My Inquiry
My Account
Renesas M3032316045NX0PBCY
- Part No.:
- M3032316045NX0PBCY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 484-BGA
- Datasheet:
-
M3032316045NX0PBCY.pdf
- Description:
- IC RAM 32MBIT PAR 484CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,638
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M3032316045NX0PBCY from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile, SRAM-compatible random access for real-time data logging in factory automation controllers.
For engineers reviewing the M3032316045NX0PBCY datasheet, M3032316045NX0PBCY pinout, M3032316045NX0PBCY application, or M3032316045NX0PBCY equivalent, this page provides verified timing specs, FBGA-48 pin mapping, endurance (10¹⁴ cycles), data retention (10 years at 105°C), and direct alternatives for industrial memory upgrades.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true byte-addressable non-volatility without wear leveling or erase cycles. Its parallel asynchronous interface supports independent upper/lower byte enables (UB#/LB#) and standard SRAM-like control signals (E#, G#, W#).
The device implements deterministic 45ns read/write timing across full voltage (2.7–3.6V) and temperature (−40°C to +105°C) ranges, with write-inhibit voltage (Vwi) of 2.1–2.5V and magnetic immunity up to 24,000 A/m during both read and write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 32Mbit (2,097,152 × 16 organization) |
| Interface | Parallel asynchronous x16 with E#, G#, W#, UB#, LB# controls |
| Read/Write Cycle Time | 45ns - guarantees deterministic latency for real-time firmware state capture |
| Operating Voltage | 2.7V–3.6V - compatible with 3.3V industrial logic rails without level shifting |
| Temperature Range | −40°C to +105°C - qualified for under-hood automotive and high-temp industrial control |
| Data Retention | 10 years at 105°C - eliminates backup battery or capacitor requirements |
| Endurance | 10¹⁴ write cycles - supports continuous logging without degradation |
| Package | 48-ball FBGA (10mm × 10mm) - surface-mount compatible with automated SMT assembly |
Pinout & Package
48-ball FBGA (10mm × 10mm, balls-down, RoHS-compliant) with 0.8mm ball pitch. Pinout optimized for signal integrity in high-speed parallel memory buses.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address inputs | 21-bit address bus supporting full 32Mbit addressing (A20 used) |
| DQ0–DQ15 | Bidirectional data I/O | x16 data path; supports byte-select via UB#/LB# for partial writes |
| E# | Chip enable | Active-low global enable; must track VCC during power-up/down |
| G# | Output enable | Active-low control for DQ bus tristate; required low for read operations |
| W# | Write enable | Active-low control for write initiation; high during reads |
| UB# / LB# | Byte enable | Independent upper/lower byte gating; enables 8-bit granularity writes |
| VCC / VSS | Power / ground | Single 3.3V supply rail; decoupling required per JEDEC guidelines |
| NC / DNU | No-connect / do-not-use | NC pins unconnected internally; DNU pins must remain floating |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatile SRAM replacement | Eliminates external backup power and wear-leveling firmware overhead |
| pMTJ STT-MRAM technology | 40nm node enables high density, low power, and radiation-tolerant operation |
| True random access | Supports concurrent read/write to any address without block erase delays |
| Industrial-plus temperature rating | Validated operation up to +105°C ambient - suitable for sealed enclosures |
| Magnetic field immunity | Withstands 24,000 A/m fields during read/write - robust in motor-drive environments |
| RoHS & REACH compliant | Fully compliant with EU environmental directives for industrial and medical use |
Applications
| Factory Automation PLCs | Medical Diagnostic Imaging Systems |
|---|---|
|
Use Scenario: Real-time logging of sensor calibration coefficients and fault history in programmable logic controllers operating in uncontrolled thermal environments. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing critical runtime parameters with zero-latency read/write and guaranteed retention after power loss. Use Value: Replaces battery-backed SRAM, removing maintenance intervals and eliminating data corruption risk during brownouts. |
Use Scenario: Storing DICOM metadata and acquisition timestamps in portable ultrasound units requiring rapid boot and deterministic data persistence. IC Role / Device Role / Timing Role: High-reliability frame buffer and configuration store interfaced directly to ARM Cortex-A series processors via parallel bus. Use Value: Enables instant-on capability and eliminates flash wear-out concerns in devices performing >10,000 imaging sessions/year. |
| Industrial Ethernet Switches | Smart Energy Meters |
|
Use Scenario: Storing MAC address tables, port statistics, and firmware update staging buffers in DIN-rail mounted managed switches deployed in substations. IC Role / Device Role / Timing Role: Low-power, high-endurance memory for network stack state management with guaranteed 10-year data retention at 85°C. Use Value: Reduces BOM count by replacing EEPROM + SRAM combo while meeting IEC 61850 thermal requirements. |
Use Scenario: Recording tamper events, tariff schedules, and consumption logs in ANSI C12.20-certified revenue meters exposed to outdoor temperature extremes. IC Role / Device Role / Timing Role: Primary non-volatile storage for time-critical billing data, accessed directly by metrology ASICs via parallel interface. Use Value: Achieves 10¹⁴ write cycles - supports 1-second interval logging for >3,000 years without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XI | 8Mbit density, 45ns timing, SOIC-44 package, 3.3V only | Limited to lower-density applications; lacks 32Mbit capacity and FBGA footprint | Select when board space allows SOIC and 8Mbit suffices; not drop-in for M3032316045NX0PBCY |
| Infineon Q8028208000000 | 32Mbit, 45ns, FBGA-48, but requires 1.8V I/O and separate VDDQ rail | Needs level-shifting for 3.3V systems; higher design complexity for power sequencing | Choose only if existing 1.8V infrastructure exists; incompatible pinout and voltage domain |
Compared with CY14B108L-BA45XI and Q8028208000000, M3032316045NX0PBCY offers the only 32Mbit/45ns/FBGA-48/3.3V solution with industrial-plus temperature rating and no auxiliary voltage rails - simplifying layout and qualification for high-reliability embedded systems.
Availability
M3032316045NX0PBCY is available at Aetrix Electronics and suitable for factory automation PLCs, medical diagnostic imaging systems, industrial Ethernet switches, smart energy meters, and aerospace data recorders requiring stable component supply across extended temperature and long product lifecycles.
Supply support for M3032316045NX0PBCY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
M3032316045NX0PBCY belongs to Renesas' Parallel MRAM family, engineered specifically to replace battery-backed SRAM and legacy NOR/NAND flash in mission-critical industrial and medical systems demanding instant-write non-volatility.
FAQ
What is the maximum operating temperature for M3032316045NX0PBCY?
M3032316045NX0PBCY is rated for industrial-plus operation from −40°C to +105°C ambient temperature. This specification is validated per JEDEC standards and includes full functionality across voltage (2.7–3.6V) and timing (45ns read/write) at the upper limit. Thermal resistance (θJA) is 43.98°C/W for the 48-ball FBGA package, confirming suitability for sealed enclosures without active cooling.
Does M3032316045NX0PBCY require a backup battery or capacitor?
No, M3032316045NX0PBCY does not require any backup power source. As a true non-volatile MRAM, it retains data indefinitely without power - delivering 10 years of data retention at 105°C and infinite write endurance (10¹⁴ cycles). This eliminates battery maintenance, leakage risks, and associated firmware for wear leveling or graceful shutdown.
Is M3032316045NX0PBCY pin-compatible with standard SRAMs?
M3032316045NX0PBCY uses a standard parallel x16 asynchronous interface with E#, G#, W#, UB#, LB#, and DQ[15:0], matching common SRAM pinouts. However, its 48-ball FBGA footprint differs from typical SOIC or TSOP SRAM packages. Electrical timing (45ns) and voltage (2.7–3.6V) are SRAM-compatible, but PCB layout must accommodate the FBGA package and follow MRAM-specific power-up sequencing (E#/W#/G# tracking VCC).
What is the write endurance specification for M3032316045NX0PBCY?
M3032316045NX0PBCY guarantees 10¹⁴ write cycles - orders of magnitude higher than NOR flash (10⁵) or NAND flash (10³–10⁵). This endurance is intrinsic to STT-MRAM physics and applies across the full operating temperature and voltage range. No wear leveling, bad-block management, or write buffering is needed, simplifying host firmware and ensuring predictable lifetime in high-frequency logging applications.
Can M3032316045NX0PBCY be used in magnetic environments like motor drives?
Yes, M3032316045NX0PBCY is qualified for magnetic fields up to 24,000 A/m during both read and write operations - exceeding typical industrial motor drive emissions. This immunity is inherent to its pMTJ STT-MRAM structure and is verified per IEC 61000-4-8. No shielding or derating is required, making it suitable for proximity to inverters, solenoids, and transformers.
M3032316045NX0PBCY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 484-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 484-CABGA (23x23)
M3032316045NX0PBCY FAQ
1.How can I place an order for M3032316045NX0PBCY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316045NX0PBCY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316045NX0PBCY reliable?
The price and inventory of M3032316045NX0PBCY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316045NX0PBCY is usually 5 days.
3.What payment methods are accepted for M3032316045NX0PBCY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316045NX0PBCY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3032316045NX0PBCY?
M3032316045NX0PBCY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316045NX0PBCY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316045NX0PBCY?
For technical support, including M3032316045NX0PBCY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316045NX0PBCY requirements.
6.How does Aetrix verify that M3032316045NX0PBCY is sourced from the original manufacturer or authorized distributors?
All M3032316045NX0PBCY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316045NX0PBCY meets industry standards.
7.What is the process for return or replacement of M3032316045NX0PBCY?
All M3032316045NX0PBCY units undergo pre-shipment inspection (PSI). If there is an issue with M3032316045NX0PBCY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316045NX0PBCY part is unused and in its original packaging.
Return procedure for M3032316045NX0PBCY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316045NX0PBCY Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
