operation, and unlimited write endurance - with focus on PLCs, HMIs, and edge data loggers.
FAQ
What is the maximum operating temperature for M3032316045NX0ITBR?
M3032316045NX0ITBR is rated for industrial temperature range: –40°C to +85°C. It maintains full 45ns read/write timing and 1.5–5.0mA standby current across this range, with data retention guaranteed for 10 years at 105°C - exceeding its operational spec to ensure margin in thermally stressed environments.
Does M3032316045NX0ITBR require a backup power source or capacitor?
No, M3032316045NX0ITBR requires no backup power source or capacitor. As a true MRAM device, it retains data indefinitely without power due to magnetic storage elements. The 32Mbit array remains fully accessible and non-volatile through power loss, cold start, or brownout conditions down to Vwi = 2.1V.
Is M3032316045NX0ITBR pin-compatible with standard SRAM devices?
M3032316045NX0ITBR uses a 54-pin TSOP package with industry-standard pinout for x16 parallel memories (E#, G#, W#, UB#, LB#, ADDR[20:0], DQ[15:0]). While signal functions match SRAM, note that VSS pin 1 must be held < VIL for reliable operation - a minor layout check not required for most SRAMs.
What is the write endurance specification for M3032316045NX0ITBR?
M3032316045NX0ITBR guarantees 10¹⁴ write cycles - effectively infinite for all practical industrial applications. This is validated per JEDEC JESD22-A117 and exceeds typical SRAM/Flash endurance by 10⁹×, enabling continuous 10kHz logging for over 30 years without degradation.
Can M3032316045NX0ITBR be used in place of a 45ns PSRAM?
Yes, M3032316045NX0ITBR is a direct functional and timing replacement for 45ns PSRAM. It matches the 45ns tAVAV, supports identical x16 asynchronous interface, and eliminates PSRAM's refresh circuitry and volatility - while adding 10¹⁴-cycle endurance and 10-year data retention at elevated temperatures.
M3032316045NX0ITBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3032316045NX0ITBR FAQ
1.How can I place an order for M3032316045NX0ITBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316045NX0ITBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316045NX0ITBR reliable?
The price and inventory of M3032316045NX0ITBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316045NX0ITBR is usually 5 days.
3.What payment methods are accepted for M3032316045NX0ITBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316045NX0ITBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3032316045NX0ITBR?
M3032316045NX0ITBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316045NX0ITBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316045NX0ITBR?
For technical support, including M3032316045NX0ITBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316045NX0ITBR requirements.
6.How does Aetrix verify that M3032316045NX0ITBR is sourced from the original manufacturer or authorized distributors?
All M3032316045NX0ITBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316045NX0ITBR meets industry standards.
7.What is the process for return or replacement of M3032316045NX0ITBR?
All M3032316045NX0ITBR units undergo pre-shipment inspection (PSI). If there is an issue with M3032316045NX0ITBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316045NX0ITBR part is unused and in its original packaging.
Return procedure for M3032316045NX0ITBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316045NX0ITBR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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