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Renesas M3032316045NX0PBCR
- Part No.:
- M3032316045NX0PBCR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3032316045NX0PBCR.pdf
- Description:
- IC RAM 32MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,819
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Product details
Overview
M3032316045NX0PBCR from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile, SRAM-compatible random access for real-time data logging in factory automation controllers.
For engineers reviewing the M3032316045NX0PBCR datasheet, M3032316045NX0PBCR pinout, M3032316045NX0PBCR application, or M3032316045NX0PBCR equivalent, this page provides verified timing parameters, FBGA-48 package mapping, byte-enable control behavior, magnetic immunity specs, and direct alternatives for persistent memory replacement in safety-critical embedded systems.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random read/write without erase cycles. Its asynchronous parallel interface supports independent upper/lower byte enables (UB#/LB#) and operates with E#, G#, and W# control signals - identical in timing structure to legacy SRAM but with infinite write endurance and 10-year data retention at 105°C.
The device implements a full address decoder (ADDR[20:0] for 32Mbit), sense amplifier array, and I/O control logic that maintains high-impedance states during chip deselect or byte disable. Power-up initialization requires E#, W#, and G# to track VCC, and write inhibition activates below 2.1V (Vwi) to prevent corruption during brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 32Mbit (2,097,152 × 16 organization) |
| Access Time | 45ns read/write cycle - matches SRAM timing for drop-in replacement in legacy designs |
| Supply Voltage | 2.7V–3.6V - compatible with 3.3V industrial power rails and tolerant of ±10% variation |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive and industrial edge computing |
| Data Retention | 10 years at 105°C - eliminates backup battery or capacitor requirements |
| Write Endurance | 10¹⁴ cycles - supports continuous logging without wear leveling firmware |
| Magnetic Immunity | 24,000 A/m during read/write - withstands strong external fields near motors or transformers |
Pinout & Package
Package: 48-ball FBGA (10mm × 10mm, balls-down), RoHS/REACH compliant, thermal resistance θJA = 43.98°C/W (32Mb).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to avoid initialization failure |
| G# | Output Enable | Active-low control for DQ[15:0] output drivers; determines read vs. high-Z state |
| W# | Write Enable | Active-low signal selecting write mode; held high during reads to prevent accidental writes |
| UB# / LB# | Byte Enables | Independent active-low controls for upper (DQ[15:8]) and lower (DQ[7:0]) data bytes |
| ADDR[20:0] | Address Inputs | 21-bit address bus supporting full 32Mbit addressing; no address multiplexing required |
| DQ[15:0] | Bidirectional Data | 16-bit parallel I/O; high-impedance when E#, G#, or byte enables are inactive |
| VCC / VSS | Power/Ground | Single 3.3V supply rail; no separate I/O or core voltage domains |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM compatibility | Eliminates external backup power and simplifies BOM by replacing battery-backed SRAM |
| 40nm pMTJ STT-MRAM technology | Enables 32Mbit density in compact FBGA-48 while maintaining low 20mA write current |
| Industrial-plus temperature rating | Supports deployment in motor drives and base station equipment without derating |
| Byte-selectable write capability | Reduces system-level power consumption by writing only required 8-bit segments |
| 10¹⁴ write cycles endurance | Removes need for wear-leveling algorithms in firmware or controller logic |
Applications
| Factory Automation PLC | Medical Diagnostic Imaging |
|---|---|
Use Scenario: Real-time logging of sensor inputs and motion control commands in programmable logic controllers with zero tolerance for data loss during power interruption. IC Role / Device Role / Timing Role: Non-volatile program/data memory storing ladder logic and I/O state snapshots on every scan cycle. Use Value: Guarantees deterministic 45ns write latency and 10-year retention without battery maintenance or supercapacitor charging circuits. | Use Scenario: Storing calibration coefficients and image buffer metadata in portable ultrasound and MRI subsystems requiring FDA-compliant data integrity. IC Role / Device Role / Timing Role: Persistent configuration memory holding sensor gain tables and DICOM header templates across cold starts. Use Value: Delivers 24,000 A/m magnetic immunity to prevent corruption near MRI magnets and satisfies IEC 60601-1 leakage current limits via 1.7mA standby current. |
| Smart Grid Metering | Industrial Ethernet Switch |
Use Scenario: Tamper-proof energy consumption history storage in ANSI C12.22-compliant smart meters deployed in outdoor substations. IC Role / Device Role / Timing Role: Secure, write-enduring memory for time-stamped kWh registers and firmware update staging. Use Value: Achieves 10-year data retention at 105°C ambient - exceeding IEEE 1377 thermal requirements without thermal derating. | Use Scenario: Storing MAC address tables, port configuration, and packet buffer descriptors in managed switches operating in factory-floor cabinets. IC Role / Device Role / Timing Role: High-speed configuration memory enabling sub-microsecond register updates during link renegotiation. Use Value: Provides 35ns/45ns read/write symmetry - eliminating pipeline stalls during dynamic QoS table rewrites. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR32A08A | 32Mbit, 45ns, 48-ball FBGA, same VCC range and temperature grade; differs in pinout (no dedicated LB#/UB# - uses DQM instead) | Requires PCB layout change due to different byte-enable signaling and address pin assignment | Select when migrating from Everspin-based designs or when DQM-based byte masking aligns with existing controller IP |
| Cypress Semiconductors FM32-S32 | 32Mbit, 45ns, 48-ball FBGA, −40°C to +105°C; uses different command protocol (no W#/G# separation - single WE#) | Needs firmware adaptation for control signal timing and lacks independent upper/lower byte enables | Choose for Cypress ecosystem integration or where simplified control logic reduces MCU GPIO usage |
Compared with M3032316045NX0PBCR, MR32A08A requires board redesign for pin compatibility but offers identical endurance and retention, while FM32-S32 reduces control complexity at the cost of flexible byte-write granularity - making M3032316045NX0PBCR optimal for SRAM-drop-in upgrades demanding minimal firmware and layout changes.
Availability
M3032316045NX0PBCR is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, smart grid metering, and industrial Ethernet switches requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for M3032316045NX0PBCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically to replace battery-backed SRAM and NOR Flash in mission-critical embedded systems requiring instant-write non-volatility, high temperature resilience, and deterministic timing.
FAQ
What is the maximum operating temperature specification for M3032316045NX0PBCR?
M3032316045NX0PBCR is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC standards and confirmed in Table 16 (Data Retention) and Table 7 (Electrical Specifications), where retention is guaranteed for 10 years at 105°C ambient. The device's thermal resistance (θJA = 43.98°C/W) ensures safe junction temperatures under typical industrial airflow conditions.
Does M3032316045NX0PBCR require a backup power source or capacitor for data retention?
No, M3032316045NX0PBCR does not require any backup power source, capacitor, or battery. As a magneto-resistive RAM, it retains data inherently through magnetic domain orientation. Its 10-year data retention at 105°C (Table 16) and infinite write endurance (10¹⁴ cycles) eliminate all need for auxiliary power circuitry - a key advantage over battery-backed SRAM or EEPROM.
How many address pins does M3032316045NX0PBCR use, and what is the full address range?
M3032316045NX0PBCR uses 21 address pins (ADDR[20:0]) to access its full 32Mbit capacity (2,097,152 × 16 organization). This is explicitly stated in Page 8 (Signal Description) and Page 14 (Architecture), confirming direct linear addressing without multiplexing - matching standard parallel SRAM interface expectations.
What is the function of UB# and LB# pins on M3032316045NX0PBCR, and how do they differ from standard SRAM?
UB# (Upper Byte Enable) and LB# (Lower Byte Enable) are active-low signals controlling DQ[15:8] and DQ[7:0], respectively. Unlike many SRAMs that use a single byte-enable or rely on processor-side masking, M3032316045NX0PBCR allows independent read/write of upper or lower bytes - reducing system power and enabling efficient 8-bit peripheral interfacing without full 16-bit bus transactions.
Is M3032316045NX0PBCR pin-compatible with other devices in the M3xxx316 family?
M3032316045NX0PBCR shares the same 48-ball FBGA package and pinout with all M3xxx316 variants using BC package code (e.g., M3004316045NX0PBCR, M3016316045NX0PBCR), as confirmed in Page 10 (48-Ball FBGA top view) and Page 5 (Ordering System). However, address pin count varies by density - 32Mbit requires ADDR[20:0], while 4Mbit uses only ADDR[17:0] - so firmware must validate address width alignment.
M3032316045NX0PBCR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3032316045NX0PBCR FAQ
1.How can I place an order for M3032316045NX0PBCR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316045NX0PBCR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316045NX0PBCR reliable?
The price and inventory of M3032316045NX0PBCR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316045NX0PBCR is usually 5 days.
3.What payment methods are accepted for M3032316045NX0PBCR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316045NX0PBCR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3032316045NX0PBCR?
M3032316045NX0PBCR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316045NX0PBCR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316045NX0PBCR?
For technical support, including M3032316045NX0PBCR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316045NX0PBCR requirements.
6.How does Aetrix verify that M3032316045NX0PBCR is sourced from the original manufacturer or authorized distributors?
All M3032316045NX0PBCR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316045NX0PBCR meets industry standards.
7.What is the process for return or replacement of M3032316045NX0PBCR?
All M3032316045NX0PBCR units undergo pre-shipment inspection (PSI). If there is an issue with M3032316045NX0PBCR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316045NX0PBCR part is unused and in its original packaging.
Return procedure for M3032316045NX0PBCR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316045NX0PBCR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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