STMicroelectronics M48T58Y-70MH1E
- Part No.:
- M48T58Y-70MH1E
- Manufacturer:
- STMicroelectronics
- Category:
- Real Time Clocks
- Package:
- 28-SOIC (0.337", 8.56mm Width) with SNAPHAT Sockets
- Datasheet:
-
M48T58Y-70MH1E.pdf
- Description:
- IC RTC CLK/CALENDAR PAR 28SOH
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
M48T58Y-70MH1E from STMicroelectronics is a 64 Kbit (8 Kb × 8) non-volatile TIMEKEEPER® SRAM integrating ultra-low-power static RAM, real-time clock, power-fail control circuitry, and on-board lithium battery and crystal in a CAPHAT™ DIP package. It delivers BCD-coded timekeeping (year/month/day/hour/minute/second), automatic leap-year correction, frequency test output (FT), and VPFD-triggered write protection at 4.2–4.5 V. Used in industrial control panels and legacy embedded systems requiring persistent time-stamped data logging without external backup components.
For engineers reviewing the M48T58Y-70MH1E datasheet, M48T58Y-70MH1E pinout, M48T58Y-70MH1E application, or M48T58Y-70MH1E equivalent, this device serves as a JEDEC-standard 8 Kb × 8 SRAM drop-in replacement with integrated RTC functionality-critical for systems needing guaranteed data retention during brownouts, accurate timestamping, and minimal board space for timekeeping + memory.
Technical Context
The M48T58Y-70MH1E integrates a 32.768 kHz quartz oscillator, BiPORT™ dual-port RAM array (8184 × 8), voltage-sense switching circuitry, and lithium cell within a single monolithic die. Its clock registers (1FF8h–1FFFh) reside in upper SRAM addresses and are updated once per second by dedicated clock logic-not accessed directly from oscillator counters.
Power management is hardware-automated: when VCC drops below VPFD (4.2–4.5 V), the device enters write-protected standby; below VSO (~4.0 V), it seamlessly switches to battery power, sustaining RTC and SRAM operation for ≥7 years. The STOP bit (MSB of seconds register) halts oscillator operation to conserve battery during shelf storage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 64 Kbit (8 Kb × 8); provides byte-wide parallel access identical to JEDEC-standard SRAMs. |
| RTC resolution | 1-second update interval with BCD-coded year/month/day/hour/minute/second; includes automatic 28/29/30/31-day month correction. |
| VPFD range | 4.2 V ≤ VPFD ≤ 4.5 V; triggers automatic write protection and high-Z I/O before VCC collapse compromises data integrity. |
| Access time | 70 ns READ/WRITE cycle time; ensures compatibility with legacy 5 V microcontrollers and bus controllers. |
| Battery life | ≥7 years in data retention mode (VCC < VSO); enabled by integrated 48 mAh lithium button cell in CAPHAT™ package. |
| Oscillator accuracy | ≤35 ppm error at 25°C; supports reliable long-term timestamping without external calibration. |
| Operating temp | 0 °C to +70 °C ambient; validated for industrial control and instrumentation environments. |
Pinout & Package
Package: 28-pin plastic DIP (PCDIP28) with integrated CAPHAT™ housing containing lithium battery and 32.768 kHz crystal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address inputs | 13-bit address bus for accessing 8,192 bytes; compatible with standard 8 Kb × 8 SRAM addressing. |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; supports BYTEWIDE™ read/write operations identical to conventional SRAM. |
| E1, E2 | Chip enables | Active-low (E1) and active-high (E2) dual CE scheme; enables JEDEC-compliant timing and eliminates bus contention. |
| G | Output enable | Controls three-state output drivers; high during WRITE to prevent bus conflict, low during READ to drive DQ lines. |
| W | Write enable | Active-low signal initiating WRITE cycles; synchronized with E1/E2 to define valid write windows per AC specs. |
| FT | Frequency test output | Open-drain 32.768 kHz square wave; used for oscillator validation and system-level timing diagnostics. |
| VCC, VSS | Power supply | Single 5 V supply (4.5–5.5 V); internal voltage sensing triggers battery switchover and write protection autonomously. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated CAPHAT™ package | Self-contained 28-pin DIP with battery and crystal-eliminates external components and PCB layout complexity for RTC+RAM functions. |
| BYTEWIDE™ clock access | Time registers mapped to SRAM addresses 1FF8h–1FFFh; readable/writable using standard memory instructions-no custom protocol required. |
| Automatic power-fail response | Hardware-triggered write protection and battery switchover occur without firmware intervention-ensures data safety during uncontrolled power loss. |
| Century bit support | CEB/CB bits enable correct 2000/2100 rollover handling; avoids Y2K-style date corruption in long-lifecycle industrial deployments. |
| STOP bit oscillator control | MSB of seconds register halts 32.768 kHz oscillator to extend shelf-life battery usage-critical for pre-deployed spares and inventory stock. |
Applications
| Industrial HMI Panels | Legacy PLC Data Loggers |
|---|---|
|
Use Scenario: Human-machine interface panels in factory automation require persistent timestamping of operator actions and alarm events across power cycles. IC Role / Device Role / Timing Role: M48T58Y-70MH1E acts as non-volatile memory + real-time clock-storing event logs with precise BCD timestamps while retaining data during main power outages. Use Value: Eliminates need for separate RTC IC and backup capacitor/SRAM, reducing BOM count and failure points in space-constrained panel designs. |
Use Scenario: Programmable logic controllers log sensor readings and fault codes over weeks or months, requiring reliable time stamps even during extended brownouts. IC Role / Device Role / Timing Role: Provides battery-backed SRAM storage and autonomous clock operation-maintaining accurate time and data integrity without host CPU supervision. Use Value: Guarantees ≥7-year data retention on battery alone, enabling maintenance-free operation in remote or inaccessible installations. |
| Medical Device Event Recorders | Energy Meter Firmware Storage |
|
Use Scenario: Portable diagnostic equipment records patient vital sign measurements with ISO-compliant timestamps for audit trails and regulatory reporting. IC Role / Device Role / Timing Role: Serves as secure, tamper-resistant time source and memory buffer-BCD time format simplifies firmware parsing and reduces CPU overhead. Use Value: Built-in leap-year correction and century bit ensure calendar accuracy through 2100, satisfying FDA 21 CFR Part 11 timestamp requirements. |
Use Scenario: Smart electricity meters store firmware configuration and tariff schedules that must persist across grid failures and seasonal temperature swings. IC Role / Device Role / Timing Role: Functions as JEDEC-compatible SRAM with integrated RTC-enabling time-of-use billing logic and firmware version tracking without external timing components. Use Value: 35 ppm oscillator stability over 0–70°C ensures billing accuracy across environmental conditions, meeting IEC 62053-21 Class 0.5S requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile RTC+SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS12887A-150+ (Maxim Integrated) | 5 V, 128 Kbit (16 Kb × 8), integrated lithium battery and crystal; 150 ns access time; no STOP bit or century bit. | Higher memory density but slower timing; lacks oscillator halt and 2100 rollover support-requires external firmware workarounds. | Select if larger memory footprint is needed and legacy 150 ns timing is acceptable; avoid where long-term calendar correctness is critical. |
| M48T35Y-70MH1E (STMicroelectronics) | 32 Kbit (4 Kb × 8), same CAPHAT™ DIP package and RTC architecture; 70 ns access time; identical VPFD (4.2–4.5 V) and battery life. | Half the memory capacity; pin-compatible but requires address decoding adjustment for 8 Kb systems. | Choose only for cost-sensitive designs where 4 Kb SRAM suffices and board layout rework is feasible. |
Compared with DS12887A-150+, M48T58Y-70MH1E offers faster 70 ns access and built-in century/leap-year handling; versus M48T35Y-70MH1E, it doubles memory capacity while maintaining identical power-fail behavior and package compatibility-making it optimal for upgrade paths in existing 8 Kb socket designs.
Availability
M48T58Y-70MH1E is available at Aetrix Electronics and suitable for industrial HMI panels, legacy PLC data loggers, medical event recorders, and energy meter firmware storage requiring stable component supply across multi-year production cycles.
Supply support for M48T58Y-70MH1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with broad analog, MCU, and memory portfolios.
M48T58Y-70MH1E belongs to ST's TIMEKEEPER® family-designed specifically for embedded systems needing integrated, battery-backed real-time clock and SRAM in JEDEC-compatible packages to simplify design and reduce bill-of-materials.
FAQ
What is the function of the FT pin on M48T58Y-70MH1E?
The FT (Frequency Test) pin is an open-drain output delivering a 32.768 kHz square wave synchronized to the internal crystal oscillator. It enables system-level validation of oscillator startup, frequency stability, and timing integrity without requiring external test equipment-critical for production line functional testing and field diagnostics.
How does the M48T58Y-70MH1E handle leap years and century rollover?
The device automatically corrects for 28-, 29- (leap year), 30-, and 31-day months using internal logic. Century rollover is managed via the Century Enable Bit (CEB) and Century Bit (CB) in the control register (1FF8h); when CEB=1, CB toggles at 2000/2100 boundaries, ensuring accurate date calculation through year 2100 without firmware intervention.
Can the M48T58Y-70MH1E be used in surface-mount designs?
No-the M48T58Y-70MH1E uses a through-hole PCDIP28 CAPHAT™ package with integrated battery and crystal. For surface-mount applications, ST offers the SOH28 SOIC variant (e.g., M48T58Y-70MH6E), which requires a separate SNAPHAT® housing (M4T28-BR12SH) mounted post-reflow to protect the battery from thermal damage.
What happens during a power failure while writing to the SRAM portion?
If VCC drops into the VPFD window (4.2–4.5 V) mid-write, the device immediately enters write-protected mode-halting further writes and placing all I/O in high-impedance state. Only the currently addressed byte may be corrupted; the rest of the 8 Kb memory remains intact and recoverable upon power restoration.
M48T58Y-70MH1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- Timekeeper®
- Package/Case:
- 28-SOIC (0.337", 8.56mm Width) with SNAPHAT Sockets
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Type:
- Clock/Calendar
- Features:
- Leap Year
- Memory Size:
- -
- Time Format:
- HH:MM:SS (24 hr)
- Date Format:
- YY-MM-DD-dd
- Interface:
- Parallel
- Voltage - Supply:
- 4.5V ~ 5.5V
- Voltage - Supply, Battery:
- -
- Current - Timekeeping (Max):
- 3mA @ 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C
- Mounting Type:
- Surface Mount
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- 28-SOH
M48T58Y-70MH1E FAQ
1.How can I place an order for M48T58Y-70MH1E through Aetrix?
Please submit a Request for Quotation (RFQ) for M48T58Y-70MH1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M48T58Y-70MH1E reliable?
The price and inventory of M48T58Y-70MH1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M48T58Y-70MH1E is usually 5 days.
3.What payment methods are accepted for M48T58Y-70MH1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M48T58Y-70MH1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M48T58Y-70MH1E?
M48T58Y-70MH1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M48T58Y-70MH1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M48T58Y-70MH1E?
For technical support, including M48T58Y-70MH1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M48T58Y-70MH1E requirements.
6.How does Aetrix verify that M48T58Y-70MH1E is sourced from the original manufacturer or authorized distributors?
All M48T58Y-70MH1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M48T58Y-70MH1E meets industry standards.
7.What is the process for return or replacement of M48T58Y-70MH1E?
All M48T58Y-70MH1E units undergo pre-shipment inspection (PSI). If there is an issue with M48T58Y-70MH1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M48T58Y-70MH1E part is unused and in its original packaging.
Return procedure for M48T58Y-70MH1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M48T58Y-70MH1E Tags

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MCP7940N-I/SN
Microchip Technology

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MCP7940MT-I/MNY
Microchip Technology

-
PCF85063ATL/1,118
NXP USA Inc.

-
MCP7940NT-I/SN
Microchip Technology

-
MCP7940NT-I/MS
Microchip Technology

-
MCP7940N-I/MS
Microchip Technology

-
PCF85063AT/AY
NXP USA Inc.
-
PCF85063TP/1Z
NXP Semiconductors

-
PCF85063ATT/AJ
NXP USA Inc.

-
MCP7940NT-E/SN
Microchip Technology

-
MCP7940NT-I/MNY
Microchip Technology

-
MCP79400T-I/SN
Microchip Technology
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