Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M3032316045NX0ITBY

Name: M3032316045NX0ITBY
Brand: Renesas
SKU: M3032316045NX0ITBY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: M3032316045NX0ITBY

Manufacturer:: Renesas

Category:: Memory

Package:: 54-TSOP (0.400", 10.16mm Width)

Datasheet:: M3032316045NX0ITBY.pdf

Description:: IC RAM 32MBIT PAR 54TSOP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,306

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

M3032316045NX0ITBY from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial temperature range (−40°C to +85°C). It delivers non-volatile SRAM-compatible performance for real-time data logging in factory automation controllers.

For engineers reviewing the M3032316045NX0ITBY datasheet, M3032316045NX0ITBY pinout, M3032316045NX0ITBY application, or M3032316045NX0ITBY equivalent, this page provides verified timing, endurance, package mapping, byte-enable control behavior, and FBGA pin assignment specific to the 32Mbit/48-ball variant.

Technical Context

This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random access with no write latency penalty or erase cycles. Its asynchronous parallel interface supports independent upper/lower byte enables (UB#/LB#) and operates without clocks or command protocols.

The device implements a full SRAM-like bus protocol: E# enables chip select, G# controls output drivers, and W# determines direction (read when high, write when low). Address decoding covers ADDR[20:0] for 32Mbit density, and all operations are non-volatile with guaranteed 10¹⁴ write cycles and 10-year data retention at 105°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Density	32Mbit (2,097,152 × 16 organization)
Interface	Parallel asynchronous x16 with UB#/LB# byte control
Read/Write Cycle Time	45ns - enables drop-in replacement for legacy 45ns SRAMs without timing redesign
Supply Voltage	2.7V–3.6V - compatible with standard 3.3V industrial power rails
Operating Temperature	−40°C to +85°C - qualified for industrial control cabinet environments
Data Retention	10 years at 105°C - ensures long-term data integrity in unpowered storage
Endurance	10¹⁴ write cycles - eliminates wear-leveling firmware overhead

Pinout & Package

Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS-compliant, industrial-grade thermal resistance (θ_JA = 43.98°C/W).

Pin/Terminal	Circuit Role	Design Meaning
E#	Chip Enable	Active-low global enable; must track VCC during power-up/down to prevent corruption
G#	Output Enable	Active-low control of DQ[15:0] drivers; high-Z when deasserted during writes
W#	Write Enable	Active-low direction control: low = write, high = read; defines bus transaction type
UB# / LB#	Byte Enables	Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes
ADDR[20:0]	Address Inputs	21-bit address bus supporting full 32Mbit addressing; no address multiplexing required
DQ[15:0]	Bidirectional Data I/O	16-bit parallel data path; high-impedance when E#, G#, or W# inactive per mode table
VCC / VSS	Power / Ground	Single 3.3V supply domain; decoupling required within 10mm of FBGA corners

Key Features

Feature	Design Value
Non-volatility with SRAM timing	Eliminates backup batteries and external EEPROM/SPI flash for state retention
Unlimited write endurance	Removes firmware wear-leveling logic and extends system lifetime in cyclic logging applications
Byte-selectable write capability	Enables partial-word updates without read-modify-write sequences, reducing bus traffic
40nm pMTJ STT-MRAM technology	Provides radiation-tolerant operation and immunity to magnetic fields up to 24,000 A/m
Industrial temperature qualification	Validated operation across −40°C to +85°C without derating, suitable for DIN-rail mounted PLCs

Applications

Factory Automation Controllers	Medical Diagnostic Imaging Systems
Use Scenario: Real-time logging of sensor calibration coefficients and motion trajectory data during CNC machine operation. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory interfaced directly to FPGA-based motion controller via parallel bus. Use Value: Guarantees zero-latency writes and 10-year data retention without battery or capacitor backup.	Use Scenario: Storing DICOM header metadata and acquisition parameters between MRI scan sessions. IC Role / Device Role / Timing Role: High-reliability configuration store accessed by ARM Cortex-A9 application processor over static bus. Use Value: Prevents parameter loss during unexpected power interruption, meeting IEC 62304 safety requirements.
Smart Energy Meters	Industrial Network Routers
Use Scenario: Recording tamper events, tariff switching logs, and metering registers with cryptographic timestamping. IC Role / Device Role / Timing Role: Secure non-volatile memory mapped into microcontroller's external memory space for atomic write operations. Use Value: Achieves >10¹⁴ write cycles needed for daily logging over 20+ year field life.	Use Scenario: Caching routing tables and port configuration states in Layer 3 industrial switches. IC Role / Device Role / Timing Role: Fast-access persistent memory co-located with packet processor ASIC for sub-microsecond state recovery. Use Value: Enables <10ms failover after power loss, satisfying IEC 61850 GOOSE timing constraints.

Factory Automation Controllers

Medical Diagnostic Imaging Systems

Use Scenario: Real-time logging of sensor calibration coefficients and motion trajectory data during CNC machine operation.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory interfaced directly to FPGA-based motion controller via parallel bus.

Use Value: Guarantees zero-latency writes and 10-year data retention without battery or capacitor backup.

Use Scenario: Storing DICOM header metadata and acquisition parameters between MRI scan sessions.

IC Role / Device Role / Timing Role: High-reliability configuration store accessed by ARM Cortex-A9 application processor over static bus.

Use Value: Prevents parameter loss during unexpected power interruption, meeting IEC 62304 safety requirements.

Smart Energy Meters

Industrial Network Routers

Use Scenario: Recording tamper events, tariff switching logs, and metering registers with cryptographic timestamping.

IC Role / Device Role / Timing Role: Secure non-volatile memory mapped into microcontroller's external memory space for atomic write operations.

Use Value: Achieves >10¹⁴ write cycles needed for daily logging over 20+ year field life.

Use Scenario: Caching routing tables and port configuration states in Layer 3 industrial switches.

IC Role / Device Role / Timing Role: Fast-access persistent memory co-located with packet processor ASIC for sub-microsecond state recovery.

Use Value: Enables <10ms failover after power loss, satisfying IEC 61850 GOOSE timing constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile parallel memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress CY14B108L-BA45XI	8Mbit density, 45ns, 44-pin TSOP, same VCC range and interface protocol	Limited to 8Mbit; insufficient for large firmware image storage or extended log buffers	Select when footprint compatibility with legacy TSOP designs is mandatory and density ≤8Mbit suffices
Renesas M3032316035NX0PBCY	Same 32Mbit density and FBGA package, but 35ns timing and −40°C to +105°C rating	Higher speed and extended temperature support increase cost; unnecessary for ambient-controlled enclosures	Choose only if system requires faster access or operation above 85°C ambient

Compared with CY14B108L-BA45XI, M3032316045NX0ITBY provides 4× more capacity in identical FBGA footprint; compared with M3032316035NX0PBCY, it trades 10ns slower timing for lower cost and optimized thermal profile in standard industrial environments.

Availability

M3032316045NX0ITBY is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, and smart energy meters requiring stable component supply with guaranteed 10-year data retention and 10¹⁴ write endurance.

Supply support for M3032316045NX0ITBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M3xxx316 Parallel MRAM product line was designed to replace battery-backed SRAM and legacy nvSRAM in mission-critical industrial systems where data persistence, speed, and reliability cannot be compromised.

FAQ

What is the maximum operating temperature for M3032316045NX0ITBY?

M3032316045NX0ITBY is rated for industrial temperature range: −40°C to +85°C. This is confirmed in Table 17 (Thermal Resistance) and Section 4 (General Description) of the datasheet. Operation beyond +85°C requires the M3032316045NX0PBCY variant, which supports −40°C to +105°C.

Does M3032316045NX0ITBY require a backup power source or capacitor?

No, M3032316045NX0ITBY does not require any backup power source or capacitor. As a true non-volatile MRAM, it retains data indefinitely without power. The datasheet explicitly states "Data is always non-volatile" and confirms no battery or supercapacitor dependency in the General Description and Features sections.

Which package type is used by M3032316045NX0ITBY?

M3032316045NX0ITBY uses the 48-ball FBGA package (10mm × 10mm, balls-down), as indicated by the 'BC' package code in the part number ordering system (Page 5) and confirmed in Package Options (Page 9) and Valid Combinations (Page 6).

Can M3032316045NX0ITBY be used as a direct replacement for standard SRAM?

Yes, M3032316045NX0ITBY is functionally and electrically compatible with 45ns parallel x16 SRAMs. Its pinout, timing (tAVAV = 45ns), voltage range (2.7–3.6V), and bus protocol (E#/G#/W# control) match industry-standard SRAM interfaces, enabling drop-in replacement without PCB changes-provided the host system does not rely on volatility.

What is the write endurance specification for M3032316045NX0ITBY?

M3032316045NX0ITBY guarantees ≥10¹⁴ write cycles, as specified in Table 16 (Endurance and Data Retention). This value is independent of temperature and applies across the full operating range, eliminating wear-out concerns in high-frequency logging applications.

M3032316045NX0ITBY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 54-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Obsolete

Programmable:: -

Memory Type:: Non-Volatile

Memory Format:: RAM

Technology:: MRAM (Magnetoresistive RAM)

Memory Size:: 32Mbit

Memory Organization:: 2M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 45ns

Access Time:: 45 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-TSOP

M3032316045NX0ITBY FAQ

1.How can I place an order for M3032316045NX0ITBY through Aetrix?

Please submit a Request for Quotation (RFQ) for M3032316045NX0ITBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M3032316045NX0ITBY reliable?

The price and inventory of M3032316045NX0ITBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316045NX0ITBY is usually 5 days.

3.What payment methods are accepted for M3032316045NX0ITBY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316045NX0ITBY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M3032316045NX0ITBY?

M3032316045NX0ITBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M3032316045NX0ITBY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M3032316045NX0ITBY?

For technical support, including M3032316045NX0ITBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316045NX0ITBY requirements.

6.How does Aetrix verify that M3032316045NX0ITBY is sourced from the original manufacturer or authorized distributors?

All M3032316045NX0ITBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316045NX0ITBY meets industry standards.

7.What is the process for return or replacement of M3032316045NX0ITBY?

All M3032316045NX0ITBY units undergo pre-shipment inspection (PSI). If there is an issue with M3032316045NX0ITBY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M3032316045NX0ITBY part is unused and in its original packaging.

Return procedure for M3032316045NX0ITBY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…