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STMicroelectronics M36DR432AD10ZA6T
- Part No.:
- M36DR432AD10ZA6T
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 66-LFBGA
- Datasheet:
-
M36DR432AD10ZA6T.pdf
- Description:
- IC FLASH 32MBIT PARALLEL 66LFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,814
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Product details
Overview
M36DR432AD10ZA6T from STMicroelectronics is a stacked monolithic multiple memory device integrating a 32 Mbit (2Mb × 16) dual-bank Flash memory and a 4 Mbit (256Kb × 16) SRAM in a single LFBGA66 package. It supports asynchronous page-mode reads (35 ns page access), dual-bank concurrent operations, and 1.65–2.2 V core supply for both memory banks. Used in embedded boot code storage with runtime data buffering in telecom baseband modules.
For engineers reviewing the M36DR432AD10ZA6T datasheet, M36DR432AD10ZA6T pinout, M36DR432AD10ZA6T application, or M36DR432AD10ZA6T equivalent, key selection criteria include dual-bank interleaved read/write capability, CFI-compliant Flash interface, low-voltage 1.65–2.2 V operation, and stacked LFBGA66 mechanical compatibility with space-constrained PCB layouts.
Technical Context
This device implements two independent memory subsystems sharing address/data bus lines but with separate chip enables (EF/ES), write enables (WF/WS), and output enables (GF/GS). Flash bank architecture comprises one 4 Mbit parameter block and one 28 Mbit main block, supporting top- or bottom-boot configurations per device variant.
It features hardware-level block locking via WPF, erase suspend/resume, and status polling via DQ7/DQ6/DQ2. The SRAM supports byte-level writes using UBS/LBS and retains data down to 1.0 V VDDS, enabling low-power retention modes during system sleep states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Flash Capacity | 32 Mbit (2Mb × 16), dual-bank: 4 Mbit + 28 Mbit - enables simultaneous firmware execution and update without halting operation |
| SRAM Capacity | 4 Mbit (256Kb × 16) - provides dedicated fast-access buffer for real-time data handling adjacent to Flash code space |
| Supply Voltage | VDDF = VDDS = 1.65–2.2 V - allows direct integration with 1.8 V logic domains without level-shifting |
| Access Time | 85 ns random read (Flash), 35 ns page access - meets timing requirements for ARM9-based boot loaders |
| Program/Erase Endurance | 100,000 cycles per block - supports field firmware updates over full product lifecycle |
| Data Retention | 20 years at TA = 85°C - ensures long-term reliability in industrial temperature-grade applications |
| Package | LFBGA66 (ZA), 12 × 8 mm, 0.8 mm pitch - compact stacked die form factor for high-density embedded PCBs |
Pinout & Package
Package: Stacked LFBGA66 (ZA), 12 × 8 mm body, 8 × 8 ball array, 0.8 mm pitch, bottom view per Figure 3 of ST document AN2111.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Shared Address Inputs | Common address bus for both Flash and SRAM; A18–A20 used only by Flash |
| DQ0–DQ15 | Bi-directional Data Bus | 16-bit multiplexed I/O for read/write; supports word-level programming and byte-enables (UBS/LBS) |
| EF / ES | Flash/SRAM Chip Enable | Independent activation control - enables true concurrent access when asserted selectively |
| WF / WS | Flash/SRAM Write Enable | Separate write strobes allow overlapping Flash program and SRAM write sequences |
| GF / GS | Flash/SRAM Output Enable | Isolates output drivers per memory type; prevents bus contention during mixed access |
| WPF | Flash Block Write Protect | Hardware lock-down input - secures boot blocks against accidental erase or overwrite |
| RPF | Flash Reset/Power-Down | Active-low entry into standby mode; reduces Flash current to ≤ 5 µA |
| VDDF / VDDS | Flash/SRAM Core Supply | Independent 1.65–2.2 V supplies - permits independent power gating of memory sections |
| VPPF | Flash Programming Voltage | 11.4–12.6 V optional supply - enables fast program/erase (10 µs/word) without internal charge pump |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Bank Concurrent Operation | Read from one Flash bank while programming/erasing the other - eliminates wait states during firmware updates |
| CFI Compliance | 64-bit unique device ID and OTP cells - enables automated flash detection and configuration in bootloader software |
| Block Locking Flexibility | All blocks locked at power-up; any combination unlockable via command sequence - enforces secure boot partitioning |
| Erase Suspend/Resume | Pause erase to service high-priority read requests - maintains deterministic latency in real-time systems |
| Low-Voltage Data Retention | SRAM retains data at VDDS = 1.0 V - extends battery life in always-on monitoring nodes |
Applications
| Telecom Baseband Processing | Industrial PLC Firmware Storage |
|---|---|
|
Use Scenario: Boot loader loads application firmware from Flash into DSP RAM while storing runtime logs in integrated SRAM. IC Role / Device Role / Timing Role: Single-package memory subsystem providing non-volatile code storage and volatile working memory with shared bus timing alignment. Use Value: Eliminates inter-chip trace routing and timing skew between Flash and SRAM, reducing PCB layer count and EMI susceptibility. |
Use Scenario: Programmable logic controller stores ladder logic in Flash and buffers I/O state snapshots in SRAM during cyclic scan execution. IC Role / Device Role / Timing Role: Dual-bank Flash enables background firmware validation while SRAM holds real-time process variables with sub-100 ns access. Use Value: Prevents scan cycle interruption during field firmware upgrades, meeting IEC 61131-3 determinism requirements. |
| Medical Diagnostic Imaging Boot | Automotive Infotainment Head Unit |
|
Use Scenario: MRI subsystem boots diagnostic kernel from Flash and caches image processing parameters in SRAM before sensor acquisition. IC Role / Device Role / Timing Role: CFI-identified Flash ensures correct initialization sequence; SRAM provides zero-wait-state parameter lookup table access. Use Value: Reduces boot time by 22% versus discrete Flash+SRAM due to eliminated bus arbitration overhead. |
Use Scenario: Infotainment head unit stores navigation map tiles in Flash and buffers audio decode buffers in SRAM during Bluetooth streaming. IC Role / Device Role / Timing Role: WPF-protected Flash boot sector prevents corruption during over-the-air updates; SRAM supports burst audio DMA transfers. Use Value: Enables seamless firmware patching without audio dropout, satisfying ISO 26262 ASIL-B functional safety constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar multiple memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL256P11TFIV10 | 256 Mbit single-die NOR Flash only, no integrated SRAM - requires external SRAM for equivalent functionality | Higher Flash density but adds board area, BOM cost, and timing complexity for dual-memory coordination | Select when >32 Mbit Flash capacity is required and PCB layout allows discrete memory placement |
| AS7C34096B-12JIN | 4 Mbit standalone SRAM only - lacks Flash component entirely | Cannot replace boot code storage function; must be paired with separate Flash IC and managed via external controller | Choose only if existing design already uses discrete Flash and requires SRAM upgrade with identical timing and voltage |
Compared with S29GL256P11TFIV10 and AS7C34096B-12JIN, M36DR432AD10ZA6T delivers verified co-timing between Flash and SRAM on a single die, eliminating inter-device setup/hold violations and reducing total memory subsystem footprint by 47%.
Availability
M36DR432AD10ZA6T is available at Aetrix Electronics and suitable for telecom baseband processing, industrial PLC firmware storage, medical diagnostic imaging boot, and automotive infotainment head units requiring stable component supply across extended product lifecycles.
Supply support for M36DR432AD10ZA6T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader specializing in microcontrollers, memories, and analog/mixed-signal ICs for industrial, automotive, and consumer applications.
M36DR432AD10ZA6T belongs to ST's Multiple Memory Product line, designed specifically to consolidate boot Flash and working SRAM into one package for space- and power-constrained embedded systems.
FAQ
What is the purpose of the VPPF pin, and is it mandatory?
VPPF (11.4–12.6 V) is an optional programming voltage input that enables fast word programming (10 µs typical) and accelerated erase cycles. It is not mandatory: internal charge pump operation is supported at standard VDDF, though with longer program/erase times (e.g., 200 µs/word). Systems with tight firmware update windows benefit from external VPPF.
How does dual-bank operation prevent read/write conflicts?
Dual-bank operation isolates Flash memory into two physically independent arrays (4 Mbit + 28 Mbit). When one bank is executing a program or erase command, the other remains fully accessible for read operations with no latency penalty. This is enforced by hardware arbitration - no software intervention or wait states are required.
Can the SRAM and Flash share the same chip enable signal?
No. EF (Flash CE) and ES/E1S/E2S (SRAM CE) are electrically separate inputs. Driving them together causes undefined behavior: Flash commands may inadvertently trigger SRAM writes or vice versa. The logic diagram (Figure 2) and signal descriptions confirm independent control is required for reliable operation.
What happens to SRAM data during Flash programming?
SRAM data remains fully intact and accessible during Flash programming. The two memory sections operate on independent power domains (VDDS/VDDF) and control paths. SRAM read/write cycles continue uninterrupted - verified by Table 2 (Main Operation Modes) and functional block diagram (Figure 4) showing isolated control logic.
M36DR432AD10ZA6T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 66-LFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 100 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 66-LFBGA (12x8)
M36DR432AD10ZA6T FAQ
1.How can I place an order for M36DR432AD10ZA6T through Aetrix?
Please submit a Request for Quotation (RFQ) for M36DR432AD10ZA6T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M36DR432AD10ZA6T reliable?
The price and inventory of M36DR432AD10ZA6T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M36DR432AD10ZA6T is usually 5 days.
3.What payment methods are accepted for M36DR432AD10ZA6T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M36DR432AD10ZA6T transactions.
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4.How is shipping managed for M36DR432AD10ZA6T?
M36DR432AD10ZA6T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M36DR432AD10ZA6T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M36DR432AD10ZA6T?
For technical support, including M36DR432AD10ZA6T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M36DR432AD10ZA6T requirements.
6.How does Aetrix verify that M36DR432AD10ZA6T is sourced from the original manufacturer or authorized distributors?
All M36DR432AD10ZA6T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M36DR432AD10ZA6T meets industry standards.
7.What is the process for return or replacement of M36DR432AD10ZA6T?
All M36DR432AD10ZA6T units undergo pre-shipment inspection (PSI). If there is an issue with M36DR432AD10ZA6T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M36DR432AD10ZA6T part is unused and in its original packaging.
Return procedure for M36DR432AD10ZA6T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M36DR432AD10ZA6T Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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