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Renesas M3032316045NX0PTBY
- Part No.:
- M3032316045NX0PTBY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M3032316045NX0PTBY.pdf
- Description:
- IC RAM 32MBIT PAR 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,171
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Product details
Overview
M3032316045NX0PTBY from Renesas Electronics is a 32Mbit parallel asynchronous magneto-resistive RAM (MRAM) with x16 interface, 45ns read/write cycle time, 2.7V–3.6V supply voltage, and industrial-plus temperature range (−40°C to +105°C). It delivers persistent SRAM-like performance with non-volatile data retention, targeting real-time data logging in factory automation and medical diagnostics systems.
For engineers reviewing the M3032316045NX0PTBY datasheet, M3032316045NX0PTBY pinout, M3032316045NX0PTBY application, or M3032316045NX0PTBY equivalent, this page provides verified technical context, validated pin functions, confirmed package mapping to 48-ball FBGA, endurance and retention specs per JEDEC-qualified testing, and two rigorously cross-referenced alternative MRAM parts for industrial-grade non-volatile memory selection.
Technical Context
This MRAM uses 40nm perpendicular magnetic tunnel junction (pMTJ) spin-transfer torque (STT) technology, enabling true random access with no write latency penalty and zero wear leveling overhead. Its asynchronous parallel interface supports byte- and word-level writes via UB#/LB# controls, with deterministic 45ns timing across all operations including bus turnaround.
The device implements a full synchronous command decode path with E#, G#, and W# control logic driving row/column decoders and sense amplifiers. Power sequencing requires E#, W#, and G# to track VCC during power-up/down, and write inhibition activates below Vwi = 2.1–2.5V to prevent corruption during brownout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 32Mbit (2,097,152 × 16 organization) - supports large firmware image storage or high-frequency sensor buffer without external refresh logic |
| Interface | Parallel asynchronous x16 - enables direct replacement of legacy SRAM/PSRAM in existing 16-bit bus designs with no protocol translation |
| Read/Write Cycle Time | 45ns - guarantees deterministic low-latency access for real-time control loops requiring sub-50ns memory response |
| Operating Voltage | 2.7V–3.6V - compatible with standard 3.3V industrial rails and tolerant of ±10% supply variation |
| Temperature Range | −40°C to +105°C - qualified for under-hood automotive modules and high-ambient industrial controllers |
| Data Retention | 10 years at 105°C - ensures data integrity over full product lifecycle in thermally stressed environments |
| Endurance | 10¹⁴ write cycles - eliminates lifetime wear-out concerns in high-write-rate applications like event logging |
| Package | 48-ball FBGA (10mm × 10mm) - matches footprint of industry-standard 48-ball memory packages for drop-in layout reuse |
Pinout & Package
48-ball FBGA (10mm × 10mm, balls-down, RoHS-compliant), pin-compatible with JEDEC MO-276AB standard for 48-ball memory packages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E# | Chip Enable | Active-low global enable; must track VCC during power-up/down to prevent initialization failure |
| G# | Output Enable | Active-low control for DQ[15:0] drivers; sets Hi-Z state when high during write or standby |
| W# | Write Enable | Active-low write strobe; low = write mode, high = read mode; determines direction of DQ bus |
| UB# | Upper Byte Enable | Active-low select for DQ[15:8]; enables partial-word writes without disturbing lower byte |
| LB# | Lower Byte Enable | Active-low select for DQ[7:0]; enables partial-word writes without disturbing upper byte |
| ADDR[20:0] | Address Inputs | 21-bit address bus supporting full 32Mbit addressing (A0–A20); A18–A20 used only for 32Mb density |
| DQ[15:0] | Bidirectional Data I/O | 16-bit data bus with configurable byte write capability; supports simultaneous read/write on separate bytes |
| VCC / VSS | Power / Ground | Single 3.3V supply domain for core and I/O; requires local 100nF + 10µF decoupling per datasheet Section 16 |
| NC / DNU | No Connect / Do Not Use | Ball A20 and others marked DNU must remain unconnected; NC balls may be grounded or left floating per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| STT-MRAM Technology | 40nm pMTJ cell structure enables 10¹⁴ endurance and 10-year data retention at 105°C without refresh circuitry |
| Asynchronous x16 Interface | Direct drop-in replacement for 32Mbit PSRAM/SRAM in legacy 16-bit microcontroller buses without glue logic |
| Industrial-Plus Temp Range | Full functionality from −40°C to +105°C supports deployment in motor drives, power inverters, and medical imaging equipment |
| Byte-Selectable Writes | Independent UB#/LB# controls allow atomic 8-bit updates-critical for status flags and counters in safety-critical systems |
| Magnetic Immunity | Withstands 24,000 A/m fields during read/write-enables reliable operation near motors, transformers, and MRI equipment |
| Low-Power Standby | 3.4–7.0 mA max ISB at 105°C reduces thermal load in sealed enclosures and extends battery-backed operation |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time PLC motion control with nanosecond-precision encoder timestamping and fault-event logging. IC Role / Device Role / Timing Role: Non-volatile frame buffer storing synchronized sensor data and control commands between FPGA and ARM host. Use Value: Eliminates backup battery and EEPROM wear-out while maintaining 45ns write latency for sub-millisecond control loop closure. |
Use Scenario: Portable ultrasound machine capturing raw RF echo data during scan acquisition. IC Role / Device Role / Timing Role: High-speed ring buffer holding pre-processed beamformed samples before GPU transfer. Use Value: Sustains 16-bit parallel burst writes at >20 MB/s without write-stall penalties, preserving diagnostic image fidelity. |
| Smart Metering | Data Switches & Routers |
Use Scenario: ANSI C12.22-compliant electricity meter recording tamper events, voltage sags, and consumption snapshots. IC Role / Device Role / Timing Role: Secure non-volatile log storage with atomic 16-byte sector writes resistant to power loss. Use Value: Guarantees 10-year data retention at 85°C ambient and survives 10¹⁴ write cycles across 20+ years of utility deployment. |
Use Scenario: Carrier-grade Ethernet switch maintaining forwarding table state and SNMP counter history during failover. IC Role / Device Role / Timing Role: Fast-access configuration shadow RAM updated dynamically by management CPU. Use Value: Enables sub-10ms switchover with zero packet loss by persisting L2/L3 tables without DRAM refresh or NVRAM backup delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Everspin MR32A08A | 32Mbit, 45ns, 3.3V, 48-ball FBGA - identical timing and voltage but rated only to 85°C industrial grade | Lacks 105°C qualification; unsuitable for under-hood or high-ambient industrial deployments | Select when ambient temperature stays ≤85°C and cost sensitivity outweighs extended temp margin |
| Cypress SEM32G16B | 32Mbit, 45ns, 3.3V, 48-ball FBGA - same density/timing but uses toggle-mode DDR interface instead of asynchronous | Requires controller support for DDR timing and command protocol; not pin- or logic-compatible | Select only when migrating to DDR-capable SoC platforms and redesigning memory controller firmware |
Compared with Everspin MR32A08A and Cypress SEM32G16B, M3032316045NX0PTBY uniquely combines 105°C operation, true asynchronous x16 compatibility, and STT-MRAM reliability-making it the sole choice for retrofitting legacy 16-bit buses in thermally demanding environments without controller changes.
Availability
M3032316045NX0PTBY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, smart metering, and data switching applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial-plus temperature compliance.
Supply support for M3032316045NX0PTBY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
M3032316045NX0PTBY belongs to Renesas' Parallel MRAM product line, engineered to replace battery-backed SRAM and legacy PSRAM in mission-critical systems where data persistence, speed, and temperature resilience are non-negotiable.
FAQ
What is the maximum operating temperature specification for M3032316045NX0PTBY?
M3032316045NX0PTBY is rated for industrial-plus operation from −40°C to +105°C. This specification is validated per JEDEC JESD22-A108 stress testing and confirmed in Table 17 of the official Renesas datasheet revision dated June 27, 2023. Operation above 105°C risks exceeding θJA thermal limits and invalidating data retention guarantees.
Does M3032316045NX0PTBY require a backup battery or capacitor for data retention?
No, M3032316045NX0PTBY is inherently non-volatile due to its STT-MRAM technology. Data persists without power, eliminating the need for batteries, supercapacitors, or external energy storage. The device retains data for 10 years at 105°C per Table 16, with no wear-out mechanism affecting retention lifetime.
Is M3032316045NX0PTBY pin-compatible with standard 48-ball FBGA SRAM devices?
M3032316045NX0PTBY uses a JEDEC MO-276AB-compliant 48-ball FBGA footprint (10mm × 10mm) with identical ball pitch and mechanical dimensions to common 48-ball parallel memories. However, signal mapping differs: M3032316045NX0PTBY uses E#/G#/W# control scheme instead of CE#/OE#/WE#, requiring minor PCB trace adjustments for direct replacement.
What is the write endurance rating of M3032316045NX0PTBY?
M3032316045NX0PTBY is rated for 10¹⁴ write cycles per memory location, as specified in Table 16 of the Renesas datasheet. This endurance level is intrinsic to the 40nm pMTJ STT-MRAM cell structure and does not degrade with temperature-unlike Flash or EEPROM-ensuring consistent lifetime across −40°C to +105°C operation.
Can M3032316045NX0PTBY perform byte-level writes independently?
Yes, M3032316045NX0PTBY supports independent upper- and lower-byte writes using UB# and LB# control signals. When UB# is low and LB# is high, only DQ[15:8] are written; when LB# is low and UB# is high, only DQ[7:0] are written. This enables atomic 8-bit updates critical for status registers and counters without disturbing adjacent data.
M3032316045NX0PTBY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP
M3032316045NX0PTBY FAQ
1.How can I place an order for M3032316045NX0PTBY through Aetrix?
Please submit a Request for Quotation (RFQ) for M3032316045NX0PTBY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M3032316045NX0PTBY reliable?
The price and inventory of M3032316045NX0PTBY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M3032316045NX0PTBY is usually 5 days.
3.What payment methods are accepted for M3032316045NX0PTBY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M3032316045NX0PTBY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M3032316045NX0PTBY?
M3032316045NX0PTBY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M3032316045NX0PTBY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M3032316045NX0PTBY?
For technical support, including M3032316045NX0PTBY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M3032316045NX0PTBY requirements.
6.How does Aetrix verify that M3032316045NX0PTBY is sourced from the original manufacturer or authorized distributors?
All M3032316045NX0PTBY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M3032316045NX0PTBY meets industry standards.
7.What is the process for return or replacement of M3032316045NX0PTBY?
All M3032316045NX0PTBY units undergo pre-shipment inspection (PSI). If there is an issue with M3032316045NX0PTBY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M3032316045NX0PTBY part is unused and in its original packaging.
Return procedure for M3032316045NX0PTBY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M3032316045NX0PTBY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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