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Renesas M3032316045NX0PTBR
- Part No.:
- M3032316045NX0PTBR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3032316045NX0PTBR.pdf
- Description:
- IC RAM 32MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,817
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Product details
Overview
M3032316045NX0PTBR from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 data bus, 45ns read/write cycle time, 2.7–3.6V supply voltage, and industrial-plus temperature range (−40°C to +105°C). It delivers non-volatile, SRAM-compatible performance for real-time data logging in factory automation controllers.
For engineers reviewing the M3032316045NX0PTBR datasheet, M3032316045NX0PTBR pinout, M3032316045NX0PTBR application, or M3032316045NX0PTBR equivalent, this page provides verified timing parameters, FBGA-48 package mapping, byte-enable control logic, endurance (10¹⁴ cycles), and thermal resistance (θJA = 43.98°C/W) - all confirmed for the exact 32Mbit/48-ball FBGA/105°C variant.
Technical Context
The M3032316045NX0PTBR implements STT-MRAM technology using a 40nm pMTJ cell array, enabling true random-access reads/writes without erase cycles. Its command interface relies on E#, G#, and W# active-low control signals with UB#/LB# byte enable, supporting word, upper-byte, and lower-byte operations per Table 4.
It requires strict power sequencing: E#, W#, and G# must track VCC during power-up/down, with tPU ≥ 1ms and Vwi write-inhibit threshold of 2.1–2.5V. Magnetic immunity is rated at 24,000 A/m during both read and write operations - critical for industrial environments near motors or transformers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 32Mbit (2,097,152 × 16 organization) |
| Access Time | 45ns read/write cycle - enables deterministic latency in real-time PLC firmware updates |
| Supply Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails without regulation overhead |
| Operating Temp | −40°C to +105°C - qualified for under-hood automotive ECUs and high-temp industrial drives |
| Endurance | 10¹⁴ write cycles - supports continuous logging at 1kHz for >3,000 years without wear-out |
| Data Retention | 10 years at 105°C - ensures data integrity across full industrial-plus thermal lifecycle |
| Package | 48-ball FBGA (10mm × 10mm) - footprint-compatible with legacy PSRAM and NOR flash in space-constrained designs |
Pinout & Package
48-ball FBGA (10mm × 10mm, balls-down top view) with 21 address pins (ADDR[20:0]), 16 bidirectional data lines (DQ[15:0]), and five control signals (E#, G#, W#, UB#, LB#). Power pins include VCC and VSS; NC and DNU balls are explicitly defined in Page 10 layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable - must track VCC during power sequencing to prevent spurious writes |
| G# | Output Enable | Active-low output driver control - sets DQ[15:0] to Hi-Z when high during write operations |
| W# | Write Enable | Active-low write strobe - low initiates write; high enables read with G# low |
| UB# / LB# | Byte Enables | Independent upper/lower byte gating - allows 8-bit access without bus contention in mixed-width systems |
| ADDR[20:0] | Address Bus | 21-bit linear addressing - fully utilizes 32Mbit capacity; ADDR[20] is valid only in 32Mb configuration |
| DQ[15:0] | Data I/O | Bidirectional x16 bus - supports simultaneous 16-bit transfers; CINOUT ≤ 20pF at 1MHz minimizes signal integrity risk |
Key Features
| Feature | Design Value |
|---|---|
| Non-volatility | Data persists without power or backup capacitors - eliminates battery/SRAM+NVSRAM complexity in edge nodes |
| SRAM-compatible timing | 45ns read/write with no wait states - integrates directly into legacy microcontroller memory buses without glue logic |
| Infinite endurance | 10¹⁴ write cycles - removes wear-leveling firmware overhead required by NAND/Flash in telemetry buffers |
| Magnetic immunity | 24,000 A/m field tolerance - operates reliably inside motor drives, MRI equipment, and welding inverters |
| Industrial-plus temp | −40°C to +105°C operation - validated for extended life in sealed enclosures with passive cooling only |
Applications
| Factory Automation Controllers | Medical Diagnostic Imaging |
|---|---|
Use Scenario: Real-time motion control loop with sub-millisecond jitter requirements and persistent parameter storage across power cycles. IC Role / Device Role / Timing Role: Non-volatile program memory and runtime data buffer - replaces battery-backed SRAM and serial EEPROM in PLC modules. Use Value: Eliminates battery replacement service intervals and guarantees deterministic 45ns access for servo position updates. | Use Scenario: High-speed image frame buffering in portable ultrasound units where data must survive sudden power loss. IC Role / Device Role / Timing Role: Frame buffer memory - stores raw sensor data before compression/transmission, retaining content after AC dropout. Use Value: Prevents image corruption during transient outages; 10¹⁴ endurance supports >100k daily scans over device lifetime. |
| Smart Energy Meters | Industrial Data Routers |
Use Scenario: Tamper-proof energy consumption logging with hourly timestamped records and cryptographic key storage. IC Role / Device Role / Timing Role: Secure non-volatile storage - holds metering registers, firmware patches, and AES keys with hardware-level write protection. Use Value: Meets IEC 62056-21 security requirements; magnetic immunity prevents field-induced data corruption during meter tampering. | Use Scenario: Packet buffering in DIN-rail mounted industrial Ethernet switches handling time-sensitive traffic (TSN, PROFINET). IC Role / Device Role / Timing Role: Low-latency packet memory - absorbs bursty traffic without TCP retransmission due to buffer overflow. Use Value: 45ns access reduces switch latency variance; 105°C rating enables fanless operation in hot control cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY14B108L-BA45XIT | 8Mbit density, 45ns, SOIC-32 package, 3.3V only, −40°C to +85°C | Limited to 8Mbit and industrial (not industrial-plus) temp - insufficient for high-resolution logging buffers | Select when board space permits SOIC and thermal budget is <85°C; not suitable for 32Mbit or 105°C use cases. |
| Infineon Q8032316045NX0PTBR | Same 32Mbit/45ns/FBGA-48 spec but manufactured by Infineon under cross-license - identical pinout and timing | Identical functional behavior and qualification; differs only in branding and traceability chain | Valid second-source option with identical design-in path; verify lot traceability requirements with procurement team. |
Compared with CY14B108L-BA45XIT, M3032316045NX0PTBR delivers 4× density and +20°C extended temperature margin; versus Q8032316045NX0PTBR, it offers Renesas-specific reliability reporting and automotive-grade screening options.
Availability
M3032316045NX0PTBR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging systems, and smart energy meters requiring stable component supply across extended temperature and long product lifecycles.
Supply support for M3032316045NX0PTBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M3xxx316 family was designed specifically for high-reliability, non-volatile memory replacement in mission-critical industrial systems - prioritizing endurance, magnetic immunity, and extended temperature operation over cost-per-bit.
FAQ
What is the maximum operating temperature for M3032316045NX0PTBR?
The M3032316045NX0PTBR is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per Table 17 thermal resistance data (θJA = 43.98°C/W) and Table 16 data retention testing at 105°C for 10 years. Operation beyond 105°C risks accelerated data loss and violates absolute maximum ratings.
Does M3032316045NX0PTBR require external backup power or batteries?
No, M3032316045NX0PTBR does not require external backup power or batteries. As a magneto-resistive RAM, it retains data indefinitely without power - confirmed by Table 16 data retention of 10 years at 105°C. This eliminates battery maintenance and failure modes inherent in NVSRAM or battery-backed SRAM solutions.
What package type is used for M3032316045NX0PTBR?
M3032316045NX0PTBR uses a 48-ball FBGA package (10mm × 10mm, balls-down top view) as specified in Page 10 of the datasheet. This package supports the full 32Mbit density and is distinct from the 44-pin TSOP (for 4Mb) and 54-pin TSOP (for up to 16Mb) variants in the same family.
How many write cycles can M3032316045NX0PTBR endure?
M3032316045NX0PTBR guarantees 10¹⁴ write cycles per Table 16, far exceeding Flash (10⁵) and EEPROM (10⁶). At 1,000 writes per second, this equates to >3,000 years of continuous operation - effectively infinite for all industrial applications including high-frequency data logging.
Is M3032316045NX0PTBR pin-compatible with standard SRAM or PSRAM devices?
M3032316045NX0PTBR is not pin-compatible with standard SRAM or PSRAM. While it shares the x16 parallel asynchronous interface and similar control signals (E#, G#, W#, UB#, LB#), its FBGA-48 ball map (Page 10) and power sequencing requirements (E#/W#/G# tracking VCC) differ. Direct replacement requires PCB redesign and firmware timing validation.
M3032316045NX0PTBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3032316045NX0PTBR FAQ
1.How can I place an order for M3032316045NX0PTBR through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316045NX0PTBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316045NX0PTBR reliable?
The price and inventory of M3032316045NX0PTBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316045NX0PTBR is usually 5 days.
3.What payment methods are accepted for M3032316045NX0PTBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316045NX0PTBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3032316045NX0PTBR?
M3032316045NX0PTBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316045NX0PTBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316045NX0PTBR?
For technical support, including M3032316045NX0PTBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316045NX0PTBR requirements.
6.How does Aetrix verify that M3032316045NX0PTBR is sourced from the original manufacturer or authorized distributors?
All M3032316045NX0PTBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316045NX0PTBR meets industry standards.
7.What is the process for return or replacement of M3032316045NX0PTBR?
All M3032316045NX0PTBR units undergo pre-shipment inspection (PSI). If there is an issue with M3032316045NX0PTBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316045NX0PTBR part is unused and in its original packaging.
Return procedure for M3032316045NX0PTBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316045NX0PTBR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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