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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Supervisors

STMicroelectronics M40Z111MH6E

Name: M40Z111MH6E
Brand: STMicroelectronics
SKU: M40Z111MH6E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M40Z111MH6E

Manufacturer:: STMicroelectronics

Category:: Supervisors

Package:: 28-SOIC (0.350", 8.89mm Width) with SNAPHAT Sockets

Datasheet:: M40Z111MH6E.pdf

Description:: IC SUPERVISOR 1 CHANNEL 28SOH

Quantity:: RFQ Add To RFQ list

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Product details

Overview

M40Z111MH6E from STMicroelectronics is a 5V non-volatile RAM (NVRAM) supervisor IC that converts standard low-power SRAMs into battery-backed NVRAMs. It provides precision power monitoring, automatic write-protection during VCC out-of-tolerance conditions, and seamless switchover to internal lithium battery backup via SNAPHAT® housing. Key confirmed parameters: VCC = 4.5–5.5V, VPFD = 4.2–4.75V (selectable via THS pin), tEDL ≤ 15ns, ICC = 3–6mA (active), ICCDR = 150nA (data retention). Used in industrial data loggers requiring persistent memory during mains failure.

For engineers reviewing the M40Z111MH6E datasheet, M40Z111MH6E pinout, M40Z111MH6E application, or M40Z111MH6E equivalent, this page delivers verified technical context, SOH28 package mapping, real-world SRAM interfacing constraints, battery switchover timing (VSO, VOHB), and validated alternatives for legacy NVRAM supervision in embedded control systems.

Technical Context

The M40Z111MH6E integrates a precision voltage reference and comparator to monitor VCC against programmable power-fail thresholds (VPFD = 4.2–4.75V), with threshold selection via THS pin tied to VSS or VOUT. Its internal analog switch disconnects VCC from VOUT and connects the SNAPHAT® battery at VSO (≈ VPFD – 100mV), delivering VOHB = 2.0–3.6V to sustain SRAM data retention.

During power-down, ECON forces SRAM write-protection within tWPT (40–150µs) after VCC crosses VPFD(min); recovery holds ECON inactive for tER (40–200ms) post-VCC restoration to ensure processor stabilization. Chip enable propagation delay is asymmetric: tEDL = 15ns (low-to-high), tEDH = 10ns (high-to-low), enabling precise SRAM access timing coordination.

Key Specifications

Parameter	Value and Actual Design Meaning
VCC Range	4.5V to 5.5V - defines compatible SRAM supply rails and system power domain
VPFD Threshold	4.2–4.75V (THS-selectable) - sets precise voltage level at which SRAM write-protection activates
tEDL Propagation	≤15ns - ensures minimal delay between E input assertion and ECON output activation for fast SRAM access
ICCDR	150nA - total current draw during battery backup, directly limiting data retention lifetime with SRAM I_RET
VSO Switchover	VPFD – 100mV - triggers battery接管 before SRAM VCC dropout violates data retention spec
VOHB Output	2.0–3.6V - maintains SRAM-compatible voltage during battery mode, independent of degraded VCC
IOUT2 Backup	100µA - maximum sustained current from battery to VOUT, constraining supported SRAM count and size

Pinout & Package

Package: SOH28 - 28-lead plastic small outline (330mil width), RoHS-compliant ECOPACK®, lead-free finish, designed for direct mating with 4-pin SNAPHAT® battery housing (e.g., M4Z28-BR00SH1).

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,4,22,23,24,25,26,27,28	NC	No internal connection - must be left unconnected per design; no pull-up/down required
5,21	VCC	Main supply input - powers internal circuitry and feeds VOUT via low-dropout switch (V_drop < 0.3V)
6,20	NC	No internal connection - floating pins; avoid routing signals nearby to prevent coupling
7,19	VCC	Redundant VCC pins - improve power delivery integrity and reduce IR drop across package
8,18	NC	No internal connection - electrically isolated; no impact on functionality
9,17	NC	No internal connection - unused; PCB layout may omit traces
10,16	NC	No internal connection - reserved; no function or test access
11	E	Chip enable input - controls SRAM access; ECON mirrors E during valid VCC, overrides during fault
12	THS	Threshold select - logic level (VSS or VOUT) selects VPFD range (4.2–4.5V or 4.5–4.75V)
13	VSS	Ground reference - common return for all internal circuits and external SRAM interface
14	ECON	Conditioned chip enable - active-low output driving SRAM CE; forced inactive during VCC fault
15	VOUT	SRAM supply output - sourced from VCC (normal) or SNAPHAT® battery (backup); powers SRAM VCC pin

Key Features

Feature	Design Value
SNAPHAT®-enabled battery integration	SOH28 package includes gold-plated sockets for post-reflow mounting of 4-pin SNAPHAT® housing - prevents thermal damage to Li battery during SMT
Programmable power-fail detection	Two VPFD ranges selectable via THS pin (VSS/VOUT) - enables optimization for different SRAM VCC tolerance bands
Asymmetric CE timing control	tEDL = 15ns / tEDH = 10ns - preserves SRAM access window integrity during rapid power transitions
Guaranteed write-protection hold time	tER = 40–200ms after VCC recovery - ensures microcontroller reset completion before SRAM re-enables
Low data retention current	ICCDR = 150nA - minimizes battery drain, extending retention life when paired with low-I_RET SRAMs

Applications

Industrial Data Logger

Medical Device Memory Backup

Use Scenario: Continuous acquisition of sensor readings in remote field equipment with intermittent AC power.

IC Role / Device Role / Timing Role: NVRAM supervisor providing autonomous SRAM write-protection and battery switchover during grid outage.

Use Value: Ensures zero data loss during brownouts by activating ECON within 150µs of VCC crossing VPFD, sustaining memory with VOHB ≥ 2.0V until power returns.

Use Scenario: Patient vital sign recorder requiring FDA-compliant data persistence during battery swap or charging interruption.

IC Role / Device Role / Timing Role: Fault-tolerant memory controller enforcing strict write-disable on VCC anomaly per IEC 62304 safety requirements.

Use Value: Guarantees SRAM write-protection before VCC falls below 4.2V (THS=VOUT), with tER ≥ 40ms ensuring MCU firmware validation before memory re-enable.

Avionics Black Box Recorder

Energy Meter Firmware Storage

Use Scenario: Crash-protected flight parameter storage where memory integrity must survive extreme voltage transients.

IC Role / Device Role / Timing Role: Precision voltage monitor rejecting false triggers from <10µs VCC undershoots (tFB = 10µs immunity).

Use Value: Prevents spurious write-protection during engine ignition spikes by requiring VCC fall time >10µs to VPFD(min), preserving operational continuity.

Use Scenario: Smart electricity meter retaining tariff tables and consumption history across utility grid interruptions.

IC Role / Device Role / Timing Role: Dual-SRAM supervisor managing separate x8/x16 memory banks with shared VOUT and independent ECON control.

Use Value: Supports up to two LP-SRAMs (E2 tied to VOUT) with coordinated backup, reducing BOM count while maintaining 10-year data retention via 120mAh SNAPHAT®.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NVRAM supervisor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MAX6900APL+	Single-supply 3.3V operation only; no THS-selectable VPFD; fixed V_PFD = 2.93V	Lacks dual-SRAM support and programmable threshold; requires external diode for VCC transient protection	Choose only for 3.3V-only designs where VPFD flexibility and dual-SRAM control are unnecessary
DS1230Y-150+T&R	Integrated lithium battery (no SNAPHAT®); 150ns access time; no ECON timing control (static CE override)	Higher power consumption (ICCDR ≈ 1µA); no tER hold time; incompatible with modern RoHS assembly	Select only for legacy repair or where integrated battery simplifies layout despite 7× higher retention current

Compared with MAX6900APL+ and DS1230Y-150+T&R, the M40Z111MH6E uniquely supports 5V systems with user-selectable VPFD thresholds, dual-SRAM coordination, and guaranteed tER hold time-making it the only option for new industrial designs requiring configurable, standards-compliant NVRAM supervision with post-reflow battery integration.

Availability

M40Z111MH6E is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, avionics black box recorders, and smart energy meters requiring stable component supply across extended product lifecycles.

Supply support for M40Z111MH6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets.

The M40Z111MH6E belongs to ST's legacy NVRAM supervisor product line, engineered specifically for converting standard LP-SRAMs into robust, battery-backed non-volatile memory subsystems in harsh industrial environments.

FAQ

What is the required external SNAPHAT® battery part number for M40Z111MH6E?

The M40Z111MH6E requires a separate 4-pin SNAPHAT® battery housing ordered as M4Z28-BR00SH1 (48mAh) or M4Z32-BR00SH1 (120mAh). These are not included with the SOH28 IC and must be mounted post-reflow. The SNAPHAT® part number is specified in Table 11 of the datasheet and is keyed to prevent reverse insertion.

Can M40Z111MH6E supervise more than one SRAM simultaneously?

Yes, the M40Z111MH6E is explicitly designed to control up to two low-power SRAMs. The ECON output drives the primary SRAM's CE pin, while the secondary SRAM's E2 pin must be tied to VOUT. Both SRAMs must be configured so CE/E2 disables all other inputs-verified in Figure 3 and Section 2 of the datasheet.

How does THS pin configuration affect VPFD voltage selection?

When THS is connected to VSS, VPFD is set to 4.5–4.75V; when THS is connected to VOUT, VPFD shifts to 4.2–4.5V. This dual-threshold capability allows matching the supervisor to specific SRAM VCC tolerance bands. The THS pin must be hard-wired-not floated-as stated in Section 2 and Table 6.

Is a Schottky diode mandatory for M40Z111MH6E operation?

A Schottky diode (e.g., 1N5817) from VCC to VSS is strongly recommended per Section 2.2 to suppress negative-going transients during power cycling. Without it, VCC undershoots below –0.3V in battery-backup mode risk SRAM data corruption-a documented reliability requirement, not optional guidance.

M40Z111MH6E Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 28-SOIC (0.350", 8.89mm Width) with SNAPHAT Sockets

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Type:: Simple Reset/Power-On Reset

Number of Voltages Monitored:: 1

Voltage - Threshold:: 4.35V

Output:: -

Reset:: -

Reset Timeout:: -

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 28-SOH

M40Z111MH6E FAQ

1.How can I place an order for M40Z111MH6E through Aetrix?

Please submit a Request for Quotation (RFQ) for M40Z111MH6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M40Z111MH6E reliable?

The price and inventory of M40Z111MH6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M40Z111MH6E is usually 5 days.

3.What payment methods are accepted for M40Z111MH6E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M40Z111MH6E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M40Z111MH6E?

M40Z111MH6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M40Z111MH6E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M40Z111MH6E?

For technical support, including M40Z111MH6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M40Z111MH6E requirements.

6.How does Aetrix verify that M40Z111MH6E is sourced from the original manufacturer or authorized distributors?

All M40Z111MH6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M40Z111MH6E meets industry standards.

7.What is the process for return or replacement of M40Z111MH6E?

All M40Z111MH6E units undergo pre-shipment inspection (PSI). If there is an issue with M40Z111MH6E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M40Z111MH6E part is unused and in its original packaging.

Return procedure for M40Z111MH6E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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